High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy

The 795 nm wavelength corresponds to the D1 transition of rubidium atoms and is widely used in atomic optical pumping, atomic clocks, magnetometers, and precision spectroscopy. For compact free-space collimation, beam shaping, and efficient fiber coupling, edge-emitting semiconductor lasers with reduced fast-axis (vertical) divergence are highly desirable, yet low-divergence designs at 795 nm remain limited. Here, we propose and demonstrate low-divergence photonic-crystal epitaxy (LD–PC) for 795 nm edge-emitting lasers. By engineering a periodic n-side photonic-crystal stack to place the fundamental vertical mode near the photonic band edge, the vertical mode is expanded while maintaining effective modal discrimination. Narrow-ridge Fabry–Pérot lasers based on GaAsP/AlGaAs single-quantum-well epitaxy were fabricated and characterized. The optimized LD–PC device (3 μm ridge width, 1 mm cavity length) delivers 227 mW at 200 mA with a threshold current of 23 mA, a slope efficiency of 1.28 W/A, and a peak wall-plug efficiency of 55% under continuous-wave operation at 25 °C. The measured far-field divergences (FWHMs) are 7.16° and 18.83° in the lateral and vertical directions, respectively, corresponding to a reduction in the vertical divergence from >40° in the reference structure to <20° with LD–PC. These results validate photonic-crystal epitaxy as an effective route toward compact, high-performance, low-divergence 795 nm semiconductor laser sources for rubidium-based atomic systems.