Search Results (191)

Advanced lithography, including electron beam lithography (EBL), X-ray lithography (XRL), and extreme ultraviolet lithography (EUVL), imposes stringent requirements on photoresists in resolution, sensitivity, and process compatibility, thereby driving the development of metal-containing hybrid resists and vapor-phase deposition strategies. However, existing Hf-based dry hybrid photoresists often struggle to provide sufficient dissolution contrast for clean pattern formation under mild development, as unexposed regions are not fully removed. In this work, an ether-containing hafnium-based photoresist was fabricated by molecular layer deposition (MLD). Incorporation of the diethylene glycol (DEG)-derived ether unit modifies the local coordination environment of the hybrid film and enhances the removability of the unexposed regions, enabling removal in 0.1 M HCl. FTIR and XPS analyses reveal that exposure disrupts Hf-O-C coordination motifs and converts the initial hybrid network into a more HfO_x-rich, less soluble framework. This combination of enhanced solubility in the unexposed regions and exposure-induced stabilization in the exposed regions establishes sufficient dissolution contrast for mild-acid negative-tone development. E-beam tests show a critical dose of approximately 250 μC·cm⁻² and reproducible patterning down to 50 nm. These results identify DEG-mediated ether incorporation as an effective route to improving developer compatibility in Hf-based MLD dry resists. Full article

Trends in Micro- and Nano-Lithography required for future development of large area applications ranging from high-packing-density electronics to solar cells are surveyed and outlined. Strategies to use direct laser writing to define etch masks over large areas by: (i) fixed beam moving stage and (ii) moving beam moving stage approaches are presented. The extension of planar 2D and stacked 2D (or 2.5D) fabrication methods into 3D micro- and nano-fabrication is discussed. One of the essential future characteristics of 3D nanolithography is real-time feedback capability. This can be realised via inherent 3D-capable holography, which bridges lithographic exposure control, wavefront sensing, and adaptive feedback, providing a pathway to stitch-free, large-area 3D patterning. The future of micro-fabrication is expected to evolve via highly specialised 3D architecture design and reduction in post-processing steps. Full article

Advanced nanoimprint lithography (NIL) is promising for inorganic semiconductor patterning because it enables high-resolution replication with a relatively simple process flow; however, yield loss increasingly originates from spatially distributed, subcritical distortions accumulated across coating, exposure, etching, and imprinting. In this study, we propose an integrated physics-based and data-driven framework for pre-manufacturing defect-risk prediction in NIL. The framework combines an NDA-safe layout database, a physics-based process twin, and a stochastic risk prediction model using a physics-augmented convolutional neural network with conformal uncertainty calibration. Starting from binary design layouts, the process twin sequentially captures resist thickness variations during spin coating, proximity-induced dose redistribution and development-induced pattern deformation during electron-beam lithography (EBL), density-sensitive pattern transfer during reactive ion etching (RIE), and three-dimensional resist filling during imprinting, thereby generating physically consistent parameter maps for downstream learning. The results demonstrate an end-to-end virtual inspection flow that converts layouts into spatially resolved risk maps before fabrication. In addition, patterns with similar contour extent but different local density exhibit distinctly different risk distributions, indicating that manufacturability is governed not only by nominal geometry but also by local pattern environment. These findings support pre-manufacturing virtual inspection as a physically interpretable route for early yield-risk screening in advanced NIL. Full article

Sub-15 nm line structures are key building blocks for advanced device prototyping, nanoscale electrodes, and lithography templates such as etch/deposition masks. Although ultrahigh-voltage (≥100 kV) electron-beam lithography (EBL) can more readily achieve extremely small critical dimensions, its tool and infrastructure requirements limit widespread adoption in many laboratories. In contrast, 30 kV field-emission SEM platforms are far more accessible; however, resolution-limit patterning at 30 kV is more sensitive to beam current, exposure dose, and development conditions, motivating the establishment of a reproducible process flow and a well-defined process window. Here, we investigate the resolution limit of isolated lines using a Zeiss Gemini 460 system operated at 30 kV and an in-house pattern generator with 950 k PMMA C2 resist. To demonstrate device-level applicability, we develop a stable lift-off process, and all critical dimensions are evaluated on metal lines after e-beam evaporation and lift-off. By screening beam current and scanning dose to build the dose-to-size relationship, we show that reducing beam current significantly improves the achievable minimum line width. Under 35 pA, using CD ≤ 15 nm as the criterion for sub-15 nm window extraction, the usable dose range is [700, 804.3] µC/cm², corresponding to a dose latitude of ~14.9%. The best performance is obtained at 700 µC/cm², yielding a transferred metal line width of 13.85 nm after lift-off. This work provides a practical resolution-limit process flow and a quantitative process window for performing sub-15 nm patterning on accessible 30 kV platforms, supported by product-level lift-off validation. Full article

