Search Results (50)

In extremely harsh high-temperature environments in aerospace, industrial manufacturing and other fields, traditional ultrasonic temperature measurement technology has certain limitations. This paper proposes a differential single crystal sapphire ultrasonic temperature measurement method based on the magnetostrictive effect. This method abandons the traditional sensitive flexural structure and uses two single-crystal sapphire waveguides of the same material, same diameter, and slightly different lengths as sensing elements. By measuring the time delay difference between their end-face echoes, the sound velocity is inverted and the temperature is measured. COMSOL multi-physics v6.1 simulation was used to optimize the bias magnetic field design of the magnetostrictive transducer, which improved the system’s energy conversion efficiency and high-temperature stability. Experimental results show that in the range of 300–1200 °C, the sensor delay increases monotonically with increasing temperature, the sound speed shows a downward trend, and the repeatability error is less than 5%; the differential processing method effectively suppresses common mode noise in the range of 300–700 °C, and still shows high sensitivity above 800 °C. This research offers a technical solution with high reliability and accuracy for temperature monitoring in extreme environments such as those characterized by high temperatures and high pressures. Full article

Mg-doped gallium oxide films were prepared on single crystal sapphire substrates through radio frequency magnetron sputtering technology, and then AlN films of different thicknesses were deposited on them as passivation layers. Finally, Pt interdigitated electrodes were prepared through mask plate and ion sputtering technology to make metal–insulator–semiconductor–insulator–metal (MISIM) photodetectors. The influence of the AlN passivation layer on the optical properties and photodetection performance of the device was investigated using UV-Vis (ultraviolet-visible absorption spectroscopy) spectrophotometer and a Keith 4200 semiconductor tester. The device’s performance was significantly enhanced. Among them, the MISIM-structured device achieves a responsivity of 2.17 A/W, an external quantum efficiency (EQE) of 1100%, a specific detectivity (D*) of 1.09 × 10¹² Jones, and a photo-to-dark current ratio (PDCR) of 2200. The results show that different thicknesses of AlN passivation layers have an effect on the detection performance of Mg-doped β-Ga₂O₃ films in the UV detection of the solar-blind UV region. The AlN’s thickness has little effect on the bandgap when it is 3 nm and 5 nm, and the bandgap increases at 10 nm. The transmittance of the film increases with the increase in AlN thickness and decreases when the AlN’s thickness increases to 10 nm. The photocurrent exhibits a non-monotonic dependence on AlN thickness at 10 V, and the dark current gradually decreases. The thickness of the AlN passivation layer also has a significant impact on the response characteristics of the detector, and the response characteristics of the device are best when the thickness of the AlN passivation layer is 5 nm. The responsiveness, detection rate, and external quantum efficiency of the device first increase and then decrease with the thickness of the AlN layer, and comprehensive performance is best when the thickness of the AlN passivation layer is 5 nm. The reason is that the AlN layer plays a passivating role on the surface of Ga₂O₃ films, reducing surface defects and inhibiting its capture of photogenerated carriers, while the appropriate thickness of the AlN layer increases the barrier height at the semiconductor interface, forming a built-in electric field and improving the response speed. Finally, the AlN layer inhibits the adsorption and desorption processes between the photogenerated electron–hole pair and O₂, thereby retaining more photogenerated non-equilibrium carriers, which also helps enhance photoelectric detection performance. Full article

