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Keywords = ridged waveguide

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17 pages, 4032 KB  
Article
A Coupled Resonator Optical Waveguide-Based Refractive Index Sensor Employing Sagnac Loop Reflectors
by Muhammad A. Butt and Bartosz Janaszek
Sensors 2026, 26(5), 1448; https://doi.org/10.3390/s26051448 - 26 Feb 2026
Viewed by 101
Abstract
This work presents a silicon-on-insulator (SOI) refractive index sensor based on a coupled resonator optical waveguide (CROW) architecture employing two inversely coupled Sagnac loop reflectors (SLRs) connected through a self-coupled feedback waveguide. The structure exploits bidirectional propagation and discrete–continuum interference to produce sharp [...] Read more.
This work presents a silicon-on-insulator (SOI) refractive index sensor based on a coupled resonator optical waveguide (CROW) architecture employing two inversely coupled Sagnac loop reflectors (SLRs) connected through a self-coupled feedback waveguide. The structure exploits bidirectional propagation and discrete–continuum interference to produce sharp Fano-type asymmetric resonances with steep spectral slopes, enabling enhanced wavelength sensitivity. Numerical analysis demonstrates that tuning the loop radius, directional-coupler length, coupling gap, and feedback-path length provides precise control over free spectral range (FSR), resonance asymmetry, and spectral sharpness. The sensor exhibits consistent and monotonic resonance shifts for refractive index variations from 1.33 to 1.36, with sensitivities ranging from 106 to 120 nm/RIU for the ridge feedback configuration. Sensitivity is further improved by introducing a subwavelength grating (SWG) segment into the feedback waveguide, which enhances evanescent-field interaction and increases the overlap factor without compromising compactness or Fano asymmetry. The SWG-assisted design attains sensitivities of 185.8–212.2 nm/RIU, nearly doubling sensitivity. The proposed coupled-SLR CROW provides a compact footprint, high-Q resonances, and flexible spectral engineering through accessible geometric parameters. These characteristics highlight the potential of the coupled-SLR and SWG-enhanced CROW as a promising platform for high-resolution, photonic refractive index sensing applications on SOI. Full article
(This article belongs to the Special Issue Waveguide-Based Sensors and Applications)
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16 pages, 13695 KB  
Article
InGaN Laser Diode with Spin-on-Glass Isolation Fabricated by Planarization and Etch-Back Process
by Katarzyna Piotrowska-Wolińska, Szymon Grzanka, Łucja Marona, Krzysztof Gibasiewicz, Anna Kafar and Piotr Perlin
Micromachines 2026, 17(2), 142; https://doi.org/10.3390/mi17020142 - 23 Jan 2026
Viewed by 277
Abstract
We report on the fabrication and characterization of InGaN-based ridge-waveguide laser diodes employing spin-on-glass (SOG) as the insulation and planarization layer. In contrast to conventional silicon dioxide (SiO2) isolation deposited by PECVD, the SOG approach provides improved surface planarity, reduced processing [...] Read more.
We report on the fabrication and characterization of InGaN-based ridge-waveguide laser diodes employing spin-on-glass (SOG) as the insulation and planarization layer. In contrast to conventional silicon dioxide (SiO2) isolation deposited by PECVD, the SOG approach provides improved surface planarity, reduced processing complexity, and lower fabrication cost. The laser structures were grown on GaN substrates by MOCVD, with the active region consisting of In0.11Ga0.89N quantum wells. Following ridge formation and SOG deposition, an etch-back process was used to form the electrical contacts. We have demonstrated the formation of high-quality insulating surfaces with strong adhesion to the ridge sidewalls. When using a Ni protective layer, the fabricated devices exhibited favorable electrical and optical characteristics and achieved stable laser operation under both pulsed and continuous-wave conditions. These results indicate that the SOG-based insulation process represents a promising alternative for the scalable and cost-effective fabrication of InGaN laser diodes targeting advanced photonic applications. Full article
(This article belongs to the Section D1: Semiconductor Devices)
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13 pages, 4033 KB  
Article
A Low-Sidelobe Fully Metallic Ridge Gap Waveguide Antenna Array for W-Band Applications
by Huixia Jiang, Lili Sheng, Pengsheng Nie, Yu Feng, Jinfang Wen, Jianbo Ji and Weiping Cao
Sensors 2026, 26(2), 602; https://doi.org/10.3390/s26020602 - 15 Jan 2026
Viewed by 379
Abstract
To address the critical demand for high-gain, low-sidelobe, and high-efficiency antennas in W-band arrays, this work presents a low-sidelobe all-metal array antenna based on ridge gap waveguide technology. The design employs a three-layer contactless metal structure, integrating a stepped-ridge feeding network with Taylor [...] Read more.
