Search Results (1,247)

Aircraft, as electromagnetically complex targets, have radar cross-sections (RCSs) that are influenced by various factors, with the inlet duct being a critical component that often serves as a primary source of electromagnetic scattering, significantly impacting the scattering characteristics. In light of the conflict between aerodynamic performance and electromagnetic characteristics in the design of aircraft engine inlet grilles, this paper proposes a metasurface radar-absorbing inlet grille (RIG) solution based on a NACA symmetric airfoil. The RIG adopts a sandwich structure consisting of a polyethylene terephthalate (PET) dielectric substrate, a copper zigzag metal strip array, and an indium tin oxide (ITO) resistive film. By leveraging the principles of surface plasmon polaritons, electromagnetic wave absorption can be achieved. To enhance the design efficiency, a multi-objective Bayesian optimization framework driven by the expected hypervolume improvement (EHVI) is constructed. The results show that, compared with a conventional rectangular cross-section grille, an airfoil-shaped grille under the same constraints will reduce both aerodynamic losses and the absorption bandwidth. After 100-step EHVI–Bayesian optimization, the optimized balanced model attains a 57.79% reduction in aerodynamic loss relative to the rectangular-shaped grille, while its absorption bandwidth increases by 111.99%. The RCS exhibits a reduction of over 8.77 dBsm in the high-frequency band. These results confirm that the proposed optimization design process can effectively balance the conflict between aerodynamic performance and stealth performance for RIGs, reducing the signal strength of aircraft engine inlets. Full article

Multilayer thin films composed of cobalt (Co), carbon (C), and chromium (Cr) possess promising electromagnetic properties, yet the combined Co–C–Cr system remains underexplored, particularly regarding its performance as a microwave absorber. Existing research has primarily focused on binary Co–C or Co–Cr compositions, leaving a critical knowledge gap in understanding how ternary multilayer architectures influence electromagnetic behavior. This study addresses this gap by investigating the structure, phase composition, and microwave absorption performance of Co–C–Cr multilayer coatings fabricated via magnetron sputtering onto porous silicon substrates. This study compares four-layer and eight-layer configurations to assess how multilayer architecture affects impedance matching, reflection coefficients, and absorption characteristics within the 8.2–12.4 GHz frequency range. Structural analyses using X-ray diffraction and transmission electron microscopy confirm the coexistence of amorphous and nanocrystalline phases, which enhance absorption through dielectric and magnetic loss mechanisms. Both experimental and simulated results show that increasing the number of layers improves impedance gradients and broadens the operational bandwidth. The eight-layer coatings demonstrate a more uniform absorption response, while four-layer structures exhibit sharper resonant minima. These findings advance the understanding of ternary multilayer systems and contribute to the development of frequency-selective surfaces and broadband microwave shielding materials. Full article

In the Internet of Things (IoT) era, the demand for cost-effective, flexible, wearable antennas and circuits has been growing. Accordingly, screen-printing techniques are becoming more popular due to their lower costs and high-volume manufacturing. This paper presents and investigates a full-screen-printed 1 × 4 Quasi-Yagi-Uda antenna array on a high-transparency flexible Zeonor thin-film substrate for emerging 26 GHz band (24.25–27.55 GHz) 5G applications. As part of this study, screen-printing implementation rules are developed by properly managing ink layer thickness on a transparent flexible Zeonor thin-film dielectric to achieve a decent antenna array performance. In addition, a screen-printing repeatability study has been carried out through a performance comparison of 24 antenna array samples manufactured by our research partner from CEA-Liten Grenoble. Despite the challenging antenna array screen printing at higher frequencies, the measured results show a good antenna performance as anticipated from the traditional subtractive printed circuit board (PCB) manufacturing process using standard substrates. It shows a wide-band matched input impedance from 22–28 GHz (i.e., 23% of relative band-width) and a maximum realized gain of 12.8 dB at 27 GHz. Full article

