Search Results (112)

The development of deep coalbed methane (buried depth > 2000 m) in the Yan’an block of Ordos Basin is limited by low permeability, the pore structure of the coal reservoir, and the gas–water occurrence relationship. It is urgent to clarify the key control mechanism of pore structure on gas migration. In this study, based on high-pressure mercury intrusion (pore size > 50 nm), low-temperature N₂/CO₂ adsorption (0.38–50 nm), low-field nuclear magnetic resonance technology, fractal theory and Pearson correlation coefficient analysis, quantitative characterization of multi-scale pore–fluid system was carried out. The results show that the multi-scale pore network in the study area jointly regulates the occurrence and migration process of deep coalbed methane in Yan’an through the ternary hierarchical gas control mechanism of ‘micropore adsorption dominant, mesopore diffusion connection and macroporous seepage bottleneck’. The fractal dimensions of micropores and seepage are between 2.17–2.29 and 2.46–2.58, respectively. The shape of micropores is relatively regular, the complexity of micropore structure is low, and the confined space is mainly slit-like or ink bottle-like. The pore-throat network structure is relatively homogeneous, the difference in pore throat size is reduced, and the seepage pore shape is simple. The bimodal structure of low-field nuclear magnetic resonance shows that the bound fluid is related to the development of micropores, and the fluid mobility mainly depends on the seepage pores. Pearson’s correlation coefficient showed that the specific surface area of micropores was strongly positively correlated with methane adsorption capacity, and the nanoscale pore-size dominated gas occurrence through van der Waals force physical adsorption. The specific surface area of mesopores is significantly positively correlated with the tortuosity. The roughness and branch structure of the inner surface of the channel lead to the extension of the migration path and the inhibition of methane diffusion efficiency. Seepage porosity is linearly correlated with gas permeability, and the scale of connected seepage pores dominates the seepage capacity of reservoirs. This study reveals the pore structure and ternary grading synergistic gas control mechanism of deep coal reservoirs in the Yan’an Block, which provides a theoretical basis for the development of deep coalbed methane. Full article

The possibility of collecting new archaeological elements useful in reconstructing the dynamics of population, production and commercial activities in the Bronze Age at the edge of the central-southern Venice Lagoon was provided between 2023 and 2024 thanks to an intervention of rescue archaeology planned during some water restoration works in the Giare–Mira area. Three small excavations revealed, approximately one meter below the current surface and covered by alluvial sediments, a rather complex palimpsest dated to the late Recent and the early Final Bronze Age. Three large circular pits containing exclusively purified grey/blue clay and very rare inclusions of vegetable fibres, and many large, fired clay vessels’ bases, walls and rims clustered in concentrated assemblages and random deposits point to potential on-site production. Two pyro-technological structures, one characterised by a sub-circular combustion chamber and a long inlet channel/praefurnium, and the second one with a sub-rectangular shape with arched niches along its southern side, complete the exceptional context here discovered. To analyse the relationship between the site and the natural sedimentary succession and to evaluate the possible extension of this site, three electrical resistivity tomography (ERT) and low-frequency electromagnetic (FDEM) measurements were collected. Several manual core drillings associated with remote sensing integrated the geophysical data in the analysis of the geomorphological evolution of this area, clearly related to different phases of fluvial activity, in a framework of continuous relative sea level rise. The typology and chronology of the archaeological structures and materials, currently undergoing further analyses, support the interpretation of the site as a late Recent/early Final Bronze Age productive site. Geophysical and geomorphological data provide information on the palaeoenvironmental setting, suggesting that the site was located on a fine-grained, stable alluvial plain at a distance of a few kilometres from the lagoon shore to the south-east and the course of the Brenta River to the north. The archaeological site was buried by fine-grained floodplain deposits attributed to the Brenta River. The good preservation of the archaeological structures buried by fluvial sediments suggests that the site was abandoned soon before sedimentation started. Full article

