Search Results (273)

This paper serves as a comprehensive and practical resource to guide researchers in selecting suitable metals for use as photocathodes in radio-frequency (RF) and superconducting radio-frequency (SRF) electron guns. It offers an in-depth review of bulk and thin-film metals commonly employed in many applications. The investigation includes the photoemission, optical, chemical, mechanical, and physical properties of metallic materials used in photocathodes, with a particular focus on key performance parameters such as quantum efficiency, operational lifetime, chemical inertness, thermal emittance, response time, dark current, and work function. In addition to these primary attributes, this study examines essential parameters such as surface roughness, morphology, injector compatibility, manufacturing techniques, and the impact of chemical environmental factors on overall performance. The aim is to provide researchers with detailed insights to make well-informed decisions on materials and device selection. The holistic approach of this work associates, in tabular format, all photo-emissive, optical, mechanical, physical, and chemical properties of bulk and thin-film metallic photocathodes with experimental data, aspiring to provide unique tools for maximizing the effectiveness of laser cleaning treatment. Full article

Occupied and unoccupied electronic states of altermagnetic MnTe(0001) single crystals were studied by photoemission and inverse-photoemission spectroscopies after establishing a reproducible surface cleaning procedure involving repeated sputtering and annealing cycles. The angle-resolved photoemission spectroscopy (ARPES) exhibited a hole-like band dispersion centered at the $\overline{\mathsf{\Gamma }}$ point, which was consistent with the reported ARPES results and our density functional theory (DFT) calculations with the on-site Coulomb interaction U. The observed Mn 3d↑-derived peak at −3.5 eV, however, significantly deviated from the DFT + U calculations. Meanwhile, the Mn 3d↓-derived peak at +3.0 eV observed by inverse-photoemission spectroscopy agreed well with the DFT + U results. Based on simulations of the spectral function employing an w-dependent model self-energy, we found significant relaxation effects in the electron-removal process, while such effects were negligible in the electron-addition process. Our study provides a comprehensive picture of electronic states, forming a solid foundation for understanding the magnetic and transport properties of MnTe. Full article

SnSe₂, as a prominent member of the post-transition metal dichalcogenides, exhibits many intriguing physical phenomena and excellent thermoelectric properties, calling for both fundamental study and potential application in two-dimensional (2D) devices. In this article, we realized the molecular beam epitaxial growth of SnSe₂ films on a $\sqrt{3}\times \sqrt{3}$-Sn reconstructed Si(111) surface. The analysis of reflection high-energy electron diffraction reveals the in-plane lattice orientation as SnSe₂[110]//$\sqrt{3}$-Sn [112]//Si [110]. In addition, the flat morphology of SnSe₂ film was identified by scanning tunneling microscopy (STM), implying the relatively strong adsorption effect of $\sqrt{3}$-Sn/Si(111) substrate to the SnSe₂ adsorbates. Subsequently, the interfacial charge transfer was observed by X-ray photoemission spectroscopy. Afterwards, the direct characterization of electronic structures was obtained via angle-resolved photoemission spectroscopy. In addition to proving the presence of interfacial charge transfer again, a new relatively flat in-gap band was found in monolayer and few-layer SnSe₂, which disappeared in multi-layer SnSe₂. The interface strain-induced partial structural phase transition of thin SnSe₂ films is presumed to be the reason. Our results provide important information on the characterization and effective modulation of electronic structures of SnSe₂ grown on $\sqrt{3}$-Sn/Si(111), paving the way for the further study and application of SnSe₂ in 2D electronic devices. Full article

Organic semiconductors have garnered significant interest owing to their low cost, flexibility, and suitability for large-area electronics, making them vital for burgeoning fields such as flexible electronics, wearable devices, and green energy technologies. The performance of organic electronic devices is crucially determined by their interfacial electronic structure. Specifically, interfacial phenomena such as band bending significantly influence carrier injection, transport, and recombination, making their control paramount for enhancing device performance. This review investigates the interplay among molecular orientation, interfacial charge transfer, and interfacial chemical reactions as the primary drivers of interface band bending. Furthermore, it critically examines effective strategies for optimizing interfacial properties via interface engineering, focusing on interlayer insertion and template layer methods. The review concludes with a summary and outlook, emphasizing the integration of interface design with material development and device architecture to realize next-generation, high-performance organic electronic devices exhibiting improved efficiency and stability. Full article

