Search Results (28)

This study presents a novel dual phase-locked loop two-dimensional synchronized motion modulation (TDSMM-DPLL) system designed to enhance the low-frequency detection capability of magnetoresistive (MR) sensors by effectively mitigating 1/f noise. The TDSMM-DPLL system integrates a comb-driven resonator and a piezoelectric cantilever beam resonator, achieving synchronized magnetic field modulation through a DPLL circuit that adjusts the resonant frequency of the comb-driven resonator to twice that of the cantilever beam resonator. Theoretical analysis and finite element simulations demonstrate a modulation efficiency of 38.98%, which is significantly higher than that of traditional one-dimensional modulation methods. Experimental validation confirms the system’s effectiveness, showing a 3.13-fold reduction in frequency Allan variance, decreasing from 217.32 ppb to 69.46 ppb, indicating substantial noise suppression. These results highlight the TDSMM-DPLL system’s potential to improve the performance of MR sensors in low-frequency applications, making it a promising solution for high-precision magnetic field detection. Full article

The main objective of the work is to investigate the capacity of a single magnetoresistance (MR) element to measure AC electrical currents. An instrumentation system is presented to characterize individually the four active elements of an MR bridge current sensor preserving their internal connections. The system suggests the possibility to sense electrical currents using only one element of the bridge opening the way to design new MR sensors based on this concept. Sensitivity, offset and non-linearity deviation were obtained using bridges of tunnel (TMR)- and giant (GMR)-based MR technologies. The single element embedded in a Wheatstone bridge configuration is used for practical current measurements in a 50 Hz line. An electronic circuitry is proposed to measure alternating (AC) currents with a single MR element, including a lock-in amplifier and an interface to properly convert the signal to its root mean square (rms) value with a resolution of 250 mA peak in the 125 A range. Full article

The main purpose of the paper is to show how a magnetoresistive (MR) element can work as a current sensor instead of using a Wheatstone bridge composed by four MR elements, defining the concept of a magnetoresistive shunt (MR-shunt). This concept is reached by considering that once the MR element is biased at a constant current, the voltage drop between its terminals offers information, by the MR effect, of the current to be measured, as happens in a conventional shunt resistor. However, an MR-shunt has the advantage of being a non-dissipative shunt since the current of interest does not circulate through the material, preventing its self-heating. Moreover, it provides galvanic isolation. First, we propose an electronic circuitry enabling the utilization of the available MR sensors integrated into a Wheatstone bridge as sensing elements (MR-shunt). This circuitry allows independent characterization of each of the four elements of the bridge. An independently implemented MR element is also analyzed. Secondly, we propose an electronic conditioning circuit for the MR-shunt, which allows both the bridge-integrated element and the single element to function as current sensors in a similar way to the sensing bridge. Third, the thermal variation in the sensitivity of the MR-shunt, and its temperature coefficient, are obtained. An electronic interface is proposed and analyzed for thermal drift compensation of the MR-shunt current sensitivity. With this hardware compensation, temperature coefficients are experimentally reduced from 0.348%/°C without compensation to −0.008%/°C with compensation for an element integrated in a sensor bridge and from 0.474%/°C to −0.0007%/°C for the single element. Full article

The results of magnetoresistance (MR) and resistance relaxation of nanostructured La_1−xSr_xMn_yO₃ (LSMO) films with different film thicknesses (60–480 nm) grown on Si/SiO₂ substrate by the pulsed-injection MOCVD technique are presented and compared with the reference manganite LSMO/Al₂O₃ films of the same thickness. The MR was investigated in permanent (up to 0.7 T) and pulsed (up to 10 T) magnetic fields in the temperature range of 80–300 K, and the resistance-relaxation processes were studied after the switch-off of the magnetic pulse with an amplitude of 10 T and a duration of 200 μs. It was found that the high-field MR values were comparable for all investigated films (~−40% at 10 T), whereas the memory effects differed depending on the film thickness and substrate used for the deposition. It was demonstrated that resistance relaxation to the initial state after removal of the magnetic field occurred in two time scales: fast’ (~300 μs) and slow (longer than 10 ms). The observed fast relaxation process was analyzed using the Kolmogorov–Avrami–Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. The smallest remnant resistivity values were found for the LSMO films grown on SiO₂/Si substrate in comparison to the LSMO/Al₂O₃ films. The testing of the LSMO/SiO₂/Si-based magnetic sensors in an alternating magnetic field with a half-period of 22 μs demonstrated that these films could be used for the development of fast magnetic sensors operating at room temperature. For operation at cryogenic temperature, the LSMO/SiO₂/Si films could be employed only for single-pulse measurements due to magnetic-memory effects. Full article

With the merits of high sensitivity, high stability, high flexibility, low cost, and simple manufacturing, flexible magnetic field sensors have potential applications in various fields such as geomagnetosensitive E-Skins, magnetoelectric compass, and non-contact interactive platforms. Based on the principles of various magnetic field sensors, this paper introduces the research progress of flexible magnetic field sensors, including the preparation, performance, related applications, etc. In addition, the prospects of flexible magnetic field sensors and their challenges are presented. Full article