For archaeological studies, the expected outcome of a Ground Penetrating Radar (GPR) survey is a series of time-slices (or depth-slices) that mark the position of buried structures at different depths. The clarity of these time-slices is strongly site-dependent and is particularly worsened in the presence of even small percentages of clay, which strongly attenuates the GPR signal. This is the condition affecting the Greek–Roman archaeological site of Tindari (Sicily, Italy). Here, we performed a multichannel GPR survey particularly focusing on a residential insula. In order to increase the signal-to-noise ratio, we tested two processing strategies: a conventional in-line stacking and a new concept of off-line stacking. This last was performed dividing spatially adjacent channels of the GPR multichannel system into groups and stacking the signals of each group at each specific location. We observed that off-line stacking improves the signal-to-noise ratio in 2D sections and time-slices quality. Comparisons showed that off-line stacking has a clear advantage over traditional in-line stacking, at least for the specific application reported in this paper. Off-line stacking of GPR multichannel systems is, therefore, simple but very effective in increasing the investigation depth, especially in challenging environments. Full article

Background/Objectives: Dimethyl trisulfide (DMTS) is a naturally occurring polysulfide with known antioxidant and neuroprotective properties. DMTS is a lipophilic transient receptor potential ankyrin 1 (TRPA1) ligand that reaches the central nervous system (CNS). Its role in the CNS, particularly regarding depression-like behaviour, has yet to be explored. This study investigates the influence of DMTS on stress responses and whether this effect is mediated through the TRPA1 ion channel, known for its role in stress adaptation. Using a mouse model involving three-week exposure, we examined the impact of DMTS on depression-like behaviour and anxiety and identified the involved brain regions. Methods: Our methods involved testing both Trpa1-wild-type and gene-knockout mice under CUMS conditions and DMTS treatment. DMTS was administered intraperitoneally at a dose of 30 mg/kg on days 16 and 20 of the 21-day CUMS protocol—in hourly injections seven times to ensure sustained exposure. Various behavioural assessments—including the open field, marble burying, tail suspension, forced swim, and sucrose preference tests—were performed to evaluate anxiety and depression-like behaviour. Additionally, we measured body weight changes and the relative weights of the thymus and adrenal glands, while serum levels of corticosterone and adrenocorticotropic hormone were quantified via ELISA. FOSB (FBJ murine osteosarcoma viral oncogene homolog B) immunohistochemistry was utilised to assess chronic neuronal activation in stress-relevant brain areas. Results: Results showed that CUMS induces depression-like behaviour, with the response being modulated by the TRPA1 status and that DMTS treatment significantly reduced these effects when TRPA1 channels were functional. DMTS also mitigated thymus involution due to hypothalamic–pituitary–adrenal (HPA) axis dysregulation. Conclusions: Overall, DMTS appears to relieve depressive and anxiety symptoms through TRPA1-mediated pathways, suggesting its potential as a dietary supplement or adjunct therapy for depression and anxiety. Full article

Underground mine surveys present unique challenges, including the logistics of deploying an energy source, placing geophones in solid rock, managing reverberation from the adit, and ensuring safety. We present the results of seismic surveying at the historic Deer Trail Mine in south-central Utah (USA). The mine is located along the eastern side of the Tushar Range. The surveys utilised a narrow, mostly horizontal adit, 120–510 m below the ground surface. The country rock consists of highly fractured and mineralised Permian to Pennsylvanian quartzites, shales, and limestones. A short test of a 96-channel common midpoint (CMP) P-wave profile was conducted using an accelerated weight-dropper source. We supplemented the P-wave survey with tests of surface-wave dispersion and horizontal-vertical spectral ratio modelling for shallow S-wave structure. These tests confirmed the capability to map shallow, small-scale structure. A conventional CMP 264-channel survey with an explosive source covered 1728 m. A static recording array was used for both surveys with 4.5-Hz vertical geophones. The conventional CMP profile imaged horizontal and dipping reflectors down to about 2000 m, interpreted as lithologic variations in the bedrock. Our study demonstrates the potential for high-resolution seismic exploration in an unconventional and challenging setting to guide the exploitation of deeply buried mineral resources. Full article

