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11 pages, 2874 KiB

Open AccessArticle

Reservoir Computing Enabled by Polymer Electrolyte-Gated MoS₂ Transistors for Time-Series Processing

by Xiang Wan, Qiujie Yuan, Lianze Sun, Kunfang Chen, Dongyoon Khim and Zhongzhong Luo

Polymers 2025, 17(9), 1178; https://doi.org/10.3390/polym17091178 - 25 Apr 2025

Cited by 1 | Viewed by 495

This study presented a novel reservoir computing (RC) system based on polymer electrolyte-gated MoS₂ transistors. The proposed transistors operate through lithium ion (Li⁺) intercalation, which induces reversible phase transitions between semiconducting 2H and metallic 1T’ phases in MoS₂ films. [...] Read more.

This study presented a novel reservoir computing (RC) system based on polymer electrolyte-gated MoS₂ transistors. The proposed transistors operate through lithium ion (Li⁺) intercalation, which induces reversible phase transitions between semiconducting 2H and metallic 1T’ phases in MoS₂ films. This mechanism enables dynamic conductance modulation with inherent nonlinearity and fading memory effects, rendering these transistors particularly suitable as reservoir nodes. Our RC implementation leverages time-multiplexed virtual nodes to reduce physical component requirements while maintaining rich temporal dynamics. Testing on a spoken digit recognition task using the NIST TI-46 dataset demonstrated 95.1% accuracy, while chaotic time-series prediction of the Lorenz system achieved a normalized root mean square error as low as 0.04. This work established polymer electrolyte-gated MoS₂ transistors as promising building blocks for efficient RC systems capable of processing complex temporal patterns, offering enhanced scalability, and practical applicability in neuromorphic computation. Full article

(This article belongs to the Special Issue Novel Conjugated Polymers and Conductive Polymers)

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18 pages, 7168 KiB

Open AccessEditor’s ChoiceArticle

Robust Carbon Nanotube Transistor Ion Sensors with Near-Nernstian Sensitivity for Multi-Ion Detection in Neurological Diseases

by Lidan Yan, Yang Zhang, Zhibiao Zhu, Yuqi Liang and Mengmeng Xiao

Nanomaterials 2025, 15(6), 447; https://doi.org/10.3390/nano15060447 - 15 Mar 2025

Cited by 1 | Viewed by 841

Abstract

Accurate monitoring of sodium and potassium ions in biological fluids is crucial for diseases related to electrolyte imbalance. Low-dimensional materials such as carbon nanotubes can be used to construct biochemical sensors based on high-performance field effect transistor (FET), but they face the problems [...] Read more.

Accurate monitoring of sodium and potassium ions in biological fluids is crucial for diseases related to electrolyte imbalance. Low-dimensional materials such as carbon nanotubes can be used to construct biochemical sensors based on high-performance field effect transistor (FET), but they face the problems of poor device consistency and difficulty in stable and reliable operation. In this work, we mass-produced carbon nanotube (CNT) floating-gate field-effect transistor devices with high uniformity and consistency through micro-/nanofabrication technology to improve the accuracy and reliability of detection without the need for statistical analysis based on machine learning. By introducing waterproof hafnium oxide gate dielectrics on the CNT FET channel, we not only effectively protect the channel area but also significantly improve the stability of the sensor. We have prepared array sensing technology based on CNT FET that can detect potassium, sodium, calcium, and hydrogen ions in artificial cerebrospinal fluid. The detection concentration range is 10 μM–100 mM and pH 3–pH 9, with a sensitivity close to the Nernst limit, and exhibits selective and long-term stable responses. This could help achieve early diagnosis and real-time monitoring of central nervous system diseases, highlighting the potential of this ion-sensing platform for highly sensitive and stable detection of various neurobiological markers. Full article

(This article belongs to the Special Issue Advanced Low-Dimensional Materials for Sensing Applications)

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12 pages, 5422 KiB

Open AccessEditor’s ChoiceArticle

Revealing the Impact of Gel Electrolytes on the Performance of Organic Electrochemical Transistors

by Mancheng Li, Xiaoci Liang, Chuan Liu and Songjia Han

Gels 2025, 11(3), 202; https://doi.org/10.3390/gels11030202 - 14 Mar 2025

Viewed by 1122

Abstract

Gel electrolyte-gated organic electrochemical transistors (OECTs) are promising bioelectronic devices known for their high transconductance, low operating voltage, and integration with biological systems. Despite extensive research on the performance of OECTs, a precise model defining the dependence of OECT performance on gel electrolytes [...] Read more.

