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Search Results (421)

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Keywords = nitride semiconductors

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13 pages, 2256 KiB  
Article
The Influence of the Ar/N2 Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices
by Piotr Jeżak, Aleksandra Seweryn, Marcin Klepka and Robert Mroczyński
Materials 2025, 18(17), 3940; https://doi.org/10.3390/ma18173940 - 22 Aug 2025
Abstract
Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories (RRAMs). In the case of commercial use of RRAMs, [...] Read more.
Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories (RRAMs). In the case of commercial use of RRAMs, it is beneficial that the applied materials would have to be compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. Fabricating methods of these materials can determine their stoichiometry and structural composition, which can have a detrimental impact on the electrical performance of manufactured devices. In this study, we present the influence of the Ar/N2 ratio during reactive magnetron sputtering of titanium nitride (TiN) electrodes on the resistive switching behavior of MIM devices. We used silicon oxide (SiOx) as a dielectric layer, which was characterized by the same properties in all fabricated MIM structures. The composition of TiN thin layers was controlled by tuning the Ar/N2 ratio during the deposition process. The fabricated conductive materials were characterized in terms of chemical and structural properties employing X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. Structural characterization revealed that increasing the Ar content during the reactive sputtering process affects the crystallite size of the deposited TiN layer. The resulting crystallite sizes ranged from 8 Å to 757.4 Å. The I-V measurements of fabricated devices revealed that tuning the Ar/N2 ratio during the deposition of TiN electrodes affects the RS behavior. Our work shows the importance of controlling the stoichiometry and structural parameters of electrodes on resistive switching phenomena. Full article
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19 pages, 2646 KiB  
Article
Fundamentals of Metal Contact to p-Type GaN—A New Multilayer Energy-Saving Design
by Konrad Sakowski, Cyprian Sobczak, Pawel Strak and Stanislaw Krukowski
Electronics 2025, 14(16), 3309; https://doi.org/10.3390/electronics14163309 - 20 Aug 2025
Viewed by 183
Abstract
The electrical properties of contacts to p-type nitride semiconductor devices, based on gallium nitride, were simulated by ab initio and drift-diffusion calculations. The electrical properties of the contact are shown to be dominated by the electron-transfer process from the metal to GaN, which [...] Read more.
The electrical properties of contacts to p-type nitride semiconductor devices, based on gallium nitride, were simulated by ab initio and drift-diffusion calculations. The electrical properties of the contact are shown to be dominated by the electron-transfer process from the metal to GaN, which is related to the Fermi-level difference, as determined by both ab initio and model calculations. The results indicate a high potential barrier for holes, leading to the non-Ohmic character of the contact. The electrical nature of the Ni–Au contact formed by annealing in an oxygen atmosphere was elucidated. The influence of doping on the potential profile of p-type GaN was calculated using the drift-diffusion model. The energy-barrier height and width for hole transport were determined. Based on these results, a new type of contact is proposed. The contact is created by employing multiple-layer implantation of deep acceptors. The implementation of such a design promises to attain superior characteristics (resistance) compared with other contacts used in bipolar nitride semiconductor devices. The development of such contacts will remove one of the main obstacles in the development of highly efficient nitride optoelectronic devices, both LEDs and LDs: energy loss and excessive heat production close to the multiple-quantum-well system. Full article
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24 pages, 5613 KiB  
Review
The Development of Hexagonal Boron Nitride Crystal Growth Technologies and Their Applications in Neutron Detection
by Wendong Song, Dan Liu, Fenglong Wang and Lu Zhang
Nanomaterials 2025, 15(16), 1256; https://doi.org/10.3390/nano15161256 - 15 Aug 2025
Viewed by 400
Abstract
Hexagonal boron nitride (h-BN), a wide-bandgap semiconductor with excellent thermal stability, high electrical resistivity, and strong neutron absorption capacity, has attracted growing interest in the field of solid-state neutron detection. This review summarizes the progress in h-BN crystal growth technologies, including HPHT, CVD, [...] Read more.