Direct growth of high-quality, Bernal-stacked bilayer graphene (BLG) on dielectric substrates is crucial for electronic and optoelectronic devices, yet it remains hindered by poor film quality, uncontrollable thickness, and high-density grain boundaries. In this work, a facile, catalyst-assisted method to grow high-quality, single-crystalline BLG directly on dielectric substrates (SiO₂/Si, sapphire, and quartz) was demonstrated. A single-crystal monolayer graphene template was first employed as a seed layer to facilitate the homoepitaxial synthesis of single-crystalline BLG directly on insulating substrates. Nanostructure Cu powders were used as the remote catalysis to provide long-lasting catalytic activity during the graphene growth. Transmission electron microscopy confirms the single-crystalline nature of the resulting BLG domains, which validates the superiority of the homoepitaxial growth technique. Raman spectroscopy and electrical measurement results indicate that the quality of the as-grown BLG is comparable to that on metal substrate surfaces. Field-effect transistors fabricated directly on the as-grown BLG/SiO₂/Si showed a room temperature carrier mobility as high as 2297 ± 3 cm² V⁻¹ s⁻¹, which is comparable to BLG grown on Cu and much higher than that reported on in-sulators. Full article

Single sapphire crystals has been widely used in technology such as light emitting diodes, lasers, high-temperature and high-voltage devices, special windows, and optical systems, and grinding is an important process of their machining. In order to reveal the influence of the grinding wheel speed, grinding depth, and feed rate on the ground surface quality of sapphire crystals, a three-factor and five-level orthogonal experiment was designed and completed. Variance and range analysis was conducted on the experimental results using the surface roughness Ra and subsurface crack damage depth (SSD) as evaluation indicators, and optimized parameter combinations were explored. Furthermore, mathematical prediction models for the power regression of the Ra and SSD were established based on the experimental data. The research results indicate that within the range of the process parameters used in this experiment, the grinding process did not achieve the full ductile removal of the material. Some of the material was removed in a brittle mode, forming fractured pits on the ground surface, and median crack propagation occurred in the subsurface, forming a subsurface microcrack damage layer. The influence of the grinding parameters on the Ra and SSD showed a consistent trend, which was that the parameter with the greatest impact was the grinding wheel speed, followed by the feed rate and grinding depth. The Ra and SSD obtained under the optimized grinding parameter combination were 0.326 μm and 2.86 μm, respectively. The research results provide an experimental basis and guidance for improving the surface quality of sapphire crystals during grinding. Full article

In this work, selected numerical simulation aspects are analyzed in terms of their effect on predictions of the m-c interface. The fixed-grid enthalpy porosity phase change model, which is highly attractive in the field of modeling sapphire crystallization processes, is examined for its sensitivity to the mushy zone parameter as well as the grid resolution. A further focus is set to the simulation of thermal transport including internal radiation in the crystal and the melt via the finite volume method. Depending on the purpose of the investigation, different requirements on the angular resolutions are relevant. While most of the m-c interface as well as the temperature distribution remain practically unchanged at reasonable resolutions, a high sensitivity of the m-c interface in the near-wall region is demonstrated. This sensitivity is also observed in terms of radiative transport and, hence, the total heat transfer. Full article

We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a previously reported multi-step growth method. Omega-2theta scans confirmed the GaAs (111) orientation. Samples grown at 700 °C displayed the highest crystal quality with minimal defects and strain, evidenced by narrow FWHM values of the rocking curve. By varying the As/Ga flux ratio and the growth temperature, we significantly improved the quality of the GaAs layer on sapphire, as compared to that obtained in multi-step studies. Photoluminescence measurements at room temperature and 77 K further support these findings. This study underscores the critical role of the As/Ga flux ratio and growth temperature in optimizing GaAs epitaxial growth on sapphire. Full article

Single-crystal sapphire (α-Al₂O₃) has been widely used in semiconductor, optics, communication, national defense, and other fields. Before application, an ultra-smooth surface which is scratch free and subsurface damage free is essential. Furthermore, the sapphire has unique qualities such as significant rigidity and chemical stability, which make it extremely arduous to process. Chemical mechanical polishing (CMP) is recognized as the final process to reduce the roughness and eliminate surface defects of a sapphire surface. In this review, the materials and equipment used for the chemical polishing of a sapphire wafer are summarized, and the surface nanoscale changes of sapphire wafer are reviewed from the angles of regulating polishing-process parameters, composition of polishing slurry including that which is nano-abrasive, a pH regulator, a complexing agent, and other additives, as well as hybrid CMP technologies. The outlook and future applications are also summarized. Full article

Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques. The nucleation of Ge proceeds by forming (111) oriented three-dimensional islands with two rotational twin domains about the growth axis. The boundaries between the twin grains are the origin of the 0.2% strain and tilt grains. The transition to a single-grain orientation reduces the strain and results in a better-quality Ge buffer. Understanding the role of thickness on material quality during the Ge(111)/Al₂O₃(0001) epitaxy is vital for achieving device quality when using group IV material on the sapphire platform. Full article

In this paper, we present the preparation of few-layer MoS₂ films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS₂ grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (n_s from ~1 × 10¹³ to ~3.4 × 10¹³ cm⁻² from T = 300 K to 500 K), with a donor ionization energy of E_i = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS₂/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕ_B ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS₂ on GaN in electronics/optoelectronics. Full article

In this work, three sets of single crystalline films (SCF) of Al₂O₃:Mn sapphire, YAlO₃:Mn perovskite (YAP:Mn), and Y₃Al₅O₁₂:Mn garnet (YAG:Mn), with a nominal Mn content of 0.1%, 1%, and 10 atomic percent (at.%) in the melt-solutions, were crystallized by the liquid phase epitaxy (LPE) method onto sapphire, YAP and YAG substrates, respectively. We have also calculated the average segregation coefficient of Mn ions for Al₂O₃:Mn, YAP:Mn and YAG:Mn SCFs with Mn content in the melt-solution in the 0.1–10% concentration range, which was equal to 0.1, 0.14 and 0.2, respectively. The main goal of the conducted research was the spectroscopic determination of the preferable valence states of manganese ions which were realized in the SCFs of sapphire, perovskite and garnet depending on the Mn content. For this purpose, the absorption, cathodoluminescence (CL), photoluminescence (PL) emission/excitation spectra and PL decay kinetics of Al₂O₃:Mn, YAP:Mn and YAG:Mn SCFs with different Mn concentrations were studied. Based on the CL and PL spectra, we showed that Mn ions, depending on the Mn content in the melt-solution, are incorporated in Al₂O₃:Mn, YAP:Mn and YAG:Mn SCFs in the different charged states and are located in the different crystallographic positions of the mentioned oxide lattices. We have observed the presence of the luminescence of Mn⁴⁺, Mn³⁺ and Mn²⁺ valence states of manganese ions in CL spectra in all SCFs under study with 0.1 and 1% Mn concentrations. Namely, the Mn⁴⁺ ion valence state with the main sharp emission bands peaked at 642 and 672 nm, related to the ²E → ⁴A₂ transitions, was found in the luminescence spectra of the all studied Al₂O₃:Mn SCFs. The luminescence of the Mn²⁺ valence state was found only in YAP:Mn and YAG:Mn SCFs, grown from melt solution with 1% Mn content, in the emission bands peaked at 525 and 560 nm, respectively, related to the ⁴T₁ → ⁶A₁ transitions. The PL and CL spectra of YAP:Mn and YAG:Mn SCFs with the Mn content in the 0.1–1% range show that the main valence state of manganese ions in these films is Mn³⁺ with the main emission bands peaking at 655 and 608 nm, respectively, related to the ¹T₂ → ⁵E transitions. Meanwhile, higher than 1% Mn content in the melt solution causes a strong concentration quenching of luminescence of all Mn centers in Al₂O₃:Mn, YAP:Mn and YAG:Mn SCFs. Full article

Ultra-wide bandgap Ga₂O₃-based optoelectronic devices have attracted considerable attention owing to their special significance in military and commercial applications. Using RF magnetron sputtering and post-annealing, monoclinic Ga₂O₃ films of various thicknesses were created on a c-plane sapphire substrate (0001). The structural and optical properties of β-Ga₂O₃ films were then investigated. The results show that all β-Ga₂O₃ films have a single preferred orientation ($2(\_)$01) and an average transmittance of more than 96% in the visible wavelength range (380–780 nm). Among them, the sample with a 90-minute sputtering time has the best crystal quality. This sample was subsequently used to construct a metal-semiconductor-metal (MSM), solar-blind, ultraviolet photodetector. The resulting photodetector not only exhibits excellent stability and sunblind characteristics but also has an ultra-high responsivity (46.3 A/W) and superb detectivity (1.83 × 10¹³ Jones). Finally, the application potential of the device in solar-blind ultraviolet imaging was verified. Full article

