Search Results (66)

The sol–gel synthesis of titanium dioxide (TiO₂) nanostructures is investigated in the present work in order to optimize synthesis parameters and enhance the optical properties and cost-effectiveness of the obtained materials. TiO₂ is widely used in photocatalysis, photovoltaics, and environmental applications due to its high stability, tunable band gap, and strong light absorption. The sol–gel method offers a scalable, cost-effective route for producing nanostructured TiO₂, although the precise control over particle morphology remains challenging. For this reason, in the present work, a statistical design of experiments (DOE) approach is employed to systematically refine reaction conditions through the manipulation of precursor concentrations, solvent ratios, and reaction volume. The experimental results obtained indicate that acetic acid is a key catalyst and stabilizing agent, significantly improving nucleation control and particle formation. Moreover, it is also shown that solvent dilution, particularly with acetic acid, leads to the formation of TiO₂ nanorods with enhanced optical properties. Additionally, scanning electron micrographs revealed that controlled synthesis conditions can reduce the particle size distribution and improve structural uniformity. Moreover, X-ray diffraction analyses confirmed the formation of a pure anatase crystalline phase, while ultraviolet–visible spectroscopy analyses indicated the existence of an optimal band gap for photocatalytic applications. Finally, the cost analysis showed that acetic acid-assisted synthesis can reduce production costs and simultaneously maintain high optical properties. Therefore, the present study highlights that proper manipulation and control of reaction conditions during sol–gel syntheses can allow the manufacture of high-performance TiO₂ nanomaterials for advanced technological applications, also providing a foundation for the development of cost-effective materials. Full article

The novel benzanthrone derivative, 2-bromo-3-aminobenzo[de]anthracene-7-one (2-Br-3-NH₂BA), was synthesized and extensively characterized to investigate its photophysical behavior in various solvents. It was prepared through selective bromination of 3-aminobenzanthrone using N-bromosuccinimide in dimethylformamide at −20 °C. Featuring a donor–π–acceptor (D–π–A) structure, 2-Br-3-NH₂BA exhibits pronounced solvatochromism due to the intramolecular charge transfer (ICT) between the amino donor and the carbonyl acceptor groups. Optical measurements conducted in eight solvents of varying polarity revealed a significant bathochromic shift in both absorption and fluorescence emission, with emission maxima red-shifting by over 110 nm from non-polar to polar environments. Corresponding reductions in the optical band gap energies, as calculated from Tauc plots, further support solvent-induced electronic state modulation. Additionally, quantum yield analysis showed higher fluorescence efficiency in non-polar solvents, while polar solvents induced twisted intramolecular charge transfer (TICT), leading to emission quenching. These findings demonstrate the sensitivity of 2-Br-3-NH₂BA to environmental polarity, making it a promising candidate for color-tunable luminescent applications in optoelectronics and sensing. However, further studies in the solid state are required to validate its applicability in device architectures such as OLEDs. Full article

Nanomaterials are interesting due to their unexpected and unique properties arising from phenomena occurring at the so-called mesoscale (that is, between single atoms and bulk solids). Among nanomaterials, one may distinguish quantum dots, which are highly crystalline nanocrystals with sizes up to c.a. 10 nm. Due to the quantum confinement effect, quantum dots exhibit extraordinary electronic and optical properties and may be utilized in photocatalysis. Semiconducting quantum dots may absorb photons, which results in the excitation of electrons from valence to conducting bands. Excited electrons in the conducting band and positive holes in the valence band may interact with chemical molecules (e.g., with water molecules), forming highly reactive radicals. Consequently, quantum dots may be utilized in advanced oxidation processes based on the action of light (i.e., photo-based advanced oxidation processes). Furthermore, quantum dots have advantages, such as having a tunable energy band gap and relative cost-effectiveness. Advanced oxidation processes are very important in the context of the constantly increasing pollution of the natural environment. Contaminants of emerging concern, such as pesticides, endocrine-disrupting compounds, and flame retardants, are still being detected in naturally present water. Such compounds may be degraded using advanced oxidation processes, utilizing quantum dots as photocatalysts. However, many operational parameters (such as quantum dots’ properties, including the means of their preparation) influence the efficiency of such processes; thus, detailed studies are being conducted. Full article

