Search Results (159)

Spin transport behaviors in heavy metal/ferromagnetic insulator (HM/FI) bilayers have attracted considerable attention due to various novel phenomena and applications in spintronic devices. Herein, we investigate the planar Hall effect (PHE) in Pt/Tm₃Fe₅O₁₂ (Pt/TmIG) heterostructures at low temperatures; moment switching in the ferrimagnetic insulator TmIG is detected by using electrical measurements. Double switching hysteresis PHE curves are found in Pt/TmIG bilayers, closely related to the magnetic moment of Tm³⁺ ions, which makes a key contribution to the total magnetic moment of TmIG film at low temperature. More importantly, a magnetoresistance (MR) curve with double switching is found, which has not been reported in this simple HM/FI bilayer, and the sign of this MR effect is sensitive to the angle between the magnetic field and current directions. Our findings of these effects in this HM/rare earth iron garnet (HM/REIG) bilayer provide insights into tuning the spin transport properties of HM/REIG by changing the rare earth. Full article

Recent achievements in ultrafast spin physics have enabled the use of heterostructures composed of ferromagnetic (FM)/non-magnetic (NM) thin layers for terahertz (THz) generation. The mechanism of THz emission from FM/NM multilayers has been typically ascribed to the inverse spin Hall effect (ISHE). In this work, we probe the mechanism of the ISHE by inserting a second ferromagnetic layer in the form of an alloy between the FM/NM system. In particular, by utilizing the co-sputtering technique, we fabricate Fe/L1₀-FePt/Pt ultra-thin heterostructures. We successfully grow the tetragonal phase of FePt (L1₀-phase) as revealed by X-ray diffraction and reflection techniques. We show the strong magnetic coupling between Fe and L1₀-FePt using magneto-optical and Superconducting Quantum Interference Device (SQUID) magnetometry. Subsequently, by utilizing THz time domain spectroscopy technique, we record the THz emission and thus we the reveal the efficiency of spin-to-charge conversion in Fe/L1₀-FePt/Pt. We establish that Fe/L1₀-FePt/Pt configuration is significantly superior to the Fe/Pt bilayer structure, regarding THz emission amplitude. The unique trilayer structure opens new perspectives in terms of material choices for the future spintronic THz sources. Full article

The widespread contamination of aquatic environments by tetracycline antibiotics (TCs) poses a substantial threat to public health and ecosystem stability. Although photo-Fenton processes have demonstrated remarkable efficacy in degrading TCs, their practical application is limited by challenges associated with catalyst recyclability. This study reports the development of a novel magnetic recoverable SrFe₁₂O₁₉/g-C₃N₄ heterostructure photocatalyst synthesized via a facile one-step co-calcination method using industrial-grade precursors. Comprehensive characterization revealed that nitrogen defects and the formation of heterojunction structures significantly suppress electron (e⁻)–hole (h⁺) pair recombination, thereby markedly enhancing catalytic activity. The optimized 7-SFO/CN composite removes over 90% of oxytetracycline (OTC) within 60 min, achieving degradation rate constants of 0.0393 min⁻¹, which are 9.1 times higher than those of SrFe₁₂O₁₉ (0.0043 min⁻¹) and 4.2 times higher than those of g-C₃N₄ (0.0094 min⁻¹). The effectively separated e⁻ play three critical roles: (i) directly activating H₂O₂ to generate ·OH radicals, (ii) promoting the redox cycling of Fe²⁺/Fe³⁺ ions, and (iii) reducing dissolved oxygen to form ·O₂⁻ species. Concurrently, h⁺ directly oxidize OTC molecules through surface-mediated reactions. Furthermore, the 7-SFO/CN composite exhibits exceptional operational stability and applicability, offering a transformative approach for scalable photocatalytic water treatment systems. This work provides an effective strategy for designing efficient and recoverable photocatalysts for environmental remediation. Full article

Electrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively manipulate many-body correlated states. Exploring their interplay and interdependence is crucial but remains underexplored. This review integratively cross-examines the atomic and electronic structures and transport properties of van der Waals-layered crystals ZrTe₃, 2H-TaS₂, and Cr₂Si₂Te₆, providing a comprehensive understanding and uncovering new discoveries and insights. A common observation from these crystals is that modifying the atomic and electronic interface structures of 2D van der Waals interfaces using heteroatoms significantly influences the emergence and stability of coherent phases, as well as phase-sensitive transport responses. In ZrTe₃, substitution and intercalation with Se, Hf, Cu, or Ni at the 2D vdW interface alter phonon–electron coupling, valence states, and the quasi-1D interface Fermi band, affecting the onset of CDW and SC, manifested as resistance upturns and zero-resistance states. We conclude here that these phenomena originate from dopant-induced variations in the lattice spacing of the quasi-1D Te chains of the 2D vdW interface, and propose an unconventional superconducting mechanism driven by valence fluctuations at the van Hove singularity, arising from quasi-1D lattice vibrations. Short-range in-plane electronic heterostructures at the vdW interface of Cr₂Si₂Te₆ result in a narrowed band gap. The sharp increase in in-plane resistance is found to be linked to the emergence and development of out-of-plane ferromagnetism. The insertion of 2D magnetic layers such as Mn, Fe, and Co into the vdW gap of 2H-TaS₂ induces anisotropic magnetism and associated transport responses to magnetic transitions. Overall, 2D vdW interface modification offers control over collective electronic behavior, transport properties, and their interplays, advancing fundamental science and nanoelectronic devices. Full article

This study introduces a method aimed at enhancing both the accuracy and the range of magnetic field sensors, which are two critical parameters, in a novel NiCo₂O₄-based anomalous Hall effect sensor. To fine-tune the linear range of the sensor, we introduced epitaxial strain using a MgAl₂O₄ cover layer, which significantly influenced the strain-modulated magnetic anisotropy. A NiCo₂O₄/MgAl₂O₄/NiCo₂O₄/MgAl₂O₄ heterostructure was further constructed, achieving differentiation in the material characteristics across both upper and lower NiCo₂O₄ layers through the modulation of thickness and strain. A dual-layer Hall bar was designed to enhance the integration of the sensor, offering varied detection ranges. This approach enabled the realization of ultrahigh sensitivity, measuring 10,000 V/(AT) within a ±0.1 mT range, and a competitive sensitivity of 60 V/(AT) within a ±5 mT range. By reducing the thickness of the top NiCo₂O₄ layer, an ultra-wide measurement range of ±1000 mT was also achieved. These results highlight the considerable promise of NiCo₂O₄-based anomalous Hall effect devices as compact, multi-range tools in the domain of magnetic sensing technology. Full article

WO₃ electrochromic films have emerged as potential candidates for smart windows due to their cost-effectiveness, fast switching speed, and strong chemical stability. However, the inherent contradiction between the high coloring efficiency of amorphous WO₃ and the cycling durability of crystalline WO₃ remains a critical challenge in practical applications. This study proposes an innovative heterostructure engineering strategy, achieving precise control of the amorphous/crystalline bilayer WO₃ heterointerface (148 nm a-WO₃/115 nm c-WO₃) for the first time through phase boundary regulation, using well-controlled magnetron sputtering and post-deposition thermal annealing processes. Multimodal characterization using XRD, XPS, and SEM indicates that the heterointerface optimizes performance through a dynamic charge transfer mechanism and structural synergistic effects: the optimized bilayer structure achieves 76.57% optical modulation (at 630 nm) under −1.0 V and maintains a ΔT retention rate of 45.02% after 600 cycles, significantly outperforming single amorphous (8.34%) and crystalline films (14.34%). XPS analysis reveals a dynamic equilibrium mechanism involving W⁵⁺/Li⁺ at the interface, and the Li⁺ diffusion coefficient (D₀ = 4.29 × 10⁻¹⁰ cm²/s) confirms that the amorphous layer dominates rapid ion transport, while the crystalline matrix enhances structural stability through its ordered crystalline structure. This study offers a new paradigm for balancing the efficiency and longevity of electrochromic devices, with the compatibility of magnetic sputtering promoting the industrialization process of large-area smart windows. Full article

The demand for computing power has been growing exponentially with the rise of artificial intelligence (AI), machine learning, and the Internet of Things (IoT). This growth requires unconventional computing primitives that prioritize energy efficiency, while also addressing the critical need for scalability. Neuromorphic computing, inspired by the biological brain, offers a transformative paradigm for addressing these challenges. This review paper provides an overview of advancements in 2D spintronics and device architectures designed for neuromorphic applications, with a focus on techniques such as spin-orbit torque, magnetic tunnel junctions, and skyrmions. Emerging van der Waals materials like CrI₃, Fe₃GaTe₂, and graphene-based heterostructures have demonstrated unparalleled potential for integrating memory and logic at the atomic scale. This work highlights technologies with ultra-low energy consumption (0.14 fJ/operation), high switching speeds (sub-nanosecond), and scalability to sub-20 nm footprints. It covers key material innovations and the role of spintronic effects in enabling compact, energy-efficient neuromorphic systems, providing a foundation for advancing scalable, next-generation computing architectures. Full article