We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm², the proposed device achieves a photocurrent density of 1.68 × 10⁻³ mA/mm, responsivity of 8.41 × 10⁵ A/W, photo-to-dark-current ratio of 2.0 × 10⁸, UV-to-visible rejection ratio exceeding 10⁸, detectivity above 1 × 10¹⁹ cm·Hz^1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations. Full article

The performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study the channel behavior compared with the conventional Si power MOSFET. Our paper investigates the performance of the proposed selective buried triple gate power MOSFET by using different channel materials (SiGe/GeSn over Si) to compare with the conventional Si MOSFET. Our 2D Silvaco simulation output significantly improves device on-current, ON-resistance, channel electron mobility, transconductance, and enhancement in various parameters governing power MOSFET. The unique design of our proposed triple gate gives very high channel mobility of 880 cm²/V·s, which we believe to be significant in the triple gate power MOSFET domain. The results show that our optimized triple-gate device achieves an ultra-low specific ON-resistance of 0.31 mΩ·cm², improving Balliga’s FOM1 by 411.61% and FOM2 by 98.704%. This makes it suitable for high-speed and switching devices, compatible with various high-mobility channel materials, and well-suited for future CMOS applications. Full article

Many current 1 × 2 splitter couplers based on multimode interference (MMI) face difficulties such as significant back reflection and limited flexibility in waveguide segmentation at the output, which necessitate the addition of transitional structures like tapered waveguides or S-Bends. These limitations reduce their effectiveness as photonic data-center applications, where precise waveguide configurations are crucial. To address these challenges, we propose a novel nanoscale 1 × 2 angled multimode interference (AMMI) power splitter with silicon nitride (SiN) buried core and silica cladding. The innovative angled light path design improved performance by minimizing back reflections back to the source and by providing greater flexibility of waveguide interconnections, making the splitter more adaptable for data-center applications. The SiN core was selected due to its lower refractive index contrast with silica compared to silicon, which helps further reduce back reflection. The dimensions of the splitter were optimized using full vectorial beam propagation method (FV-BPM), finite-difference time domain (FDTD), and multivariable optimization scanning tool (MOST) simulations to support transmission across the O-band. Our proposed device demonstrated excellent performance, achieving an excess loss of 0.22 dB and an imbalance of <0.01 dB at the output ports at an operational wavelength of 1.31 µm. The total device length is 101 µm with a thickness of 0.4 µm. Across the entire O-band range (1260–1360 nm), the performance of the splitter presented excess loss of up to 1.57 dB and an imbalance of up to 0.05 dB. Additionally, back reflections at the operational wavelength were measured at −40.96 dB and up to −39.67 dB over the O-band. This silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) compatible AMMI splitter demonstrates high tolerance for manufacturing deviations due to its geometric layout, dimensions, and material selection. Furthermore, the proposed splitter is well-suited for use in O-band transceiver systems and can enhance data-center optical networks by supporting high-speed, low-loss data transmission. The compact design and CMOS compatibility make this device ideal for integrating into dense, high-performance computing environments, ensuring reliable signal distribution and minimal power loss. The splitter can support multiple communication channels, thus enhancing bandwidth and scalability for next-generation data-center infrastructures. Full article