Gel electrolyte-gated organic electrochemical transistors (OECTs) are promising bioelectronic devices known for their high transconductance, low operating voltage, and integration with biological systems. Despite extensive research on the performance of OECTs, a precise model defining the dependence of OECT performance on gel electrolytes is still lacking. In this work, we refine the device model to comprehensively account for the electrical double layer (EDL)’s capacitance of the gel electrolyte. Both experimental data and theoretical calculations indicate that the maximum transconductance of the OECT is contingent upon ion concentration, drain voltage, and scan rate, highlighting a strong correlation between the transconductance and the hydrogel electrolyte. Overall, this model serves as a theoretical tool for improving the performance of OECTs, enabling the further development of bioelectronic devices. Full article

(This article belongs to the Special Issue Research on the Applications of Conductive Hydrogels)

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26 pages, 7380 KiB

Open AccessReview

Electrolyte Gated Transistors for Brain Inspired Neuromorphic Computing and Perception Applications: A Review

by Weisheng Wang and Liqiang Zhu

Nanomaterials 2025, 15(5), 348; https://doi.org/10.3390/nano15050348 - 24 Feb 2025

Viewed by 1572

Abstract

Emerging neuromorphic computing offers a promising and energy-efficient approach to developing advanced intelligent systems by mimicking the information processing modes of the human brain. Moreover, inspired by the high parallelism, fault tolerance, adaptability, and low power consumption of brain perceptual systems, replicating these [...] Read more.

Emerging neuromorphic computing offers a promising and energy-efficient approach to developing advanced intelligent systems by mimicking the information processing modes of the human brain. Moreover, inspired by the high parallelism, fault tolerance, adaptability, and low power consumption of brain perceptual systems, replicating these efficient and intelligent systems at a hardware level will endow artificial intelligence (AI) and neuromorphic engineering with unparalleled appeal. Therefore, construction of neuromorphic devices that can simulate neural and synaptic behaviors are crucial for achieving intelligent perception and neuromorphic computing. As novel memristive devices, electrolyte-gated transistors (EGTs) stand out among numerous neuromorphic devices due to their unique interfacial ion coupling effects. Thus, the present review discusses the applications of the EGTs in neuromorphic electronics. First, operational modes of EGTs are discussed briefly. Second, the advancements of EGTs in mimicking biological synapses/neurons and neuromorphic computing functions are introduced. Next, applications of artificial perceptual systems utilizing EGTs are discussed. Finally, a brief outlook on future developments and challenges is presented. Full article

(This article belongs to the Special Issue Neuromorphic Devices: Materials, Structures and Bionic Applications)

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15 pages, 1870 KiB

Open AccessArticle

Electrochemical Switching of Laser-Induced Graphene/Polymer Composites for Tunable Electronics

by Maxim Fatkullin, Ilia Petrov, Elizaveta Dogadina, Dmitry Kogolev, Alexandr Vorobiev, Pavel Postnikov, Jin-Ju Chen, Rafael Furlan de Oliveira, Olfa Kanoun, Raul D. Rodriguez and Evgeniya Sheremet

Polymers 2025, 17(2), 192; https://doi.org/10.3390/polym17020192 - 14 Jan 2025

Cited by 2 | Viewed by 1632

Abstract

Laser reduction of graphene oxide (GO) is a promising approach for achieving flexible, robust, and electrically conductive graphene/polymer composites. Resulting composite materials show significant technological potential for energy storage, sensing, and bioelectronics. However, in the case of insulating polymers, the properties of electrodes [...] Read more.

Laser reduction of graphene oxide (GO) is a promising approach for achieving flexible, robust, and electrically conductive graphene/polymer composites. Resulting composite materials show significant technological potential for energy storage, sensing, and bioelectronics. However, in the case of insulating polymers, the properties of electrodes show severely limited performance. To overcome these challenges, we report on a post-processing redox treatment that allows the tuning of the electrochemical properties of laser-induced rGO/polymer composite electrodes. We show that the polymer substrate plays a crucial role in the electrochemical modulation of the composites’ properties, such as the electrode impedance, charge transfer resistance, and areal capacitance. The mechanism behind the reversible control of electrochemical properties of the rGO/polymer composites is the cleavage of polymer chains in the vicinity of rGO flakes during redox cycling, which exposes rGO active sites to interact with the electrolyte. Sequential redox cycling improves composite performance, allowing the development of devices such as electrolyte-gated transistors, which are widely used in chemical sensing applications. Our strategy enables the engineering of the electrochemical properties of rGO/polymer composites by post-treatment with dynamic switching, opening up new possibilities for flexible electronics and electrochemical applications having tunable properties. Full article

