Search Results (59)

In this paper, we experimentally investigated the excitation of spoof surface plasmon polaritons (SSPPs) supported by a 1D subwavelength grating with a rectangular profile in the terahertz (THz) frequency range. Using the attenuated total reflection technique and the THz radiation of the Novosibirsk free electron laser, we carried out detailed studies of both angular and gap spectra at several wavelengths. A shallow grating supporting a fundamental mode was fabricated by means of multibeam X-ray lithography and used as a test sample. The results indicated that we achieved 1-THz tunability of resonance in the frequency range from 1.51 to 2.54 THz on a single grating, which cannot be obtained with active tunable metamaterials. The Q factors of the resonances in the angular spectra were within the range of 19.4–37.6, while the resonances of the gap spectra had a Q factor lying within the 1.17–2.03 range. The gap adjustment capability of the setup shown in the work has great potential in modulation of the absorption efficiency, whereas the angular tuning and recording data from each point of the grating will enable real-time monitoring of changes in the surrounding medium. All of this is highly important for enhanced terahertz real-time absorption spectroscopy and imaging. Full article

Calcium fluoride (CaF₂) crystals are widely utilized in deep-ultraviolet (DUV) lithography due to their excellent optical properties. The laser-induced degradation and damage of CaF₂ crystals is a critical concern that restricts its extended application. Impurities of CaF₂ crystal are considered a key factor affecting its laser resistance. Establishing the quantitative relationship and mechanism of impurity content impacting the degradation and damage characteristics of CaF₂ crystal is essential. This study investigated the characteristics of different impurity contents affecting the degradation and laser-induced damage thresholds (LIDTs) of CaF₂ crystals under X-ray and 193 nm pulsed laser irradiations, and quantitatively analyzed the degradation process and mechanism. Our findings demonstrate that impurities at ppm levels significantly diminish the transmittance of CaF₂ crystals across various wavelengths following X-ray irradiation. In contrast, these impurities have a negligible effect on the LIDT test results, suggesting distinct damage mechanisms between X-ray and laser irradiation. This study provides valuable insights for optimizing the CaF₂ crystal fabrication process and enhancing irradiation resistance. Full article

Lithography is crucial to semiconductor manufacturing, enabling the production of smaller, more powerful electronic devices. This review explores the evolution, principles, and advancements of key lithography techniques, including extreme ultraviolet (EUV) lithography, electron beam lithography (EBL), X-ray lithography (XRL), ion beam lithography (IBL), and nanoimprint lithography (NIL). Each method is analyzed based on its working principles, resolution, resist materials, and applications. EUV lithography, with sub-10 nm resolution, is vital for extending Moore’s Law, leveraging high-NA optics and chemically amplified resists. EBL and IBL enable high-precision maskless patterning for prototyping but suffer from low throughput. XRL, using synchrotron radiation, achieves deep, high-resolution features, while NIL provides a cost-effective, high-throughput method for replicating nanostructures. Alignment marks play a key role in precise layer-to-layer registration, with innovations enhancing accuracy in advanced systems. The mask fabrication process is also examined, highlighting materials like molybdenum silicide for EUV and defect mitigation strategies such as automated inspection and repair. Despite challenges in resolution, defect control, and material innovation, lithography remains indispensable in semiconductor scaling, supporting applications in integrated circuits, photonics, and MEMS/NEMS devices. Various molecular strategies, mechanisms, and molecular dynamic simulations to overcome the fundamental lithographic limits are also highlighted in detail. This review offers insights into lithography’s present and future, aiding researchers in nanoscale manufacturing advancements. Full article

The ability to manufacture complex 3D structures with nanometer-scale resolution, such as Fresnel Zone Plates (FZPs), is crucial to achieve state-of-the-art control in X-ray sources for use in a diverse range of cutting-edge applications. This study demonstrates a novel approach combining Electron Beam Lithography (EBL) and cryoetching to produce silicon-based FZP prototypes as a test bench to assess the strong points and limitations of this fabrication method. Through this method, we obtained FZPs with 100 zones, a diameter of 20 µm, and an outermost zone width of 50 nm, resulting in a high aspect ratio that is suitable for use across a range of photon energies. The process incorporates a chromium mask in the EBL stage, enhancing microstructure precision and mitigating pattern collapse challenges. This minimized issues of under- and over-etching, producing well-defined patterns with a nanometer-scale resolution and low roughness. The refined process thus holds promise for achieving improved optical resolution and efficiency in FZPs, making it viable for the fabrication of high-performance, nanometer-scale devices. Full article