This study investigates the impact of four parameters—gate angles, fin height controlled through gate overlaps and the distance from fin to source/drain, and substrate bottom doping concentration—on the row hammer effect (RHE) in DRAM cells. The influence of adjacent and passing gates on the DRAM cell body potential was identified as a key factor in D0 and D1 failures. The tolerance for D1 and D0 failures was analyzed, defined as the threshold number of pulses required to induce a 0.6 V change in the storage node voltage (from 1.2 V to 0.6 V for a D1 failure or from 0 V to 0.6 V for a D0 failure). D1 (D0) failure tolerances with the slope from the top of the top gate (θ_angle) of 3°, the height of the TiN gate covering the fin (H_{fin_overlap}) of 12.5 nm, and the height of the fin (H_fin) of 12.5 nm are 1.26 × 10⁶ (4.8 × 10⁶), 1.14 × 10⁶ (4 × 10⁷), and 7.5 × 10⁵ (4.8 × 10⁵), respectively. Higher θ_angles and smaller fin heights generally result in higher RHE tolerances. Although decreasing the fin height reduced the RHE, it also decreased the on-current and resulted in an increase in the threshold voltage (V_T) and the subthreshold swing (SS). In addition, by increasing the substrate bottom doping concentration (P_{dop_bot}), we improve RHE tolerance twice its original level without reducing the on-current. Therefore, designing a buried channel array transistor (BCAT) structure requires careful consideration of these trade-offs, and a thorough understanding of the underlying mechanism is crucial to devising strategies that reduce RHE tolerance. The findings of this study are expected to contribute significantly to the development of next-generation DRAM architectures, enhancing stability and performance. By addressing the reliability challenges posed by advanced scaling, this study paves the way for the ongoing advancement of DRAM technology for high-density and high-performance applications. Full article

In the Bonan area, the lower fourth member of the Shahejie Formation (Es4x) is buried beneath a sedimentary pile ranging from 2500 to 5000 m. Understanding the impact of diagenetic alterations on these deeply buried reservoirs is crucial for effective hydrocarbon exploration and production. This study employs a terminal fan sedimentation model, encompassing depositional environments such as feeder channels, distributary channels, floodplains, and basinal zones, to provide insights into the spatial distribution of reservoir properties and their influence on the localization of optimal reservoirs within the sag. The analysis integrates diagenetic facies with well log responses, subsurface porosity trends, and permeability variations across the formation. The petrographic analysis indicates that the sandstone is composed primarily of litharenite, feldspathic litharenite, lithic arkose, and minor amounts of arkose. The dominant clay cement is illite, accompanied by mixed-layer smectite/illite, chlorite, and kaolinite. Thin section observations reveal secondary porosity formed through the dissolution of quartz grains, volcanic rock fragments, and feldspar, along with their associated cements. These sandstones exhibit relatively good sorting, with average porosity and air permeability values of 14.01% and 12.73 mD, respectively. Diagenetic alterations are categorized into three processes: porosity destruction, preservation, and generation. Key diagenetic mechanisms include compaction, cementation, replacement, and dissolution, with compaction exerting the most significant control on reservoir porosity reduction. Statistical analysis indicates that the average porosity loss due to compaction is approximately 13.3%, accounting for about 38% of the original porosity. The detrital rock cement predominantly comprises quartz (42%), feldspar (32%), clay minerals (14%), and carbonate (12%). Under the prevailing depositional conditions, porosity is enhanced by dissolution and fracturing, while late-stage diagenetic cementation by clay and carbonate minerals—excluding chlorite—adversely affects reservoir quality. Consequently, the distributary zone is identified as the primary target for exploration. Full article

In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I_on/I_off ratio of more than seven orders of magnitude, with I_on reaching up to 2.56 × 10⁻⁴ A/μm, I_off as low as 3.99 × 10⁻¹² A/μm, and a threshold voltage reduced to −0.43 V, exhibiting excellent electrical characteristics. Furthermore, a new CMOS inverter comprising a proposed PJLFET and a conventional NMOSFET is designed. With the identical geometric dimensions and gate electrode, the pull-up and pull-down driving capabilities of the proposed CMOS are equivalent, showing the potential for application in high-performance chips in the future. Full article

With the growing demand for more efficient power conversion and silicon reaching its theoretical limit, wide bandgap semiconductor devices are emerging as a potential solution. For instance, Gallium Nitride (GaN)-based high-electron-mobility transistors (HEMTs) are getting more attention, and several structures for the normally off operation have been proposed. Adding an AlN interlayer in conventional AlGaN/GaN normally on HEMT structures is known to enhance the current density. In this work, the effect of an AlN interlayer in the normally off AlGaN/GaN MISHEMT with a buried p-region was investigated using a TCAD simulation from Silvaco. The added AlN interlayer increases the two-dimensional electron gas density, requiring a higher p-doping concentration to achieve the same threshold voltage. The simulation results show that the overall effect is a reduction in the device’s current density and peak transconductance by 21.83% and 44.4%, respectively. Further analysis of the current profile shows that because of the buried p-region and at high gate voltages, the current flows near the AlGaN/GaN interface and along the insulator/AlGaN interface. Adding an AlN interface blocks the migration of channel electrons to the insulator/AlGaN interface, resulting in a lower current density. Full article

