Search Results (12)

Thin films of nickel oxide (NiO) were deposited on a 5° miscut magnesium oxide (MgO)(100) substrate using electron-beam evaporation to pursue morphology-directed resistive switching. The atomic force microscope (AFM) confirmed a stepped surface with a terrace width of ~85 nm and a step height of ~7 nm. After deposition, the film resistance decreased from 200 MΩ to 25 MΩ by annealing under ambient air at 400 °C, attributed to the increase in the p-type conductivity through nickel vacancy formation. Top electrodes of Ag (500 nm width, 180 nm gap) were patterned parallel or perpendicular to the substrate steps using UV and electron-beam lithography. Devices aligned parallel to the step showed reproducible unipolar switching with 100% yield between forming voltages 20–70 V and HRS/LRS~10² at ±5 V. In contrast, devices formed perpendicular to the steps (8/8) subsequently failed catastrophically during electroforming, with scanning electron microscopy (SEM) showing breakdown holes on the order of ~100 nm at the step crossings. The anisotropic electrodynamic response is due to step-guided electric field distribution and directional nickel vacancy migration, illustrating how substrate morphology can deterministically influence filament nucleation. These results highlighted stepped MgO as a template to engineer the anisotropic charge transport of NiO, exhibiting a reliable ReRAM as well as directional electrocatalysis for energy applications. Full article

The rough morphology at the growth surface results in the non-uniform distribution of indium composition, intentionally or unintentionally doped impurity, and thus impacts the performance of GaN-based optoelectronic and vertical power electronic devices. We observed the morphologies of unintentionally doped GaN homo-epitaxially grown via MOCVD and identified the relations between rough surfaces and the miscut angle and direction of the substrate. The growth kinetics under the effect of the Ehrlich–Schwoebel barrier were studied, and it was found that asymmetric step motions in samples with a large miscut angle or those grown at high temperature were the causes of step-bunching. Meandering steps were believed to be caused by surface free energy minimization for steps with wide terraces or deviating from the $[1\overline{1}00]$ m-direction. Full article

In this study, carbon-doped semi-insulating N-polar GaN on a sapphire substrate was prepared using a propane precursor. Controlling the deposition rate of N-polar GaN helped to improve the carbon incorporation efficiency, providing a semi-insulating behavior. The material quality and surface roughness of the N-polar GaN improved with modified deposition conditions. C-doping using 1.8 mmol/min of propane gave an abrupt doping profile near the GaN/sapphire interface, which was useful for obtaining semi-insulating N-polar GaN grown on sapphire. This study shows that further development of the deposition process will allow for improved material quality and produce a state-of-the-art N-polar semi-insulating GaN layer. Full article

A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility. Full article

The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of InN was performed to explore the growth parameter space of the horizontal one-dimensional InN quantum wire-like structures on miscut substrates. The InN growth temperature, InN thickness, and NH₃ flow during growth were varied to determine optimal quantum wire segment growth conditions. Quantum wire segment formation was observed through AFM images for N-polar InN samples with a low growth temperature of 540 °C and 1–2 nm of InN. Below 1 nm of InN, quantum dashes formed, and 2-D layers were formed above 2 nm of InN. One-dimensional anisotropy of the electrical conduction of N-polar InN wire-like samples was observed through TLM measurements. The sheet resistances of wire-like samples varied from 10–26 kΩ/□ in the longitudinal direction of the wire segments. The high sheet resistances were attributed to the close proximity of the treading dislocations at the InN/GaN interface and might be lowered by reducing the lattice mismatch of InN wire-like structures with the substrate using high lattice constant base layers such as relaxed InGaN. Full article

Three types of GaAsP metamorphic buffer layers, including linearly graded, step graded, and metamorphic superlattices, were compared for the purposes of virtual substrates for red laser diode heterostructures. Laser diodes were fabricated on GaAs substrates and relaxed GaAsP metamorphic superlattice virtual substrates. A laser diode structure with a tensile-strained quantum well on a standard miscut GaAs substrate achieved TM-polarized emission at a 638 nm wavelength with 45% peak power conversion efficiency (PCE) at a 880 mW continuous wave (CW) output power with T₀ = 77 K and T₁ = 266 K. An analogous laser diode structure with a compressively strained quantum well on the metamorphic superlattice emitted TE-polarized 639 nm light with 35.5% peak PCE at 880 mW CW with T₀ = 90 K and T₁ = 300 K. Full article

