Search Results (19)

In high energy density physics, the demand for precise detection of nanosecond-level fast physical processes is high. Ga:ZnO (GZO), GaN, and other fast scintillators are widely used in pulsed signal detection. However, many of them, especially wide-bandgap materials, still face issues of low luminous intensity and significant self-absorption. Therefore, an enhanced method was proposed to tune the wavelength of materials via coating perovskite quantum dot (QD) films. Three-layer samples based on GZO were primarily investigated and characterized. Radioluminescence (RL) spectra from each face of the samples, as well as their decay times, were obtained. Lower temperatures further enhanced the luminous intensity of the samples. Its overall luminous intensity increased by 2.7 times at 60 K compared to room temperature. The changes in the RL processes caused by perovskite QD and low temperatures were discussed using the light tuning and transporting model. In addition, an experiment under a pico-second electron beam was conducted to verify their pulse response and decay time. Accordingly, the samples were successfully applied in beam state monitoring of nanosecond pulsed proton beams, which indicates that GZO wafer coating with perovskite QD films has broad application prospects in pulsed radiation detection. Full article

Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they have low safety because they use the near-infrared (NIR) region that can damage the retina. Therefore, they are difficult to apply to automation technologies such as automobiles and factories where humans can be constantly exposed. In contrast, short-wavelength infrared photodetectors based on PbS QDs are actively being developed because they can absorb infrared rays in the eye-safe region by controlling the particle size of QDs and can be easily and inexpensively manufactured through a solution process. However, PbS QDs-based SWIR photodetectors have low chemical stability due to the electron/hole extraction layer processed by the solution process, making it difficult to manufacture them in the form of patterning and arrays. In this study, bulk NiO and ZnO were deposited by sputtering to achieve uniformity and patterning of thin films, and the performance of PbS QDs-based photodetectors was improved by optimizing the thickness and annealing conditions of the thin films. The fabricated photodetector achieved a high response characteristic of 114.3% through optimized band gap and improved transmittance characteristics. Full article

The introduction of side-emitting lenses into white light-emitting diodes (LEDs) has enabled thin panel lighting technology based on LED technology, but also presents the disadvantage of low color rendering due to insufficient red components in the spectra of typical white LEDs. Additional application of remote quantum dot (QD) components such as QD films or caps presents the issues of increased numbers of components and higher costs. In this study, we incorporated red QDs directly into a lens placed on white LEDs and analyzed the effects of QD lenses on the optical characteristics of a lighting device through experiments and simulations. By incorporating red CdSe/ZnS QDs into UV-curable resin to fabricate QD lenses and applying them to white LEDs, we significantly improved the color rendering index and were able to adjust the correlated color temperature over a wide range between 2700 and 9900 K. However, as the concentration of QDs in the lens increased, scattering by the QD particles was enhanced, strengthening the Lambertian distribution in the intensity plot. Following the development of optical models for QD lenses under experimental conditions, comprehensive optical simulations of white LED lighting systems revealed that increasing the device height proved more effective than modifying TiO₂ scattering particle concentration in the diffuser plate for mitigating QD-induced bright spots and enhancing illumination uniformity. Full article

We conducted experiments utilizing the scattering effect of zinc oxide (ZnO) to enhance the photoluminescence (PL) intensity of cesium lead bromide (CsPbBr₃) perovskite quantum dots (QDs). This study involved investigating the method for creating a CsPbBr₃ and ZnO mixture and determining the optimal mixing ratio. A mixture dispersion of CsPbBr₃ and ZnO, prepared at a 1:0.015 weight ratio through shaking, was fabricated into a film using the spin coating method. The PL intensity of this film showed a relative increase of 20% compared to the original CsPbBr₃ QD film without ZnO. The scattering effect of ZnO was confirmed through ultraviolet-visible (UV-Vis) absorption and transient PL experiments, and a long-delayed exciton lifetime was observed in the optimized mixture dispersion thin film. The morphology of the fabricated film was characterized using field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM). For the CsPbBr₃-ZnO mixture (1:0.0015) film, crystal domains of approximately 10 nm were observed using TEM. Through AFM analysis, an excellent film roughness of 4.6 nm was observed, further confirming the potential of perovskite QD/ZnO composite films as promising materials for enhanced photoconversion intensity. In future studies, applying this method to other perovskite materials and metal oxides for the optimization of photoconversion composite materials is expected to enable the fabrication of highly efficient perovskite QD/metal oxide composite films. Full article