Palladium (Pd) and titanium (Ti) exhibit opposite dielectric responses upon hydrogenation, with stronger effects observed in the near-infrared (NIR) region. Leveraging this contrast, we investigated Ti/Pd bilayer thin films as a platform for NIR hydrogen sensing—particularly at telecommunication-relevant wavelengths, where such devices have remained largely unexplored. Ti/Pd bilayers coated with Teflon AF (TAF) and fabricated via sequential electron-beam and thermal evaporation were characterized using optical transmission measurements under repeated hydrogenation cycles. The Ti (5 nm)/Pd (x = 2.5 nm)/TAF (30 nm) architecture showed a 2.7-fold enhancement in the hydrogen-induced optical contrast at 1550 nm compared to Pd/TAF reference films, attributed to the hydrogen ion exchange between the Ti and Pd layers. The optimized structure, with a Pd thickness of x = 1.9 nm, exhibited hysteresis-free sensing behavior, a rapid response time (${\mathrm{t}}_{90}$ < 0.35 s at 4% ${\mathrm{H}}_2$), and a detection limit below 10 ppm. It also demonstrated excellent selectivity with negligible cross-sensitivity to $\mathrm{C}{\mathrm{O}}_2$, $\mathrm{C}{\mathrm{H}}_4$, and CO, as well as high durability, showing less than 6% signal degradation over 135 hydrogenation cycles. These findings establish a scalable, room-temperature NIR hydrogen sensing platform with strong potential for deployment in automotive, environmental, and industrial applications. Full article

Polymer composites with high dielectric permittivity (>10) and low dielectric loss are critical for energy storage and microelectronic applications. This study reports on a semi-transparent composite of a PVDF copolymer filled with Cu₇S₄ nanoparticles synthesized via a wet chemical route. Only a small content (6%) of copper sulfide increases the dielectric permittivity of the material from 10.4 to 15.9 (1 kHz), maintaining a low dielectric loss coefficient (less than 0.1). The incorporated nanoparticles affect the morphology of the composite film surface and crystalline phases in the whole volume, which was studied with FTIR spectroscopy, differential scanning calorimetry and scanning probe microscopy. Full article

Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal Ta₂O₅ (δ-Ta₂O₅) films doped with tungsten (W) were deposited on α-Al₂O₃ (0001) by metal–organic chemical vapor deposition (MOCVD). The effects of W doping on the structural, morphology, and photoelectrical properties of the obtained films were studied. The results showed that all W-doped films were n-type semiconductors. The XRD measurement result exhibited that the increase in the W doping concentration leads to the changes in the preferred growth crystal plane of the films from δ-Ta₂O₅ ($10\overline{1}1$) to (0001). The 1.5% W-doped film possessed the best crystal quality and conductivity. The Hall measurement showed that the minimum resistivity of the film was 2.68 × 10⁴ Ω∙cm, and the maximum carrier concentration was 7.39 × 10¹⁴ cm³. With the increase in the W concentration, the surface roughness of the film increases, while the optical bandgap decreases. The optical band gap of the 1.5% W-doped film was 3.92 eV. The W doping mechanisms were discussed. Full article

Bio-nanocomposite films were prepared using chitosan, gelatin, and varying concentrations (0, 0.5, 1.0, 2.0, and 5.0 wt%) of titanium dioxide (TiO₂) nanoparticles in acetic acid via a casting method. The incorporation of TiO₂ nanoparticles into the bio-chitosan matrix enhanced ultraviolet (UV) absorption and improved the films’ physical, mechanical, and electrical properties. Additionally, the TiO₂-loaded films exhibited antimicrobial activity, contributing to the extended preservation of packaged products by inhibiting microbial growth. Notably, the bio-nanocomposite films containing 1.0 wt% TiO₂ exhibited an electroactive response, bending under relatively low electric field strength (250 V/mm), whereas the control film without TiO₂ required higher field strength (550 V/mm) to achieve bending. This indicates potential applications in electroactive actuators requiring precise movement control. Among the tested concentrations, films containing 0.5 wt% and 1.0 wt% TiO₂ (Formulas 7 and 8) demonstrated optimal performance. These films presented a visually appealing appearance with no tear marks, low bulk density (0.91 ± 0.04 and 0.85 ± 0.18 g/cm³), a satisfactory electromechanical response at 250 V/m (17.85 ± 2.58 and 61.48 ± 6.97), low shrinkage percentages (59.95 ± 3.59 and 54.17 ± 9.28), high dielectric constant (1.80 ± 0.07 and 8.10 ± 0.73), and superior UV absorption compared with pure bio-chitosan films, without and with gelatin (Formulas 1 and 6). Full article

Thermosensitive Poly(N-isopropylacrylamide) (PNIPAm) films were synthesized via atmospheric pressure dielectric barrier discharge (APDBD) plasma polymerization. In order to control the thickness of the films, a spin coating technique was used during the deposition of N-isopropylacrylamide (NIPAM) monomer solution onto several glass substrates. We used the coefficient of determination (R-square value) in linear regression to investigate the significance and optimize spin coating parameters during the fabrication of NIPAM coatings before exposure to APDBD plasma to ensure reproducible and uniform film properties. The spin coating parameters investigated in this study include spin speed, spin time, and NIPAM solution concentration with R-square values of 0.978, 0.946, and 0.944, respectively. Also, as a result of the thermosensitive nature of NIPAM, the spin coating operating conditions of temperature and humidity were maintained at 39.0 °C and 15%, respectively. During the APDBD plasma polymerization, argon was used as the discharge gas, and the distance between the two parallel electrodes and plasma frequency were maintained at 5.0 mm and 17 kHz, respectively. The plasma exposure time required for polymerization of PNIPAm coatings was optimized to 60 s. Also, the results showed that a coating with minimal defects had an optimal thickness of 5.18 μm, fabricated under conditions of 90 wt.% NIPAM concentration, spin speed of 4000 rpm, and total spin time of 7 s. Full article

