Search Results (117)

The slurry aluminizing process is widely employed to enhance the oxidation and corrosion resistance of nickel-based superalloys used in high-temperature environments such as gas turbines and aerospace engines. This study investigates the effects of the concentration of Al vapors in the reactor chamber and the initial slurry layer thickness on the microstructure, chemical composition, and phase composition of aluminide coatings. Coatings were manufactured on Ni-based superalloy substrates using CrAl powders as an aluminum source and chloride- and fluoride-based activator salts. The effect of the initial thickness of the slurry layer was studied by varying the amount of deposited slurry in terms of mg_slurry/cm²_sample (with constant mg_slurry/cm³_chamber). The microstructure and phase composition of the produced aluminide coatings were evaluated by SEM, EDS, and XRD analysis. Slurry thickness can affect concentration gradients during diffusion, and the best results were obtained with an initial slurry amount of 100 mg_slurry/cm²_sample. The effect of the Al vapor phase in the reaction chamber was then investigated by varying the mg_slurry/cm³_chamber ratio while keeping the slurry layer thickness constant at 100 mg_slurry/cm²_sample. This parameter influences the amount of Al at the substrate surface before the onset of solid-state diffusion, and the best results were obtained for a 6.50 mg_slurry/cm³_chamber ratio with the formation of 80 µm coatings (excluding the interdiffusion zone) with a β-NiAl phase throughout the thickness. To validate process flexibility, the same parameters were successfully applied to produce platinum-modified aluminides with a bi-phasic ζ-PtAl2 and β-(Ni,Pt)Al microstructure. Full article

Graphene oxide (GO) films have attracted significant attention due to their potential in separation and filtration applications. Based on their unique lamellar structure and ultrathin nature, GO films are difficult to maintain in a free-standing form and typically require substrate support. Consequently, understanding their film formation behavior and mechanisms on substrates is of paramount importance. This work employs commonly used nonwoven fibrous membranes as substrates and guided by the coffee-ring theory, systematically investigates the film formation behaviors, film morphology, and underlying mechanisms of GO films on fibrous membranes with varying wettability. Fibrous membranes with different wetting properties—hydrophilic, hydrophobic, and superhydrophobic—were prepared via electrospinning and initiated chemical vapor deposition (iCVD) surface modification techniques. The spreading behaviors, deposition dynamics, capillary effects, and evaporation-induced film formation mechanisms of GO suspensions on these substrates were thoroughly examined. The results showed that GO formed belt-like, ring-like, and circular patterns on the three fibrous membranes, respectively. GO films encapsulated more than the upper half, approximately the upper half, and the top portion of fibers, respectively. Pronounced wrinkling of GO films was observed except for those on the hydrophilic fibrous membrane. This work demonstrates that tuning the wettability of fibrous substrates enables precise control over GO film morphology, including fiber encapsulation, wrinkling, and coverage area. Furthermore, it deepens the understanding of the interactions between 1D nanofibers and 2D GO sheets at low-dimensional scales, laying a foundational basis for the optimized design of membrane engineering. Full article

Extensive research has been conducted on the catalytic properties of molybdenum disulfide (MoS₂) materials in the context of the hydrogen evolution reaction (HER). This study focuses on exploring hybrid MoS₂/Au structures as a catalyst for HER, utilizing linear sweep voltammetry as the experimental methodology. Firstly, 2D-MoS₂ flakes were synthesized by the chemical vapor deposition (CVD) approach and directly added to gold nanoparticles during or after their preparation process. The prepared nanocomposites were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy with energy-dispersive X-ray analysis (SEM/EDX). The HER performance was tested for the two resulting samples to show that the preparation of gold nanoparticles with the coexistence of CVD-MoS₂ flakes produces a superior electrocatalytic performance of the sample in a neutral medium. Notably, the onset potential was measured as −0.152 V (versus reversible hydrogen electrode (RHE)) with an exchange current density (j₀) of 0.22 mA/cm². Chronoamperometric data show that all composites retained initial current densities for 15 hours, confirming stable, efficient HER performance post-decay. Full article