To address the critical demand for high-gain, low-sidelobe, and high-efficiency antennas in W-band arrays, this work presents a low-sidelobe all-metal array antenna based on ridge gap waveguide technology. The design employs a three-layer contactless metal structure, integrating a stepped-ridge feeding network with Taylor amplitude distribution and a higher-order mode resonant cavity. This integration enables efficient power distribution and low-loss transmission while eliminating the need for conventional welding or bonding processes. Measurement results indicate that the antenna exhibits a reflection coefficient below −10 dB across the 92.5–103.5 GHz. The in-band gain exceeds 25.8 dBi with less than 1 dB fluctuation, and the radiation efficiency surpasses 78%. Specifically, the sidelobe levels in both E- and H-planes remain below −17.5 dB, reaching under −19.5 dB at 94 GHz, while cross-polarization is better than −30 dB. The proposed antenna demonstrates high gain, low sidelobe, and high efficiency, showing promising potential for applications in millimeter-wave radar, imaging, and 6G communication systems. Full article
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9 pages, 3340 KB  
Communication
Broadband Trilayer Adiabatic Edge Coupler on Thin-Film Lithium Tantalate for NIR Light
by Shiqing Gao, Xinke Xing, Shuai Chen and Kaixuan Chen
Photonics 2026, 13(1), 41; https://doi.org/10.3390/photonics13010041 - 31 Dec 2025
Viewed by 377
Abstract
This work addresses the challenge of realizing broadband, low-loss fiber-to-waveguide coupling in the short-wavelength near-infrared range (700–1050 nm), where the required fine structural dimensions and taper tips approach or even exceed current fabrication limits, resulting in tight fabrication tolerances and degraded coupling efficiency. [...] Read more.
This work addresses the challenge of realizing broadband, low-loss fiber-to-waveguide coupling in the short-wavelength near-infrared range (700–1050 nm), where the required fine structural dimensions and taper tips approach or even exceed current fabrication limits, resulting in tight fabrication tolerances and degraded coupling efficiency. We propose a broadband trilayer adiabatic edge coupler on a thin-film lithium tantalate platform that requires only two standard lithography and etching steps. The design integrates a crossed bilayer taper and a dual-core mode converter to achieve adiabatic mode transformation from a ridge to a thin strip waveguide, ensuring excellent fabrication tolerance and process simplicity. Simulations predict a minimum coupling loss of 0.57 dB at 850 nm, which includes the transmission through the complete edge-coupler structure, along with a 0.5-dB bandwidth exceeding 140 nm. The proposed structure provides a broadband, low-loss, and fabrication-tolerant interface for short-wavelength photonic systems such as quantum photonics, biosensing, and visible-light communications. Full article
(This article belongs to the Special Issue Advanced Photonic Integration Technology and Devices)
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11 pages, 2146 KB  
Communication
Structural Design and Experimental Investigation of a 1.65 µm Tapered Semiconductor Laser with InGaAlAs MQWs (On InP)
by Yuan Feng, Weichen Geng, Jinghang Yang, Zhipeng Wei, Jilong Tang, Cong Zhang, Huimin Jia and Lijun Guo
Photonics 2025, 12(11), 1107; https://doi.org/10.3390/photonics12111107 - 10 Nov 2025
Viewed by 711
Abstract
This paper presents the design and fabrication of a 1.65 μm tapered semiconductor laser based on an InGaAlAs multiple quantum well structure (grown) on InP. Through theoretical modeling and parametric optimization simulations, it was established that an etching depth of 0.8 μm for [...] Read more.
