Search Results (12)

In this study, we fabricated a nanostructure on the surface of the micro-lens array (MLA), which is one of the light extraction technologies of organic light-emitting diodes (OLEDs), by performing the Reactive Ion -Etching (RIE) process. The MLA consists of a lensed area and a lens-less bottom (flat film area). We performed a systematic analysis to find ways to improve the light extraction efficiency of the MLA surface and flat film area. By controlling the RIE process time and type of gas plasma, nanostructures were formed on the surface of the MLA. O₂ and CF₄ gas plasmas resulted in nanostructures with tall heights and high aspect ratios, whereas CHF₃ and Ar gas plasmas resulted in nanostructures with small heights and low aspect ratios. Furthermore, it was found that the nanostructures were not covered over the entire area, and the extent to which the nanostructures were distributed varied depending on the process time. As the RIE process time increases, the nanostructure expands from the top surface of the MLA to the flat film area. This limited the light extraction efficiency improvement. At a short process time of 50 s, nanostructures were formed only on the upper surface of the MLA hemisphere, which increased the light extraction efficiency. However, at long process times over 50 s, the surface of the hemisphere of MLA was covered with vertically aligned nanostructures, which decreased the efficiency. While the flat film area was covered with nanostructures at the longest process time of ~3200 s, it was effective, but the total efficiency was further decreased by the trade-off between them. As a result, the high-aspect-ratio nanostructured MLA patterned only on the top surface of the hemispherical MLA with a 50 s O₂ plasma treatment showed the highest efficiency, which was slightly higher than that of the bare MLA. We expect that if the nanostructures can be formed in a direction perpendicular to the MLA surface and the flat film area simultaneously, the light extraction efficiency would be further improved. Full article

Two-dimensional (2D) organic−inorganic hybrid perovskites (OIHPs) have emerged as promising candidates for next-generation optoelectronic applications. While vertical heterostructures of 2D OIHPs have been explored through mechanical stacking, the controlled fabrication of lateral heterostructures remains a significant challenge. Here, we present a lithography-free, van der Waals mask-assisted strategy for the deterministic fabrication of 2D OIHP lateral heterostructures. Mechanically exfoliated 2D materials such as graphene serve as removable masks that enable selective conversion of unmasked perovskite regions via ion exchange reaction. This technique enables the fabrication of various lateral heterostructures, such as BA₂MA₂Pb₃I₁₀/MAPbI₃, PEAPbI₄/MAPbI₃, as well as BA₂MAPb₂I₇/MAPbBr₃. Furthermore, complex multiheterostructures and superlattices can be constructed through sequential masking and conversion processes. Moreover, to investigate the electronic properties and demonstrate potential device applications of the lateral heterostructures, we have fabricated an electrical diode based on a BA₂MA₂Pb₃I₁₀/MAPbI₃ lateral heterostructure. Stable electrical rectifying behavior with a rectification ratio of around 10 was observed. This general and flexible approach provides a robust platform for constructing 2D OIHPs lateral heterostructures and opens new pathways for their integration into high-performance optoelectronic devices. Full article

The enhancement of organic light-emitting diode (OLED) device performance has been a key area of research in organic optoelectronic devices. Optimizing carrier mobility within OLED devices is a crucial strategy. In this study, the hole transport layer was optimized using a self-assembled monolayer (SAM) subjected to different annealing temperatures. Through submitting the SAM to an annealing temperature of 100 °C, a maximum luminous intensity of 32,290 cd/m² and a maximum EQE of 1.77 were achieved, the latter being more than two-fold higher than that without the SAM. As the SAM annealing temperature increased from 80 °C to 120 °C, both the vertical orientation of molecules in the hole transport layer and the hole mobility in hole-only devices (HODs) improved. This vertical orientation is beneficial to enhancing hole mobility. Electrochemical impedance spectroscopy and surface morphology analysis revealed that the introduction of a SAM leads to the formation of interface resistance. The synergy effect between the variation in the molecular transition dipole moment and the interface morphology of the hole transport layer optimizes the hole mobility of HODs and leads to the enhancement of OLED performance. Full article

