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Investigation of the Effect of Different SiN_x Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band

Che-Wei Hsu,
Yueh-Chin Lin,
Ming-Wen Lee and
Edward-Yi Chang

Electronics2023, 12(20), 4336;https://doi.org/10.3390/electronics12204336

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19 October 2023

The effect of different SiN_x thicknesses on the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated in this paper. The current, transconductance (G_m), cut-off frequency (f_T), maximum oscillation frequency (f_max), powe...

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Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band

Investigation of the Effect of Different SiN_x Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band