The rising demand for sustainable energy solutions has spurred the development of advanced materials for photovoltaic devices. Among these, transparent conductive oxides (TCOs) play a pivotal role in enhancing device efficiency, particularly in silicon-based solar cells. However, the reliance on indium-based TCOs like ITO raises concerns over cost and material scarcity, prompting the search for more abundant and scalable alternatives. This study focuses on the fabrication and characterization of aluminum-doped zinc oxide (ZnO:Al, AZO) thin films deposited via Atomic Layer Deposition (ALD), targeting their application as transparent conductive oxides in silicon solar cells. The ZnO:Al thin films were synthesized by alternating supercycles of ZnO and Al₂O₃ depositions at 225 °C, allowing precise control of composition and thickness. Structural, optical, and electrical properties were assessed using Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), Raman spectroscopy, spectroscopic ellipsometry, and four-point probe measurements. The results confirmed the formation of uniform, crack-free ZnO:Al thin films with a spinel-type ZnAl₂O₄ crystalline structure. Optical analyses revealed high transparency (more than 80%) and tunable refractive indices (1.64 ÷ 1.74); the energy band gap was 2.6 ÷ 3.07 eV, while electrical measurements demonstrated low sheet resistance values, reaching 85 Ω/□ for thicker films. This combination of optical and electrical properties underscores the potential of ALD-grown AZO thin films to meet the stringent demands of next-generation photovoltaics. Integration of Zn:Al thin films into silicon solar cells led to an optimized photovoltaic performance, with the best cell achieving a short-circuit current density of 36.0 mA/cm² and a power conversion efficiency of 15.3%. Overall, this work highlights the technological relevance of ZnO:Al thin films as a sustainable and cost-effective alternative to conventional TCOs, offering pathways toward more accessible and efficient solar energy solutions. Full article

Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization. Full article

This article provides a brief overview of the research on localized optical states called Tamm plasmons (TPs) and their potential applications, which have been extensively studied in recent decades. These states arise under the influence of incident light at the interface between a metal film and a medium with the properties of a Bragg mirror, or between two media with the properties of a Bragg mirror. The localization of the states in the interfacial region is a consequence of the negative dielectric constant of the metal and the presence of a photonic band gap of the Bragg reflector. Optically, TPs appear as resonant reflection dips or peaks in the transmission and absorption spectra in the region corresponding to the photonic band gap. The relative simplicity of creating a Tamm structure and the significant sensitivity of TPs to its parameters make them attractive for applications. The formation of broadband and tunable TP modes in hybrid structures containing, in particular, rugate filters and porous distributed Bragg reflectors are considered. Considerable attention is paid to TP designs that include liquid crystals, which allow for the remote tuning of the TP spectrum without the mechanical restructuring of the system. The application of TPs in sensors, thermal emitters, absorbers, laser generation, and the experimental capabilities of TP-liquid crystal devices are also discussed. Full article

In this article, a series of novel conducting copolymers P(FuPy-co-EDOT) are prepared via cyclic voltammetry electropolymerization method by using N-furfuryl pyrrole (FuPy) and 3,4-ethylenedioxythiophene (EDOT) as comonomers. The molecular structure, surface morphology, electrochemical, and optical properties of the resulting copolymers are characterized in detail upon varying the feed ratios of FuPy/EDOT in the range of 1/1 to 1/9. The results demonstrate that the prepared P(FuPy-co-EDOT) copolymers with a higher proportion of EDOT units (FuPy/EDOT: 2/8~1/9) possess good redox activity, tunable optical absorption performances, and low band gaps (1.75~1.86 eV). Spectroelectrochemistry studies indicate that the resulting copolymers with increased EDOT units show strengthened electrochromic characteristics, exhibiting a red-to-green-to-blue multicolor reversible transition, especially for the P(FuPy₁-co-EDOT₉) copolymer films. They also show increased optical contrast (9~34%), fast response time (0.8~2.4 s), and good coloring efficiency (110~362 cm² C⁻¹). Additionally, the complementary bilayer P(FuPy-co-EDOT)/PEDOT electrochromic devices (ECDs) are also assembled and evaluated to hold excellent electrochromic switching performances with relatively high optical contrast (25%), rapid response time (0.9 s), and satisfactory coloring efficiency (416 cm² C⁻¹). Together with the superior open circuit memory and cycling stability, they can be used as a new type of electrochromic material and have considerable prospects as promising candidates for electrochromic devices. Full article