We report a versatile, CMOS-compatible fabrication module for sub-100 nm TiN and TaN pillar electrodes, a key building block for sandwich-type test structures. As a demonstration, the electrodes were integrated into carbon nanotube-based nonvolatile random-access memory (CRAM) test structures. High-resolution hydrogen silsesquioxane (HSQ) masks defined by electron beam lithography were transferred into TiN films using optimized Ar/Cl₂ inductively coupled plasma reactive ion etching. Optical emission spectroscopy was used for real-time endpoint detection, ensuring precise etch control. The process achieved a TiN-to-HSQ selectivity of ~1.6 and reproducible nanoscale features with smooth sidewalls and an average taper angle of ~77°. Buffered hydrogen fluoride treatment effectively removed residual HSQ, revealing sharp TiN features and preserving pillar geometry. Atomic force microscopy (AFM) confirmed pillar height and profile fidelity, while conductive AFM verified electrical conductivity after planarization. The module was further demonstrated through the fabrication of TiN pillar arrays, TaN pillars, and sub-100 nm TiN line arrays. A CRAM test structure incorporating TiN pillars exhibited preliminary switching, indicating that both the test structure and fabrication process are feasible. This fabrication module provides a reproducible platform for nanoscale TiN and TaN electrodes, supporting laboratory-scale research and providing a pathway toward future integration of emerging memory and nanoelectronic technologies. Full article

Advanced solar energy-harvesting devices, such as optical rectennas, typically use metal–insulator–metal diodes because of the ultrafast response of these diodes at high frequencies. However, the diode performance is limited by weak current–voltage (I–V) asymmetry and optical losses in metallic electrodes. Graphene offers a promising alternative electrode material owing to its high carrier mobility, broadband optical transparency, and compatibility with nanoscale device architectures. Nevertheless, graphene-based optical rectennas face challenges associated with insufficient diode nonlinearity. In this study, we developed a vertically stacked graphene–double-insulator–graphene (GI²G) tunnel diode. Devices with various junction sizes were fabricated to investigate size-dependent rectifying behavior. A reduced graphene overlap area was defined by electron-beam lithography to introduce asymmetry and increase nonlinear conduction. An Al₂O₃/SiO₂ tunnel barrier composed of dielectrics with different band gaps and electron affinities improved the asymmetric I–V characteristics. Photoresponse measurements under AM1.5G illumination revealed a clear photocurrent, indicating rectification-related photoresponse. The photoresponse increased with decreasing junction area, which is consistent with enhanced rectification performance in smaller junctions. These results demonstrate that the GI²G tunnel diode provides a promising platform for next-generation energy harvesting and optical sensing applications. Full article

In high-precision optical systems such as laser optics, astronomical observation, and semiconductor lithography, anti-reflection coatings are crucial for light transmittance, imaging quality, and stability, but traditional designs face modeling challenges in balancing ultralow reflectivity, high wavefront quality, and manufacturability amid multi-dimensional parameter coupling and multi-objective constraints. This study addresses these by proposing a unified mathematical modeling framework integrating a Symmetric five-layer high-low refractive index alternating structure (V-H-V-H-V) with dual-scale nanostructures, employing a constrained quasi-Newton optimization algorithm (L-BFGS-B) to minimize reflectivity, wavefront root-mean-square (RMS) error, and surface roughness root-mean-square (RMS) in a six-dimensional parameter space. The Sellmeier equation is adopted to calculate wavelength-dependent material refractive indices, the model uses the transfer matrix method for the Symmetric five-layer high-low refractive index alternating structure’s reflectivity, incorporates nano-surface height function gradient correction, sub-wavelength modulation, and radial optimization, applies Zernike polynomials for low-order aberration correction, quantifies surface roughness via curvature proxies, and optimizes via a weighted objective function prioritizing low reflectivity. Numerical results show the spatial average reflectivity at 632.8 nm reduced to 0.13%, the weighted average reflectivity across five representative wavelengths in the 550–720 nm range to 0.037%, the reflectivity uniformity to 10.7%, the post-correction wavefront RMS to 11.6 milliwavelengths, and the surface height standard deviation to 7.7 nm. This framework enhances design accuracy and efficiency, suits UV nanoimprinting and electron beam evaporation, and offers significant value for high-power lasers, lithography, and space-borne radars. Full article

