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Keywords = amplified spontaneous emission

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37 pages, 2151 KB  
Article
Performance Assessment of All-Optical NAND and XNOR Gates at 120 Gb/s Using a Single Optically Pumped Semiconductor Optical Amplifier Mach–Zehnder Interferometer
by Amer Kotb and Kyriakos E. Zoiros
Electronics 2026, 15(14), 3217; https://doi.org/10.3390/electronics15143217 - 21 Jul 2026
Abstract
This paper presents a numerical investigation of all-optical NAND and XNOR logic gates implemented with a single optically pumped semiconductor optical amplifier integrated into a Mach–Zehnder interferometer (OP-SOA-MZI) at 120 Gb/s. Conventional approaches require two cascaded MZI stages to obtain both logic functions. [...] Read more.
This paper presents a numerical investigation of all-optical NAND and XNOR logic gates implemented with a single optically pumped semiconductor optical amplifier integrated into a Mach–Zehnder interferometer (OP-SOA-MZI) at 120 Gb/s. Conventional approaches require two cascaded MZI stages to obtain both logic functions. The present work demonstrates that a single OP-SOA-MZI suffices for both gates under appropriate operating conditions. The quality factor (QF) serves as the primary performance metric. The NAND gate yields a QF of 28.6, while the XNOR gate yields a QF of 18.7. A comparison with the conventional electrically pumped SOA–MZI (EP-SOA–MZI) configuration shows that the OP-SOA–MZI architecture consistently produces higher QF values and exhibits superior tolerance to noise and high-speed operation. This improvement stems from enhanced carrier replenishment and improved phase stability provided by optical pumping. The study further examines the dependence of the QF on five operational parameters: absorption coefficient, pump power, data rate, phase noise, and amplified spontaneous emission noise. The results quantify the parametric sensitivity of each logic gate and establish operating regimes for reliable high-speed performance. Full article
(This article belongs to the Special Issue Advanced Electronic Materials and Functional Devices)
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10 pages, 643 KB  
Article
Covert Key Generation and Distribution Based on Gain Switching Laser
by Yibo Liu, Huatao Zhu, Feng Jiang, Tong Xu, Haijing Li, Xin Zhang, Shuyan Chen and Shisi Chen
Photonics 2026, 13(7), 627; https://doi.org/10.3390/photonics13070627 - 29 Jun 2026
Viewed by 260
Abstract
This article proposes and experimentally demonstrates a covert key distribution scheme based on the phase fluctuation of a gain-switched laser diode (GSLD). The gain-switched pulse is used to generate the covert signal through spectral broadening and temporal spreading. The amplified spontaneous emission (ASE) [...] Read more.
This article proposes and experimentally demonstrates a covert key distribution scheme based on the phase fluctuation of a gain-switched laser diode (GSLD). The gain-switched pulse is used to generate the covert signal through spectral broadening and temporal spreading. The amplified spontaneous emission (ASE) light is used to generate ASE noise in the public channel. Eavesdroppers cannot perceive signals hidden in the public noise. The experimental results show that the correlation coefficient of the key waveforms reaches 0.95, and the scheme’s key generation rate (KGR) reaches 1.88 Gbit/s through a 25 km single-mode fiber (SMF). Moreover, the binary bitstreams have passed the NIST statistical test suite. The covert key distribution scheme proposed in this article provides an efficient way for the method of “one-time-pad” key distribution in high-speed optical communication systems. Full article
(This article belongs to the Section Optical Communication and Network)
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11 pages, 5631 KB  
Article
Temperature-Dependent Performance Optimization of a Filtered ASE Source Employing Low-Concentration Erbium-Doped Fiber
by Wei Liu, Jianming Liu, Wei Xu and Jia Guo
Quantum Beam Sci. 2026, 10(2), 12; https://doi.org/10.3390/qubs10020012 - 22 May 2026
Viewed by 456
Abstract
Research on the thermal stability of amplified spontaneous emission (ASE) has mostly focused on broadband spectra. High-precision fiber optic gyroscopes (FOGs), however, require spectrally filtered sources. The impact of erbium-ion doping concentration on the temperature performance of such filtered sources remains relatively explored. [...] Read more.
