653 Results Found

Germanium and germanium-based compounds are widely used in microelectronics, optics, solar cells, and sensors. Recently, germanium and its oxides, nitrides, and phosphides have been studied as active electrode materials in lithium- and sodium-ion bat...

This study elucidates the thermodynamic reaction mechanism of the GeCl₄ hydrogen reduction process for Ge preparation. Five independent reactions in the Ge-Cl-H ternary system were identified, utilizing the phase law, mass conservation principles, an...

Germanium (Ge) is a system-forming material of IR photonics for the atmospheric transparency window of 8–14 µm. For optics of the 3–5 µm range, more widespread silicon (Si), which has phonon absorption bands in the long-wave r...

Germanium (Ge) as an important strategic metal is widely used in many modern-technology fields such as optical fiber and thermal solar cells. In this study, the volatilization behavior of Ge from low-grade germanium-bearing lignite was investigated i...

In recent years, with the development of science and technology, the strategic position of germanium is becoming more and more important, and the global demand for germanium is also increasing. At present, there is no unified description of the exist...

It is generally acknowledged that using germanium as a wetting film for silver nanolayers decreases the surface roughness of the metal. However, germanium atoms also tend to segregate towards the surface of silver films, increasing ohmic losses in th...

Transmission and reflection spectra of single-crystal germanium plates were experimentally measured in the terahertz spectral range. The optical parameters of germanium were determined at various Sb-doping levels. Saturation of the absorption index w...

Though nowadays germanium does not reach the range of popularity of other metals, i.e., rare earth elements, its utility in target industries makes it a strategic metal. Though germanium can be found in a series of raw materials, the principal source...

Alloy systems comprised of silicon with germanium, lead with tellurium, and bismuth with antimony have constituted a majority of thermoelectric applications during the last half-century. These legacy materials are primarily covalently bonded with a m...

In this work, the integration of graphene nanoplatelets (GNPs) with amorphous germanium (Ge) substrates is explored. The optical properties were characterized using Variable-Angle Spectroscopic Ellipsometry (VASE). The findings of this study reveal a...

Germanium is an essential microelement, and its deficiency can result in numerous diseases, particularly oncogenic conditions. Consequently, water-soluble germanium compounds, including inorganic and coordination compounds, have attracted significant...

Being not as popular as other elements, such as cobalt, lithium, and rare earth elements, both gallium and germanium have wide use in target developments/industries, thus making them valuable and strategically critical metals. The principal sources f...

Point defects are crucial in determining the quality of germanium crystals. A quantitative understanding of the thermodynamic formation properties of the point defects is necessary for the subsequent control of the defect formation during crystal gro...

Among the several experiments and techniques conceived of to search for neutrinoless double $\beta$ decay ($0\nu 2\beta$) in a handful of isotopes, presently the best lower limit on the half-life for this rare process, is provided by those using ${}^{76}$Ge, a rare isotop...

Interest in germanium electronic devices is experiencing a comeback thanks to their suitability for a wide range of new applications, like CMOS transistors, quantum technology or infrared photonics. Among these applications, Ge-based thermophotovolta...

The rare metals gallium and germanium are key strategic metals that are widely used in emerging industries. In this work, a novel hydroxamic acid extractant, BGYW, with low toxicity, was used for the selective solvent extraction of Ga ions and Ge ion...

The exfoliation of tridimensional crystal structures has recently been considered a new source of bidimensional materials. The new approach offers the possibility of dramatically enlarging the library of bidimensional materials, but the number of nan...

After the deposition process, the lattice structure of doped germanium remains low. Post-processing annealing reorders the structure and increases the output parameters. Thin films of germanium doped with gold (Ge:Au) and vanadium (Ge:V) were magnetr...

We report the spark discharge synthesis of aerosol germanium nanoparticles followed by sintering in a tube furnace at different temperatures varying from 25 to 800 °C. The size, structure, chemical composition and optical properties were studied....

Germanium (Ge) has long been recognized for its superior carrier mobility and narrower band gap compared to silicon, making it a promising candidate in microelectronics and optoelectronics. The recent demonstration of good biocompatibility, combined...

Two-dimensional silicon (silicene) and germanium (germanene) have attracted special attention from researchers in recent years. At the same time, highly oriented pyrolytic graphite (HOPG) and graphene are some of the promising substrates for growing...

The precipitation of tannin complex of germanium from sulfuric solutions obtained after dross leaching was investigated. The tested solutions contained mainly zinc, germanium, indium, and tin. The influence of temperature, time, amount of added tanni...