Magnetorheological elastomers (MREs) are in demand in the field of high-tech microindustries and nanoindustries such as biomedical applications and soft robotics due to their exquisite magneto-sensitive response. Among various MRE applications, programmable actuators are emerging as promising soft robots because of their combined advantages of excellent flexibility and precise controllability in a magnetic system. Here, we present the development of magnetically programmable soft magnetic microarray actuators through field-induced injection molding using MREs, which consist of styrene-ethylene/butylene styrene (SEBS) elastomer and carbonyl iron powder (CIP). The ratio of the CIP/SEBS matrix was designed to maximize the CIP fraction based on a critical solids loading. Further, as part of the design of the magnetization distribution in micropillar arrays, the magnetorheological response of the molten composites was analyzed using the static and dynamic viscosity results for both the on and off magnetic states, which reflected the particle dipole interaction and subsequent particle alignment during the field-induced injection molding process. To develop a high-aspect-ratio soft magnetic microarray, X-ray lithography was applied to prepare the sacrificial molds with a height-to-width ratio of 10. The alignment of the CIP was designed to achieve a parallel magnetic direction along the micropillar columns, and consequently, the micropillar arrays successfully achieved the uniform and large bending actuation of up to approximately 81° with an applied magnetic field. This study suggests that the injection molding process offers a promising manufacturing approach to build a programmable soft magnetic microarray actuator. Full article

In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face backside layer. This evaluation is made possible by using patterned TLMs (Transmission Line Model) through direct laser writing lithography after locally removing the substrate and buffer layers in order to access the n+-doped backside layer. As deposited non-alloyed metal stack on top of N-polar orientation GaN layer after buffer layers removal results in poor ohmic contact quality. To significantly reduce the related specific contact resistance, an HCl treatment is applied prior to metallization under various time and temperature conditions. A 3 min HCl treatment at 70 °C is found to be the optimum condition to achieve thermally stable high ohmic contact quality. To further understand the impact of the wet treatment, SEM (Scanning Electron Microscopy) and XPS (X-ray Photoelectron Spectroscopy) analyses were performed. XPS revealed a decrease in Ga-O concentration after applying the treatment, reflecting the higher oxidation susceptibility of the N-polar face compared to the Ga-polar face, which was used as a reference. SEM images of the treated samples show the formation of pyramids on the N-face after HCl treatment, suggesting specific wet etching planes of the GaN crystal from the N-face. The size of the pyramids is time-dependent; thus, increasing the treatment duration results in larger pyramids, which explains the degradation of ohmic contact quality after prolonged high-temperature HCl treatment. Full article

Perfluorododecyl iodide (I-PFC12) is of interest for area-selective deposition (ASD) applications as it exhibits intriguing properties such as ultralow surface energy, the ability to modify silicon’s band gap, low surface friction, and suitability for micro-contact patterning. Traditional photolithography is struggling to reach the required critical dimensions. This study investigates the potential of using I-PFC12 as a way to produce contrast between the growth area and non-growth areas of a surface subsequent to extreme ultraviolet (EUV) exposure. Once exposed to EUV, the I-PFC12 molecule should degrade with the help of the photocatalytic substrate, allowing for the subsequent selective deposition of the hard mask. The stability of a vapor-deposited I-PFC12 self-assembled monolayer (SAM) was examined when exposed to ambient light for extended periods of time by using X-ray photoelectron spectroscopy (XPS). Two substrates, SiO₂ and TiO₂, are investigated to ascertain the suitability of using TiO₂ as a photocatalytic active substrate. Following one month of exposure to light, the atomic concentrations showed a more substantial fluorine loss of 10.2% on the TiO₂ in comparison to a 6.2% loss on the SiO₂ substrate. This more pronounced defluorination seen on the TiO₂ is attributed to its photocatalytic nature. Interestingly, different routes to degradation were observed for each substrate. Reference samples preserved in dark conditions with no light exposure for up to three months show little degradation on the SiO₂ substrate, while no change is observed on the TiO₂ substrate. The results reveal that the I-PFC12 SAM is an ideal candidate for resistless EUV lithography. Full article