Research on the thermal stability of amplified spontaneous emission (ASE) has mostly focused on broadband spectra. High-precision fiber optic gyroscopes (FOGs), however, require spectrally filtered sources. The impact of erbium-ion doping concentration on the temperature performance of such filtered sources remains relatively explored. This work systematically compares low-concentration and high-concentration erbium-doped fibers (EDFs). The fibers are used in a bidirectional forward-pumped ASE configuration. This configuration integrates a 1530 nm Gaussian filter isolator. The optimized low-concentration EDF fully absorbs pump power over a longer length. Its gain-profile temperature shift partly compensates the filter passband shift. At the optimum fiber length of 10 m, this source shows a mean wavelength temperature drift of only 0.107 ppm/°C. In contrast, the commercial high-concentration EDF gives a drift of 0.136 ppm/°C. The power conversion efficiency of this source reaches 26.9%. The commercial EDF attains 24.5%. The results demonstrate that reducing the Er3+ doping concentration simultaneously improves the wavelength thermal stability and efficiency of filtered ASE sources. This finding offers important guidance for high-accuracy FOG design. Full article
(This article belongs to the Section Spectroscopy Technique)
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16 pages, 7257 KB  
Article
Enhanced Thermal Stability in Compact ASE Sources Enabled by Optimized Erbium-Doped Fiber Design
by Jianming Liu, Wenbin Lin, Wei Liu, Jinjuan Cheng, Chengcheng He, Wei Xu and Jia Guo
Photonics 2026, 13(5), 424; https://doi.org/10.3390/photonics13050424 - 24 Apr 2026
Viewed by 604
Abstract
Amplified Spontaneous Emission (ASE) sources are widely employed as highly stable broadband sources in fields such as high-precision navigation and optical detection. Erbium-doped fiber (EDF), as the core active component in ASE sources, has long been a key subject of thermal stability research. [...] Read more.
Amplified Spontaneous Emission (ASE) sources are widely employed as highly stable broadband sources in fields such as high-precision navigation and optical detection. Erbium-doped fiber (EDF), as the core active component in ASE sources, has long been a key subject of thermal stability research. We fabricated a low-doped EDF with an 80 μm-cladding using the vapor phase doping (VPD) technique. This EDF was compared with a commercial 125 μm-cladding EDF using a double-pass forward (DPF) optical path configuration with a narrowband filter. We investigated the temperature-dependent characteristics of the ASE spectra generated by the two EDFs with different parameters. The temperature drift performance of the two EDFs was analyzed based on three critical indicators of the spectrum: mean wavelength, spectral bandwidth, and output power. In comparison with the commonly used EDF, the results show that a properly designed small-cladding EDF with an appropriate length can deliver higher ASE output power and exhibit a lower mean-wavelength temperature drift. This study provides an important guideline for promoting the miniaturization of high-precision fiber-optic sensing devices. Full article
(This article belongs to the Special Issue Advancements in Ultrafast Laser Science and Technology)
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25 pages, 2663 KB  
Article
250 Gb/s All-Optical XNOR Logic Using a Single QD-SOA-MZI: Demonstration and Comprehensive Performance Analysis
by Amer Kotb, Bisheng Zhu, Jiali Cui and Kyriakos E. Zoiros
Micromachines 2026, 17(4), 441; https://doi.org/10.3390/mi17040441 - 1 Apr 2026
Viewed by 592
Abstract
Increasing data rates in optical networks require ultra-fast all-optical logic gates to avoid electro-optic conversion bottlenecks. This work presents a numerical simulation and performance analysis of an all-optical XNOR logic gate operating at 250 Gb/s, implemented using a single quantum-dot semiconductor optical amplifier [...] Read more.