The inability of geophysical methods to directly detect gold ore bodies remains a hot topic in the realm of gold geophysical exploration. Through the analysis of high-precision magnetic method, resistivity and induced polarization methods with the gradient arrays, electrical resistivity tomography, and well logging, combined with the discovery of gold mineralization in exploration trenches and boreholes, it has been found that gold mineralization can be classified into two types: terminal and channel. The terminal-type gold mineralization is marked by a buried depth of less than 30 m, accompanied by varying degrees of silicification and pyritization. In contrast, the channel-type of gold mineralization is buried deeper than 30 m and occurs within structural fractures or volcanic breccia mineralized alteration zones. The resistivity difference constitutes a significant geophysical indicator differentiating these two types of gold mineralization. Both types of gold mineralization are located adjacent to IP anomalies, potentially suggesting characteristics of low-sulfur gold mineralization. After comparing several globally typical epithermal gold deposits, we conclude that the findings presented in this paper encapsulate the geophysical traits of an un-eroded, low-sulfidation epithermal gold deposit. These insights offer a valuable reference for the direct detection of similar gold orebodies using geophysical methods. Full article

The Ordovician dolomite in the Ordos Basin is an important natural gas reservoir. Exploring dolomite genesis and the factors influencing reservoir characteristics is essential for deep carbonate rock exploration. This study offers a comprehensive analysis of dolomite evolution using methods such as thin-section petrography, isotope analysis, and trace and rare earth elements. The analysis shows that: Based on petrographic observations of the Majiagou Formation in the study area, the dolomite in the study area can be divided into residual oolitic dolomite of synsedimentary or metasomatic origin, micritic dolomite of secondary metasomatism or recrystallization origin, powder crystal dolomite, and fine crystal dolomite. Reservoir pores mainly develop intergranular pores, mold pores, dissolved pores, and fractures. Combined with the characteristics of major elements, trace elements, carbon and oxygen isotopes, rare earth elements, and inclusions in the study area, it can be concluded that the fifth member dolomite of the Majiagou Formation is of shallow–medium burial origin. The diagenetic evolution sequence from the penecontemporaneous period to the middle–deep burial period in the study area is penecontemporaneous dolomite, anhydrite dissolution → seepage silt filling, freshwater dolomite, calcite, and gypsum filling, pressure solution compaction, calcite partial dissolution → gypsum filling, karst cave, buried hydrothermal dolomite, dolomite partial dissolution → calcite complete dissolution, pore dissolution expansion, and quartz pyrite filling. In the early stage of compaction and pressure solution, the primary pores are rapidly reduced, and in the later stage, sutures are generated to provide channels for reservoir fluid migration. The recrystallization reduces the porosity during the middle–deep burial period. Full article

As semiconductor devices become smaller, their performance and integration density improve, but new negative effects emerge due to the reduced distance between structures. In DRAM, these effects can lead to data loss or require additional refresh cycles, causing performance degradation. Specifically, in the 6F² DRAM structure, activating a word line (WL) lowers the energy barrier of adjacent WLs, leading to the Pass Gate Effect (PGE). This study investigates the use of buried oxide beneath the WL to mitigate the PGE through simulation. Using SILVACO TCAD, we analyzed the impact of varying the size and position of the buried oxide on the PGE. The results showed that increasing the oxide size or reducing the distance to the WL effectively reduced the PGE. However, the presence of interface traps, which increase with the addition of buried oxide, was found to exacerbate the PGE, indicating that minimizing interface traps is crucial when incorporating buried oxide. Full article