We have investigated the structural, magnetic, and electrical transport properties of Pr_0.7 Sr_0.3 Mn_(1−x)Co_x O₃ nanopowders (x = 0, 0.05, 0.10 and 0.15). The Pechini Sol-gel method was used to synthesize these nanopowders. X-ray diffraction at room temperature shows that all the nano powders have an orthorhombic structure of Pnma space group crystallography. The average crystallite size of samples x = 0, 0.05, 0.10, and 0.15 are 33.78 nm, 29 nm, 33.61 nm, and 24.27 nm, respectively. Semi-quantitative chemical analysis by energy dispersive spectroscopy (EDS) confirms the expected stoichiometry of the sample. Magnetic measurements indicate that all samples show a ferromagnetic (FM) to paramagnetic (PM) transition with increasing temperature. The Curie temperature T_C gradually decreases (300 K, 270 K, 250 K, and 235 K for x = 0, 0.05, 0.10, and 0.15, respectively) with increasing Co concentrations. The M-H curves for all compounds reveal the PM behavior at 300 K, while the FM behavior characterizes the magnetic hysteresis at low temperature (5 K). The electrical resistivity measurements show that all compounds exhibit metallic behavior at low temperature (T < T$\rho$) well fitted by the relation $\rho$ = $\rho$₀ + $\rho$₂T² + $\rho$_4.5T^4.5 and semiconductor behavior above Tρ (T > T$\rho$), for which the electronic transport can be explained by the variable range hopping model and the adiabatic small polaron hopping model. All samples have significant magnetoresistance (MR) values, even at room temperature. This presented research provides an innovative and practical approach to develop materials in several technological areas, such as ultra-high density magnetic recording and magneto resistive sensors. Full article

A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganite film with minimized memory effect, and a magnetic field recording module. The memory effect of the La_1−xSr_x(Mn_1−yCo_y)_zO₃ manganite films doped with different amounts of Co and Mn was investigated by measuring the magnetoresistance (MR) and resistance relaxation in pulsed magnetic fields up to 20 T in the temperature range of 80–365 K. It was found that for low-temperature applications, films doped with Co (LSMCO) are preferable due to the minimized magnetic memory effect at these temperatures, compared with LSMO films without Co. For applications at temperatures higher than room temperature, nanostructured manganite LSMO films with increased Mn content above the stoichiometric level have to be used. These films do not exhibit magnetic memory effects and have higher MR values. To avoid parasitic signal due to electromotive forces appearing in the transmission line of the sensor during measurement of short-pulsed magnetic fields, a bipolar-pulsed voltage supply for the sensor was used. For signal recording, a measurement module consisting of a pulsed voltage generator with a frequency up to 12.5 MHz, a 16-bit ADC with a sampling rate of 25 MHz, and a microprocessor was proposed. The circuit of the measurement module was shielded against low- and high-frequency electromagnetic noise, and the recorded signal was transmitted to a personal computer using a fiber optic link. The system was tested using magnetic field generators, generating magnetic fields with pulse durations ranging from 3 to 20 μs. The developed magnetic field measurement system can be used for the measurement of high-pulsed magnetic fields with pulse durations in the order of microseconds in different fields of science and industry. Full article

The concept of microgrids has emerged as an effective way to integrate distributed energy resources (DERs) into distribution networks. The presence of DERs in microgrids leads to challenges in the formulation of protection for microgrids. Protection problems arise in a microgrid due to varying fault current levels in different operating scenarios. In order to overcome the practical challenges arising from varying fault current levels leading to short-circuit faults in microgrids, this paper proposes a MagnetoResistive (MR) sensors-based protection scheme, with fault localization through SuperimposedReactiveEnergy (SRE). The process is initiated by employing highly sensitive non-intrusive magnetic sensors to detect the magnetic field at each end of the distribution line. The magnetic field is then used to calculate the total harmonic distortion and thus detect faults in microgrids. After detection of faults, the proposed scheme uses SRE to identify faulty zones in microgrids. Finally, SI components of the current are extracted for fault classification. Extensive simulations on the International Electro-technical Commission (IEC) microgrid are performed in MATLAB/Simulink to validate the efficacy of the proposed scheme. Simulation results show that the proposed scheme can effectively detect, classify and isolate different faults in microgrids, while operating under various modes with varying fault locations and resistances, with the efficiency of approximately 97–98%. Full article

Neural probes, as an invasive physiological tool at the mesoscopic scale, can decipher the code of brain connections and communications from the cellular or even molecular level, and realize information fusion between the human body and external machines. In addition to traditional electrodes, two new types of neural probes have been developed in recent years: optoprobes based on optogenetics and magnetrodes that record neural magnetic signals. In this review, we give a comprehensive overview of these three kinds of neural probes. We firstly discuss the development of microelectrodes and strategies for their flexibility, which is mainly represented by the selection of flexible substrates and new electrode materials. Subsequently, the concept of optogenetics is introduced, followed by the review of several novel structures of optoprobes, which are divided into multifunctional optoprobes integrated with microfluidic channels, artifact-free optoprobes, three-dimensional drivable optoprobes, and flexible optoprobes. At last, we introduce the fundamental perspectives of magnetoresistive (MR) sensors and then review the research progress of magnetrodes based on it. Full article