This study explored advancements in photovoltaic technologies by enhancing the electronic quality of multicrystalline silicon (mc-Si) through silicon nitride (SiN_x) and hydrogen (H₂) plasma deposition via plasma-enhanced chemical vapor deposition (PECVD). This innovative approach replaced toxic chemical wet processes with H₂ plasma and SiN_x. The key parameters of silicon solar cells, including the effective lifetime (τ_eff), diffusion length (L_diff), and iron concentration ([Fe]), were analyzed before and after this sustainable solution. The results show significant improvements, particularly in the edge region, which initially exhibited a low τ_eff and a high iron concentration. After the treatment, the τ_eff and L_diff increased to 7 μs and 210 μm, respectively, compared to 2 μs and 70 μm for the untreated mc-Si. Additionally, the [Fe] decreased significantly after the process, dropping from 60 ppt to 10 ppt in most regions. Furthermore, the treatment led to a significant decrease in reflectivity, from 25% to 8% at a wavelength of 500 nm. These findings highlight the effectiveness of the PECVD-SiN_x and H₂ plasma treatments for improving the optoelectronic performance of mc-Si, making them promising options for high-efficiency photovoltaic devices. Full article

This study employs ab initio metadynamics to simulate the carbonization of Si(001) surfaces with chemical vapor deposition at a temperature of 1423 K. We reveal the complete reaction mechanism, including the beginning of silicon carbide crystal formation. The existence of surficial native oxide is incorporated into the theoretical model. The mechanism determination includes clarification of all intermediate products and transition states. The free-energy surface of the reaction chain has been found. Carbonization initiates with alkylated surface products and continues with consecutive dehydrogenation steps. Carbon is integrated in the volume, near the crystal surface, only if no covalent interactions with hydrogen atoms remain. The native oxide was not found to prohibit the process of carbonization. The oxygen atoms have certain surface mobility at high temperatures. It was revealed that hypervalency of carbon atoms is possible in transition state structures. The theoretical activation free energy of the rate-determining step was found to be only 166 kJ/mol. This work sheds light on the advantage of the practical use of Si(001) substrates for the synthesis of silicon carbide and Si-O-C glasses using direct carbonization via chemical vapor deposition. We also aim to enable more methodical designs of future synthetic routes and better-informed decisions for experimental investigations. Full article

With the wide application of the gallium nitride (GaN) preparation method based on Metal–Organic Chemical Vapor Deposition (MOCVD), the automation of MOCVD equipment has become a research hotspot. This paper explores the automation scheme of MOCVD reaction chamber cleaning to improve productivity and reduce labor costs. Firstly, this paper establishes the kinematic solution model of a MOCVD cleaning robot and designs the cleaning robot path planning control algorithm. Considering the error between the initial position of the robot end-effector and the desired initial position in practical applications, this paper further designs a fault-tolerant motion planning algorithm for the initial position error. The simulation results show that the method can effectively reduce the initial position error and make it converge exponentially to zero. Finally, this paper builds the robot control system of the cleaning system and verifies the cleaning effect through tests. The test results show that the system can meet the actual use requirements and realize the reaction chamber cleaning automation goal. Full article

To improve the friction performance and service life of protective coatings in humidity-fluctuating environments, porous hard titanium nitride (TiN)–molybdenum disulfide (MoS₂) composite coatings were prepared by using direct current magnetron sputtering (DCMS) with the mode of oblique angle deposition (OAD) and chemical vapor deposition (CVD) technologies. The structure and chemical component were characterized by field emission scanning electron microscopy (FESEM), energy dispersive spectrometer (EDS), grazing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The tribological properties of these TiN–MoS₂ composite coatings were investigated. The results indicate that the porous TiN–MoS₂ composite coating exhibited outstanding friction performance and long service life under humidity-fluctuating environments. At the initial 20% relative humidity (RH) stage, the MoS₂ on the porous TiN–MoS₂ composite coating surface worked as an effective lubricant; thus, the coating demonstrated excellent lubrication performance, and the friction coefficient (COF) was about 0.05. As the humidity was alternated to 70% RH, the lubrication effect diminished due to the production of molybdenum oxide (MoO₃), and the COF was about 0.2, which was attributed to the degradation of MoS₂ on the wear track and the release of fresh MoS₂ from the porous TiN matrix. After the environmental conditions shifted from 70% to 20% RH, the MoO₃ was removed, and the lubrication effect was restored. In summary, TiN–MoS₂ porous composite coating offers a promising approach for lubrication in humidity-fluctuating environments. Full article