In this study, Ni/Ba co-doped NaNbO₃ ceramics (NBNNO_x) were synthesized using a solid-state method to explore the effects of Ni²⁺ and Ba²⁺ ion substitution on the structural, optical, and dielectric properties of NaNbO₃. X-ray diffraction (XRD) confirmed that the ceramics retained an orthorhombic structure, with crystallinity improving as the doping content (x) increased. Significant lattice distortions induced by the Ni/Ba co-doping were observed, which were essential for preserving the perovskite structure. Raman spectroscopy revealed local structural distortions, influencing optical properties and promoting relaxor behavior. Diffuse reflectance measurements revealed a significant decrease in band gap energy from 3.34 eV for undoped NaNbO₃ to 1.08 eV at x = 0.15, highlighting the impact of co-doping on band gap tunability. Dielectric measurements indicated relaxor-like behavior at room temperature for x = 0.15, characterized by frequency-dependent anomalies in permittivity and dielectric loss, likely due to ionic disorder and structural distortions. These findings demonstrate the potential of Ni/Ba co-doped NaNbO₃ ceramics for lead-free perovskite solar cells and other functional devices, where tunable optical and dielectric properties are highly desirable. Full article

In this study, undoped and Ni-doped ZnS nanoparticles were fabricated using a hydrothermal method to explore their structural, optical, and surface properties. X-ray diffraction (XRD) analysis confirmed the cubic crystal structure of ZnS, with the successful incorporation of Ni ions at various doping levels (2%, 4%, 6%, and 8%) without disrupting the overall lattice configuration. The average particle size for undoped ZnS was found to be 5.27 nm, while the Ni-doped samples exhibited sizes ranging from 5.45 nm to 5.83 nm, with the largest size observed at 6% Ni doping before a reduction at higher concentrations. Fourier-transform infrared (FTIR) spectroscopy identified characteristic Zn–S vibrational bands, with shifts indicating successful Ni incorporation into the ZnS lattice. UV–visible spectroscopy revealed a decrease in the optical band gap from 3.72 eV for undoped ZnS to 3.54 eV for 6% Ni-doped ZnS, demonstrating tunable optical properties due to Ni doping, which could enhance photocatalytic performance under visible light. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) analyses confirmed the uniform distribution of Ni within the ZnS matrix, while X-ray photoelectron spectroscopy (XPS) provided further confirmation of the chemical states of the elements. Ni doping of ZnS nanoparticles alters the surface area and pore structure, optimizing the material’s textural properties for enhanced performance. These findings suggest that Ni-doped ZnS nanoparticles offer promising potential for applications in photocatalysis, optoelectronics, and other fields requiring specific band gap tuning and particle size control. Full article

Gas sensing is essential for detecting and measuring gas concentrations across various environments, with applications in environmental monitoring, industrial safety, and healthcare. The integration of two-dimensional (2D) materials, organic materials, and metal oxides has significantly advanced gas sensor technology, enhancing its sensitivity, selectivity, and response times at room temperature. This review examines the progress in optically activated gas sensors, with emphasis on 2D materials, metal oxides, and organic materials, due to limited studies on their use in optically activated gas sensors, in contrast to other traditional gas-sensing technologies. We detail the unique properties of these materials and their impact on improving the figures of merit (FoMs) of gas sensors. Transition metal dichalcogenides (TMDCs), with their high surface-to-volume ratio and tunable band gap, show exceptional performance in gas detection, especially when activated by UV light. Graphene-based sensors also demonstrate high sensitivity and low detection limits, making them suitable for various applications. Although organic materials and hybrid structures, such as metal–organic frameworks (MoFs) and conducting polymers, face challenges related to stability and sensitivity at room temperature, they hold potential for future advancements. Optically activated gas sensors incorporating metal oxides benefit from photoactive nanomaterials and UV irradiation, further enhancing their performance. This review highlights the potential of the advanced materials in developing the next generation of gas sensors, addressing current research gaps and paving the way for future innovations. Full article

Polymer-stabilized cholesteric liquid crystals (PSCLCs) have emerged as promising candidates for one-dimensional photonic lattices that enable precise tuning of the photonic band gap (PBG). This work systematically investigates the effect of polymer concentrations on the AC electric field-induced tuning of the PBG in PSCLCs, in so doing it explores a range of concentrations and provides new insights into how polymer concentration affects both the stabilization of cholesteric textures and the electro-optic response. We demonstrate that low polymer concentrations (≈3 wt. %) cause a blue shift in the short wavelength band edge, while high concentrations (≈10 wt. %) lead to a contraction and deterioration of the reflection band. Polarization optical microscopy was conducted to confirm the phase transition induced by the application of an electric field. The observations confirm that increased polymer concentration stabilizes the cholesteric texture. Particularly, the highly desired fingerprint texture was stabilized in a sample with 10 wt. % of the polymer, whereas it was unstable for lower polymer concentrations. Additionally, higher polymer concentrations also improved the dissymmetry factor and stability of the lasing emission, with the dissymmetry factor reaching the value of around 2 for samples with 10 wt. % of polymer additive. Our results provide valuable comprehension into the design of advanced PSCLC structures with tunable optical properties, enhancing device performance and paving the way for innovative photonic applications. Full article