This paper presents the design and fabrication of a 1.65 μm tapered semiconductor laser based on an InGaAlAs multiple quantum well structure (grown) on InP. Through theoretical modeling and parametric optimization simulations, it was established that an etching depth of 0.8 μm for the ridge waveguide and a taper angle of 6° effectively confine the optical field and suppress high-order mode lasing. Based on these optimized parameters, a tapered semiconductor laser with a ridge width of 2 μm and a cavity length of 2000 μm was successfully fabricated. Systematic characterization was conducted under continuous-wave operation at 25 °C. The device exhibits outstanding overall performance: a maximum continuous-wave output power of 19.3 mW, a peak wavelength of 1653 nm, a spectral line width of 0.793 nm, and a side-mode suppression ratio (SMSR) as high as 49 dB, demonstrating excellent spectral purity. Far-field measurements further reveal that at an injection current of 30 mA, the vertical and horizontal far-field divergence angles are 41.02° and 15.26°, respectively, with a well-defined Gaussian beam profile. This study provides an effective technical approach for the design and fabrication of high-performance semiconductor lasers in the 1.65 μm band. The developed device shows significant potential for applications in free-space optical communication, LiDAR, and gas sensing. Full article
(This article belongs to the Special Issue Modern Semiconductor Lasers: From VCSELs to QCLs)
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19 pages, 3617 KB  
Article
Supersymmetric Single-Lateral-Mode GaN-Based Ridge-Waveguide Edge-Emitting Lasers
by Łukasz Piskorski
Materials 2025, 18(19), 4453; https://doi.org/10.3390/ma18194453 - 24 Sep 2025
Viewed by 787
Abstract
High-power nitride-based edge-emitting lasers with low-divergence Gaussian beams are useful for applications including laser surgery, material processing, and 3D printing. Fundamental lateral mode operation is typically achieved using narrow or shallow ridges. However, narrow ridges limit the active region, while shallow ridges can [...] Read more.
High-power nitride-based edge-emitting lasers with low-divergence Gaussian beams are useful for applications including laser surgery, material processing, and 3D printing. Fundamental lateral mode operation is typically achieved using narrow or shallow ridges. However, narrow ridges limit the active region, while shallow ridges can allow higher-order mode lasing. To address these challenges, this study applies a supersymmetry approach using optical coupling between neighbouring ridges to confine the fundamental mode while suppressing higher-order modes. Two nitride-based edge-emitting laser configurations—double-ridge and triple-ridge waveguides—are analysed, with a focus on ridge-width tolerances and the effects of gain and absorption. Both configurations achieve strong mode discrimination. However, the triple-ridge waveguide structure exhibits a mode separation ratio more than twice that of the double-ridge waveguide, making it promising for high-power single-mode operation. The results of this study provide a basis for further study of supersymmetry effects in nitride lasers. Full article
(This article belongs to the Section Optical and Photonic Materials)
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14 pages, 1721 KB  
Article
Figure of Merit for Gas Overtone Spectroscopy on a Chip in Near-Infrared (NIR)
by Uzziel Sheintop and Alina Karabchevsky
Sensors 2025, 25(16), 5092; https://doi.org/10.3390/s25165092 - 16 Aug 2025
Viewed by 935
Abstract
The development of compact, CMOS-compatible gas sensors is critical for advancing real-time environmental monitoring and industrial diagnostics. In this study, we present a detailed numerical investigation of integrated photonic waveguide designs—such as ridge and slot—optimized for overtone-based gas spectroscopy in the near-infrared range. [...] Read more.
The development of compact, CMOS-compatible gas sensors is critical for advancing real-time environmental monitoring and industrial diagnostics. In this study, we present a detailed numerical investigation of integrated photonic waveguide designs—such as ridge and slot—optimized for overtone-based gas spectroscopy in the near-infrared range. By evaluating both the evanescent-field confinement and curvature-induced losses across multiple silicon-on-insulator platforms, we identify optimal geometries that maximize light–analyte interactions while minimizing bending attenuation. Our findings provide essential design guidelines for high-performance, low-footprint gas sensors. Full article
(This article belongs to the Special Issue Feature Papers in Optical Sensors 2025)
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15 pages, 2929 KB  
Article
Graphene-Loaded LiNbO3 Directional Coupler: Characteristics and Potential Applications
by Yifan Liu, Fei Lu, Hui Hu, Haoyang Du, Yan Liu and Yao Wei
Nanomaterials 2025, 15(14), 1116; https://doi.org/10.3390/nano15141116 - 18 Jul 2025
Viewed by 1034
Abstract
This study explores the impact of graphene integration on lithium niobate (LiNbO3, LN) ridge waveguides and directional couplers, focusing on coupling efficiency, polarization-dependent light absorption, and temperature sensitivity. Experimental and simulation results reveal that graphene loading significantly alters the effective mode [...] Read more.