Increasing data rates in optical networks require ultra-fast all-optical logic gates to avoid electro-optic conversion bottlenecks. This work presents a numerical simulation and performance analysis of an all-optical XNOR logic gate operating at 250 Gb/s, implemented using a single quantum-dot semiconductor optical amplifier (QD-SOA) embedded in a Mach–Zehnder interferometer (MZI). Using the QD-SOA’s ultrafast carrier dynamics and high nonlinearity, the gate achieves a quality factor (QF) of 26.30 at 250 Gb/s, corresponding to a theoretical bit-error rate below 10−9. A systematic numerical investigation examines performance dependence on six critical parameters. Data rate analysis shows that the gate maintains QF > 6 up to 700 Gb/s, with QF = 10.47 at this maximum reliable speed, providing a safety margin of approximately 1.8× above the QF = 6 threshold. Performance degrades progressively thereafter, with QF falling to 5.18 at 800 Gb/s and 0.73 at 1 Tb/s due to finite carrier recovery dynamics. Pulse energy optimization identifies an optimum at 0.20 pJ, beyond which gain saturation and nonlinear effects degrade performance below QF = 6 at 0.40 pJ. Continuous-wave probe power exhibits optimal operation at 0.40 mW, with failure above 0.80 mW. Injection current density analysis establishes an optimal bias at 4 kA/cm2, where balanced gain and nonlinearity yield peak performance. Noise tolerance assessment demonstrates operation up to a spontaneous emission factor of 6 and phase noise below 6 × 10−14 rad2/Hz, beyond which signal integrity collapses. This parameter sweep delineates the operational envelope and optimization guidelines for QD-SOA-MZI-based all-optical logic, confirming its potential as a compact core component for future ultra-high-speed optical communication and signal processing systems. Full article
(This article belongs to the Special Issue Advances in Integrated Photonic Devices)
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19 pages, 1073 KB  
Article
An Analysis of Diffracted Mode Outcoupling in the Context of Optical Gain Measurements of Organic Thin Films: A Diffracted Emission Profile Method
by Thilo Pudleiner, Jan Hoinkis and Christian Karnutsch
Micromachines 2026, 17(2), 153; https://doi.org/10.3390/mi17020153 - 23 Jan 2026
Viewed by 594
Abstract
The sustained interest in efficient, low-cost, and straightforward-to-manufacture lasers has prompted intense research into organic semiconductor laser emitter materials in recent decades. The main focus of this research is determining the optical gains and losses of amplified spontaneous emission (ASE) in order to [...] Read more.
The sustained interest in efficient, low-cost, and straightforward-to-manufacture lasers has prompted intense research into organic semiconductor laser emitter materials in recent decades. The main focus of this research is determining the optical gains and losses of amplified spontaneous emission (ASE) in order to describe materials by their amplification signature. A method that has been used for decades as the standard technique for determining gain characteristics is the variable-stripe-length (VSL) method. The success of the VSL method has led to the development of further measurement techniques. These techniques provide a detailed insight into the nature of optical amplification. One such method is the scattered emission profile (SEP) method. In this study, we present an extension of the SEP method, the Diffracted Emission Profile (DEP) method. The DEP method is based on the detection of ASE by partial decoupling of waveguide modes diffracted by a one-dimensional grating integrated into a planar waveguide. Diffraction causes a proportion of the intensity to exit the waveguide, transferring the growth and decay process of the waveguide mode to the transverse mode profile of the diffracted mode. In the present article, an approach to determine the amplification signature of an organic copolymer is presented, utilizing partial decoupled radiation. Full article
(This article belongs to the Special Issue Emerging Trends in Optoelectronic Device Engineering, 2nd Edition)
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18 pages, 5868 KB  
Article
Automatic Modulation Classification of Mixed Signals Based on Phase Noise-Insensitive High-Order Cumulant and Distribution Characteristics in Radio-over-Fiber System
by Zihan Zhang, Qi Zhang, Xiangjun Xin, Zhiqi Huang, Qihan Zhao, Haipeng Yao, Ran Gao, Feng Tian, Fu Wang, Zhipei Li, Yongjun Wang, Sitong Zhou, Qinghua Tian and Leijing Yang
Electronics 2025, 14(24), 4910; https://doi.org/10.3390/electronics14244910 - 14 Dec 2025
Viewed by 745
Abstract
To overcome the limitations of existing automatic modulation classification (AMC) methods that mainly target single-signal scenarios in radio-over-fiber (RoF) system, a mixed-signal AMC scheme based on phase noise-insensitive high-order cumulants (PNI-HOC) and distribution characteristics is proposed. The approach enables accurate classification of mixed [...] Read more.
