Search Results (873)

The 795 nm wavelength corresponds to the D1 transition of rubidium atoms and is widely used in atomic optical pumping, atomic clocks, magnetometers, and precision spectroscopy. For compact free-space collimation, beam shaping, and efficient fiber coupling, edge-emitting semiconductor lasers with reduced fast-axis (vertical) divergence are highly desirable, yet low-divergence designs at 795 nm remain limited. Here, we propose and demonstrate low-divergence photonic-crystal epitaxy (LD–PC) for 795 nm edge-emitting lasers. By engineering a periodic n-side photonic-crystal stack to place the fundamental vertical mode near the photonic band edge, the vertical mode is expanded while maintaining effective modal discrimination. Narrow-ridge Fabry–Pérot lasers based on GaAsP/AlGaAs single-quantum-well epitaxy were fabricated and characterized. The optimized LD–PC device (3 μm ridge width, 1 mm cavity length) delivers 227 mW at 200 mA with a threshold current of 23 mA, a slope efficiency of 1.28 W/A, and a peak wall-plug efficiency of 55% under continuous-wave operation at 25 °C. The measured far-field divergences (FWHMs) are 7.16° and 18.83° in the lateral and vertical directions, respectively, corresponding to a reduction in the vertical divergence from >40° in the reference structure to <20° with LD–PC. These results validate photonic-crystal epitaxy as an effective route toward compact, high-performance, low-divergence 795 nm semiconductor laser sources for rubidium-based atomic systems. Full article

Although the corrosion properties of Ti-6Al-4V have been widely studied, the differences in passive film evolution and corrosion mechanism between wrought and SLMed Ti-6Al-4V in acidic service environments are still unclear. In this work, the corrosion behaviors of wrought and selective laser melting (SLMed) Ti-6Al-4V alloys in 0.05 mol/L H₂SO₄ solution were systematically investigated using electrochemical impedance spectroscopy, potentiodynamic polarization curves, Mott–Schottky analysis and XPS depth profiling. Wrought and SLM-fabricated Ti-6Al-4V were selected to reveal the effects of typical forming processes on corrosion resistance, considering their wide applications and distinct microstructures. Electrochemical results demonstrate that the wrought alloy exhibits a higher polarization resistance, a thicker passive film, and a lower corrosion current density, corresponding to superior corrosion resistance. Mott–Schottky analysis reveals that the passive films formed on both alloys show n-type semiconductor characteristics, while the wrought alloy possesses a lower carrier concentration, fewer defects, and a more compact film structure. XPS depth analysis indicates that the content of TiO₂ in the passive films decreases with increasing etching depth, accompanied by an increase in TiOOH, TiO, and metallic Ti. Full article

Jet machining is widely utilized in innovative technology industries, such as aerospace and semiconductors, due to its minimal thermal damage. However, with the increasingly stringent surface quality requirements of modern manufacturing, conventional jet technologies face limitations in achieving ultra-precision surface finishing and high material removal rates. To address these challenges and adapt to this new situation, multi-energy field-assisted jet machining has emerged as a novel concept, integrating laser, ultrasonic, and magnetic fields. This paper reviews the scientific development and recent advancements of these hybrid technologies within the field of ultra-precision machining. The physical interaction mechanisms between the auxiliary energy fields and the waterjet are elucidated. Specifically, the effects of laser thermal softening, ultrasonic cavitation, and magnetic focusing on new mechanisms of material removal and surface topography are systematically analyzed. The process capabilities and applications of each method are evaluated. Finally, current technical challenges are identified, and the future trends in ultra-precision jet machining are discussed. Full article

We report on sub-50 fs pulse generation from a diode-pumped mode-locked laser based on an ytterbium-doped monoclinic potassium yttrium double tungstate crystal operating in the 1 μm spectral region. Pumping by a low-power, spatially single-mode, fiber-coupled laser diode at 976 nm, a maximum continuous-wave output power of 433 mW at 1066.1 nm was obtained. Using a quartz-based intracavity Lyot filter, an exceptionally broad continuous-wavelength tuning range of 98 nm was achieved. In the mode-locked regime, the diode-pumped Yb:KY(WO₄)₂ laser delivered soliton pulses as short as 46 fs at a central wavelength of 1069.2 nm by employing a SEmiconductor Saturable Absorber Mirror. To the best of our knowledge, these results represent the broadest continuous-wave tuning range and the shortest pulse duration ever reported for lasers based on ytterbium-doped monoclinic double tungstate crystals. Full article