Chemoresistive gas sensors are surely one of the easiest and most commonly used methods to monitor the presence of different polluting gases. Nevertheless, there are still several challenges to overcome in order for these sensors to be widely used. In particular, the selectivity and sensitivity of chemoresistive gas sensors towards a wide range of analytes need to be improved. This is why new sensing materials capable of detecting different analytes in a sensitive and selective manner are being investigated. In this regard, this work is focused on the development and characterization of a new sensing material based on the quantum dot (QD) core–shell of CuInS₂/ZnO (CIS-ZO). Optimized films of the QD core–shell of CIS-ZO were integrated into a micro-electromechanical system (MEMS)-based gas sensor platform, showing excellent sensing performance versus different gases and especially towards ethanol (C₂H₅OH). Full article

The energy level offset at inorganic layer–organic layer interfaces and the mismatch of hole/electron mobilities of the individual layers greatly limit the establishment of balanced charge carrier injection inside the emissive layer of halide perovskite light-emitting diodes (PeQLEDs). In contrast with other types of light-emitting devices, namely OLEDs and QLEDs, various techniques such as inserting an electron suppression layer between the emissive and electron transport layer have been employed as a means of establishing charge carrier injection into their respective emissive layers. Hence, in this study, we report the use of a thin layer of Poly(4-vinylpyridine) (PVPy) (an electron suppression material) placed between the emissive and electron transport layer of a halide PeQLEDs fabricated with an inverted configuration. With ZnO as the electron transport material, devices fabricated with a thin PVPy interlayer between the ZnO ETL and CsPbBr₃ -based green QDs emissive layer yielded a 4.5-fold increase in the maximum observed luminance and about a 10-fold increase in external quantum efficiency (EQE) when compared to ones fabricated without PVPy. Furthermore, the concentration and coating process conditions of CsPbBr₃ QDs were altered to produce various thicknesses and film properties which resulted in improved EQE values for devices fabricated with QDs thin films of lower surface root-mean-square (RMS) values. These results show that inhibiting the excessive injection of electrons and adjusting QDs layer thickness in perovskite-inverted QLEDs is an effective way to improve device luminescence and efficiency, thereby improving the carrier injection balance. Full article

While metal oxides such as TiO₂, Fe₂O₃, WO₃, and BiVO₄ have been previously studied for their potential as photoanodes in photoelectrochemical (PEC) hydrogen production, their relatively wide band-gap limits their photocurrent, making them unsuitable for the efficient utilization of incident visible light. To overcome this limitation, we propose a new approach for highly efficient PEC hydrogen production based on a novel photoanode composed of BiVO₄/PbS quantum dots (QDs). Crystallized monoclinic BiVO₄ films were prepared via a typical electrodeposition process, followed by the deposition of PbS QDs using a successive ionic layer adsorption and reaction (SILAR) method to form a p-n heterojunction. This is the first time that narrow band-gap QDs were applied to sensitize a BiVO₄ photoelectrode. The PbS QDs were uniformly coated on the surface of nanoporous BiVO₄, and their optical band-gap was reduced by increasing the number of SILAR cycles. However, this did not affect the crystal structure and optical properties of the BiVO₄. By decorating the surface of BiVO₄ with PbS QDs, the photocurrent was increased from 2.92 to 4.88 mA/cm² (at 1.23 V_RHE) for PEC hydrogen production, resulting from the enhanced light-harvesting capability arising from the narrow band-gap of the PbS QDs. Moreover, the introduction of a ZnS overlayer on the BiVO₄/PbS QDs further improved the photocurrent to 5.19 mA/cm², attributed to the reduction in interfacial charge recombination. Full article

Two-dimensional (2D) organic−inorganic perovskites have great potential for the fabrication of next-generation photodetectors owing to their outstanding optoelectronic features, but their utilization has encountered a bottleneck in anisotropic carrier transportation induced by the unfavorable continuity of the thin films. We propose a facile approach for the fabrication of 0D ZnO quantum dot (QD)/2D (PEA)₂PbI₄ nanosheet hybrid photodetectors under the atmospheric conditions associated with the ZnO QD chloroform antisolvent. Profiting from the antisolvent, the uniform morphology of the perovskite thin films is obtained owing to the significantly accelerated nucleation site formation and grain growth rates, and ZnO QDs homogeneously decorate the surface of (PEA)₂PbI₄ nanosheets, which spontaneously passivate the defects on perovskites and enhance the carrier separation by the well-matched band structure. By varying the ZnO QD concentration, the Ion/Ioff ratio of the photodetectors radically elevates from 78.3 to 1040, and a 12-fold increase in the normalized detectivity is simultaneously observed. In addition, the agglomeration of perovskite grains is governed by the annealing temperature, and the photodetector fabricated at a relatively low temperature of 120 °C exhibits excellent stability after a 50-cycle test in the air condition without any encapsulation. Full article