Large organic molecules and metal complexes are promising candidates for organic electronics, optoelectronics, and spintronics, with interfaces to metals being critical. Clean preparation in ultra-high vacuum (UHV) is ideal, but many systems are fragile and cannot be thermally sublimed. This study details the preparation of thin films of the metallacrown Cu(II)[12-MC_Cu(II)N(Shi)-4] (short: CuCu4) from the liquid phase using electrospray injection (ESI) and, in particular, liquid injection (LI). Both methods produce films with intact CuCu4 complexes, but they differ in the amount of co-adsorbed solvent molecules. Enhancements using an argon stream perpendicular to the molecular beam significantly reduce these contaminants. An additional effect occurs due to the counterions (HNEt₃)₂ of CuCu4. They are co-deposited by LI, but not by ESI. The advantages and limitations of the LI method are discussed in detail. The CuCu4 films prepared by different methods were analyzed with infrared (IR) spectroscopy, ultraviolet and X-ray photoelectron spectroscopy (UPS, XPS), and scanning tunneling microscopy (STM). For thicker films, ex situ and in situ prepared CuCu4 films to exhibit similar properties, but for studying interface effects or ultrathin films, in situ preparation is necessary. Full article

Increasing the number of phenylcarbazole (PC) units attached to the silicon atom in organic solid-state thin films led to a remarkable enhancement in charge mobility. Specifically, the charge mobility values exhibited an increase from 1.32 × 10⁻⁴ cm²/Vs for 3PCBP to 4.39 × 10^–4 cm²/Vs for 2MCBP, ultimately reaching 1.16 × 10^–3 cm²/Vs for MCBP. Notably, these enhancements were achieved while maintaining a high triplet energy of 3.01 eV. DFT calculations on the spin density distribution provided insights into the nature of the improved mobility while preserving the triplet energy. The accuracy of the DFT calculations was validated by comparing the results with experimental data from photoemission spectroscopy (PES). Mobility measurements, as contemplated by DFT, allowed for a comprehensive understanding of the factors influencing enhanced mobility while keeping the triplet energy constant. This study suggested that intramolecular charge transfers played a crucial role in reducing reorganization energy, showing an inverse dependence on the number of PCs. Consequently, it was inferred that the manipulation of PC units could effectively optimize charge transfer mechanisms, offering a promising avenue for tailoring organic thin films with improved electronic properties. Full article

The interfacial energy level alignment in the copper phthalocyanine/SiO₂/p-Si(100) heterojunction has been studied in dark conditions and under illumination. The element-sensitivity of the time-resolved X-ray photoemission provides a real-time picture of the photoexcited carrier dynamics at the interface and within the film, enabling one to distinguish between substrate and molecular contributions. We observe a molecule-to-substrate charge transfer under photoexcitation, which is directly related to the transient modification of the band bending in the substrate due to the surface photovoltage effect. Our results show that charge generation in the heterojunction is driven by the molecular layer in contact with the substrate. The different molecular orientation at the interface creates a new channel for charge injection in the substrate under photoexcitation. Full article

Single-photon sources with photon antibunching characteristics are essential for quantum information technologies. This paper investigates the potential of quaternary-alloy CdTeSeS colloidal core quantum dots (cQDs) as compact, room-temperature, and fiber-integrated single-photon sources. Single-photon emission from CdTeSeS cQDs was verified by measuring the second-order correlation function, $g^{\left(2\right)}\left(\tau \right)$, using a Hanbury-Brown and Twiss setup. A novel method to determine zero-time delay through afterpulsing analysis is presented. The results demonstrate strong photon antibunching with $g^{\left(2\right)}\left(0\right)=0.13$, confirming that the photoemission from the CdTeSeS cQDs function as a single-photon source. This work highlights the potential of CdTeSeS cQDs as reliable and efficient single-photon sources for practical use in fiber-based quantum information technologies. Full article

A Scanning Photoelectron Microscopy (SPEM) experiment has been applied to ZnO:N films deposited by Atomic Layer Deposition (ALD) under O-rich conditions and post-growth annealed in oxygen at 800 °C. State-of-the-Art spatial resolution (130 nm) allows for probing the electronic structure of single column of growth. The samples were cleaved under ultra-high vacuum (UHV) conditions to open atomically clean cross-sectional areas for SPEM experiment. It has been shown that different columns reveal considerably different shape of the valence band (VB) photoemission spectra and that some of them are shifted towards the bandgap. The shift of the VB maximum, which is associated with hybridization with acceptor states, was found to be correlated with carbon content measured as a relative intensity of the $C1s$ and $Zn3d$ core levels. Generalized Gradient Approximation (GGA) supplemented by +U correction was applied to both $Zn3d$ and $O2p$ orbitals for calculation of the $V_{\mathrm{Zn}}$ migration properties by the Nudged Elastic Band (NEB) method. The results suggest that interstitial -${\mathrm{CH}}_x$ groups facilitate the formation of acceptor complexes due to additional lattice perturbation. Full article

Uncrystallized indium-gallium-zinc-oxide (InGaZnO) thin-film transistors (TFTs) combined with an aluminum nitride (AlN) dielectric have been used to promote performance and steadiness. However, the high deposition temperature of AlN films limits their application in InGaZnO flexible TFTs. In this work, AlN layers were deposited via low-temperature plasma-enhanced atomic layer deposition (PEALD), and InGaZnO films were fabricated via high-power impulse magnetron sputtering (HIPIMS). The band alignment of the AlN/InGaZnO heterojunction was studied using the X-ray photoemission spectrum and ultraviolet visible transmittance spectrum. It was found that the AlN/InGaZnO system exhibited a staggered band alignment with a valence band offset ΔE_v of −1.25 ± 0.05 eV and a conduction band offset ΔE_c of 4.01 ± 0.05 eV. The results imply that PEALD AlN could be more useful for surface passivation than a gate dielectric to promote InGaZnO device reliability under atmospheric exposure. Full article

