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Volume 27
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Minimization of Intrinsic Impurity Concentration in ZnGeP2 Single Crystals via Directional Recrystallization

by
Alexander Gribenyukov
1,
Alexey Lysenko
1,
Nikolay Yudin
1,2,
Elena Slyunko
1,*,
Sergey Podzyvalov
1,
Mikhail Zinovev
1,2,
Vladimir Kuznetsov
1,
Andrey Kalsin
1,
Andrei Khudoley
3,
Houssain Baalbaki
1,
Maxim Kulesh
1 and
Alexey Olshukov
1
1
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
2
Institute of Atmospheric Optics, Siberian Branch, Russian Academy of Sciences, pl. Academician Zueva, 1, 634055 Tomsk, Russia
3
A.V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15 P. Brovka Str., 220072 Minsk, Belarus
*
Author to whom correspondence should be addressed.
Int. J. Mol. Sci. 2026, 27(11), 4890; https://doi.org/10.3390/ijms27114890 (registering DOI)
Submission received: 17 April 2026 / Revised: 15 May 2026 / Accepted: 22 May 2026 / Published: 28 May 2026
(This article belongs to the Section Materials Science)
Versions Notes

Abstract

Zinc germanium phosphide (ZnGeP2) is an important nonlinear crystal for mid-infrared conversion, but its performance is limited by residual absorption and intrinsic impurity phases. In this study, polycrystalline ZnGeP2 was synthesized by a modified two-temperature method, purified by inclined directional recrystallization for up to three cycles, and then grown into single crystals by the vertical Bridgman method. The resulting material was examined by shadow-projection imaging, transmission spectroscopy in the 650–2500 nm range, absorption measurements at 2.097 µm, laser-induced damage threshold (LIDT) testing, and powder X-ray diffraction. Repeated purification improved optical homogeneity and near-infrared transparency, while the absorption coefficient at 2.097 µm decreased from 0.45 to 0.30 cm−1 after three purification cycles. Semi-quantitative PXRD analysis showed progressive suppression of intrinsic impurity phosphides, with phase purity increasing from 86.31% after the first cycle to 95.995% after the second and reaching 100% after the third within the detection limit of the method. However, the LIDT decreased with increasing purification number, indicating a trade-off between lower optical losses and damage resistance. These results demonstrate that inclined directional recrystallization is an effective pre-growth purification route for ZnGeP2 and that the optimal number of purification cycles should be selected according to the intended application.
Keywords: ZnGeP2; chalcopyrite semiconductor; directional recrystallization; pre-growth purification; mid-infrared nonlinear optics; impurity phosphides; laser-induced damage threshold ZnGeP2; chalcopyrite semiconductor; directional recrystallization; pre-growth purification; mid-infrared nonlinear optics; impurity phosphides; laser-induced damage threshold

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MDPI and ACS Style

Gribenyukov, A.; Lysenko, A.; Yudin, N.; Slyunko, E.; Podzyvalov, S.; Zinovev, M.; Kuznetsov, V.; Kalsin, A.; Khudoley, A.; Baalbaki, H.; et al. Minimization of Intrinsic Impurity Concentration in ZnGeP2 Single Crystals via Directional Recrystallization. Int. J. Mol. Sci. 2026, 27, 4890. https://doi.org/10.3390/ijms27114890

AMA Style

Gribenyukov A, Lysenko A, Yudin N, Slyunko E, Podzyvalov S, Zinovev M, Kuznetsov V, Kalsin A, Khudoley A, Baalbaki H, et al. Minimization of Intrinsic Impurity Concentration in ZnGeP2 Single Crystals via Directional Recrystallization. International Journal of Molecular Sciences. 2026; 27(11):4890. https://doi.org/10.3390/ijms27114890

Chicago/Turabian Style

Gribenyukov, Alexander, Alexey Lysenko, Nikolay Yudin, Elena Slyunko, Sergey Podzyvalov, Mikhail Zinovev, Vladimir Kuznetsov, Andrey Kalsin, Andrei Khudoley, Houssain Baalbaki, and et al. 2026. "Minimization of Intrinsic Impurity Concentration in ZnGeP2 Single Crystals via Directional Recrystallization" International Journal of Molecular Sciences 27, no. 11: 4890. https://doi.org/10.3390/ijms27114890

APA Style

Gribenyukov, A., Lysenko, A., Yudin, N., Slyunko, E., Podzyvalov, S., Zinovev, M., Kuznetsov, V., Kalsin, A., Khudoley, A., Baalbaki, H., Kulesh, M., & Olshukov, A. (2026). Minimization of Intrinsic Impurity Concentration in ZnGeP2 Single Crystals via Directional Recrystallization. International Journal of Molecular Sciences, 27(11), 4890. https://doi.org/10.3390/ijms27114890

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