To overcome the limitations of existing automatic modulation classification (AMC) methods that mainly target single-signal scenarios in radio-over-fiber (RoF) system, a mixed-signal AMC scheme based on phase noise-insensitive high-order cumulants (PNI-HOC) and distribution characteristics is proposed. The approach enables accurate classification of mixed signals in RoF system. Specifically, a PNI-HOC algorithm is first introduced to mitigate the influence of laser linewidth-induced phase noise. Then, distribution characteristics derived from the signal amplitude histogram are extracted to construct a two-dimensional characteristics space. These characteristics are subsequently fed into decision tree and support vector machine (SVM) classifiers for signal identification. To validate the effectiveness of the scheme, a 10 GBaud RoF system with a 70 km fiber link is implemented. The simulation results show that, compared with the conventional high-order cumulant method, the approach solely based on amplitude histogram distribution characteristics and the scheme based on deep neural networks (DNN) classifier using histogram characteristics, the proposed scheme achieves significantly higher classification accuracy at low optical signal–noise ratios (OSNRs). In particular, when the fiber length is 70 km and the OSNR is ≥16 dB, the classification accuracy of mixed signals is consistently maintained at 100%. Furthermore, the robustness of the proposed method is verified under various system impairments, including laser phase noise, chromatic dispersion and nonlinear effects, amplified spontaneous emission noise, multipath fading, etc., confirming its superior and stable performance. Full article
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12 pages, 8726 KB  
Article
Rapid Prototyping of Organic Linear Waveguides for Light Amplification Studies
by Michal Wnuk and Konrad Cyprych
Appl. Sci. 2025, 15(21), 11459; https://doi.org/10.3390/app152111459 - 27 Oct 2025
Viewed by 754
Abstract
Studying the luminescent properties and the light amplification capabilities are fundamental investigations for newly synthesized organic compounds intended to act as chromophores. These studies are conducted for compounds in the form of solutions, solids, and also molecules stabilized with the aid of polymers. [...] Read more.
Studying the luminescent properties and the light amplification capabilities are fundamental investigations for newly synthesized organic compounds intended to act as chromophores. These studies are conducted for compounds in the form of solutions, solids, and also molecules stabilized with the aid of polymers. One of the methods used to study amplification is the generation of amplified spontaneous emission (ASE) using stripe-shaped light beam excitation. This process can lead to the generation of ASE, but also, with the coexistence of microcrystals and scatterers, to the generation of laser action with random feedback, known as random lasing (RL). However, when the degree of light scattering is too high, it can lead to the inhibition of laser emission. Therefore, as an alternative in studying amplification properties, we developed a protocol that allows the investigation of laser action generation using rapidly prototyped polymer waveguides with an embedded dye. The setup used was based on Direct Laser Writing (DLW), which enables the controlled fabrication of multimode optical waveguides. We demonstrated that the use of this technique will allow for the study of the performance of dyes from strictly structured resonators, enabling measurements of gain and lasing threshold. This allowed us to lower the lasing thresholds while maintaining the directionality of emission. Full article
(This article belongs to the Special Issue The Applications of Laser-Based Manufacturing for Material Science)
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13 pages, 896 KB  
Article
Quantum Interference of Spontaneous Emission and Coherent Population Trapping for a Quantum Emitter Embedded Within a Two-Dimensional Photonic Crystal
by Vassilios Yannopapas and Emmanuel Paspalakis
Photonics 2025, 12(11), 1041; https://doi.org/10.3390/photonics12111041 - 22 Oct 2025
Viewed by 1466
Abstract
We investigate the phenomenon of quantum interference in spontaneous emission pathways for a quantum emitter embedded in a two-dimensional photonic crystal composed of a square lattice of dielectric cylindrical rods. Using a V-type three-level system as a model, we demonstrate that the anisotropic [...] Read more.