(This article belongs to the Special Issue Multifunctional Polymer Composite Materials)

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11 pages, 2601 KiB

Open AccessArticle

Advanced Rectifier Technologies for Electrolysis-Based Hydrogen Production: A Comparative Study and Real-World Applications

by Yan Gao, Xiongzheng Wang and Xin Meng

Energies 2025, 18(1), 48; https://doi.org/10.3390/en18010048 - 27 Dec 2024

Viewed by 1920

Abstract

In response to the growing significance of hydrogen as a clean energy carrier, this study investigates the advanced rectifier technologies employed in electrolytic hydrogen production. First, the topologies of three rectifiers typically employed in industry—24-pulse thyristor rectifiers, insulated gate bipolar transistor (IGBT) rectifiers, [...] Read more.

In response to the growing significance of hydrogen as a clean energy carrier, this study investigates the advanced rectifier technologies employed in electrolytic hydrogen production. First, the topologies of three rectifiers typically employed in industry—24-pulse thyristor rectifiers, insulated gate bipolar transistor (IGBT) rectifiers, and 24-pulse diode rectifiers with multi-phase choppers—are described in detail. Subsequently, at a constant 5 MW power level, the three rectifiers are compared in terms of rectifier efficiency, grid-side power quality, power factor, and overall investment cost. The results indicate that in comparison to the other two rectifiers, the thyristor rectifier provides superior efficiency and cost advantages, thereby maintaining a dominant market share. Additionally, case studies of rectifier power supplies from three real-world industrial projects are presented, along with actual grid-side power quality data. Finally, the challenges, potential applications, and future prospects of rectifiers in renewable energy-based hydrogen production are discussed and summarized. Full article

(This article belongs to the Special Issue Recent Advances in New Energy Electrolytic Hydrogen Production)

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24 pages, 7527 KiB

Open AccessReview

CRISPR–Cas Systems Associated with Electrolyte-Gated Graphene-Based Transistors: How They Work and How to Combine Them

by Pierre Guermonprez, Pierre Nioche, Louis Renaud, Nicolas Battaglini, Sébastien Sanaur, Eric Krejci and Benoît Piro

Biosensors 2024, 14(11), 541; https://doi.org/10.3390/bios14110541 - 7 Nov 2024

Cited by 2 | Viewed by 2464

Abstract

In this review, recent advances in the combination of CRISPR–Cas systems with graphene-based electrolyte-gated transistors are discussed in detail. In the first part, the functioning of CRISPR–Cas systems is briefly explained, as well as the most common ways to convert their molecular activity [...] Read more.

In this review, recent advances in the combination of CRISPR–Cas systems with graphene-based electrolyte-gated transistors are discussed in detail. In the first part, the functioning of CRISPR–Cas systems is briefly explained, as well as the most common ways to convert their molecular activity into measurable signals. Other than optical means, conventional electrochemical transducers are also developed. However, it seems that the incorporation of CRISPR/Cas systems into transistor devices could be extremely powerful, as the former provides molecular amplification, while the latter provides electrical amplification; combined, the two could help to advance in terms of sensitivity and compete with conventional PCR assays. Today, organic transistors suffer from poor stability in biological media, whereas graphene materials perform better by being extremely sensitive to their chemical environment and being stable. The need for fast and inexpensive sensors to detect viral RNA arose on the occasion of the COVID-19 crisis, but many other RNA viruses are of interest, such as dengue, hepatitis C, hepatitis E, West Nile fever, Ebola, and polio, for which detection means are needed. Full article

(This article belongs to the Special Issue Feature Paper in Biosensor and Bioelectronic Devices 2024)

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15 pages, 2388 KiB

Open AccessArticle

Digitalization of Enzyme-Linked Immunosorbent Assay with Graphene Field-Effect Transistors (G-ELISA) for Portable Ferritin Determination

by Melody L. Candia, Esteban Piccinini, Omar Azzaroni and Waldemar A. Marmisollé

Biosensors 2024, 14(8), 394; https://doi.org/10.3390/bios14080394 - 16 Aug 2024

Cited by 1 | Viewed by 2168

Abstract

Herein, we present a novel approach to quantify ferritin based on the integration of an Enzyme-Linked Immunosorbent Assay (ELISA) protocol on a Graphene Field-Effect Transistor (gFET) for bioelectronic immunosensing. The G-ELISA strategy takes advantage of the gFET inherent capability of detecting pH changes [...] Read more.