The combination of magnetoresistive (MR) element and magnetic flux concentrators (MFCs) offers highly sensitive magnetic field sensors. To maximize the effect of MFC, the geometrical design between the MR element and MFCs is critical. In this paper, we present simulation and experimental studies on the effect of the geometrical relationship between current-in-plane giant magnetoresistive (GMR) element and MFCs made of a NiFeCuMo film. Finite element method (FEM) simulations showed that although an overlap between the MFCs and GMR element enhances their magneto-static coupling, it can lead to a loss of magnetoresistance ratio due to a magnetic shielding effect by the MFCs. Therefore, we propose a comb-shaped GMR element with alternate notches and fins. The FEM simulations showed that the fins of the comb-shaped GMR element provide a strong magneto-static coupling with the MFCs, whereas the electric current is confined within the main body of the comb-shaped GMR element, resulting in improved sensitivity. We experimentally demonstrated a higher sensitivity of the comb-shaped GMR sensor (36.5 %/mT) than that of a conventional rectangular GMR sensor (28 %/mT). Full article

The results of colossal magnetoresistance (CMR) properties of La_1-xSr_xMn_yO₃ (LSMO) films grown by the pulsed injection MOCVD technique onto an Al₂O₃ substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal–insulator transition typical for manganites at a certain temperature, T_m. The T_m vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the T_m value obtained. The highest T_m values (270 K) were observed for nanostructured LSMO films with x = 0.17–0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm³), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature. Full article

The results of colossal magnetoresistance (CMR) properties of La_0.83Sr_0.17Mn_1.21O₃ (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al₂O₃, and amorphous Si/SiO₂ substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures. Full article

Current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) read sensors based on Heusler alloys are promising candidates for ultrahigh areal densities of magnetic data storage technology. In particular, the thickness of reader structures is one of the key factors for the development of practical CPP-GMR sensors. In this research, we studied the dependence of the free layer thickness on the stability of the Co₂(Mn_0.6Fe_0.4)Ge Heusler-based CPP-GMR read head for an areal density of 1 Tb/in², aiming to determine the appropriate layer thickness. The evaluations were done through simulations based on micromagnetic modelling. The reader stability indicators, including the magnetoresistance (MR) ratio, readback signal, dibit response asymmetry parameter, and power spectral density profile, were characterized and discussed. Our analysis demonstrates that the reader with a free layer thickness of 3 nm indicates the best stability performance for this particular head. A reasonably large MR ratio of 26% was obtained by the reader having this suitable layer thickness. The findings can be utilized to improve the design of the CPP-GMR reader for use in ultrahigh magnetic recording densities. Full article

Magnetoresistance (MR) is the variation of a material’s resistivity under the presence of external magnetic fields. Reading heads in hard disk drives (HDDs) are the most common applications of MR sensors. Since the discovery of giant magnetoresistance (GMR) in the 1980s and the application of GMR reading heads in the 1990s, the MR sensors lead to the rapid developments of the HDDs’ storage capacity. Nowadays, MR sensors are employed in magnetic storage, position sensing, current sensing, non-destructive monitoring, and biomedical sensing systems. MR sensors are used to transfer the variation of the target magnetic fields to other signals such as resistance change. This review illustrates the progress of developing nanoconstructed MR materials/structures. Meanwhile, it offers an overview of current trends regarding the applications of MR sensors. In addition, the challenges in designing/developing MR sensors with enhanced performance and cost-efficiency are discussed in this review. Full article

Recent advances in the fabrication and classification of amorphous carbon (a-Carbon) thin films play an active part in the field of surface materials science. In this paper, a pulsed laser deposition (PLD) technique through controlling experimental parameters, including deposition time/temperature and laser energy/frequency, has been employed to examine the substrate effect of amorphous carbon thin film fabrication over SiO₂ and glass substrates. In this paper, we have examined the structural and magnetoresistance (MR) properties of these thin films. The intensity ratio of the G-band and D-band (I_D/I_G) were 1.1 and 2.4, where the C(sp²) atomic ratio for the thin films samples that were prepared on glass and SiO₂ substrates, were observed as 65% and 85%, respectively. The MR properties were examined under a magnetic field ranging from −9 T to 9 T within a 2-K to 40-K temperature range. A positive MR value of 15% was examined at a low temperature of 2 K for the thin films grown on SiO₂ substrate at a growth temperature of 400 °C using a 300 mJ/pulse laser frequency. The structural changes may tune the magnetoresistance properties of these a-Carbon materials. These results were demonstrated to be highly promising for carbon-based spintronics and magnetic sensors. Full article