We investigate the phenomenon of quantum interference in spontaneous emission pathways for a quantum emitter embedded in a two-dimensional photonic crystal composed of a square lattice of dielectric cylindrical rods. Using a V-type three-level system as a model, we demonstrate that the anisotropic Purcell effect inherent in such photonic structures can amplify quantum interference to its theoretical maximum, where the degree of interference p reaches unity. This results in the complete suppression of spontaneous emission for one polarization (directional suppression) and the emergence of coherent population trapping without the need for external coherent fields. By employing density matrix formalism, we derive analytical expressions for the population dynamics and identify conditions for indefinite or long-lived excited-state population. Our findings can find application in quantum technologies, including high-precision atomic clocks, magnetometry, and quantum information processing. Full article
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19 pages, 1892 KB  
Article
Optimizing Multi-Band Optical Network Design: A Layered Approach for Engineering and Education
by Nick Nafpliotis, Dimitris Uzunidis and Gerasimos Pagiatakis
Appl. Sci. 2025, 15(20), 11270; https://doi.org/10.3390/app152011270 - 21 Oct 2025
Viewed by 907
Abstract
The sixth generation of mobile networks (6G) presents increasing complexity that challenges traditional analysis and performance evaluation methods, necessitating more structured approaches for both research and educational purposes. This study introduces a layered methodology that classifies physical layer impairments, such as amplified spontaneous [...] Read more.
The sixth generation of mobile networks (6G) presents increasing complexity that challenges traditional analysis and performance evaluation methods, necessitating more structured approaches for both research and educational purposes. This study introduces a layered methodology that classifies physical layer impairments, such as amplified spontaneous emission (ASE) noise and fiber nonlinearities into sequential layers. The approach enables independent assessment of individual impairment contributions to overall system performance, facilitating more accurate evaluation of signal quality metrics, including signal-to-noise-ratio (SNR) and optical signal-to-noise-plus-interference ratio (OSNIR) across multiple spectral bands. By implementing this step-by-step analysis framework, researchers can better understand the cumulative impact of various transmission effects, while students can gain progressive insight into complex optical communication principles, making this approach serve dual purposes as both an effective research tool for system optimization and a pedagogical instrument that enhances engineering education. The effectiveness of the methodology is demonstrated through the performance evaluation of a system employing five spectral bands (E, S1, S2, C, and L) under various operating conditions. Full article
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13 pages, 1889 KB  
Article
Dimension Tailoring of Quasi-2D Perovskite Films Based on Atmosphere Control Toward Enhanced Amplified Spontaneous Emission
by Zijia Wang, Xuexuan Huang, Zixuan Song, Chiyu Guo, Liang Tao, Shibo Wei, Ke Ren, Yuze Wu, Xuejiao Sun and Chenghao Bi
Materials 2025, 18(19), 4628; https://doi.org/10.3390/ma18194628 - 7 Oct 2025
Viewed by 1113
Abstract
Quasi-two-dimensional (Q2D) perovskite films have garnered significant attention as novel gain media for lasers due to their tunable bandgap, narrow linewidth, and solution processability. Q2D perovskites endowed with intrinsic quantum well structures demonstrate remarkable potential as gain media for cost-effective miniaturized lasers, owing [...] Read more.