Extended π-conjugation with backbone-planarity-driven π-π stacking dominates charge transport in semiconducting polymers (SCPs). The roles of SCP film morphology and macromolecular conformation concerning the substrate in influencing charge transport and its impact on device performance have been a subject of extensive debate. Face-on SCPs promote out-of-plane charge transport primarily through π-π stacking, with conjugated polymeric chains assisting transport in connecting crystalline domains, whereas edge-on SCPs promote in-plane charge transport primarily through conjugation and π-π stacking. In this work, we fabricated three different types of devices, namely, organic field effect transistors, organic Schottky diodes, and organic bistable memristors, as representatives of planar and vertical devices. We demonstrate that a planar device, i.e., an organic field effect transistor, performs well in an edge-on conformation exhibiting a field-effect mobility of 0.12 cm²V⁻¹s⁻¹ and on/off ratio >10⁴, whereas vertical devices, i.e., organic Schottky diodes and organic memristors, perform well in a face-on conformation, exhibiting exceptionally high on/off ratios of ~10⁷ and 10⁶, respectively. Full article

Vertical light-emitting transistors (VLETs) consisting of vertically stacked unipolar transistors and organic light-emitting diodes (OLEDs) have been proposed as a prospective building block for display technologies. In addition to OLEDs, quantum-dot (QD) LEDs (QLEDs) with high brightness and high color purity have also become attractive light-emitting devices for display applications. However, few studies have attempted to integrate QLEDs into VLETs, as this not only involves technical issues such as compatible solution process of QDs and fine patterning of electrodes in multilayer stacked geometries but also requires a high driving current that is demanding on transistor design. Here we show that these integration issues of QLEDs can be addressed by using inorganic transistors with robust processability and high mobility, such as the studied ZnO transistor, which facilitates simple fabrication of QD VLETs (QVLETs) with efficient emission in the patterned channel area, suitable for high-resolution display applications. We perform a detailed optimization of QVLET by modifying ZnO:polyethylenimine nanocomposite as the electron injection layer (EIL) between the integrated ZnO transistor/QLED, and achieve the highest external quantum efficiency of ~3% and uniform emission in the patterned transistor channel. Furthermore, combined with a systematic study of corresponding QLEDs, electron-only diodes, and electroluminescence images, we provide a deeper understanding of the effect of EIL modification on current balance and distribution, and thus on QVLET performance. Full article

Multi-color light-emitting diodes (LEDs) with various advantages of color tunability, self-luminescence, wide viewing angles, high color contrast, low power consumption, and flexibility provide a wide range of applications including full-color display, augmented reality/virtual reality technology, and wearable healthcare systems. In this review, we introduce three main types of multi-color LEDs: the organic LED, colloidal quantum dots (CQDs) LED, and CQD–organic hybrid LED. Various strategies for realizing multi-color LEDs are discussed including red, green, and blue sub-pixel side-by-side arrangement; vertically stacked LED unit configuration; and stacked emitter layers in a single LED. Finally, according to their status and challenges, we present an outlook of multi-color devices. We hope this review can inspire researchers and make a contribution to the further improvement of multi-color LED technology. Full article

In this research work, the gas sensing properties of halogenated chloroaluminum phthalocyanine (ClAlPc) thin films were studied at room temperature. We fabricated an air-stable ClAlPc gas sensor based on a vertical organic diode (VOD) with a porous top electrode by the solution process method. The surface morphology of the solution-processed ClAlPc thin film was examined by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The proposed ClAlPc-based VOD sensor can detect ammonia (NH₃) gas at the ppb level (100~1000 ppb) at room temperature. Additionally, the ClAlPc sensor was highly selective towards NH₃ gas compared to other interfering gases (NO₂, ACE, NO, H₂S, and CO). In addition, the device lifetime was tested by storing the device at ambient conditions. The effect of relative humidity (RH) on the ClAlPc NH₃ gas sensor was also explored. The aim of this study is to extend these findings on halogenated phthalocyanine-based materials to practical electronic nose applications in the future. Full article