Single-crystal sapphire specimen (α-Al₂O₃) have been widely applied in the semiconductor industry, microelectronics, and so on. In order to shorten the production time and improve the processing efficiency of sapphire processing, an integrated fixed-abrasive tool (FAT) based on solid-phase reactions is proposed in this article. The optimal FAT composition is determined using a preliminary experiment and orthogonal experiments. The mass fraction of the abrasives is chosen as 55 wt%, and the mass ratio of SiO₂/Cr₂O₃ is 2. Surface roughness R_a decreased from 580.4 ± 52.7 nm to 8.1 ± 0.7 nm after 150 min, and the average material removal rate was 14.3 ± 1.2 nm/min using the prepared FAT. Furthermore, FAT processing combined with chemical mechanical polishing (CMP) was shortened by 1.5 h compared to the traditional sapphire production process in obtaining undamaged sapphire surfaces with a roughness of R_a < 0.4 nm, which may have the potential to take the place of the fine lapping and rough polishing process. Full article

The luminescent Z-scan technique with time resolution is applied to the study of the luminescence properties of CH₃NH₃PbBr₃ single crystals representative of the family of hybrid organic–inorganic lead perovskites successfully applied recently in photovoltaics and currently investigated as potential nanosecond scintillators. The third harmonic of Ti-sapphire laser (λ = 266 nm) with a pulse duration of 26 fs and 1 kHz frequency was applied for the luminescence excitation creating the charge carriers with the estimated density from 10¹⁷ to 10²¹ cm⁻³ in the temperature range from 13 to 300 K. Temperature and excitation density dependence of the luminescence yield and kinetics is interpreted with the consideration of the temperature-dependent binding of electrons and holes into excitons, a saturation of defects responsible for the non-radiative relaxation channel competing with exciton creation; absorption saturation resulting in the increased penetration depth of the excitation radiation and hence the increased contribution of the re-absorption. Full article

Chemical vapor deposition synthesis of graphene on polycrystalline copper substrates from methane is a promising technique for industrial production and application. However, the quality of grown graphene can be improved by using single-crystal copper (111). In this paper, we propose to synthesize graphene on epitaxial single-crystal Cu film deposited and recrystallized on a basal-plane sapphire substrate. The effect of film thickness, temperature, and time of annealing on the size of copper grains and their orientation is demonstrated. Under optimized conditions, the copper grains with the (111) orientation and a record size of several millimeters are obtained, and the single-crystal graphene is grown over their entire area. The high quality of synthesized graphene has been confirmed by Raman spectroscopy, scanning electron microscopy, and the sheet resistance measurements by the four point probe method. Full article

In this paper, a fiber-optic Fabry–Perot (F–P) vibration sensor that can work at 800 °C is proposed. The F–P interferometer is composed of an upper surface of inertial mass placed parallel to the end face of the optical fiber. The sensor was prepared by ultraviolet-laser ablation and three-layer direct-bonding technology. Theoretically, the sensor has a sensitivity of 0.883 nm/g and a resonant frequency of 20.911 kHz. The experimental results show that the sensitivity of the sensor is 0.876 nm/g in the range of 2 g to 20 g at an operating frequency of 200 Hz at 20 °C. The nonlinearity was evaluated from 20 °C to 800 °C with a nonlinear error of 0.87%. In addition, the z-axis sensitivity of the sensor was 25 times higher than that of the x-axis and y-axis. The vibration sensor will have wide high-temperature engineering-application prospects. Full article