Hexagonal boron nitride (h-BN), a wide-bandgap semiconductor with excellent thermal stability, high electrical resistivity, and strong neutron absorption capacity, has attracted growing interest in the field of solid-state neutron detection. This review summarizes the progress in h-BN crystal growth technologies, including HPHT, CVD, and flux methods, highlighting their advantages and limitations. Among them, flux growth stands out for its simplicity and scalability in producing high-quality, large-area single crystals. The application potential of h-BN in next-generation neutron detectors is also discussed, along with key challenges such as 10B enrichment, crystal quality, and device integration. Full article
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19 pages, 7494 KiB  
Article
Fowler–Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin h-BN Layer Dependence and Performance Limits
by Jiarui Zhang, Yikun Li, Shijun Luo, Yan Zhang, Man Luo, Hailu Wang and Chenhui Yu
Nanomaterials 2025, 15(15), 1209; https://doi.org/10.3390/nano15151209 - 7 Aug 2025
Viewed by 447
Abstract
Hexagonal Boron Nitride (h-BN) is an exceptional dielectric material with significant potential for high-performance electronic and optoelectronic devices. While previous studies have explored its role in GaN-based MIS (metal/insulator/semiconductor) structures, the influence of few-layer h-BN on AlGaN MIS devices—particularly with [...] Read more.
Hexagonal Boron Nitride (h-BN) is an exceptional dielectric material with significant potential for high-performance electronic and optoelectronic devices. While previous studies have explored its role in GaN-based MIS (metal/insulator/semiconductor) structures, the influence of few-layer h-BN on AlGaN MIS devices—particularly with varying Al compositions—remains unexplored. In this work, we systematically investigate the Fowler–Nordheim tunneling effect in few-layer h-BN integrated into AlGaN MIS architectures, focusing on the critical roles h-BN layer count, AlGaN alloy composition, and interfacial properties in determining device performance. Through combined simulations and experiments, we accurately determine key physical parameters, such as the layer-dependent effective mass and band alignment, and analyze their role in optimizing MIS device characteristics. Our findings reveal that the 2D h-BN insulating layer not only enhances breakdown voltage and reduces leakage current but also mitigates interfacial defects and Shockley–Read–Hall recombination, enabling high-performance AlGaN MIS devices under elevated voltage and power conditions. This study provides fundamental insights into h-BN-based AlGaN MIS structures and advances their applications in next-generation high-power and high-frequency electronics. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor Material, Device and System Integration)
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20 pages, 4961 KiB  
Article
Optimization of Thermal Conductivity of Bismaleimide/h-BN Composite Materials Based on Molecular Structure Design
by Weizhuo Li, Run Gu, Xuan Wang, Chenglong Wang, Mingzhe Qu, Xiaoming Wang and Jiahao Shi
Polymers 2025, 17(15), 2133; https://doi.org/10.3390/polym17152133 - 3 Aug 2025
Viewed by 408
Abstract
With the rapid development of information technology and semiconductor technology, the iteration speed of electronic devices has accelerated in an unprecedented manner, and the market demand for miniaturized, highly integrated, and highly intelligent devices continues to rise. But when these electronic devices operate [...] Read more.
With the rapid development of information technology and semiconductor technology, the iteration speed of electronic devices has accelerated in an unprecedented manner, and the market demand for miniaturized, highly integrated, and highly intelligent devices continues to rise. But when these electronic devices operate at high power, the electronic components generate a large amount of integrated heat. Due to the limitations of existing heat dissipation channels, the current heat dissipation performance of electronic packaging materials is struggling to meet practical needs, resulting in heat accumulation and high temperatures inside the equipment, seriously affecting operational stability. For electronic devices that require high energy density and fast signal transmission, improving the heat dissipation capability of electronic packaging materials can significantly enhance their application prospects. In order to improve the thermal conductivity of composite materials, hexagonal boron nitride (h-BN) was selected as the thermal filling material in this paper. The BMI resin was structurally modified through molecular structure design. The results showed that the micro-branched structure and h-BN synergistically improved the thermal conductivity and insulation performance of the composite material, with a thermal conductivity coefficient of 1.51 W/(m·K) and a significant improvement in insulation performance. The core mechanism is the optimization of the dispersion state of h-BN filler in the matrix resin through the free volume in the micro-branched structure, which improves the thermal conductivity of the composite material while maintaining high insulation. Full article
(This article belongs to the Special Issue Electrical Properties of Polymer Composites)
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15 pages, 2806 KiB  
Article
Ni-MOF/g-C3N4 S-Scheme Heterojunction for Efficient Photocatalytic CO2 Reduction
by Muhammad Sabir, Mahmoud Sayed, Iram Riaz, Guogen Qiu, Muhammad Tahir, Khuloud A. Alibrahim and Wang Wang
Materials 2025, 18(14), 3419; https://doi.org/10.3390/ma18143419 - 21 Jul 2025
Viewed by 635
Abstract
The rapid recombination of photoinduced charge carriers in semiconductors remains a significant challenge for their practical application in photocatalysis. This study presents the design of a step-scheme (S-scheme) heterojunction composed of carbon nitride (g-C3N4) and nickel-based metal–organic framework (Ni-MOF) [...] Read more.