This study explores the impact of graphene integration on lithium niobate (LiNbO3, LN) ridge waveguides and directional couplers, focusing on coupling efficiency, polarization-dependent light absorption, and temperature sensitivity. Experimental and simulation results reveal that graphene loading significantly alters the effective mode refractive index and enhances waveguide coupling, enabling precise control over light transmission and power distribution. The temperature-dependent behavior of graphene–LN structures demonstrates strong thermal sensitivity, with notable changes in output power ratios between cross and through ports under varying temperatures. These findings highlight the potential of graphene–LN hybrid devices for compact, high-performance photonic circuits and temperature sensing applications. This study provides valuable insights into the design of advanced integrated photonic systems, paving the way for innovations in optical communication, sensing, and quantum technologies. Full article
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15 pages, 2714 KB  
Article
A Low-Loss and High-Bandwidth Horizontally Polarized Transition Between Rectangular Polymer Dielectric Waveguide and Microstrip Line for Array Application
by Haibing Zhan, Xiaochun Li, Changsheng Sun and Ken Ning
Electronics 2025, 14(12), 2345; https://doi.org/10.3390/electronics14122345 - 8 Jun 2025
Cited by 1 | Viewed by 1012
Abstract
To achieve interconnects of rectangular polymer dielectric waveguides (PDWs) at the W-band, this paper presents a novel low-loss and high-bandwidth horizontally polarized transition between a rectangular PDW and a microstrip line (ML), which can achieve a rectangular PDW array. The proposed structure consists [...] Read more.
To achieve interconnects of rectangular polymer dielectric waveguides (PDWs) at the W-band, this paper presents a novel low-loss and high-bandwidth horizontally polarized transition between a rectangular PDW and a microstrip line (ML), which can achieve a rectangular PDW array. The proposed structure consists of a patch, a bent ridge waveguide, a tapered ridge waveguide, a dielectric-filled waveguide, and a tapered horn. An equivalent circuit model is established for synthesis design, and the transition is manufactured utilizing printed circuit board (PCB) and computerized numerical control (CNC) technologies. A rectangular PDW interconnect with two designed transitions is constructed and experiments are conducted. The measured results indicate that the rectangular PDW interconnect with two transitions operates within a frequency range (|S11| < −10 dB) of 81.9–108.2 GHz, and the insertion loss of the transition is 0.51–2.01 dB in this frequency range. Then, the designed transition is used to achieve a rectangular PDW array with two rectangular PDWs and two transitions, which has a far-end crosstalk (FEXT) of −55.4 to −21.7 dB in the frequency range of 78.1–110 GHz. Full article
(This article belongs to the Section Circuit and Signal Processing)
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9 pages, 3584 KB  
Article
Parameter Study of 500 nm Thick Slot-Type Photonic Crystal Cavities for Cavity Optomechanical Sensing
by Zhe Li, Jun Liu, Yi Zhang, Chenguwei Xian, Yifan Wang, Kai Chen, Gen Qiu, Guangwei Deng, Yongjun Huang and Boyu Fan
Photonics 2025, 12(6), 584; https://doi.org/10.3390/photonics12060584 - 8 Jun 2025
Cited by 1 | Viewed by 3398
Abstract
In recent years, research on light-matter interactions in silicon-based micro/nano cavity optomechanical systems demonstrates high-resolution sensing capabilities (e.g., sub-fm-level displacement sensitivity). Conventional 2D photonic crystal (PhC) cavity optomechanical sensors face inherent limitations: thin silicon layers (200–300 nm) restrict both the mass block (critical [...] Read more.