To improve solid-state lithium batteries, solution casting has been employed to create lithium ion-conducting copolymer electrolytes involving poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP)/polyvinylpyrrolidone (PVP) blend polymers with various compositions. Following X-ray diffraction and Fourier transformation (FTIR), the structural characterisation and identification of molecular bonding in polymer electrolytes were confirmed. Through AC impedance analysis, the electrical characteristics of the solid-state polymer films were investigated. The dielectric conductivity of the sample was found to obey the modified Arrhenius relationship, while in the case of a sample with higher conductivity, it followed Arrhenius behaviour. The relaxation parameters and dielectric behaviour of the samples are demonstrated and discussed. Full article

This study presents the successful fabrication of lead zirconate titanate (PZT) thin films on silicon (Si) substrates using a hybrid deposition method combining spin-coating and RF sputtering techniques. Initially, a PZT layer was deposited through four successive spin-coating cycles, followed by an additional layer formed via RF sputtering. The resulting multilayer structure was annealed at ${700 }^{°}$C for 2 h to improve crystallinity. Comprehensive material characterization was conducted using XRD, SEM, cross-sectional SEM, EDX, and UV–VIS absorbance spectroscopy. The analyses confirmed the formation of a well-crystallized perovskite phase, a uniform surface morphology, and an optical band gap of approximately 3.55 eV, supporting its suitability for sensing applications. Building upon these findings, a multilayer PZT-based touch sensor was fabricated and electrically characterized. Low-frequency I–V measurements demonstrated consistent and repeatable polarization behavior under cyclic loading conditions. In addition, $\left|Z\right|$–f measurements were performed to assess the sensor’s dynamic electrical behavior. Although expected dielectric responses were observed, the absence of distinct anti-resonance peaks suggested non-idealities linked to ${\mathrm{Ag}}^{+}$ ion diffusion from the electrode layers. To account for these effects, the classical Butterworth–Van Dyke (BVD) equivalent circuit model was extended with additional inductive and resistive components representing parasitic pathways. This modified model provided excellent agreement with the measured impedance and phase data, offering deeper insight into the interplay between material degradation and electrical performance. Overall, the developed sensor structure exhibits strong potential for use in piezoelectric sensing applications, particularly for tactile and pressure-based interfaces. Full article

By embedding an aluminum-laminated layer within La₂O₃ thin films and subjecting them to high-temperature rapid thermal annealing, a La₂O₃/LaAl_xO_y/La₂O₃ sandwich dielectric was formed. This structure enhances the interface properties with both the silicon substrate and the metal gate electrode, improving current conduction. Comprehensive analysis using X-ray Photoelectron Spectroscopy (XPS) revealed that this novel process not only facilitates the formation of a high-quality lanthanum aluminate layer, as indicated with Al 2p peak at 74.5 eV, but also effectively suppresses silicate layer growth, as supported by the weak Si-O signal from both the Si 2s (153.9 eV) and O 1s (533 eV) peaks at the dielectric/Si interface in the Al-laminated samples. Fourier Transform Infrared (FTIR) spectroscopy revealed a significant reduction in the OH absorption peak at 3608 cm⁻¹ OH-related band centered at 3433 cm⁻¹. These improvements are attributed to the aluminum-laminated layer, which blocks oxygen and hydroxyl diffusion, the LaAl_xO_y layer scavenging interface silicon oxide, and the consumption of oxygen during LaAl_xO_y formation under thermal annealing. Electrical measurements confirmed that the dielectric films exhibited significantly lower interface and oxide trap densities compared to native La₂O₃ samples. This approach provides a promising method for fabricating high-quality lanthanum-based gate dielectric films with controlled dielectric/substrate interactions, making it suitable for nano-CMOS and memristive device applications. Full article