The rapid recombination of photoinduced charge carriers in semiconductors remains a significant challenge for their practical application in photocatalysis. This study presents the design of a step-scheme (S-scheme) heterojunction composed of carbon nitride (g-C3N4) and nickel-based metal–organic framework (Ni-MOF) to achieve enhanced charge separation. The establishment of an S-scheme charge transfer configuration at the interface of the Ni-MOF/g-C3N4 heterostructure plays a pivotal role in enabling efficient charge carrier separation, and hence, high CO2 photoreduction efficiency with a CO evolution rate of 1014.6 µmol g−1 h−1 and selectivity of 95% under simulated solar illumination. CO evolution represents an approximately 3.7-fold enhancement compared to pristine Ni-MOF. Density functional theory (DFT) calculations, supported by in situ irradiated X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) experimental results, confirmed the establishment of a well-defined and strongly bonded interface, which improves the charge transfer and separation following the S-scheme mechanism. This study sheds light on MOF-based S-scheme heterojunctions as fruitful and selective alternatives for practical CO2 photoreduction. Full article
(This article belongs to the Section Energy Materials)
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20 pages, 15575 KiB  
Article
Transport Properties of One-Dimensional van der Waals Heterostructures Based on Molybdenum Dichalcogenides
by Daulet Sergeyev and Kuanyshbek Shunkeyev
Crystals 2025, 15(7), 656; https://doi.org/10.3390/cryst15070656 - 18 Jul 2025
Viewed by 784
Abstract
The transport properties of one-dimensional van der Waals nanodevices composed of carbon nanotubes (CNTs), hexagonal boron nitride (hBN) nanotubes, and molybdenum dichalcogenide (MoX2) nanotubes were investigated within the framework of density functional theory (DFT). It was found that in nanodevices based [...] Read more.
The transport properties of one-dimensional van der Waals nanodevices composed of carbon nanotubes (CNTs), hexagonal boron nitride (hBN) nanotubes, and molybdenum dichalcogenide (MoX2) nanotubes were investigated within the framework of density functional theory (DFT). It was found that in nanodevices based on MoS2(24,24) and MoTe2(24,24), the effect of resonant tunneling is suppressed due to electron–phonon scattering. This suppression arises from the fact that these materials are semiconductors with an indirect band gap, where phonon participation is required to conserve momentum during transitions between the valence and conduction bands. In contrast, nanodevices incorporating MoSe2(24,24), which possesses a direct band gap, exhibit resonant tunneling, as quasiparticles can tunnel between the valence and conduction bands without a change in momentum. It was demonstrated that the presence of vacancy defects in the CNT segment significantly degrades quasiparticle transport compared to Stone–Wales (SW) defects. Furthermore, it was revealed that resonant interactions between SW defects in MoTe2(24,24)–hBN(27,27)–CNT(24,24) nanodevices can enhance the differential conductance under certain voltages. These findings may be beneficial for the design and development of nanoscale diodes, back nanodiodes, and tunneling nanodiodes. Full article
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17 pages, 2783 KiB  
Article
Hydrostatic-Pressure Modulation of Band Structure and Elastic Anisotropy in Wurtzite BN, AlN, GaN and InN: A First-Principles DFT Study
by Ilyass Ez-zejjari, Haddou El Ghazi, Walid Belaid, Redouane En-nadir, Hassan Abboudi and Ahmed Sali
Crystals 2025, 15(7), 648; https://doi.org/10.3390/cryst15070648 - 15 Jul 2025
Viewed by 461
Abstract
III-Nitride semiconductors (BN, AlN, GaN, and InN) exhibit exceptional electronic and mechanical properties that render them indispensable for high-performance optoelectronic, power, and high-frequency device applications. This study implements first-principles Density Functional Theory (DFT) calculations to elucidate the influence of hydrostatic pressure on the [...] Read more.