Metered dose inhalers (MDIs) play a crucial role in managing respiratory diseases, but their effectiveness depends on whether the intended dose is delivered to the target, which can be influenced by various factors. Accurate assessment of MDI performance is crucial for optimizing MDI delivery and ensuring drug efficacy. This study numerically examined the role of evaporation dynamics and dosimetry methods in assessing the efficiency of MDI delivery to different regions in a mouth–lung model extending to the eleventh generation (G11) of lung bifurcations. The experimentally determined spray exit speed, applied dose, and droplet size distribution were implemented as the initial/boundary conditions. Large eddy simulations (LES) were used to resolve the transient inhalation flows, and a chemical species model was applied to simulate vapor and temperature variations in the airflow. A multi-component model was used to consider the heat and mass transfer between the droplets and the airflow. The model was validated against literature data and applied to evaluate the impact of evaporation on pulmonary drug delivery using MDI, in comparison to inert particles. Three methods were used to quantify deposition, which were based on the droplet count, the droplet mass, and the drug carried by the droplets. The results demonstrate that evaporation notably alters the spray droplet size distribution and subsequent deposition patterns. Compared to inert particles, evaporation led to significantly more droplets ranging from 1–5 µm entering the pulmonary region. For a given region, large discrepancies were observed in the deposition fraction (DF) using different dosimetry methods. In the lower lung, the count-based DF (33.9%) and mass-based DF (2.4%) differed by more than one order of magnitude, while the drug-based DF fell between them (20.5%). This large difference highlights the need to include evaporation in predictive dosimetry, as well as to use the appropriate method to quantify the delivery efficiency of evaporating droplets. Full article

AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of Al_xGa_1−xN films with high Al fractions (60–87%) grown on sapphire substrates, including AlN nucleation and buffer layers, by metal–organic chemical vapor deposition (MOCVD). They were initially investigated by high-resolution X-ray diffraction (HR-XRD) and Raman scattering (RS). A set of formulas was deduced to precisely determine x(Al) from HR-XRD data. Screw dislocation densities in AlGaN and AlN layers were deduced. DUV (266 nm) excitation RS clearly exhibits AlGaN Raman features far superior to visible RS. The simulation on the AlGaN longitudinal optical (LO) phonon modes determined the carrier concentrations in the AlGaN layers. The spatial correlation model (SCM) analyses on E₂(high) modes examined the AlGaN and AlN layer properties. These high-x(Al) Al_xGa_1−xN films possess large energy gaps E_g in the range of 5.0–5.6 eV and are excited by a DUV 213 nm (5.8 eV) laser for room temperature (RT) photoluminescence (PL) and temperature-dependent photoluminescence (TDPL) studies. The obtained RTPL bands were deconvoluted with two Gaussian bands, indicating cross-bandgap emission, phonon replicas, and variation with x(Al). TDPL spectra at 20–300 K of Al_0.87Ga_0.13N exhibit the T-dependences of the band-edge luminescence near 5.6 eV and the phonon replicas. According to the Arrhenius fitting diagram of the TDPL spectra, the activation energy (19.6 meV) associated with the luminescence process is acquired. In addition, the combined PL and time-resolved photoluminescence (TRPL) spectroscopic system with DUV 213 nm pulse excitation was applied to measure a typical AlGaN multiple-quantum well (MQW). The RT TRPL decay spectra were obtained at four wavelengths and fitted by two exponentials with fast and slow decay times of ~0.2 ns and 1–2 ns, respectively. Comprehensive studies on these Al-rich AlGaN epi-films and a typical AlGaN MQW are achieved with unique and significant results, which are useful to researchers in the field. Full article

Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = <0001>) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3<11$\overline{2}$0>) and (a+c)-type (b = 1/3<11$\overline{2}$3>) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content. Full article

In this work, optical–structural and morphological behavior when Nd is incorporated into ZnO is studied. ZnO and Nd-doped ZnO (ZnO-Nd) films were deposited at 900 °C on Silicon n-type substrates (100) by using the Hot Filament Chemical Vapor Deposition (HFCVD) technique. For this, pellets were made by from powders of ZnO(s) and a mixture of ZnO(s):Nd(OH)₃(s). The weight percent of the mixture ZnO:Nd(OH)₃ in the pellet is 1:3. The gaseous precursor generation was carried out by chemical decomposition of the pellets using atomic hydrogen which was produced by a tungsten filament at 2000 °C. For the ZnO film, diffraction planes (100), (002), (101), (102), (110), and (103) were found by XRD. For the ZnO-Nd film, its planes are displaced, indicating the incorporation of Nd into the ZnO. EDS was used to confirm the Nd in the ZnO-Nd film with an atomic concentration (at%) of Nd = 10.79. An improvement in photoluminescence is observed for the ZnO-Nd film; this improvement is attributed to an increase in oxygen vacancies due to the presence of Nd. The important thing about this study is that by the HFCVD method, ZnO-Nd films can be obtained easily and with very short times; in addition, some oxide compounds can be obtained individually as initial precursors, which reduces the cost compared to other techniques. Something interesting is that the incorporation of Nd into ZnO by this method has not yet been studied, and depending on the method used, the PL of ZnO with Nd can increase or decrease, and by the HFCVD method the PL of the ZnO film, when Nd is incorporated, increases more than 15 times compared to the ZnO film. Full article

Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb₂Te₃, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p–n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb₂Te₃ onto inert mica substrates, providing valuable insights into the integration of Sb₂Te₃ with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb₂Te₃ on pre-existing WS₂ surfaces on SiO₂/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb₂Te₃/WS₂ heterojunctions. Finally, the development of 2D Sb₂Te₃/WS₂ optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively. Full article

Certain biomarkers in exhaled breath are indicators of diseases in the human body. The non-invasive detection of such biomarkers in human breath increases the demand for simple and cost-effective gas sensors to replace state-of-the-art gas chromatography (GC) machines. The use of metal oxide (MOX) gas sensors based on thin-film structures solves the current limitations of breath detectors. However, the response at high humidity levels, i.e., in the case of exhaled human breath, significantly decreases the sensitivity of MOX sensors, making it difficult to detect small traces of biomarkers. We have introduced, in previous work, the concept of a hybrid gas sensor, in which thin-film-based MOX gas sensors are combined with an ultra-thin (20–30 nm) polymer top layer deposited by solvent-free initiated chemical vapor deposition (iCVD). The hydrophobic top layer enables sensor measurement in high-humidity conditions as well as the precise tuning of selectivity and sensitivity. In this paper, we present a way to increase the hydrogen (H₂) sensitivity of hybrid sensors through chemical modification of the polymer top layer. A poly(1,3,5,7-tetramethyl-tetravinylcyclotetrasiloxane) (PV4D4) thin film, already applied in one of our previous studies, is transformed into a silsesquioxane-containing top layer by a simple heating step. The transformation results in a significant increase in the gas response for H₂ ~709% at an operating temperature of 350 °C, which we investigate based on the underlying sensing mechanism. These results reveal new pathways in the biomedical application field for the analysis of exhaled breath, where H₂ indicates gastrointestinal diseases. Full article

In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot wall chemical vapor deposition reactor. Comparing C₃H₈ and C₂H₄ as C sources, the sample grown with C₂H₄ exhibited a slower growth rate and lower doping concentration, but superior uniformity and surface roughness compared to the C₃H₈-grown sample. Hence, C₂H₄ is deemed more suitable for commercial epitaxial wafer growth. Increasing growth pressure led to decreased growth rate, worsened thickness uniformity, reduced doping concentration, deteriorated uniformity, and initially improved and then worsened surface roughness. Optimal growth quality was observed at a lower growth pressure of 40 Torr. Furthermore, the impact of buffer layer growth on epitaxial quality varied significantly based on different C/Si ratios, emphasizing the importance of selecting the appropriate conditions for subsequent device manufacturing. Full article

To investigate the effect of ZrC on the ablative properties of C/SiC composites in a high-temperature environment, the oxidative ablation of C/SiC and C/SiC-ZrC composites at high-temperatures was examined through ablation tests. In this study, two ceramic matrix composites, C/SiC and C/SiC-ZrC, were prepared by chemical vapor deposition and precursor impregnation pyrolysis. The ablation properties of the materials were tested and analyzed using an oxyacetylene flame to simulate a high-temperature environment. The results revealed that the line ablation rate of C/SiC-ZrC was 8.48% and 20.81% lower than that of C/SiC at 30 s and 60 s, respectively. At the same ablation time, the depth of the crater resulting from erosion of the C/SiC material by the high-temperature airflow was deeper than that of C/SiC-ZrC. The traces of the fibers subjected to erosion were more prominent. In a longitudinal comparison, the mass ablation rate of C/SiC-ZrC material decreased with the increase in time, while the line ablation rate initially increased rapidly and then decreased. From 30 s to 90 s of ablation, the line ablation rate and mass ablation rate decreased by 55.62% and 89.5%, respectively. The overall trend for both rates was a decrease with the increase in time. Under the same ablation time, the ablation rate of C/SiC-ZrC was generally lower than that of C/SiC. This is because the generated molten ZrO₂ was more viscous and denser than SiO₂, effectively blocking oxidizing gases from penetrating the interior of the material. The molten ZrO₂ provided better protection for the substrate in the high-temperature environment. Full article