Nanoindentation and atomistic molecular dynamics simulations of the loading surface of monocrystalline germanium were used to investigate the evolution of the key structure, the force model, the temperature, the potential, and the deformable layer th...

The advent of the point-contact transistor is one of the most significant technological achievements in human history with a profound impact on human civilization during the past 75 years. Although the first transistor was made of germanium it was so...

High-purity germanium detectors, widely employed in fields such as aerospace applications based on radiation detection principles, have garnered attention due to their broad detection range and fast response time. However, these detectors often requi...

Recent experimental and theoretical work has demonstrated significant potential to tune the properties of silicon and germanium by adjusting the mesostructure, nanostructure, and/or crystalline structure of these group 14 elements. Despite the promis...

In this study, we theoretically investigate the response of a germanium thin film under femtosecond pulsed laser irradiation. Electron and lattice temperatures, as well as material-specific optical properties such as dielectric function and reflectiv...

Germanium is an important mainstream material for many nanoelectronic and sensor applications. The understanding of diffusion at an atomic level is important for fundamental and technological reasons. In the present review, we focus on the descriptio...

In this paper, we model the electrical properties of germanium nanowires with a particular focus on physical mechanisms of electrical molecular sensing. We use the Tibercad software to solve the drift-diffusion equations in 3D and we validate the mod...

This work focused on developing optical coatings for decorative applications that remain transparent in the radiofrequency range. To achieve this, a combination of dielectric material (silicon-aluminum nitride, SiAlN_x) and low-electrical-conductivity...

Cementation of germanium from sulphate solution obtained after the leaching of GeIn dross using zinc dust was investigated. The composition of the examined solution was 5.15 Ge, 1.52 In, and 5.81 g/dm³ Zn. In order to resemble the solution before det...

Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the be...

Germanium (Ge) incorporation profoundly modifies the structural and electronic characteristics of carbon fullerenes, giving rise to a diverse landscape of substitutional, exohedral, and endohedral Ge–fullerene architectures. Although experiment...

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant...

Germanium–cobalt–indium nanostructures were synthesized via cathodic electrodeposition from aqueous complex solutions of Ge (IV) and Co (II) with drop-like indium crystallization centers. This approach features simplicity, avoids heating...

High-purity germanium (HPGe) is a vibration-sensitive, high-resolution detector. It has been found that microphonic noise induced by vibration and electromagnetic interference from EMC causes energy resolution degradation in HPGe detectors. In this p...

The 100 GHz-class ultrafast photonic integrated circuit (PIC) positions itself as a promising technology in the post-Moore era, when the bandwidth limit of metallic interconnections constrains current electronic integrated circuits. Nevertheless, the...

We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and ther...

X-ray absorption near edge structure (XANES) spectroscopy was used on zoned sphalerites (ZnS) from two world-class Mississippi Valley Type deposits, the Central and Eastern Tennessee Mining district, USA, in order to investigate germanium oxidation s...

We report a cathodoluminescence (CL) study of layered germanium sulfide (GeS) where we observe a sharp emission peak from flakes covered with a thin hexagonal boron nitride film. GeS is a material that has recently attracted considerable interest due...

The treatment of infective or potentially infectious bone defects is a critical problem in the orthopedic clinic. Since bacterial activity and cytocompatibility are always contrary factors, it is hard to have them both in one material. The developmen...

This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source g...

This paper focuses on the principle study and application of a fractional crystallization methodology using a rotating and internally gas cooled crystallizer (so called cooled finger, developed at IME/RWTH Aachen) first applied to the refining of ger...

We analyze the efficiency in terms of a thermoelectric system of a one-dimensional Silicon–Germanium alloy. The dependency of thermal conductivity on the stoichiometry is pointed out, and the best fit of the experimental data is determined by a...

In the global landscape of neutrinoless double beta ($0\nu \beta \beta$) decay search, the use of semiconductor germanium detectors provides many advantages. The excellent energy resolution, the negligible intrinsic radioactive contamination, the possibility of en...

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III rat...

Gallium nitride (GaN) doped with germanium at a level of 10²⁰ cm⁻³ is proposed as a viable material for cladding layers in blue- and green-emitting laser diodes. Spectral reflectometry and ellipsometry are used to provide evidence of a reduced...

In this work, a vertical N-I-P germanium (Ge) photodetector (PD) with a multi-mode waveguide input is presented. The fabricated devices exhibit a low dark current of 10 nA at bias of −1 V, and a high responsivity of exceeding 0.75 A/W over the...

In this paper, we review the application of a recent formula for the lattice thermal conductivity to silicon and germanium, which are two of the most commonly used materials in electronic devices, and to graphene, one the most promising new materials...

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and hav...