Optical metasurfaces fabricated via electron beam lithography (EBL) are increasingly pivotal for biosensing and bioimaging applications. However, charge accumulation on insulating glass substrates persists as a critical barrier, causing distortion of the incident electron beam and degradation of patterning fidelity manifested as pattern deflection, increased line-edge roughness (LER), and overlay inaccuracy. Here, we evaluate three charge-mitigation strategies: optimization of electron-beam resist (EBR) thickness, spin-coated conductive polymer layers, and thin metal capping layers. A reduction in EBR thickness from 800 nm to 150 nm led to a significant improvement in LER attributed to a shortened charge dissipation path. The introduction of a conductive polymer further enhanced pattern integrity, whereas the most substantial improvement was attained by depositing a 20 nm Au layer, which offers a highly conductive pathway for rapid charge dissipation and resulted in the lowest LER of 0.24. Our comparison establishes a clear hierarchy of effectiveness and identifies metal capping as the most reliable approach for high-fidelity nanofabrication on insulating substrates, thereby offering practical solutions for advancing glass-based photonic and meta-optical devices. Full article

We investigated the radio frequency (RF) performance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on silicon carbide substrates, featuring two distinct T-shaped gate structures. A comparative analysis between a silicon nitride (SiN_x)-passivated T-gate and a floating T-gate design reveals significant differences in parasitic capacitance and high-frequency behavior. The floating gate structure effectively reduces fringe capacitance, resulting in improved cut-off frequency (f_T) and maximum oscillation frequency (f_max), achieving f_T = 82.7 GHz and f_max = 80.2 GHz, respectively. These enhancements underscore the critical importance of optimizing gate structures to advance GaN-based HEMTs for high-speed and high-power applications. The findings provide valuable insights for the design of future RF and millimeter-wave (mm-wave) devices. Full article

A systematic experimental study of the positive-tone resist ELP-20 was conducted, covering its structural properties, film-formation behavior, and response to electron-beam exposure. Raman spectroscopy demonstrated the methacrylate nature of the resist and its spectral correspondence to poly(methyl methacrylate) PMMA, which enabled direct comparison both with PMMA itself and with existing methacrylate-based resists. Spin-coated films prepared from 3–11 wt.% solutions exhibited a robust power-law dependence of thickness on spin speed, h_∞ ∝ ω^{−0.48 ± 0.01}, and showed high thickness uniformity. The concentration dependence of the film thickness at a fixed spin speed allowed identification of the polymer–coil overlap region and enabled estimation of the effective molecular weight of the polymer base, M_eff = (25 ± 7) kg/mol. Lithographic characterization indicated a decrease in sensitivity with increasing electron energy, with a sensitivity of approximately 40 μC/cm² at 25 keV. A depth-dependent dose-distribution model provided an energy-independent average contrast value of γ ≈ 1.67. The results present a coherent and systematic description of ELP-20 behavior under electron-beam exposure and establish a basis for its further use in lithographic processing. Full article

Surface-enhanced Raman scattering (SERS) is a highly sensitive analytical technique capable of single-molecule detection, yet its performance strongly depends on the underlying plasmonic architecture. In this study, we developed a robust SERS platform based on long-range–ordered bullseye plasmonic nano-gratings with tunable period and filling fraction, fabricated via electron beam lithography and reactive ion etching and uniformly coated with a thin gold film. These concentric nanostructures support efficient surface plasmon resonance and radial SPP focusing, enabling intense electromagnetic field enhancement across the substrate. Using this platform, we achieved quantitative detection of Rhodamine 6G with enhancement factors of ${10}^5$. Notably, our results reveal a previously unrecognized mechanistic insight: the geometric configuration producing the strongest local electric fields does not yield the highest SERS enhancement, due to misalignment between the dominant field orientation and the molecular polarizability tensor. This finding explains the non-monotonic dependence of SERS performance on grating geometry and introduces a new design principle in which both field strength and field–molecule alignment must be co-optimized. Overall, this work provides a mechanistic framework for rationally engineering plasmonic substrates for sensitive and quantitative molecular detection. Full article

The microstructures of living creatures are widely used in bionics, and some can generate structural colors on biological surfaces and enable the process of dynamic camouflage. This study presents the hydrogel photoresist synthesized by polymerizing HEMA and MMA in THF solvent with initiator AIBN. Then, nanostructured gratings were fabricated on the hydrogel photoresists via double-beam interference lithography, and were characterized by scanning electron microscopy, angle-resolved spectroscopy system, and nanoindentation for pattern characterization, and nanomechanical and optical performance, respectively. Under multi-angle incident light, the optical computation of gratings with different depths indicates that a shallow implicit grating does not affect its dynamic color-changing performance. It is established that the laser power of 500 mW, a first exposure time of 5 s, and a second exposure time of 3 s are feasible for achieving efficient anti-counterfeiting nanostructures. The L_500-5-3 has greater Er and H than that of L_500-5 with the second processing, but smaller than ineffective patterns. And the depth of anti-counterfeiting gratings that is less than 0.8 μm is conducive to obtaining anti-counterfeiting gratings with different size parameters. The acquired anti-counterfeiting nanostructures exhibit excellent stability, reliability, and angle-dependent color changes under room light, which provides promising applications for security materials in daily life, sensors, optics, and electronics. Full article