Nanostructures synthesised by hard-templating assisted methods are advantageous as they retain the size and morphology of the host templates which are vital characteristics for their intended applications. A number of techniques have been employed to deposit materials inside porous templates, such as electrodeposition, vapour deposition, lithography, melt and solution filling, but most of these efforts have been applied with pore sizes higher in the mesoporous regime or even larger. Here, we explore atomic layer deposition (ALD) as a method for nanostructure deposition into mesoporous hard templates consisting of mesoporous silica films with sub-5 nm pore diameters. The zinc oxide deposited into the films was characterised by small-angle X-ray scattering, X-ray diffraction and energy-dispersive X-ray analysis. Full article

This paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specific emphasis on critical parameters such as film formation, sensitivity, resolution, solubility, and edge roughness. These lithographic systems encompass X-ray lithography (XRL), deep ultraviolet nanoimprint lithography (DUV-NIL), extreme ultraviolet lithography (EUV), and guided self-assembled lithography (DSA). The principal objective of this paper is to furnish valuable insights into the development and utilization of POSS-based photoresist materials in diverse lithographic contexts. Full article

Piezoelectric thin films are extensively used as sensing or actuating layers in various micro-electromechanical systems (MEMS) applications. However, most piezoelectrics are stiff ceramics, and current polymer piezoelectrics are not compatible with microfabrication due to their low Curie Temperature. Recent polymer-composite piezoelectrics have gained interest but can be difficult to pattern. Photodefinable piezoelectric films could resolve these challenges by reducing the manufacturability steps by eliminating the etching process. But they typically have poor resolution and thickness properties. This study explores methods of enhancing the manufacturability of piezoelectric composite films by optimizing the process parameters and synthesis of SU-8 piezo-composite materials. Piezoelectric ceramic powders (barium titanate (BTO) and lead zirconate titanate (PZT)) were integrated into SU-8, a negative epoxy-based photoresist, to produce high-resolution composites in a non-cleanroom environment. I-line (365 nm) light was used to enhance resolution compared to broadband lithography. Two variations of SU-8 were prepared by thinning down SU-8 3050 and SU-8 3005. Different weight percentages of the piezoelectric powders were investigated: 5, 10, 15 and 20 wt.% along with varied photolithography processing parameters. The composites’ transmittance properties were characterized using UV-Vis spectroscopy and the films’ crystallinity was determined using X-ray diffraction (XRD). The 0–3 SU-8/piezo composites demonstrated resolutions < 2 μm while maintaining bulk piezoelectric coefficients d₃₃ > 5 pm V⁻¹. The films were developed with thicknesses >10 μm. Stacked layers were achieved and demonstrated significantly higher d₃₃ properties. Full article

Recently, considerable work has been directed at the development of an ultracompact X-ray free-electron laser (UCXFEL) based on emerging techniques in high-field cryogenic acceleration, with attendant dramatic improvements in electron beam brightness and state-of-the-art concepts in beam dynamics, magnetic undulators, and X-ray optics. A full conceptual design of a 1 nm (1.24 keV) UCXFEL with a length and cost over an order of magnitude below current X-ray free-electron lasers (XFELs) has resulted from this effort. This instrument has been developed with an emphasis on permitting exploratory scientific research in a wide variety of fields in a university setting. Concurrently, compact FELs are being vigorously developed for use as instruments to enable next-generation chip manufacturing through use as a high-flux, few nm lithography source. This new role suggests consideration of XFELs to urgently address emerging demands in the semiconductor device sector, as identified by recent national need studies, for new radiation sources aimed at chip manufacturing. Indeed, it has been shown that one may use coherent X-rays to perform 10–20 nm class resolution surveys of macroscopic, cm scale structures such as chips, using ptychographic laminography techniques. As the XFEL is a very promising candidate for realizing such methods, we present here an analysis of the issues and likely solutions associated with extending the UCXFEL to harder X-rays (above 7 keV), much higher fluxes, and increased levels of coherence, as well as methods of applying such a source for ptychographic laminography to microelectronic device measurements. We discuss the development path to move the concept to rapid realization of a transformative XFEL-based application, outlining both FEL and metrology system challenges. Full article