III-Nitride semiconductors (BN, AlN, GaN, and InN) exhibit exceptional electronic and mechanical properties that render them indispensable for high-performance optoelectronic, power, and high-frequency device applications. This study implements first-principles Density Functional Theory (DFT) calculations to elucidate the influence of hydrostatic pressure on the electronic, elastic, and mechanical properties of these materials in the wurtzite crystallographic configuration. Our computational analysis demonstrates that the bandgap energy exhibits a positive pressure coefficient for GaN, AlN, and InN, while BN manifests a negative pressure coefficient consistent with its indirect-bandgap characteristics. The elastic constants and derived mechanical properties reveal material-specific responses to applied pressure, with BN maintaining superior stiffness across the pressure range investigated, while InN exhibits the highest ductility among the studied compounds. GaN and AlN demonstrate intermediate mechanical robustness, positioning them as optimal candidates for pressure-sensitive applications. Furthermore, the observed nonlinear trends in elastic moduli under pressure reveal anisotropic mechanical responses during compression, a phenomenon critical for the rational design of strain-engineered devices. The computational results provide quantitative insights into the pressure-dependent behavior of III-N semiconductors, facilitating their strategic implementation and optimization for high-performance applications in extreme environmental conditions, including high-power electronics, deep-space exploration systems, and high-pressure optoelectronic devices. Full article
(This article belongs to the Section Materials for Energy Applications)
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34 pages, 1638 KiB  
Review
Recent Advances in Bidirectional Converters and Regenerative Braking Systems in Electric Vehicles
by Hamid Naseem and Jul-Ki Seok
Actuators 2025, 14(7), 347; https://doi.org/10.3390/act14070347 - 14 Jul 2025
Viewed by 1206
Abstract
As electric vehicles (EVs) continue to advance toward widespread adoption, innovations in power electronics are playing a pivotal role in improving efficiency, performance, and sustainability. This review presents recent progress in bidirectional converters and regenerative braking systems (RBSs), highlighting their contributions to energy [...] Read more.
As electric vehicles (EVs) continue to advance toward widespread adoption, innovations in power electronics are playing a pivotal role in improving efficiency, performance, and sustainability. This review presents recent progress in bidirectional converters and regenerative braking systems (RBSs), highlighting their contributions to energy recovery, battery longevity, and vehicle-to-grid integration. Bidirectional converters support two-way energy flow, enabling efficient regenerative braking and advanced charging capabilities. The integration of wide-bandgap semiconductors, such as silicon carbide and gallium nitride, further enhances power density and thermal performance. The paper evaluates various converter topologies, including single-stage and multi-stage architectures, and assesses their suitability for high-voltage EV platforms. Intelligent control strategies, including fuzzy logic, neural networks, and sliding mode control, are discussed for optimizing braking force and maximizing energy recuperation. In addition, the paper explores the influence of regenerative braking on battery degradation and presents hybrid energy storage systems and AI-based methods as mitigation strategies. Special emphasis is placed on the integration of RBSs in advanced electric vehicle platforms, including autonomous systems. The review concludes by identifying current challenges, emerging trends, and key design considerations to inform future research and practical implementation in electric vehicle energy systems. Full article
(This article belongs to the Special Issue Feature Papers in Actuators for Surface Vehicles)
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15 pages, 2579 KiB  
Article
Photo-Scanning Capacitance Microscopy and Spectroscopy Study of Epitaxial GaAsN Layers and GaAsN P-I-N Solar Cell Structures
by Adam Szyszka, Wojciech Dawidowski, Damian Radziewicz and Beata Ściana
Nanomaterials 2025, 15(14), 1066; https://doi.org/10.3390/nano15141066 - 9 Jul 2025
Viewed by 426
Abstract
This work presents a novel approach to investigating epitaxial GaAsN layers and GaAsN-based p-i-n solar cell structures using light-assisted scanning capacitance microscopy (SCM) and spectroscopy. Due to the technological challenges in growing high-quality GaAsN with controlled nitrogen incorporation, the epitaxial layers often exhibit [...] Read more.