In recent years, research on light-matter interactions in silicon-based micro/nano cavity optomechanical systems demonstrates high-resolution sensing capabilities (e.g., sub-fm-level displacement sensitivity). Conventional 2D photonic crystal (PhC) cavity optomechanical sensors face inherent limitations: thin silicon layers (200–300 nm) restrict both the mass block (critical for thermal noise suppression) and optical Q-factor. Enlarging the detection mass in such thin layers exacerbates in-plane height nonuniformity, severely limiting high-precision sensing. This study proposes a 500 nm thick silicon-based 2D slot-type PhC cavity design for advanced sensing applications, fabricated on a silicon-on-insulator (SOI) substrate with optimized air slot structures. Systematic parameter optimization via finite element simulations defines structural parameters for the 1550 nm band, followed by 6 × 6 × 6 combinatorial experiments on lattice constant, air hole radius, and line-defect waveguide width. Experimental results demonstrate a loaded Q-factor of 57,000 at 510 nm lattice constant, 175 nm air hole radius, and 883 nm line-defect waveguide width (measured sidewall angle: 88.4°). The thickened silicon layer delivers dual advantages: enhanced mass block for thermal noise reduction and high Q-factor for optomechanical coupling efficiency, alongside improved ridge waveguide compatibility. This work advances the practical development of CMOS-compatible micro-opto-electromechanical systems (MOEMS). Full article
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19 pages, 8477 KB  
Article
Wideband Dual-Polarized PRGW Antenna Array with High Isolation for Millimeter-Wave IoT Applications
by Zahra Mousavirazi, Mohamed Mamdouh M. Ali, Abdel R. Sebak and Tayeb A. Denidni
Sensors 2025, 25(11), 3387; https://doi.org/10.3390/s25113387 - 28 May 2025
Cited by 2 | Viewed by 2301
Abstract
This work presents a novel dual-polarized antenna array tailored for Internet of Things (IoT) applications, specifically designed to operate in the millimeter-wave (mm-wave) spectrum within the frequency range of 30–60 GHz. Leveraging printed ridge gap waveguide (PRGW) technology, the antenna ensures robust performance [...] Read more.
This work presents a novel dual-polarized antenna array tailored for Internet of Things (IoT) applications, specifically designed to operate in the millimeter-wave (mm-wave) spectrum within the frequency range of 30–60 GHz. Leveraging printed ridge gap waveguide (PRGW) technology, the antenna ensures robust performance by eliminating parasitic radiation from the feed network, thus significantly enhancing the reliability and efficiency required by IoT communication systems, particularly for smart cities, autonomous vehicles, and high-speed sensor networks. The proposed antenna achieves superior radiation characteristics through a cross-shaped magneto-electric (ME) dipole backed by an artificial magnetic conductor (AMC) cavity and electromagnetic bandgap (EBG) structures. These features suppress surface waves, reduce edge diffraction, and minimize back-lobe emissions, enabling stable, high-quality IoT connectivity. The antenna demonstrates a wide impedance bandwidth of 24% centered at 30 GHz and exceptional isolation exceeding 40 dB, ensuring interference-free dual-polarized operation crucial for densely populated IoT environments. Fabrication and testing validate the design, consistently achieving a gain of approximately 13.88 dBi across the operational bandwidth. The antenna’s performance effectively addresses the critical requirements of emerging IoT systems, including ultra-high data throughput, reduced latency, and robust wireless connectivity, essential for real-time applications such as healthcare monitoring, vehicular communication, and smart infrastructure. Full article
(This article belongs to the Special Issue Design and Measurement of Millimeter-Wave Antennas)
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11 pages, 3175 KB  
Article
Design of Refractive Index Sensors Based on Valley Photonic Crystal Mach–Zehnder Interferometer
by Yuru Li, Hongming Fei, Xin Liu and Han Lin
Sensors 2025, 25(11), 3289; https://doi.org/10.3390/s25113289 - 23 May 2025
Cited by 4 | Viewed by 1983
Abstract
The refractive index is an important optical property of materials which can be used to understand the composition of materials. Therefore, refractive index sensing plays a vital role in biological diagnosis and therapy, material analysis, (bio)chemical sensing, and environmental monitoring. Conventional optical refractive [...] Read more.
The refractive index is an important optical property of materials which can be used to understand the composition of materials. Therefore, refractive index sensing plays a vital role in biological diagnosis and therapy, material analysis, (bio)chemical sensing, and environmental monitoring. Conventional optical refractive index sensors based on optical fibers and ridge waveguides have relatively large sizes of a few millimeters, making them unsuitable for on-chip integration. Photonic crystals (PCs) have been used to significantly improve the compactness of refractive index sensors for on-chip integration. However, PC structures suffer from defect-introduced strong scattering, resulting in low transmittance, particularly at sharp bends. Valley photonic crystals (VPCs) can realize defect-immune unidirectional transmission of topological edge states, effectively reducing the scattering loss and increasing the transmittance. However, optical refractive index sensors based on VPC structures have not been demonstrated. This paper proposes a refractive index sensor based on a VPC Mach–Zehnder interferometer (MZI) structure with a high forward transmittance of 0.91 and a sensitivity of 1534%/RIU at the sensing wavelength of λ = 1533.97 nm within the index range from 1.0 to 2.0, which is higher than most demonstrated optical refractive index sensors in the field. The sensor has an ultracompact footprint of 9.26 μm × 7.99 μm. The design can be fabricated by complementary metal–oxide semiconductor (CMOS) fabrication technologies. Therefore, it will find broad applications in biology, material science, and medical science. Full article
(This article belongs to the Section Optical Sensors)
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9 pages, 2868 KB  
Article
Ion-Implanted Diamond Blade Diced Ridge Waveguides in Pr:YLF—Optical Characterization and Small-Signal Gain Measurement
by Omer Altaher, Kore Hasse, Sergiy Suntsov, Hiroki Tanaka, Christian Kränkel, Istvan Bányász, Romana Mikšová and Detlef Kip
Appl. Sci. 2025, 15(9), 4956; https://doi.org/10.3390/app15094956 - 30 Apr 2025
Cited by 2 | Viewed by 1187
Abstract
Planar optical waveguides were fabricated in Pr:YLF crystals by ion implantation. In a further step, ridge waveguides were fabricated using precision diamond dicing. These enable strong light confinement and have propagation losses as low as 0.4 dB/cm. To study the influence of ion [...] Read more.