Herein, we present a novel approach to quantify ferritin based on the integration of an Enzyme-Linked Immunosorbent Assay (ELISA) protocol on a Graphene Field-Effect Transistor (gFET) for bioelectronic immunosensing. The G-ELISA strategy takes advantage of the gFET inherent capability of detecting pH changes for the amplification of ferritin detection using urease as a reporter enzyme, which catalyzes the hydrolysis of urea generating a local pH increment. A portable field-effect transistor reader and electrolyte-gated gFET arrangement are employed, enabling their operation in aqueous conditions at low potentials, which is crucial for effective biological sample detection. The graphene surface is functionalized with monoclonal anti-ferritin antibodies, along with an antifouling agent, to enhance the assay specificity and sensitivity. Markedly, G-ELISA exhibits outstanding sensing performance, reaching a lower limit of detection (LOD) and higher sensitivity in ferritin quantification than unamplified gFETs. Additionally, they offer rapid detection, capable of measuring ferritin concentrations in approximately 50 min. Because of the capacity of transistor miniaturization, our innovative G-ELISA approach holds promise for the portable bioelectronic detection of multiple biomarkers using a small amount of the sample, which would be a great advancement in point–of–care testing. Full article

(This article belongs to the Special Issue Current Advance in Transistor-Based Biosensors for Diagnostics)

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20 pages, 3370 KiB

Open AccessReview

Biomimetic Neuromorphic Sensory System via Electrolyte Gated Transistors

by Sheng Li, Lin Gao, Changjian Liu, Haihong Guo and Junsheng Yu

Sensors 2024, 24(15), 4915; https://doi.org/10.3390/s24154915 - 29 Jul 2024

Cited by 1 | Viewed by 3423

Abstract

Biomimetic neuromorphic sensing systems, inspired by the structure and function of biological neural networks, represent a major advancement in the field of sensing technology and artificial intelligence. This review paper focuses on the development and application of electrolyte gated transistors (EGTs) as the [...] Read more.

Biomimetic neuromorphic sensing systems, inspired by the structure and function of biological neural networks, represent a major advancement in the field of sensing technology and artificial intelligence. This review paper focuses on the development and application of electrolyte gated transistors (EGTs) as the core components (synapses and neuros) of these neuromorphic systems. EGTs offer unique advantages, including low operating voltage, high transconductance, and biocompatibility, making them ideal for integrating with sensors, interfacing with biological tissues, and mimicking neural processes. Major advances in the use of EGTs for neuromorphic sensory applications such as tactile sensors, visual neuromorphic systems, chemical neuromorphic systems, and multimode neuromorphic systems are carefully discussed. Furthermore, the challenges and future directions of the field are explored, highlighting the potential of EGT-based biomimetic systems to revolutionize neuromorphic prosthetics, robotics, and human–machine interfaces. Through a comprehensive analysis of the latest research, this review is intended to provide a detailed understanding of the current status and future prospects of biomimetic neuromorphic sensory systems via EGT sensing and integrated technologies. Full article

(This article belongs to the Section Biosensors)

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16 pages, 3121 KiB

Open AccessArticle

Enhancement of Synaptic Performance through Synergistic Indium Tungsten Oxide-Based Electric-Double-Layer and Electrochemical Doping Mechanisms

by Dong-Gyun Mah, Seong-Hwan Lim and Won-Ju Cho

Electronics 2024, 13(15), 2916; https://doi.org/10.3390/electronics13152916 - 24 Jul 2024

Viewed by 1254

Abstract

This study investigated the potential of indium tungsten oxide (IWO) channel-based inorganic electrolyte transistors as synaptic devices. We comparatively analyzed the electrical characteristics of indium gallium zinc oxide (IGZO) and IWO channels using phosphosilicate glass (PSG)-based electrolyte transistors, focusing on the effects of [...] Read more.