This work presents a novel approach to investigating epitaxial GaAsN layers and GaAsN-based p-i-n solar cell structures using light-assisted scanning capacitance microscopy (SCM) and spectroscopy. Due to the technological challenges in growing high-quality GaAsN with controlled nitrogen incorporation, the epitaxial layers often exhibit inhomogeneity in their opto-electrical properties. By combining localized cross-section SCM measurements with wavelength-tunable optical excitation (800–1600 nm), we resolved carrier concentration profiles, internal electric fields, and deep-level transitions across the device structure at a nanoscale resolution. A comparative analysis between electrochemical capacitance–voltage (EC-V) profiling and photoluminescence spectroscopy confirmed multiple localized transitions, attributed to compositional fluctuations and nitrogen-induced defects within GaAsN. The SCM method revealed spatial variations in energy states, including discrete nitrogen-rich regions and gradual variations in the nitrogen content throughout the layer depth, which are not recognizable using standard characterization methods. Our results demonstrate the unique capability of the photo-scanning capacitance microscopy and spectroscopy technique to provide spatially resolved insights into complex dilute nitride structures, offering a universal and accessible tool for semiconductor structures and optoelectronic devices evaluation. Full article
(This article belongs to the Special Issue Spectroscopy and Microscopy Study of Nanomaterials)
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38 pages, 6778 KiB  
Review
Challenges and Opportunities for g-C3N4-Based Heterostructures in the Photodegradation of Environmental Pollutants
by Eduardo Estrada-Movilla, Jhonathan Castillo-Saenz, Benjamín Valdez-Salas, Álvaro Ortiz-Pérez, Ernesto Beltrán-Partida, Jorge Salvador-Carlos and Esneyder Puello-Polo
Catalysts 2025, 15(7), 653; https://doi.org/10.3390/catal15070653 - 4 Jul 2025
Viewed by 795
Abstract
Graphitic carbon nitride (g-C3N4) is emerging as one of the most promising non-metallic semiconductors for the degradation of pollutants in water by photocatalytic processes. Its exceptional reduction–oxidation (redox) potentials and adequate band gap of approximately 2.7 eV give it [...] Read more.
Graphitic carbon nitride (g-C3N4) is emerging as one of the most promising non-metallic semiconductors for the degradation of pollutants in water by photocatalytic processes. Its exceptional reduction–oxidation (redox) potentials and adequate band gap of approximately 2.7 eV give it the ability to absorb in the visible light range. However, the characteristic sensitivity to light absorption is limited, leading to rapid recombination of electron–hole pairs. Therefore, different strategies have been explored to optimize this charge separation, among which the formation of heterostructures based on g-C3N4 is highlighted. This review addresses recent advances in photocatalysis mediated by g-C3N4 heterostructures, considering the synthesis methods enabling the optimization of the morphology and active interface of these materials. Next, the mechanisms of charge transfer are discussed in detail, with special emphasis on type II, type S, and type Z classifications and their influence on the efficiency of photodegradation. Subsequently, the progress in the application of these photocatalysts for the degradation of water pollutants, such as toxic organic dyes, pharmaceutical pollutants, pesticides, and per- and polyfluoroalkyl substances (PFAS), are analyzed, highlighting both experimental advances and remaining challenges. Finally, future perspectives oriented towards the optimization of heterostructures, the efficiency of synthesis methods, and the practical application of these in photocatalytic processes for environmental remediation. Full article
(This article belongs to the Special Issue Design and Synthesis of Nanostructured Catalysts, 3rd Edition)
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18 pages, 2659 KiB  
Article
DFT Study of Initial Surface Reactions in Gallium Nitride Atomic Layer Deposition Using Trimethylgallium and Ammonia
by P. Pungboon Pansila, Seckson Sukhasena, Saksit Sukprasong, Worasitti Sriboon, Wipawee Temnuch, Tongsai Jamnongkan and Tanabat Promjun
Appl. Sci. 2025, 15(13), 7487; https://doi.org/10.3390/app15137487 - 3 Jul 2025
Viewed by 638
Abstract
The initial surface reaction of gallium nitride (GaN) grown by atomic layer deposition (GaN-ALD) was investigated using density functional theory (DFT) calculations. Trimethylgallium (TMG) and ammonia (NH3) were used as gallium (Ga) and nitrogen (N) precursors, respectively. DFT calculations at the [...] Read more.