Artificial heterostructures are typically created by layering distinct materials, thereby giving rise to unique characteristics different from their individual components. Herein, two-dimensional α-MnSe nanosheets with a non-layered structure were fabricated on Ga_0.6Fe_1.4O₃ (GFO) films. The superior crystalline properties of MnSe/GFO heterostructures were confirmed through structural and morphological analyses. The remanent polarization is around 1.5 μC/cm² and the leakage current density can reach 2 × 10⁻³ A/cm² under 4 V. In addition, the piezo-response force microscopy amplitude and phase images further supported the ferroelectric property. The significant improvement of coercive field and saturated magnetization, along with the antiparallel signals of Mn and Fe ions observed through synchrotron X-ray analyses, suggest the presence of magnetic interaction within the MnSe/GFO heterostructure. Finally, the excellent photodetector with a photo detectivity of 6.3 × 10⁸ Jones and a photoresponsivity of 2.8 × 10⁻³ A·W⁻¹ was obtained under 532 nm in the MnSe/GFO heterostructure. The characteristics of this heterostructure, which include multiferroic, magnetic exchange bias effect, and photodetection capabilities, are highly beneficial for multifunctional devices. Full article

Magnetizing the surface states of topological insulators without damaging their topological features is a crucial step for realizing the quantum anomalous Hall (QAH) effect and remains a challenging task. The TI–ferromagnetic material interface system was constructed and studied by the density functional theory (DFT). A two-dimensional magnetic semiconductor CrWI₆ has been proven to effectively magnetize topological surface states (TSSs) via the magnetic proximity effect. The non-trivial phase was identified in the Bi₂Se₃ (BS) films with six quantum layers (QL) within the CrWI₆/BS/CrWI₆ heterostructure. BS thin films exhibit the generation of spin splitting near the TSSs, and a band gap of approximately 2.9 meV is observed at the Γ in the Brillouin zone; by adjusting the interface distance of the heterostructure, we increased the non-trivial band gap to 7.9 meV, indicating that applying external pressure is conducive to realizing the QAH effect. Furthermore, the topological non-triviality of CrWI₆/6QL-BS/CrWI₆ is confirmed by the nonzero Chern number. This study furnishes a valuable guideline for the implementation of the QAH effect at elevated temperatures within heterostructures comprising two-dimensional (2D) magnetic monolayers (MLs) and topological insulators. Full article

In this study, we investigate the electrically and magnetically tunable Goos–Hänchen (GH) shift of a reflected light beam at terahertz frequencies. Our study focuses on a photonic crystal heterostructure incorporating a monolayer anisotropic graphene. We observe a tunable and enhanced GH shift facilitated by a drastic change in the reflected phase at the resonance angle owing to the excitation of the topological edge state. Considering the quantum response of graphene, we demonstrate the ability to switch positive and negative GH shifts through the manipulation of graphene’s conductivity properties. Moreover, we show that the GH shift can be actively tuned by the external electric field and magnetic field, as well as by controlling the structural parameters of the system. We believe that this tunable and enhanced GH shift scheme offers excellent potential for preparing terahertz shift devices. Full article

Transition metal dichalcogenide (TMD) monolayers exhibit unique valleytronics properties due to the dependency of the coupled valley and spin state at the hexagonal corner of the first Brillouin zone. Precisely controlling valley spin-polarization via manipulating the electron population enables its application in valley-based memory or quantum technologies. This study uncovered the uncompensated spins of the antiferromagnetic nickel oxide (NiO) serving as the ferromagnetic (FM) order to induce valley spin-polarization in molybdenum disulfide (MoS₂) monolayers via the magnetic proximity effect (MPE). Spin-resolved photoluminescence spectroscopy (SR-PL) was employed to observe MoS₂, where the spin-polarized trions appear to be responsible for the MPE, leading to a valley magnetism. Results indicate that local FM order from the uncompensated surface of NiO could successfully induce significant valley spin-polarization in MoS₂ with the depolarization temperature approximately at 100 K, which is relatively high compared to the related literature. This study reveals new perspectives in that the precise control over the surface orientation of AFMs serves as a crystallographic switch to activate the MPE and the magnetic sustainability of the trion state is responsible for the observed valley spin-polarization with the increasing temperature, which promotes the potential of AFM materials in the field of exchange-coupled Van der Waals heterostructures. Full article