This study investigated the potential of indium tungsten oxide (IWO) channel-based inorganic electrolyte transistors as synaptic devices. We comparatively analyzed the electrical characteristics of indium gallium zinc oxide (IGZO) and IWO channels using phosphosilicate glass (PSG)-based electrolyte transistors, focusing on the effects of electric-double-layer (EDL) and electrochemical doping. The results showed the superior current retention characteristics of the IWO channel compared to the IGZO channel. To validate these findings, we compared the DC bias characteristics of SiO₂-based field-effect transistors (FETs) with IGZO and IWO channels. Furthermore, by examining the transfer curve characteristics under various gate voltage (V_G) sweep ranges for PSG transistors based on IGZO and IWO channels, we confirmed the reliability of the proposed mechanisms. Our results demonstrated the superior short-term plasticity of the IWO channel at V_G = 1 V due to EDL operation, as confirmed by excitatory post-synaptic current measurements under pre-synaptic conditions. Additionally, we observed superior long-term plasticity at V_G ≥ 2 V due to proton doping. Finally, the IWO channel-based FETs achieved a 92% recognition rate in pattern recognition simulations at V_G = 4 V. IWO channel-based inorganic electrolyte transistors, therefore, have remarkable applicability in neuromorphic devices. Full article

(This article belongs to the Special Issue Neuromorphic Device, Circuits, and Systems)

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11 pages, 4012 KiB

Open AccessArticle

Flexible Organic Electrochemical Transistors for Energy-Efficient Neuromorphic Computing

by Li Zhu, Junchen Lin, Yixin Zhu, Jie Wu, Xiang Wan, Huabin Sun, Zhihao Yu, Yong Xu and Cheeleong Tan

Nanomaterials 2024, 14(14), 1195; https://doi.org/10.3390/nano14141195 - 12 Jul 2024

Cited by 2 | Viewed by 2165

Abstract

Brain-inspired flexible neuromorphic devices are of great significance for next-generation high-efficiency wearable sensing and computing systems. In this paper, we propose a flexible organic electrochemical transistor using poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)- 3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) as the organic semiconductor and poly(methyl methacrylate) (PMMA)/LiClO₄ solid-state electrolyte as [...] Read more.

Brain-inspired flexible neuromorphic devices are of great significance for next-generation high-efficiency wearable sensing and computing systems. In this paper, we propose a flexible organic electrochemical transistor using poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)- 3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) as the organic semiconductor and poly(methyl methacrylate) (PMMA)/LiClO₄ solid-state electrolyte as the gate dielectric layer. Under gate voltage modulation, an electric double layer (EDL) forms between the dielectric layer and the channel, allowing the device to operate at low voltages. Furthermore, by leveraging the double layer effect and electrochemical doping within the device, we successfully mimic various synaptic behaviors, including excitatory post-synaptic currents (EPSC), paired-pulse facilitation (PPF), high-pass filtering characteristics, transitions from short-term plasticity (STP) to long-term plasticity (LTP), and demonstrate its image recognition and storage capabilities in a 3 × 3 array. Importantly, the device’s electrical performance remains stable even after bending, achieving ultra-low-power consumption of 2.08 fJ per synaptic event at −0.001 V. This research may contribute to the development of ultra-low-power neuromorphic computing, biomimetic robotics, and artificial intelligence. Full article

(This article belongs to the Special Issue Neuromorphic Devices: Materials, Structures and Bionic Applications)

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11 pages, 7630 KiB

Open AccessFeature PaperCommunication

Influence of Surface Treatments on Urea Detection Using Si Electrolyte-Gated Transistors with Different Gate Electrodes

by Wonyeong Choi, Seonghwan Shin, Jeonghyeon Do, Jongmin Son, Kihyun Kim and Jeong-Soo Lee

Micromachines 2024, 15(5), 621; https://doi.org/10.3390/mi15050621 - 5 May 2024

Viewed by 1704

Abstract

We investigated the impact of surface treatments on Si-based electrolyte-gated transistors (EGTs) for detecting urea. Three types of EGTs were fabricated with distinct gate electrodes (Ag, Au, Pt) using a top-down method. These EGTs exhibited exceptional intrinsic electrical properties, including a low subthreshold [...] Read more.

We investigated the impact of surface treatments on Si-based electrolyte-gated transistors (EGTs) for detecting urea. Three types of EGTs were fabricated with distinct gate electrodes (Ag, Au, Pt) using a top-down method. These EGTs exhibited exceptional intrinsic electrical properties, including a low subthreshold swing of 80 mV/dec, a high on/off current ratio of 10⁶, and negligible hysteresis. Three surface treatment methods ((3-amino-propyl) triethoxysilane (APTES) and glutaraldehyde (GA), 11-mercaptoundecanoic acid (11-MUA), 3-mercaptopropionic acid (3-MPA)) were individually applied to the EGTs with different gate electrodes (Ag, Au, Pt). Gold nanoparticle binding tests were performed to validate the surface functionalization. We compared their detection performance of urea and found that APTES and GA exhibited the most superior detection characteristics, followed by 11-MUA and 3-MPA, regardless of the gate metal. APTES and GA, with the highest pKa among the three surface treatment methods, did not compromise the activity of urease, making it the most suitable surface treatment method for urea sensing. Full article

