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Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice
- Lu Xie,
- Huilong Zhu,
- Yongkui Zhang,
- Xuezheng Ai,
- Junjie Li,
- Guilei Wang,
- Anyan Du,
- Zhenzhen Kong,
- Qi Wang and
- Shunshun Lu
- + 4 authors
For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge0.8Si0.2 was considered. In this work, a dual-selective atomic layer etching (ALE), incl...