Colloidal quantum dots (CQDs) show unique properties that distinguish them from their bulk form, the so-called quantum confinement effects. This feature manifests in tunable size-dependent band gaps and discrete energy levels, resulting in distinct optical and electronic properties. The investigation direction of colloidal quantum dots (CQDs) materials has started switching from high-performing materials based on Pb and Cd, which raise concerns regarding their toxicity, to more environmentally friendly compounds, such as AgBiS₂. After the first breakthrough in solar cell application in 2016, the development of AgBiS₂ QDs has been relatively slow, and many of the fundamental physical and chemical properties of this material are still unknown. Investigating the growth of AgBiS₂ QDs is essential to understanding the fundamental properties that can improve this material’s performance. This review comprehensively summarizes the synthesis strategies, ligand choice, and solar cell fabrication of AgBiS₂ QDs. The development of PbS QDs is also highlighted as the foundation for improving the quality and performance of AgBiS₂ QD. Furthermore, we prospectively discuss the future direction of AgBiS₂ QD and its use for solar cell applications. Full article

Tungsten disulfide (WS₂) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS₂. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS₂ through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications. Full article

Low-dimension materials such as transition metal dichalcogenides (TMDCs) have received extensive research interest and investigation for electronic and optoelectronic applications. Due to their unique widely tunable band structures, they are good candidates for next-generation optoelectronic devices. Particularly, their photoluminescence properties, which are fundamental for optoelectronic applications, are highly sensitive to the nature of the band gap. Monolayer TMDCs in the room temperature range have presented a direct band gap behavior and bright photoluminescence. In this work, we investigate a popular TMDC material WSe₂’s photoluminescence performance using a Raman spectroscopy laser with temperature dependence. With temperature variation, the lattice constant and the band gap change dramatically, and thus the photoluminescence spectra are changed. By checking the photoluminescence spectra at different temperatures, we are able to reveal the nature of direct-to-indirect band gap in monolayer WSe₂. We also implemented density function theory (DFT) simulations to computationally investigate the band gap of WSe₂ to provide comprehensive evidence and confirm the experimental results. Our study suggests that monolayer WSe₂ is at the transition boundary between the indirect and direct band gap at room temperature. This result provides insights into temperature-dependent optical transition in monolayer WSe₂ for quantum control, and is important for cultivating the potential of monolayer WSe₂ in thermally tunable optoelectronic devices operating at room temperature. Full article

Van der Waals (vdW) heterostructures provide an effective strategy for exploring and expanding the potential applications of two-dimensional materials. In this study, we employ first-principles density functional theory (DFT) to investigate the geometric, electronic, and optical properties of MoGe₂N₄/AlN and MoSiGeN₄/AlN vdW heterostructures. The stable MoGe₂N₄/AlN heterostructure exhibits an indirect band gap semiconductor with a type-I band gap arrangement, making it suitable for optoelectronic devices. Conversely, the stable MoSiGeN₄/AlN heterostructure demonstrates various band gap arrangements depending on stacking modes, rendering it suitable for photocatalysis applications. Additionally, we analyze the effects of mechanical strain and vertical electric field on the electronic properties of these heterostructures. Our results indicate that both mechanical strain and vertical electric field can adjust the band gap. Notably, application of an electric field or mechanical strain leads to the transformation of the MoGe₂N₄/AlN heterostructure from a type-I to a type-II band alignment and from an indirect to a direct band transfer, while MoSiGeN₄/AlN can transition from a type-II to a type-I band alignment. Type-II band alignment is considered a feasible scheme for photocatalysis, photocells, and photovoltaics. The discovery of these characteristics suggests that MoGe₂N₄/AlN and MoSiGeN₄/AlN vdW heterostructures, despite their high lattice mismatch, hold promise as tunable optoelectronic materials with excellent performance in optoelectronic devices and photocatalysis. Full article