The interfacial perpendicular magnetic anisotropy (PMA) observed at ferromagnet/oxide interfaces presents great promise for energy-efficient spintronic technologies. The epitaxial strain induced by the lattice mismatch between films and substrates serves as an effective strategy for the tuning of the material properties. However, the current understanding of the strain effects on interfacial PMA remains insufficient. Here, we present an extensive study of the biaxial strain effects on the interfacial magnetism and interfacial magnetic anisotropy constant ($K_i$) in a slab-based Fe/MgO heterostructure using first-principles density functional theory calculations. Our results reveal a strong correlation between the spin moment of interfacial Fe atoms and the Fe-O bond length in both unstrained and strained systems. The overall $K_i$, which includes contributions from both the Fe/MgO interface and the Fe surface, increases as the compressive strain increases. This is consistent with recent experimental findings that show that the PMA energy increases when the in-plane lattice constant of Fe decreases. In contrast, the overall $K_i$ initially decreases with a small tensile strain of less than 0.4% and shows an increasing trend as the tensile strain increases from 0.4% to 2%. However, beyond 2%, the overall $K_i$ decreases again. These changes in $K_i$ can be explained by the strain-induced variations of Fe 3d orbitals near the Fermi energy. This study provides a comprehensive understanding of the strain effects on magnetic anisotropy in Fe-based heterostructures, offering insights for the further optimization of interfacial magnetic properties. Full article

Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices. Full article

Molecular beam epitaxy (MBE) is a powerful tool in modern technologies, including electronic, optoelectronic, spintronic, and sensoric applications. The primary factor determining epitaxial heterostructure properties is the growth mode and the resulting atomic structure and microstructure. In this paper, we present a novel method for growing epitaxial layers and nanostructures with specific and optimized structural and magnetic properties by assisting the MBE process using electromagnetic and mechanical external stimuli: an electric field (EF), a magnetic field (MF), and a strain field (SF). The transmission of the external fields to the sample is realized using a system of specialized sample holders, advanced transfers, and dedicated manipulators. Examples of applications include the influence of MFs on the growth and anisotropy of epitaxial magnetite and iron films, the use of EFs for in situ resistivity measurements, the realization of in situ magneto-optic measurements, and the application of SFs to the structural modification of metal films on mica. Full article

The hexagonal ferrite h-YbFeO₃ grown on YSZ(111) by pulsed laser deposition is foreseen as a promising single multiferroic candidate where ferroelectricity and antiferromagnetism coexist for future applications at low temperatures. We studied in detail the microstructure as well as the temperature dependence of the magnetic properties of the devices by comparing the heterostructures grown directly on YSZ(111) (i.e., YbPt_Th0nm) with h-YbFeO₃ films deposited on substrates buffered with platinum Pt/YSZ(111) and in dependence on the Pt underlayer film thickness (i.e., YbPt_Th10nm, YbPt_Th40nm, YbPt_Th55nm, and YbPt_Th70nm). The goal was to deeply understand the importance of the crystal quality and morphology of the Pt underlayer for the h-YbFeO₃ layer crystal quality, surface morphology, and the resulting physical properties. We demonstrate the relevance of homogeneity, continuity, and hillock formation of the Pt layer for the h-YbFeO₃ microstructure in terms of crystal structure, mosaicity, grain boundaries, and defect distribution. The findings of transmission electron microscopy and X-ray diffraction reciprocal space mapping characterization enable us to conclude that an optimum film thickness for the Pt bottom electrode is Th_Pt = 70 nm, which improves the crystal quality of h-YbFeO₃ films grown on Pt-buffered YSZ(111) in comparison with h-YbFeO₃ films grown on YSZ(111) (i.e., YbPt_Th0nm). The latter shows a disturbance in the crystal structure, in the up-and-down atomic arrangement of the ferroelectric domains, as well as in the Yb–Fe exchange interactions. Therefore, an enhancement in the remanent and in the total magnetization was obtained at low temperatures below 50 K for h-YbFeO₃ films deposited on Pt-buffered substrates Pt/YSZ(111) when the Pt underlayer reached Th_Pt = 70 nm. Full article