In this study, a ratiometric optical fiber dissolved oxygen sensor based on dynamic quenching of fluorescence from a ruthenium complex is reported. Tris(4,7-diphenyl-1,10-phenanthrolin) ruthenium(II) dichloride complex (Ru(dpp)₃²⁺) is used as an oxygen-sensitive dye, and semiconductor nanomaterial CdSe/ZnS quantum dots (QDs) are used as a reference dye by mixing the two substances and coating it on the plastic optical fiber end to form a composite sensitive film. The linear relationship between the relative fluorescence intensity of the ruthenium complex and the oxygen concentration is described using the Stern–Volmer equation, and the ruthenium complex doping concentration in the sol-gel film is tuned. The sensor is tested in gaseous oxygen and aqueous solution. The experimental results indicate that the measurement of dissolved oxygen has a lower sensitivity in an aqueous environment than in a gaseous environment. This is due to the uneven distribution of oxygen in aqueous solution and the low solubility of oxygen in water, which results in a small contact area between the ruthenium complex and oxygen in solution, leading to a less-severe fluorescence quenching effect than that in gaseous oxygen. In detecting dissolved oxygen, the sensor has a good linear Stern–Volmer calibration plot from 0 to 18.25 mg/L, the linearity can reach 99.62%, and the sensitivity can reach 0.0310/[O₂] unit. The salinity stability, repeatability, and temperature characteristics of the sensor are characterized. The dissolved oxygen sensor investigated in this research could be used in various marine monitoring and environmental protection applications. Full article

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al₂O₃/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al₂O₃) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs’ trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I–V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were −4.05 and −4.6 V. The on/off ratio at 0.5 V was 2.2 × 10³. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations. Full article

An environment-friendly inverted indium phosphide red quantum dot light-emitting diode (InP QLED) was fabricated using Mg-doped zinc oxide (ZnMgO) as the electron transport layer (ETL). The effects of ZnMgO ETL on the performance of InP QLED were investigated. X-ray diffraction (XRD) analysis indicated that ZnMgO film has an amorphous structure, which is similar to zinc oxide (ZnO) film. Comparison of morphology between ZnO film and ZnMgO film demonstrated that Mg-doped ZnO film remains a high-quality surface (root mean square roughness: 0.86 nm) as smooth as ZnO film. The optical band gap and ultraviolet photoelectron spectroscopy (UPS) analysis revealed that the conduction band of ZnO shifts to a more matched position with InP quantum dot after Mg-doping, resulting in the decrease in turn-on voltage from 2.51 to 2.32 V. In addition, the ratio of irradiation recombination of QLED increases from 7% to 25% using ZnMgO ETL, which can be attributed to reduction in trap state by introducing Mg ions into ZnO lattices. As a result, ZnMgO is a promising material to enhance the performance of inverted InP QLED. This work suggests that ZnMgO has the potential to improve the performance of QLED, which consists of the ITO/ETL/InP QDs/TCTA/MoO₃/Al, and Mg-doping strategy is an efficient route to directionally regulate ZnO conduction bands. Full article

In this work, mesoporous TiO₂-modified ZnO quantum dots (QDs) were immobilised on a linear low-density polyethylene (LLDPE) polymer using a solution casting method for the photodegradation of tetracycline (TC) antibiotics under fluorescent light irradiation. Various spectroscopic and microscopic techniques were used to investigate the physicochemical properties of the floating hybrid polymer film catalyst (8%-ZT@LLDPE). The highest removal (89.5%) of TC (40 mg/L) was achieved within 90 min at pH 9 due to enhanced water uptake by the LDDPE film and the surface roughness of the hybrid film. The formation of heterojunctions increased the separation of photogenerated electron-hole pairs. The QDs size-dependent quantum confinement effect leads to the displacement of the conduction band potential of ZnO QDs to more negative energy values than TiO₂. The displacement generates more reactive species with higher oxidation ability. The highly stable film photocatalyst can be separated easily and can be repeatedly used up to 8 cycles without significant loss in the photocatalytic ability. The scavenging test indicates that the main species responsible for the photodegradation was O₂^●−. The proposed photodegradation mechanism of TC was demonstrated in further detail based on the intermediates detected by LC-time-of-flight/mass spectrometry (LC/TOF-MS). Full article

Here, we report on the high-performance blue quantum dots (QDs) light-emitting diodes (QLEDs), in which the ZnO nanoparticles (NPs) are employed as the electron transport layer (ETL) and optimized with different alcohol solvents. The experimental results demonstrate that the properties of solvent used for ZnO NPs—such as polarity, viscosity and boiling point—play a crucial role in the quality of film where they modulate the electron injection across the QDs/ETL interface. The maximum current efficiency of 3.02 cd/A and external quantum efficiency (EQE) of 3.3% are achieved for blue QLEDs with ZnO NPs dispersed in butanol, exhibiting obvious enhancement compared with the other solvents. This work provides a new method to select proper solvent for ETL which can further improve the device performance. Full article

In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150 °C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure. Full article