This study evaluates the practical feasibility of using powdered cellulose microblasting for dry cleaning paper-based printed artworks in a real setting of conservation treatment. The control parameters used for this purpose are the potential morphological changes in the surface, the level of cleanliness achieved, and the amount of residue remaining in the artwork after the treatment. In this study, cleaning of a lithography was conducted entirely with powdered cellulose microblasting. The outcomes were evaluated before and after treatment using optical microscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and spectrophotometry. The results indicate that powdered cellulose microblasting is a feasible and efficient technique for conducting the dry cleaning of printed works on paper without causing morphological changes to their surface. Additionally, it offers significant benefits by enabling precise treatment control, reducing cleaning time, and using materials stable in the long term and compatible with the substrate. Moreover, it mitigates the long-term negative effects caused by synthetic polymer residues from the cleaning materials commonly used in the dry cleaning of paper. Full article

In order to develop the building blocks for future biosensing and spintronic applications, an engraving technique using electron beam lithography is employed in order to develop nanomagnetic pre-patterned structures with logic potential. The paper describes the realization and morphological and magnetic characterization of potentially logic-conditioned substrates, a building block to be further used as an integration platform upon which nanodevices, such as magnetic wires, or various geometrical shapes, circles, triangles, can be considered as pre-requisite for full integration into logic devices. As a proof of concept, regular arrays of FePt circles or magnetic dots were devised and structural characterization by X-ray diffraction and transmission electron microscopy proved the occurrence of the tetragonal L1₀ phase. Moreover, the magnetic characterization provided more insight into the potential of such arrays of magnetic devices as the hysteresis provided good values of magnetic coercivity, remanent and saturation magnetization. These findings show good potential for developing regular arrays of uniformly shaped magnetic entities with encouraging magnetic performances in view of potential applications in various applications. Full article

Nano-logic magnetic structures are of great interest for spintronic applications. While the methods used for developing arrays of magnetic L1₀-phase dots are, in most cases, based on deposition followed by annealing at high temperatures, usually around 700 °C, we demonstrate here a technique where a much lower annealing temperature (i.e., 400 °C) is needed in order to promote fully the disorder–order phase transformation and achievement of highly coercive L1₀-phase dots. In order to develop building blocks based on arrays of L1₀-phase FePt dots for further spintronic applications, an engraving technique using electron beam lithography is employed. This paper describes the fabrication, as well as the morphological and magnetic characterization, of regularly placed FePt dots of various shapes, as pre-requisites for integration into nano-logic devices. As a proof of concept, regular arrays of FePt circular dots were devised and their structural characterization, using X-ray diffraction (XRD) and transmission electron microscopy (TEM), was performed. It has been shown that annealing at only 400 °C for 30 min proved the occurrence of the tetragonal L1₀ phase. Moreover, structural characterization showed that the disorder–order phase transformation was complete with only the L1₀ phase detected in high resolution TEM. The magnetic characterization provided more insight into the potential of such arrays of magnetic devices with convenient values of magnetic coercivity, remanent and saturation magnetization. These findings show good potential for developing regular arrays of uniformly shaped magnetic entities with encouraging magnetic performances in view of various applications. Full article

The concept of dense and hot plasmas can be used to build up powerful and brilliant radiation sources in the soft X-ray and extreme ultraviolet spectral range. Such sources are used for nanoscale imaging and structuring applications, such as EUV lithography in the semiconductor industry. An understanding of light-generating atomic processes and radiation transport within the plasma is mandatory for optimization. The basic principles and technical concepts using either a pulsed laser or a gas discharge for plasma generation are presented, and critical aspects in the ionization dynamics are outlined within the framework of a simplified atomic physics model. Full article