The family of BiS₂-based superconductors has attracted considerable attention since their discovery in 2012 due to the unique structural and electronic properties of these materials. Several experimental and theoretical studies have been performed to explore the basic properties and the underlying mechanism for superconductivity. In this review, we discuss the current understanding of pairing symmetry in BiS₂-based superconductors and particularly the role of point-contact spectroscopy in unravelling the mechanism underlying the superconducting state. We also review experimental results obtained with different techniques including angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, specific heat measurements, and nuclear magnetic resonance spectroscopy. The integration of experimental results and theoretical predictions sheds light on the complex interplay between electronic correlations, spin fluctuations, and Fermi surface topology in determining the coupling mechanism. Finally, we highlight recent advances and future directions in the field of BiS₂-based superconductors, underlining the potential technological applications. Full article

This paper presents an innovative exploration of advanced configurations for enhancing the efficiency of metallic and superconducting photocathodes (MPs and SCPs) produced via pulsed laser deposition (PLD). These photocathodes are critical for driving next-generation free-electron lasers (FELs) and plasma-based accelerators, both of which demand electron sources with improved quantum efficiency (QE) and electrical properties. Our approach compares three distinct photocathode configurations, namely: conventional, hybrid, and non-conventional, focusing on recent innovations. Hybrid MPs integrate a thin, high-performance, photo-emissive film, often yttrium or magnesium, positioned centrally on the copper flange of the photo-injector. For hybrid SCPs, a thin film of lead is used, offering a higher quantum efficiency than niobium bulk. This study also introduces non-conventional configurations, such as yttrium and lead disks partially coated with copper and niobium films, respectively. These designs utilize the unique properties of each material to achieve enhanced photoemission and long-term stability. The novelty of this approach lies in leveraging the advantages of bulk photoemission materials like yttrium and lead, while maintaining the electrical compatibility and durability required for integration into RF cavities. The findings highlight the potential of these configurations to significantly outperform traditional photocathodes, offering higher QE and extended operational lifetimes. This comparative analysis provides new insights into the fabrication of high-efficiency photocathodes, setting the foundation for future advancements in electron source technologies. Full article

For more than a decade, the unusual distribution of electrons observed in ARPES (angle-resolved photoemission spectroscopy) data within the energy range of ~30 meV to ~300 meV below the Fermi level, known as the ARPES energy range, has remained a puzzle in the field of iron-based superconductivity. As the electron–phonon coupling of FeSe/SrTiO₃ is very strong, our investigation is centered on exploring the synergistic interplay between spin-density waves (SDW) and charge-density waves (CDW) with differential phonons at the interface between antiferromagnetic maxima and minima under wave interference. Our analysis reveals that the synergistic energy is proportional to the ARPES energy range, as seen in the comparison between FeSe and FeSe/SrTiO₃. This finding may suggest that the instantaneous interplay between these intricate phenomena may play a role in triggering the observed energy range in ARPES. Full article

The first experimental results obtained by the ion beam-induced luminescence technique from the ceramic bodies of ancient tiles are reported in this work. The photon emission from the ceramic bodies is related to the starting minerals and the manufacturing conditions, particularly the firing temperature and cooling processes. Moreover, the results indicate that this non-destructive technique, performed under a helium-rich atmosphere instead of an in-vacuum setup and with acquisition times of only a few seconds, presents a promising alternative to traditional, often destructive, compositional characterisation methods. Additionally, by adding other ion beam-based techniques such as PIXE (Particle-Induced X-ray Emission) and PIGE (Particle-Induced Gamma-ray Emission), compositional information from light elements such as Na can also be inferred, helping to also identify the raw materials used. Full article

Halide perovskite materials have garnered significant research attention due to their remarkable performance in both photoharvesting photovoltaics and photoemission applications. Recently, self-assembled CsPbBr₃ superstructures (SSs) have been demonstrated to be promising lasing materials. In this study, we report the ultrastable two-photon-pumped amplified stimulated emission from a CsPbBr₃ SS/Ag hybrid microcavity with a low threshold of 0.8 mJ/cm² at room temperature. The experimental results combined with numerical simulations show that the CsPbBr₃ SS exhibits a significant enhancement in the electromagnetic properties in the hybrid microcavity on Ag film, leading to the uniform spatial temperature distribution under the irradiation of a pulsed laser, which is conducive to facilitate the recrystallization process of the QDs and improve their structural integrity and optical properties. This study provides a new idea for the application of CsPbBr₃/Ag hybrid microcavity in photonic devices, demonstrating its potential in efficient optical amplification and upconversion lasers. Full article