Nanoimprint lithography (NIL) master fidelity is governed by coupled variations beginning with resist spin-coating, proceeding through electron beam exposure, and culminating in anisotropic etch transfer. We present an integrated, physics-based simulation chain. First, it includes a spin-coating thickness model that combines Emslie–Meyerhofer scaling with a Bornside edge correction. The simulated wafer-scale map at 4000 rpm exhibits the canonical center-rise and edge-bead profile with a 0.190–0.206 μm thickness range, while the locally selected 600 nm × 600 nm tile shows <0.1 nm variation, confirming an effectively uniform region for downstream analysis. Second, it couples an e-beam lithography (EBL) module in which column electrostatics and trajectory-derived spot size feed a hybrid Gaussian–Lorentzian proximity kernel; under typical operating conditions (${\sigma }_{traj}$ ≈ 2–5 nm), the model yields low CD bias (ΔCD = 2.38/2.73 nm), controlled LER (2.18/4.90 nm), and stable NMSE (1.02/1.05) for isolated versus dense patterns. Finally, the exposure result is passed to a level set reactive ion etching (RIE) model with angular anisotropy and aspect ratio-dependent etching (ARDE), which reproduces density-dependent CD shrinkage trends (4.42% versus 7.03%) consistent with transport-limited profiles in narrow features. Collectively, the simulation chain accounts for stage-to-stage propagation—from spin-coating thickness variation and EBL proximity to ARDE-driven etch behavior—while reporting OPC-aligned metrics such as NMSE, ΔCD, and LER. In practice, mask process correction (MPC) is necessary rather than optional: the simulator provides the predictive model, metrology supplies updates, and constrained optimization sets dose, focus, and etch set-points under CD/LER requirements. Full article

Nanoimprint lithography (NIL) is a high-resolution parallel patterning method based on molding. It has proven resolution down to the nanometer range and can be scaled up for large areas and high throughput. Its main characteristic is that the surface pattern of a mold is imprinted on a material that is displaced locally by using the difference in hardness of the mold and the moldable material, thus replicating its surface topography. This can be achieved by shaping a thermoplastic film by heating and cooling (T-NIL) or a photosensitive resin followed by a curing process for hardening (UV-NIL). In lithography, the local thickness contrast of the thin molded film can be used as a masking layer to transfer the pattern onto the underlying substrate. Therefore, NIL will be an alternative in fields in which electron-beam lithography and photolithography do not provide sufficient resolution at reasonable throughput. Direct imprint enables applications where a modified functional surface is needed without pattern transfer. NIL is currently used for high-volume manufacturing in different applications, like patterned sapphire substrates, wire grid polarizers, photonic devices, lightguides for AR/VR devices, metalenses, and biosensors for DNA analysis, and is being tested for semiconductor integrated circuit chips. Full article

This paper innovatively proposes a high-precision fabrication strategy for silicon-based micro–nano-composite layered structures composed of micron-scale platforms and nanopillars, effectively addressing the challenges of alignment errors and material mismatch during manufacturing. By integrating electron beam lithography (EBL), inductively coupled plasma (ICP) etching, and ultraviolet nanoimprint lithography (NIL) into a unified multi-step workflow, the method achieves exceptional precision and efficiency in producing complex micro–nano-composite architectures. Comprehensive structural characterization is performed using scanning electron microscopy (SEM) and atomic force microscopy (AFM), with probe convolution effects carefully corrected to ensure accurate dimensional analysis. Experimental results confirm the outstanding stability and uniformity of the fabricated structures, exhibiting minimal deviations in both feature size and spatial layout. Nanopillars with diameters ranging from 50 to 200 nm are successfully integrated onto 1-µm square platforms, with the lateral deviation of 50 nm features maintained within 5% or less. Furthermore, the method effectively mitigates thermal stress-induced misalignment during the fabrication of multi-material layers, demonstrating strong potential for scalable production of advanced photonic devices and integrated nanophotonic systems. Overall, this work establishes a robust and versatile technical pathway for the precise manufacturing and quantitative characterization of micro–nano-composite structures, providing a key foundation for the next generation of photonic integration technologies. Full article