The photoelectrochemical splitting (PEC) of water provides a direct route to converting solar energy into storable chemical fuels. When illuminated, a semiconductor photoelectrode can absorb light and generate electron-hole pairs, which participate in interfacial redox reactions at the semiconductor-electrolyte junction. Therefore, to achieve high-performance PEC, photoelectrodes with optimized optical absorption and charge have been explored. This review analyzes recent fabrication strategies used to design photoelectrodes for the PEC dissociation of water. Physical fabrication techniques, including pulsed laser deposition, magnetron sputtering, and physical vapor deposition, allow for precise control of film thickness, crystallinity, and defect density, critical parameters for efficient charge transport. Typically, in physical methods, reported photocurrent densities span from ~10⁻² to 10¹ mAcm⁻², depending on the semiconductor material, nanostructure design, and interfacial engineering strategies. Chemical synthesis methods, such as hydrothermal growth, successive ion layer adsorption and reaction, and microemulsion techniques, provide greater compositional flexibility and enable controlled doping, surface functionalization, and the formation of nanostructured morphologies. Finally, hybrid fabrication strategies integrate physical and chemical processes within a single synthesis framework to combine structural precision with compositional tuning capabilities. These approaches enable the development of advanced architecture such as heterojunctions, core–shell nanostructures, and catalyst-modified interfaces, which enhance light absorption and optimize interfacial transfer. Furthermore, theoretical and computational tools are here analyzed as complementary approaches that guide the rational design and optimization of photoelectrochemical materials and devices. Full article

Silicon carbide (SiC), owing to its excellent physical and chemical properties, has emerged as a leading third-generation semiconductor material. Conventional diamond wire cutting faces challenges in producing ultra-large, ultra-thin wafers. In contrast, the femtosecond laser has attracted significant attention in recent years due to its low kerf loss and high slicing speed. However, during femtosecond laser stealth slicing, spherical aberration induced by the refractive index mismatch between air and the SiC crystal severely degrades the slicing quality. Based on the analysis and calculation of wavefront aberration at a specific focal depth of 175 μm, we designed and implemented a static aberration correction method to reduce the thickness of the modified layer and improve the slicing quality. This method effectively mitigates focus elongation caused by refractive index mismatch, thereby reducing the modified layer thickness and the tensile stress required for wafer separation, while improving the surface quality of the separated wafers. Furthermore, this method eliminates the need for active optical components in aberration correction, simplifying the system and avoiding errors associated with the limited response speed of active optics. The technique demonstrates potential for practical application in industrial wafer slicing. Full article

In the current paper, the nonlinear absorption characteristics and laser modulation performance of the ternary anisotropic semiconductor material ZrGeTe₄ were successfully explored. The recovery time of the ZrGeTe₄-PVA thin film was measured to be 5.74 ps by the pump–probe technology. By employing ZrGeTe₄ as a saturable absorber, a passive mode-locked Yb-doped fiber laser was demonstrated for the first time. In the 1 µm mode-locked operation, the central wavelength was 1031.29 nm, the pulse repetition rate was 24.85 MHz, and the pulse width was 786.3 ps. In an Er-doped fiber laser operating at a wavelength of 1561.10 nm, the pulse width was as short as 1.26 ps with a repetition rate of 4.38 MHz. The results show that ZrGeTe₄ has excellent broadband nonlinear optical characteristics. Full article