Ramie is an important cash crop in China, and ramie fiber is an important raw material for the textile industry. As a shrub plant, the spatial distribution of the ramie plant is different from that of herbaceous crops, and its plant spacing and row spacing are not fixed, which affects the cutting operation during harvest. In order to solve the above problems, this study constructed a ramie spatial distribution model with statistical methods, and built a prediction model of ramie harvesting feeding quantity on this basis. Based on the analysis of the absolute motion trail of the ramie harvester cutting knife, the calculation equation of the missing cutting area was established, and then the prediction model of the mis-cutting rate was obtained. The results of the ramie field harvest showed that the prediction model of the feed quantity and mis-cutting rate was effective. These methods can provide references to the control and optimization of ramie harvester parameters. Full article

Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal quality of the group III-V epitaxial layer plays an extremely vital role. However, there are several challenges for high quality group III-V material growth on Si, such as a large lattice mismatch, highly thermal expansion coefficient difference, and huge dissimilarity between group III-V material and Si, which inevitably leads to the formation of high threading dislocation densities (TDDs) and anti-phase boundaries (APBs). In view of the above-mentioned growth problems, this review details the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-V hetero-epitaxial growth on Si substrates. Based on the previous literature investigation, two main concepts (global growth and selective epitaxial growth (SEG)) were proposed. Besides, we highlight the advanced technologies, such as the miscut substrate, multi-type buffer layer, strain superlattice (SLs), and epitaxial lateral overgrowth (ELO), to decrease the TDDs and APBs. To achieve high performance OEICs, the growth strategy and development trend for group III-V material on Si platform were also emphasized. Full article

Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate. Full article

InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified. Full article

The Markov Random Field (MRF) energy function, constructed by existing OpenMVS-based 3D texture reconstruction algorithms, considers only the image label of the adjacent triangle face for the smoothness term and ignores the planar-structure information of the model. As a result, the generated texture charts results have too many fragments, leading to a serious local miscut and color discontinuity between texture charts. This paper fully utilizes the planar structure information of the mesh model and the visual information of the 3D triangle face on the image and proposes an improved, faster, and high-quality texture chart generation method based on the texture chart generation algorithm of the OpenMVS. This methodology of the proposed approach is as follows: (1) The visual quality on different visual images of each triangle face is scored using the visual information of the triangle face on each image in the mesh model. (2) A fully automatic Variational Shape Approximation (VSA) plane segmentation algorithm is used to segment the blocked 3D mesh models. The proposed fully automatic VSA-based plane segmentation algorithm is suitable for multi-threaded parallel processing, which solves the VSA framework needed to manually set the number of planes and the low computational efficiency in a large scene model. (3) The visual quality of the triangle face on different visual images is used as the data term, and the image label of adjective triangle and result of plane segmentation are utilized as the smoothness term to construct the MRF energy function. (4) An image label is assigned to each triangle by the minimizing energy function. A texture chart is generated by clustering the topologically-adjacent triangle faces with the same image label, and the jagged boundaries of the texture chart are smoothed. Three sets of data of different types were used for quantitative and qualitative evaluation. Compared with the original OpenMVS texture chart generation method, the experiments show that the proposed approach significantly reduces the number of texture charts, significantly improves miscuts and color differences between texture charts, and highly boosts the efficiency of VSA plane segmentation algorithm and OpenMVS texture reconstruction. Full article

This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group. The background to the development of the current device structure on sapphire is described and the reason for using a (0001) sapphire with a miscut angle of 1.0° relative to the m-axis is clarified. Our LEDs incorporate uneven quantum wells (QWs) grown on an AlN template with dense macrosteps. Due to the low threading dislocation density of AlGaN and AlN templates of about 5 × 10⁸/cm², the number of nonradiative recombination centers is decreased. In addition, the uneven QW show high external quantum efficiency (EQE) and wall-plug efficiency, which are considered to be boosted by the increased internal quantum efficiency (IQE) by enhancing carrier localization adjacent to macrosteps. The achieved LED performance is considered to be sufficient for practical applications. The advantage of the uneven QW is discussed in terms of the EQE and IQE. A DUV-LED die with an output of over 100 mW at 280–300 nm is considered feasible by applying techniques including the encapsulation. In addition, the fundamental achievements of various groups are reviewed for the future improvements of AlGaN-based DUV-LEDs. Finally, the applications of DUV-LEDs are described from an industrial viewpoint. The demonstrations of W/cm²-class irradiation modules are shown for UV curing. Full article