(This article belongs to the Special Issue CMOS Biosensor and Bioelectronic)

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2 pages, 660 KiB

Open AccessAbstract

Merging Surface Plasmon Optical Detection with Electronic Sensing

by Wolfgang Knoll

Proceedings 2024, 97(1), 196; https://doi.org/10.3390/proceedings2024097196 - 19 Apr 2024

Viewed by 3492

Abstract

In one of the “classical” configurations of electrolyte-gated field effect transistors (EGOFETs) for biosensing, the planar gate electrode is functionalized by (a monolayer of) receptors, to which the analyte molecules of interest bind from the analyte solution, thereby modifying the gate potential, which [...] Read more.

In one of the “classical” configurations of electrolyte-gated field effect transistors (EGOFETs) for biosensing, the planar gate electrode is functionalized by (a monolayer of) receptors, to which the analyte molecules of interest bind from the analyte solution, thereby modifying the gate potential, which in turn modifies the source drain current as the sensor output signal [...] Full article

(This article belongs to the Proceedings of XXXV EUROSENSORS Conference)

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7 pages, 2641 KiB

Open AccessCommunication

An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor

by Dongyu Xie, Xiaoci Liang, Di Geng, Qian Wu and Chuan Liu

Electronics 2024, 13(8), 1485; https://doi.org/10.3390/electronics13081485 - 13 Apr 2024

Cited by 2 | Viewed by 1693

Abstract

Oxide electrolyte-gated transistors have shown the ability to emulate various synaptic functions, but they still require a high gate voltage to form long-term plasticity. Here, we studied electrolyte-gated transistors based on InO_x with tungsten doping (W-InO_x). When the tungsten-to-indium ratio [...] Read more.

Oxide electrolyte-gated transistors have shown the ability to emulate various synaptic functions, but they still require a high gate voltage to form long-term plasticity. Here, we studied electrolyte-gated transistors based on InO_x with tungsten doping (W-InO_x). When the tungsten-to-indium ratio increased from 0% to 7.6%, the memory window of the transfer curve increased from 0.2 V to 2 V over a small sweep range of −2 V to 2.5 V. Under 50 pulses with a duty cycle of 2%, the conductance of the transistor increased from 40-fold to 30,000-fold. Furthermore, the W-InO_x transistor exhibited improved paired pulse facilitation and successfully passed the Pavlovian test after training. The formation of WO₃ within InO_x and its ion intercalation into the channel may account for the enhanced synaptic plasticity. Full article

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21 pages, 7728 KiB

Open AccessReview

Oxide Ionic Neuro-Transistors for Bio-inspired Computing

by Yongli He, Yixin Zhu and Qing Wan

Nanomaterials 2024, 14(7), 584; https://doi.org/10.3390/nano14070584 - 27 Mar 2024

Cited by 2 | Viewed by 2402

Abstract

Current computing systems rely on Boolean logic and von Neumann architecture, where computing cells are based on high-speed electron-conducting complementary metal-oxide-semiconductor (CMOS) transistors. In contrast, ions play an essential role in biological neural computing. Compared with CMOS units, the synapse/neuron computing speed is [...] Read more.

Current computing systems rely on Boolean logic and von Neumann architecture, where computing cells are based on high-speed electron-conducting complementary metal-oxide-semiconductor (CMOS) transistors. In contrast, ions play an essential role in biological neural computing. Compared with CMOS units, the synapse/neuron computing speed is much lower, but the human brain performs much better in many tasks such as pattern recognition and decision-making. Recently, ionic dynamics in oxide electrolyte-gated transistors have attracted increasing attention in the field of neuromorphic computing, which is more similar to the computing modality in the biological brain. In this review article, we start with the introduction of some ionic processes in biological brain computing. Then, electrolyte-gated ionic transistors, especially oxide ionic transistors, are briefly introduced. Later, we review the state-of-the-art progress in oxide electrolyte-gated transistors for ionic neuromorphic computing including dynamic synaptic plasticity emulation, spatiotemporal information processing, and artificial sensory neuron function implementation. Finally, we will address the current challenges and offer recommendations along with potential research directions. Full article

(This article belongs to the Special Issue Neuromorphic Devices: Materials, Structures and Bionic Applications)

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