Microlasers are innovative photonics devices that have recently attracted attention for their unique characteristics, including compactness, broad spectral emission, and low lasing threshold. These properties are beneficial in biophotonics as these lasers can interact with biological materials without causing damage, especially for optical biosensing applications. Among the optical materials recently used as gain media in microlasers are organic dyes, rare-earth ions, fluorescent proteins, and semiconductors, including quantum dots and perovskites. Moreover, different optical cavities and current laser configurations have increased the versatility of microlasers. Recently, digital sensing methods based on novel algorithms, machine learning, and neural networks have been combined with microlaser systems to enhance their accuracy and expand their applications. This work provides a comprehensive review of recent progress in microlasers, covering gain media, microcavity types, and their applications in biophotonics, including conventional spectral-based sensing and new digital approaches for the biomedical field. Full article

Lyapunov-exponent-based diagnostics are widely used to quantify deterministic chaos in optically injected semiconductor lasers (OISLs). In most numerical implementations, the optical field is represented either in phasor coordinates $(A,\psi ,N)$ or in Cartesian quadrature coordinates $(X,Y,N)$. Although these representations are mathematically related through a smooth coordinate transformation away from vanishing field amplitude, their numerical realizations can exhibit markedly different robustness in variational calculations, directly impacting the reliability of Lyapunov exponent estimation and chaoticity maps. In this work, we present a systematic assessment of the numerical reliability of Lyapunov-based chaos analysis in master-slave optically injected semiconductor lasers using both phasor and quadrature formulations. The full Lyapunov spectrum was computed via a noise-free variational method that integrates the nonlinear dynamics together with the corresponding Jacobian equations using a fourth-order Runge-Kutta scheme combined with periodic QR orthonormalization. High-resolution Lyapunov maps were constructed in the injection strength-frequency detuning parameter space, and the consistency between both formulations was quantitatively evaluated. While both approaches reproduce the overall structure of chaotic and non-chaotic regions, the phasor formulation may generate spurious positive Lyapunov exponents in regimes where the optical field amplitude approaches low values. These discrepancies originate from singular terms proportional to $1/A$ and $1/A^2$ in the variational Jacobian of the phasor model, which can lead to numerical amplification and artificial chaotic signatures. The quadrature formulation avoids these singularities and provides numerically stable and physically consistent Lyapunov spectra across the explored parameter space. The results establish practical guidelines for robust chaos quantification in optically injected semiconductor lasers and highlight the importance of representation choice in variational Lyapunov analysis of nonlinear photonic systems. Full article

Metasurface is a kind of artificial structure which can efficiently control the amplitude, phase, frequency, and polarization of the light field. Metasurface polarization holographic encryption is a holographic encryption technology with the polarization state as a key, which has been widely concerned in recent years with advantages such as sub-wavelength pixels, precision adjustment, and high security factor. In this paper, the design and optimization of the unit structure of metasurface have been carried out, and the clear double-channel holographic image reproduction and good encryption effects have been realized afterwards. The results show that the relatively good polarization holographic encryption can be achieved by employing the designed Si nanorods with the length of 148 nm and width of 55 nm, respectively, which have been beforehand grown on SiO₂ substrates. Note that the periodic angle deflection around the Z axis was adopted by using the dual-channel optical rotation incidence with the wavelength of 632.8 nm. It has been theoretically demonstrated that information transmittance loss should be less and the image restoration effect should be satisfactory. A novel encryption method has also been proposed for the optical information processing and optical encryption, and the huge application potential of our theme has been revealed as the next-generation optical control platform in the near future. Full article

Metal–organic chemical vapor deposition (MOCVD) is a crystal growth technique used to achieve high-purity thin films, especially III–V materials, for fabricating semiconductor devices. It allows for thickness tunability, controlled doping, and composition of epilayers. This review focuses on the principle of MOCVD, its historical background, and its applications in III–V semiconductor devices such as solar cells, high electron mobility transistors (HEMTs), light-emitting diodes (LEDs), laser diodes (LDs), and photonic integrated circuits (PICs). This review highlights the recent developments in MOCVD aimed at improving its efficiency, performance, and sustainability. Finally, we emphasize emerging trends and challenges in MOCVD process innovation, reactor design, and material integration that are poised to drive the development of next-generation optoelectronic, photonic, and quantum technologies. Together, these findings underscore MOCVD’s pivotal role in enabling high-performance devices and sustaining leadership in post-Moore semiconductor technologies. Full article