Planar optical waveguides were fabricated in Pr:YLF crystals by ion implantation. In a further step, ridge waveguides were fabricated using precision diamond dicing. These enable strong light confinement and have propagation losses as low as 0.4 dB/cm. To study the influence of ion implantation on the spectroscopic properties, fluorescence and lifetime measurements were conducted in the ridge waveguides. Under blue pumping, small-signal optical gains of 6.5 dB/cm and 5 dB/cm were demonstrated at wavelengths of 607 nm and 639 nm, respectively. These results make ion-implanted ridge waveguides in Pr:YLF promising candidates for compact integrated lasers in the visible spectral region with high output powers in the watt range. Full article
(This article belongs to the Section Optics and Lasers)
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12 pages, 4173 KB  
Article
A Permittivity Measurement Sensor Based on Ridge Substrate-Integrated Waveguide
by Hu Chen, Han Yan, Mingyi Gou, Kewen Hu and Ji Liu
Processes 2025, 13(5), 1347; https://doi.org/10.3390/pr13051347 - 28 Apr 2025
Cited by 1 | Viewed by 941
Abstract
In this paper, a novel ridge substrate-integrated waveguide (RSIW) sensor is proposed, and the RSIW is optimized and simulated using full-wave simulation. A RSIW-based system was developed for measuring the permittivity of substances, and a neural network algorithm was utilized to reconstruct the [...] Read more.
In this paper, a novel ridge substrate-integrated waveguide (RSIW) sensor is proposed, and the RSIW is optimized and simulated using full-wave simulation. A RSIW-based system was developed for measuring the permittivity of substances, and a neural network algorithm was utilized to reconstruct the permittivity in real time. The system was employed to measure the permittivity of mixed solutions of ethanol and deionized water, and the results were consistent with those obtained using a Keysight commercial probe. The relative errors of the real part and loss tangent were found to be less than 3% and 5%, respectively. These results indicate that the RSIW measuring apparatus is capable of accurate real-time measurement of the permittivity of materials. The simplicity of the manufacturing process, the reduced quantity of measurement samples, and the ease with which they can be prepared all contribute to the potential for microwave energy and microwave wastewater detection application. Full article
(This article belongs to the Special Issue Microwave Applications in Chemistry and Industry)
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12 pages, 10551 KB  
Article
On the Use of Ridge Waveguides to Synthesize Impedances
by Juan J. Flórez Rodríguez and Luis F. Herrán
Electronics 2025, 14(6), 1060; https://doi.org/10.3390/electronics14061060 - 7 Mar 2025
Viewed by 1198
Abstract
This work examines the feasibility of designing an impedance synthesis network based on a double-ridge waveguide (DRW). This design is based on the concept of the stepped-impedance line transformer as a cascade of transmission lines with different characteristic impedances, but using, in this [...] Read more.
This work examines the feasibility of designing an impedance synthesis network based on a double-ridge waveguide (DRW). This design is based on the concept of the stepped-impedance line transformer as a cascade of transmission lines with different characteristic impedances, but using, in this particular case, a stepped-ridge waveguide. It is shown that this structure is able to synthesize not only real impedances but an arbitrary impedance, following some restrictions explained in this paper. An impedance synthesis network based on DRW can have numerous applications, like being used in designing amplifiers, which would eventually make possible to integrate amplifiers in waveguide technology. Full article
(This article belongs to the Special Issue Microwave Devices: Analysis, Design, and Application)
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