Quasi-two-dimensional (Q2D) perovskite films have garnered significant attention as novel gain media for lasers due to their tunable bandgap, narrow linewidth, and solution processability. Q2D perovskites endowed with intrinsic quantum well structures demonstrate remarkable potential as gain media for cost-effective miniaturized lasers, owing to their superior ambient stability and enhanced photon confinement capabilities. However, the mixed-phase distribution within Q2D films constitutes a critical determinant of their optical properties, exhibiting pronounced sensitivity to specific fabrication protocols and processing parameters, including annealing temperature, duration, antisolvent volume, injection timing, and dosing rate. These factors frequently lead to broad phase distribution in Q2D perovskite films, thereby inducing incomplete exciton energy transfer and multiple emission peaks, while simultaneously making the fabrication processes intricate and reducing reproducibility. Here, we report a novel annealing-free and antisolvent-free method for the preparation of Q2D perovskite films fabricated in ambient atmosphere. By constructing a tailored mixed-solvent vapor atmosphere and systematically investigating its regulatory effects on the nucleation and growth processes of film via in situ photoluminescence spectra, we successfully achieved the fabrication of Q2D perovskite films with large n narrow phase distribution characteristics. Due to the reduced content of small n domains, the incomplete energy transfer from small n to large n phases and the carriers’ accumulation in small n can be greatly suppressed, thereby suppressing the trap-assistant nonradiative recombination and Auger recombination. Ultimately, the Q2D perovskite film showed a single emission peak at 519 nm with the narrow full width at half maximum (FWHM) of 21.5 nm and high photoluminescence quantum yield (PLQY) of 83%. And based on the optimized Q2D film, we achieved an amplified spontaneous emission (ASE) with a low threshold of 29 μJ·cm−2, which was approximately 60% lower than the 69 μJ·cm−2 of the control film. Full article
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5 pages, 1074 KB  
Abstract
Test and Analysis of Lateral-Offset Optical Fiber Mach-Zehnder Interferometer Using Near-Infrared Light Employed as Chloride Ion Concentration Sensor
by Jian-Neng Wang and Pei-Hsuan Wu
Proceedings 2025, 129(1), 73; https://doi.org/10.3390/proceedings2025129073 - 12 Sep 2025
Viewed by 451
Abstract
This paper presents a test and analysis of a lateral-offset optical fiber Mach-Zehnder interferometer (MZI) employed as a chloride ion concentration sensor using a near-infrared light source (amplified spontaneous emission, wavelength = 1520–1620 nm). An 8 cm optical fiber MZI sensor was fabricated [...] Read more.
This paper presents a test and analysis of a lateral-offset optical fiber Mach-Zehnder interferometer (MZI) employed as a chloride ion concentration sensor using a near-infrared light source (amplified spontaneous emission, wavelength = 1520–1620 nm). An 8 cm optical fiber MZI sensor was fabricated and fusion-spliced using a lateral-offset process. We used this 8 cm lateral-offset optical fiber MZI to measure chloride ions in samples of sodium chloride solutions with different weight concentrations ranging from 0.015% to 25% and then analyzed the interference spectra regarding their normalized intensity and wavelength shift and three integral area ranges (1520–1580 nm, 1540–1600 nm, and 1520–1620 nm). The comparative spectral analysis results show that the lateral-offset optical fiber MZI sensor exhibited a linear decrease in its normalized intensity as well as a wavelength shift when the concentration increased. The lateral-offset optical fiber MZI sensor displayed a sine wave plot in the three integral area ranges when the concentration increased. Other than sensing parameters such as the normalized intensity (adjusted R-squared = 0.98223) or wavelength shift (adjusted R-squared = 0.94209), the three integral area ranges (adjusted R-squared = 0.96425, 0.91621, and 0.9577, respectively), which possessed adjusted R-squared values greater than 0.9, are also recommended for use as sensing parameters for the testing and analysis of a lateral-offset optical fiber MZI employed as a chloride ion concentration sensor using a near-infrared light source. Full article
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17 pages, 1494 KB  
Article
All-Optical Encryption and Decryption at 120 Gb/s Using Carrier Reservoir Semiconductor Optical Amplifier-Based Mach–Zehnder Interferometers
by Amer Kotb, Kyriakos E. Zoiros and Wei Chen
Micromachines 2025, 16(7), 834; https://doi.org/10.3390/mi16070834 - 21 Jul 2025
Cited by 4 | Viewed by 1820
Abstract
Encryption and decryption are essential components in signal processing and optical communication systems, providing data confidentiality, integrity, and secure high-speed transmission. We present a novel design and simulation of an all-optical encryption and decryption system operating at 120 Gb/s using carrier reservoir semiconductor [...] Read more.