The initial surface reaction of gallium nitride (GaN) grown by atomic layer deposition (GaN-ALD) was investigated using density functional theory (DFT) calculations. Trimethylgallium (TMG) and ammonia (NH3) were used as gallium (Ga) and nitrogen (N) precursors, respectively. DFT calculations at the B3LYP/6-311+G(2d,p) and 6-31G(d) levels were performed to compute relative energies and optimize chemical structures, respectively. TMG adsorption on Si15H18–(NH2)2 and Si15H20=(NH)2 clusters was modeled, where –NH2 and =NH surface species served as adsorption sites. The reaction mechanisms in the adsorption and nitridation steps were investigated. The results showed that TMG can adsorb on both surface adsorption sites. In the initial adsorption stage, TMG adsorbs onto =NH- and –NH2-terminated Si(100) surfaces with activation energies of 1.11 and 2.00 eV, respectively, indicating that the =NH site is more reactive. During subsequent NH3 adsorption, NH3 adsorbs onto the residual TMG on the =NH- and –NH2-terminated surfaces with activation energies of approximately 2.00 ± 0.02 eV. The reaction pathways indicate that NH3 adsorbs via similar mechanisms on both surfaces, resulting in comparable nitridation kinetics. Furthermore, this study suggests that highly reactive NH2 species generated in the gas phase from ionized NH3 may help reduce the process temperature in the GaN-ALD process. Full article
(This article belongs to the Section Surface Sciences and Technology)
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30 pages, 5199 KiB  
Review
Modification Strategies of g-C3N4-Based Materials for Enhanced Photoelectrocatalytic Degradation of Pollutants: A Review
by Yijie Zhang, Peng Lian, Xinyu Hao, Li Zhang, Lihua Yang, Li Jiang, Kaiyou Zhang, Lei Liao and Aimiao Qin
Inorganics 2025, 13(7), 225; https://doi.org/10.3390/inorganics13070225 - 3 Jul 2025
Viewed by 607
Abstract
Graphite carbon nitride (g-C3N4) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C3N4 materials have strong oxidation properties and are easy [...] Read more.
Graphite carbon nitride (g-C3N4) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C3N4 materials have strong oxidation properties and are easy to modify. The structure formation of g-C3N4-based materials makes a series of photocatalytic synthesis reactions possible and improves photocatalytic reaction activity. In this paper, the development history, structures, and performance of g-C3N4 are briefly introduced, and the modification strategies of g-C3N4 are summarized to improve its photocatalytic and photoelectric catalytic properties via doping, heterojunction construction, etc. The light absorption and utilization of the catalysts are also analyzed in terms of light source conditions, and the application of g-C3N4 and its modified materials in photocatalysis and photocatalytic degradation is reviewed. Full article
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26 pages, 5990 KiB  
Article
Efficient Image Processing Technique for Detecting Spatio-Temporal Erosion in Boron Nitride Exposed to Iodine Plasma
by Ahmed S. Afifi, Janith Weerasinghe, Karthika Prasad, Igor Levchenko and Katia Alexander
Nanomaterials 2025, 15(13), 961; https://doi.org/10.3390/nano15130961 - 21 Jun 2025
Viewed by 1214
Abstract
Erosion detection in materials exposed to plasma-generated species, such as those used for space propulsion systems, is critical for ensuring their reliability and longevity. This study introduces an efficient image processing technique to monitor the evolution of the erosion depth in boron nitride [...] Read more.