Photonic-crystal surface-emitting lasers (PCSELs) are a new type of semiconductor laser with the potential for high-power output and high-beam-quality operation. Integrating a distributed Bragg reflector (DBR) into PCSELs can significantly enhance device performance. However, the growth of high-aluminum-content DBRs on photonic crystal layers with buried air holes presents two major challenges. First, the low mobility of aluminum atoms increases the propagation of surface roughness from the substrate into the DBR, increasing defect density. Second, the high growth temperatures required for DBR growth can deform the thermally unstable air holes. In this work, we investigated a metal–organic chemical vapor deposition (MOCVD) regrowth process for fabricating DBRs on PCSELs. By adjusting the epitaxial growth temperature and V/III ratio, we effectively controlled the diffusion of adatoms on both the sample surface and inside the holes. As a result, the root mean square (RMS) surface roughness decreased by ~96%, and uniform buried air holes were obtained, with a filling factor of ~ 18.8% and a depth of ~ 270 nm, without significant deformation. Finally, we fabricated a PCSEL device with a DBR structure, exhibiting a beam divergence angle of ~ 0.5° and a peak power of about 0.86 W. This study provides a key process solution for the development of PCSELs with high-quality DBR structures, enabling further improvement in optical output performance. Full article

Multijunction laser power converters are demonstrated for the first time with high efficiencies for average optical irradiances exceeding 150 W/cm². The GaAs-based photovoltaic power converting III-V heterostructures are designed with six GaAs subcells having an area of 0.14 cm², receiving up to 22 W of input power at ~811 nm, delivering over 14 W of output power. The maximum efficiencies are obtained in the range of 30 to 75 W/cm², and efficiencies > 64% are still obtained at 160 W/cm². The efficiency reduction for higher irradiance values originates predominantly from residual heat generated in the active layers. For example, in 100% duty factor measurements, the bandgap voltage offset saturates to W_oc ~ 170 mV. However, in pulsed mode, W_oc values as low as 150 mV have been obtained for a device base temperature of 20 °C. For smaller 0.029 cm² devices, W_oc values around 137 mV are obtained at 240 W/cm². Full article

We have demonstrated a high-power, polarization-maintaining all-fiber amplifier operating at a repetition rate of 1 MHz. The seed laser is a Semiconductor Saturable Absorber Mirror (SESAM) mode-locked oscillator with an 18.1 nm full width in half-maximum (FWHM) spectrum. The pulse duration is stretched to 1.1 ns using temperature-controlled chirped fiber Bragg gratings (TCFBGs) and subsequently amplified in a 40 µm core Yb-doped fiber, achieving a maximum output power of 37 W. The amplified laser exhibits excellent beam quality with an M² factor of 1.04. The pulse duration is compressed to 207 fs in a single-grating compressor with 86% efficiency, yielding an average power of 32 W, a pulse energy of 32 µJ, and a peak power of 154.6 MW. This high-power all-fiber femtosecond laser is a promising source for scientific and industrial applications. Full article

In this study, we analyzed the spatiotemporal distribution of annealing temperature using a dual-beam dynamic scanning annealing technique based on a CO₂ laser (10.6 μm) and a 785 nm laser, and the effects of laser energy density, scanning speed, and preheating temperature on the resulting temperature. We systematically examined the influence of key process parameters, including laser energy density, scanning speed, and preheating temperature, on the annealing temperature. Our aim was to optimize annealing conditions to enhance the electrical properties of the materials, as indicated by reduced sheet resistance, controlled diffusion depth of doped ions, and higher activation rates. This approach ensured high activation rates of doped ions while limiting dopant re-diffusion to merely 3.6 nm in the depth direction, as confirmed by concentration profile analysis. Furthermore, based on temperature distribution, deformation of the wafer surface was analyzed. The results indicate that under the employed process parameters, no significant adverse effects on wafer flatness or structural integrity were observed. Full article