Silicon oxynitride (SiO_xN_y, hereafter denoted as SiON) thin films represent an intermediate phase between silicon dioxide (SiO₂) and silicon nitride (Si₃N₄). Through systematic compositional ratio adjustments, the refractive index can be precisely tuned across a wide range from 1.45 to 2.3. However, the underlying mechanism governing the influence of elemental composition on film structural quality remains insufficiently understood. To address this knowledge gap, we systematically investigate the effects of key industrial plasma-enhanced chemical vapor deposition (PECVD) parameters—including precursor gas selection and flow rate ratios—on SiON film properties. Our experimental measurements reveal that stoichiometric SiO_xN_y (x = y) achieves a minimum surface roughness of 0.18 nm. As oxygen content decreases and nitrogen content increases, progressive replacement of Si-O bonds by Si-N bonds correlates with increased structural defect density within the film matrix. Capacitance–voltage (C-V) characterization demonstrates a corresponding enhancement in device capacitance following these compositional modifications. Recent studies confirm that controlled modulation of film stoichiometry enables precise tailoring of dielectric properties and capacitive behavior, as demonstrated in SiON-based power electronics, thereby advancing applications in related fields. Full article

BaTiO₃-based lead-free ferroelectric films with a large recoverable energy density (W_rec) and a high energy efficiency (η) are crucial components for next-generation dielectric capacitors, which are used in energy conditioning and storage applications in integrated circuits. In this study, grain-engineered (Ba_0.95,Sr_0.05)(Zr_0.2,Ti_0.8)O₃ (BSZT) ferroelectric thick films (~500 nm) were prepared on Si substrates. These films were deposited at 350 °C, 100 °C lower than the temperature at which the LaNiO₃ buffer layer was deposited on Pt/Ti. This method reduced the (001) grain population due to a weakened interface growth mode, while promoting volume growth modes that produced (110) and (111) grains with a high polarizability. As a result, these films exhibited a maximum polarization of ~88.0 μC/cm², a large W_rec of ~203.7 J/cm³, and a high energy efficiency η of 81.2% (@ 6.4 MV/cm). The small-field dielectric constant nearly tripled as compared with that of the same BSZT/LaNiO₃ heterostructure deposited at the same temperature (350 °C or 450 °C). The enhanced linear dielectric response, delayed ferroelectric polarization saturation, and increased dielectric strength due to the nano-grain size, collectively contributed to the improved energy storage performance. This work provides a novel approach for fabricating high-performance dielectric capacitors for energy storage applications. Full article

This article analyzes the reactive magnetron sputtering process, using a two-element Zn-Al target, for depositing aluminum-doped zinc oxide (AZO) layers, aimed at transparent electronics. AZO films were deposited on Corning 7059 glass, flexible Corning Willow^® glass and amorphous silica substrates. To optimize the process, the study examined the target surface state across varying argon/oxygen ratios. The gas mixture significantly influenced the Al/Zn atomic ratio in the films, affecting their structural, optical and electrical performance. Films deposited at 80/20 argon/oxygen ratio—near the dielectric mode—showed high light transmission (84%) but high resistivity (47.4·10⁻³ Ω·cm). Films deposited at ratio of 84/16—close to metallic mode—exhibited lower resistivity (1.9·10⁻³ Ω·cm) but reduced light transmission (65%). The best balance was achieved with an 82/18 ratio, yielding high light transmission (83%) and low resistivity (1.4·10⁻³ Ω·cm). These findings highlight the critical role of sputtering atmosphere in tailoring AZO layer properties for use in transparent electronics. Full article

This study reports a gate-tunable three-terminal optoelectronic synaptic device based on an Al/ZnO nanoparticles (NPs)/SiO₂/Si structure for neuromorphic in-sensor memory applications. The ZnO NP film, fabricated via spin coating, exhibited strong UV-induced excitatory post-synaptic current (EPSC) responses that were modulated by gate voltage through charge injection across the SiO₂ dielectric rather than by conventional field effect. Optical stimulation enabled short-term synaptic plasticity, with paired-pulse facilitation (PPF) values reaching 185% at a gate voltage of −5.0 V and decreasing to 180% at +5.0 V, confirming gate-dependent modulation of synaptic weight. Repeated stimulation enhanced learning efficiency and memory retention, as demonstrated by reduced pulse numbers for relearning and slower EPSC decay. Wickelgren’s power law analysis further revealed a decrease in the forgetting rate under negative gate bias, indicating improved long-term memory characteristics. A 3 × 3 synaptic device array visualized visual memory formation through EPSC-based color mapping, with darker intensities and slower fading observed under −5.0 V bias. These results highlight the critical role of gate-voltage-induced charge injection through the SiO₂ dielectric in controlling optical potentiation and electrical depression, establishing ZnO NP-based optoelectronic synaptic devices as promising platforms for energy-efficient, light-driven neuromorphic computing. Full article