Encryption and decryption are essential components in signal processing and optical communication systems, providing data confidentiality, integrity, and secure high-speed transmission. We present a novel design and simulation of an all-optical encryption and decryption system operating at 120 Gb/s using carrier reservoir semiconductor optical amplifiers (CR-SOAs) embedded in Mach–Zehnder interferometers (MZIs). The architecture relies on two consecutive exclusive-OR (XOR) logic gates, implemented through phase-sensitive interference in the CR-SOA-MZI structure. The first XOR gate performs encryption by combining the input data signal with a secure optical key, while the second gate decrypts the encoded signal using the same key. The fast gain recovery and efficient carrier dynamics of CR-SOAs enable a high-speed, low-latency operation suitable for modern photonic networks. The system is modeled and simulated using Mathematica Wolfram, and the output quality factors of the encrypted and decrypted signals are found to be 28.57 and 14.48, respectively, confirming excellent signal integrity and logic performance. The influence of key operating parameters, including the impact of amplified spontaneous emission noise, on system behavior is also examined. This work highlights the potential of CR-SOA-MZI-based designs for scalable, ultrafast, and energy-efficient all-optical security applications. Full article
(This article belongs to the Special Issue Integrated Photonics and Optoelectronics, 2nd Edition)
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9 pages, 1226 KB  
Communication
J-Aggregate-Enhanced Hybrid Nanoporous Alumina for Resonator-Free Amplified Emission
by Evgeniia O. Soloveva, Nikita Toropov and Anton A. Starovoytov
Photonics 2025, 12(4), 330; https://doi.org/10.3390/photonics12040330 - 1 Apr 2025
Cited by 1 | Viewed by 1814
Abstract
This study explores the development and optical characterization of a hybrid material combining nanoporous anodic alumina with J-aggregates of pseudoisocyanine dyes, highlighting its potential for photonic applications in bright broadband sources. The hybrid material was synthesized by impregnating an alumina matrix with a [...] Read more.
This study explores the development and optical characterization of a hybrid material combining nanoporous anodic alumina with J-aggregates of pseudoisocyanine dyes, highlighting its potential for photonic applications in bright broadband sources. The hybrid material was synthesized by impregnating an alumina matrix with a dye solution, which facilitated a thermally stimulated self-assembly process for the formation of J-aggregates. The incorporation of J-aggregates within the matrix was confirmed through several independent optical measurement techniques. A distinct absorption peak and corresponding luminescence signal were attributed to J-aggregate formation, while energy transfer from the alumina’s intrinsic oxygen vacancy centers to the dye aggregates was observed under specific excitation conditions. Amplified spontaneous emission was achieved under pulsed laser excitation, characterized by spectral narrowing and a nonlinear increase in emission intensity beyond a critical pump threshold, indicative of a similarity with random lasing facilitated by scattering within the porous structure. Full article
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12 pages, 3771 KB  
Article
Reflective Semiconductor Optical Amplifier Chip with Low Ripple for C-Band External Cavity Narrow-Linewidth Laser
by Shaojie Li, Haiyang Yu, Haotian Bao, Menghan Ren, Jianguo Liu, Zeqiu Liu and Yulian Cao
Photonics 2025, 12(3), 193; https://doi.org/10.3390/photonics12030193 - 25 Feb 2025
Cited by 1 | Viewed by 2390
Abstract
The main characteristic of a reflective semiconductor optical amplifier chip (RSOA) is that it does not generate optical resonance under electric pumping and maintains the operation state of spontaneous emission. In this paper, a Nb2O5/SiO2/Nb2O [...] Read more.
The main characteristic of a reflective semiconductor optical amplifier chip (RSOA) is that it does not generate optical resonance under electric pumping and maintains the operation state of spontaneous emission. In this paper, a Nb2O5/SiO2/Nb2O5/SiO2 (four-layer Nb2O5/SiO2) film system is employed as the coating material for the output facet of the RSOA. The 3 dB spectral width of the spontaneous emission spectrum from this RSOA reaches 79.4 nm, with a ripple of less than 1 dB occurring across this wavelength range. Notably, around the 1550 nm wavelength, the ripple is as low as 0.5 dB. This represents the best performance reported for this type of chip. The RSOA is packaged as a narrow-linewidth external cavity laser. Under test conditions of 25 °C and 180 mA, the external cavity laser produces an output power of 12.6 mW and achieves a linewidth of 299.8 Hz. Furthermore, by adjusting the Fabry–Pérot (FP) standard cavity, filtering, and other external cavity parameters, the lasing spectrum of the narrow-linewidth external cavity laser based on the RSOA is tunable across a wavelength range from 1535.83 nm to 1561.42 nm, which shows the usability of the proposed ROSA for a C-band external cavity narrow-linewidth laser. Full article
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