Erosion detection in materials exposed to plasma-generated species, such as those used for space propulsion systems, is critical for ensuring their reliability and longevity. This study introduces an efficient image processing technique to monitor the evolution of the erosion depth in boron nitride (BN) subjected to multiple cycles of iodine plasma exposure. Utilising atomic force microscopy (AFM) images from both untreated and treated BN samples, the technique uses a modified semi-automated image registration method that accurately aligns surface profiles—even after substantial erosion—and overcomes challenges related to changes in the eroded surface features. The registered images are then processed through frequency-domain subtraction to visualise and quantify erosion depth. Our technique tracks changes across the BN surface at multiple spatial locations and generates erosion maps at exposure durations of 24, 48, 72 and 84 min using both one-stage and multi-stage registration methods. These maps not only reveal localised material loss (up to 5.5 μm after 84 min) and assess its uniformity but also indicate potential re-deposition of etched material and redistribution across the surface through mechanisms such as diffusion. By analysing areas with higher elevations and observing plasma-treated samples over time, we notice that these elevated regions—initially the most affected—gradually decrease in size and height, while overall erosion depth increases. Progressive surface smoothing is observed with increasing iodine plasma exposure, as quantified by AFM-based erosion mapping. Notably, up to 89.3% of surface heights were concentrated near the mean after 72–84 min of plasma treatment, indicating a more even distribution of surface features compared to the untreated surface. Iodine plasma was compared to argon plasma to distinguish material loss during degradation between these two mechanisms. Iodine plasma causes more aggressive and spatially selective erosion, strongly influenced by initial surface morphology, whereas argon plasma results in milder and more uniform surface changes. Additional scale-dependent slope and curvature analyses confirm that iodine rapidly smooths fine features, whereas argon better preserves surface sharpness over time. Tracking such sharpness is critical for maintaining the fine structures essential to the fabrication of modern semiconductor components. Overall, this image processing tool offers a powerful and adaptable method for accurately assessing surface degradation and morphological changes in materials used in plasma-facing and space propulsion environments. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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15 pages, 2784 KiB  
Article
The Effect of Spark Current Tuning on the Formation of Cu Nanoparticles Synthesized by Spark Ablation in Nitrogen Atmosphere
by Maria Assunta Signore, Antonio Della Torre, Antonio Serra, Daniela Manno, Rosaria Rinaldi, Marco Mazzeo, Luca Nunzio Francioso and Luciano Velardi
Crystals 2025, 15(7), 587; https://doi.org/10.3390/cryst15070587 - 21 Jun 2025
Viewed by 425
Abstract
The demand for a “green” approach to the synthesis of nanomaterials is becoming increasingly pressing. In response to this need, we present, for the first time, the use of spark ablation as an environmentally friendly deposition technique to obtain nanoparticles of copper nitride, [...] Read more.
The demand for a “green” approach to the synthesis of nanomaterials is becoming increasingly pressing. In response to this need, we present, for the first time, the use of spark ablation as an environmentally friendly deposition technique to obtain nanoparticles of copper nitride, a material that is gaining increasing attention in the field of photovoltaic advanced technologies. This method involves the ablation of pure copper electrodes in nitrogen atmosphere while a spark current is tuned. The overall result is the co-presence of nitride and oxide nanoparticle agglomerates with different sizes according to the spark current, as confirmed by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and energy-dispersive spectroscopy techniques. Scanning probe microscopy and scanning electron microscopy show an increase in the number and size of nanoparticle agglomerates with an increasing current, while the nanoparticle size is always about sub-10 nm. The findings of this work promote spark ablation as a simple, versatile, cost-effective, environmentally friendly deposition method to obtain nitride-based nanoparticles. Furthermore, it is compatible with many types of materials and substrates, increasing the possible combinations of metals/semiconductors and carrier gas types to obtain completely innovative materials with unique compositions and properties. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
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