We theoretically model the near-field (NF) absorption for a multilayer micro-cavity (MMC) structure and investigate the contribution of the NF absorption to the dipole radiation power in top-emitting organic light-emitting diodes (OLEDs). The NF absorption occurs due to the interaction between an evanescent wave with a large in-plane wave vector and a planar metal layer in the vicinity of the dipole radiation. The analytical expressions of the NF absorption in the MMC structure are derived from the plane wave expansions of the electric field amplitude, which includes the two-beam and multi-beam interference terms. The transverse magnetic polarization light emitted by both horizontally and vertically oriented dipole emitters is considered in the NF absorption while the contribution of the transverse electric polarization light is neglected. Based on the total spectral power density calculated in a top-emitting OLED, the respective spectral response functions of surface plasmon (SP) modes and NF absorption are compared, where the summation of the Lorentzian line shape functions is used to represent spectral responses of SP modes. At large values of in-plane wave vectors, the spectral response caused by the NF absorption becomes significant and approaches the total spectral power density. In addition, the relative optical powers from various dipole dissipation mechanisms are calculated with respect to the dipole emitter position in the emission layer (EML), which shows the optical power coupled to the NF absorption is predominant over other mechanisms when the distance between the dipole emitter and the EML/Ag interface is less than 10 nm in the top-emitting OLED. Full article

The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO₂ substrate with the use of nanorods and graphene buffer layers by metal organic chemical vapor deposition (MOCVD). The effect of different growth parameters on the morphology and vertical-to-lateral aspect ratio of nanorods was discussed by analyzing growth kinetics. Furthermore, we tuned nanorod coalescence to obtain continuous GaN films with a blue-LED structure by adjusting growth conditions. The GaN films exhibited a hexagonal wurtzite structure and aligned c-axis orientation demonstrated by X-ray diffractometer (XRD), Raman, and transmission electron microscopy (TEM) results. Finally, five-pair InGaN/GaN multi-quantum-wells (MQWs) were grown. The photoluminescence (PL) showed an intense emission peak at 475 nm, and the current–voltage (I-V) curve shows a rectifying behavior with a turn-on voltage of 5.7 V. This work provides a promising fabrication method for the large-area and low-cost GaN-based devices on amorphous substrates and opens up the further possibility of nitride integration with Si (100) complementary metal oxide semiconductor (CMOS) electronics. Full article

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs. Full article

A novel organic optical sensor that integrates a front organic light-emitting diode (OLED) and an organic photodiode (OPD) is demonstrated. The stripe-shaped cathode is used in the OLED components to create light signals, while the space between the stripe-shaped cathodes serves as the detection window for integrated OPD units. A MoO₃ (5 nm)/Ag (15 nm) bi-layer inter-electrode is interposed between the vertically stacked OLED and OPD units, serving simultaneously as the cathode for the front OLED and an anode for the upper OPD units in the sensor. In the integrated sensor, the emission of the OLED units is confined by the area of the opaque stripe-shaped cathodes, optimized to maximize the reflected light passing through the window space for detection by the OPD components. This can ensure high OLED emission output, increasing the signal/noise ratio. The design and fabrication flexibility of an integrated OLED/OPD device also has low cost benefits, and is light weight and ultra-thin, making it possible for application in wearable units, finger print identification, image sensors, smart light sources, and compact information systems. Full article

In this study, we investigate the keys to obtain a sensitive ammonia sensor with high air stability by using a low-cost polythiophene diode with a vertical channel and a porous top electrode. Poly(3-hexylthiophene) (P3HT) and air-stable poly(5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene) (PQT-12) are both evaluated as the active sensing layer. Two-dimensional current simulation reveals that the proposed device exhibits numerous connected vertical nanometer junctions (VNJ). Due to the de-doping reaction between ammonia molecules and the bulk current flowing through the vertical channel, both PQT-12 and P3HT VNJ-diodes exhibit detection limits of 50-ppb ammonia. The P3HT VNJ-diode, however, becomes unstable after being stored in air for two days. On the contrary, the PQT-12 VNJ-diode keeps an almost unchanged response to 50-ppb ammonia after being stored in air for 25 days. The improved storage lifetime of an organic-semiconductor-based gas sensor in air is successfully demonstrated. Full article