Search Results (19)

Multifunctional coatings based on Sn-Ni materials with and without titanium oxide nanoparticles (TiO₂NPs) incorporation were prepared using the electrochemical deposition technique at 70 °C. TiO₂NPs were dispersed in the electrolyte bath, and their influence on the surface texture, crystalline phase, and properties was investigated. Various techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray microanalysis (EDX) were used to characterize the prepared coatings. The formation mechanism of the deposited coatings has been demonstrated to be consistent with the electrochemical behavior of instantaneous growth, and the three-dimensional growth is controlled by diffusion phenomena. The anticorrosion effectiveness of the coatings was assessed using potentiodynamic polarization curves and electrochemical impedance spectroscopy in an artificial sweat medium, while the bactericidal activity of the composite coatings (the ability to induce cell death) was evaluated in accordance with the ISO 27447:2019 test. The influence of TiO₂NPs at a low concentration of 1 g/L on the composition, structure, and properties of the deposited coatings was demonstrated. Particular attention was paid to the relationship between the anticorrosive and bactericidal properties of the coatings and their structure composition and wetting properties. The synergistic effect of chemical composition and surface-wetting properties has been demonstrated to enhance the anticorrosive and bactericidal properties of the prepared coatings. Full article

A series of carbon black-supported 7.5 wt.% Pd-2.5 wt.% M/C (M: Ag, Ca, Co, Cu, Fe, Ni, Ru, Sn, Zn) electrocatalysts, synthesized via the wet impregnation method, and reduced at 300 °C, were compared in terms of their hydrogen oxidation reaction (HOR) activity in a 0.1 M KOH solution using the thin-film rotating-disk electrode technique. Moreover, 10 wt.% Pd/C and 10 wt.% Pt/C electrocatalysts were prepared in the same manner and used as references. The 7.5 wt.% Pd-2.5 wt.% Ni/C electrocatalyst exhibited the highest HOR activity among the Pd-based electrocatalysts, although it was lower than that of the 10 wt.% Pt/C. Its activity was also found to be higher than that of Pd-Ni electrocatalysts of the same total metal loading (10 wt.%) and reduction temperature (300 °C) but of different Pd to Ni atomic ratio. It was also higher than that of 7.5 wt.% Pd-2.5 wt.% Ni/C electrocatalysts that were reduced at temperatures other than 300 °C. The superior activity of this electrocatalyst was attributed to an optimum value of the hydrogen binding energy of Pd, which was induced by the presence of Ni (electronic effect), as well as to the oxophilic character of Ni, which favors adsorption on the Ni surface of hydroxyl species that readily react with adsorbed hydrogen atoms on neighboring Pd sites in the rate-determining step. Full article

The long-term stability of energy-storage devices for green energy has received significant attention. Lithium-ion batteries (LIBs) based on materials such as metal oxides, Si, Sb, and Sn have shown superior energy density and stability owing to their intrinsic properties and the support of conductive carbon, graphene, or graphene oxides. Abnormal capacities have been recorded for some transition metal oxides, such as NiO, Fe₂O₃, and MnO/Mn₃O₄. Recently, the restructuring of NiO into LiNiO₂ anode materials has yielded an ultrastable anode for LIBs. Herein, the effect of the thin film thickness on the restructuring of the NiO anode was investigated. Different electrode thicknesses required different numbers of cycles for restructuring, resulting in significant changes in the reconstituted cells. NiO thicknesses greater than 39 μm reduced the capacity to 570 mAh g⁻¹. The results revealed the limitation of the layered thickness owing to the low diffusion efficiency of Li ions in the thick layers, resulting in non-uniformity of the restructured LiNiO₂. The NiO anode with a thickness of approximately 20 μm required only 220 cycles to be restructured at 0.5 A g⁻¹, while maintaining a high-rate performance for over 500 cycles at 1.0 A g⁻¹, and a high capacity of 1000 mAh g⁻¹. Full article

Terahertz absorbers have been extensively investigated by researchers due to their applications in thermophotovoltaic energy conversion and sensors, but a key factor limiting their development is the lack of vital and versatile materials. Ferromagnetic shape memory alloys (FSMAs) offer a novel remedy for tunable metamaterials due to their brilliant recovery of deformation, remote control, and transient response. In this study, we propose a tunable absorber based on magnetic field tuning, consisting of Ni–Mn–Sn ferro-magnetic shape memory alloy films in fractal geometry and optically excited Si plates. Numerical analysis shows that the proposed absorber has an absorbance bandwidth of 1.129 THz above 90% between 1.950 THz and 3.079 THz. The absorber geometry can be regulated by an external magnetic field, allowing dynamic switching between broadband and narrowband absorption modes, the latter showing an ultra-narrow bandwidth and a high-quality factor Q of ~25.8. The proposed terahertz absorber has several advantages over current state-of-the-art bifunctional absorbers, including its ultra-thin structure of 10.39 μm and an additional switching function. The absorption can be continuously tuned from 90% to 5% when the light-excited silicon plate is transferred from the insulator state to the metal state. This study presents a promising alternative strategy for developing actively regulated and versatile terahertz-integrated devices. Full article

This review addresses the importance of Zn for obtaining multifunctional materials with interesting properties by following certain preparation strategies: choosing the appropriate synthesis route, doping and co-doping of ZnO films to achieve conductive oxide materials with p- or n-type conductivity, and finally adding polymers in the oxide systems for piezoelectricity enhancement. We mainly followed the results of studies of the last ten years through chemical routes, especially by sol-gel and hydrothermal synthesis. Zinc is an essential element that has a special importance for developing multifunctional materials with various applications. ZnO can be used for the deposition of thin films or for obtaining mixed layers by combining ZnO with other oxides (ZnO-SnO₂, ZnO-CuO). Also, composite films can be achieved by mixing ZnO with polymers. It can be doped with metals (Li, Na, Mg, Al) or non-metals (B, N, P). Zn is easily incorporated in a matrix and therefore it can be used as a dopant for other oxidic materials, such as: ITO, CuO, BiFeO_3, and NiO. ZnO can be very useful as a seed layer, for good adherence of the main layer to the substrate, generating nucleation sites for nanowires growth. Thanks to its interesting properties, ZnO is a material with multiple applications in various fields: sensing technology, piezoelectric devices, transparent conductive oxides, solar cells, and photoluminescence applications. Its versatility is the main message of this review. Full article

Today, an actual task of photovoltaics is the search for new light-absorbing materials for solar cells, which will make them more efficient and economically affordable. Semiconductor Cu₂NiSn(S,Se)₄ (CNTSSe) thin films are promising materials due to suitable optical and electrical properties. This compound consists of abundant, inexpensive, and low-toxicity elements. However, few results of studying the properties of CNTSSe films have been presented in the literature. This paper presents the results of studying the morphology, phase composition, and crystal structure of the CNTSSe films, which were first obtained by high-temperature annealing of electrodeposited Ni/Cu/Sn/Ni precursors on glass/Mo substrates in chalcogen vapor. The films were studied using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. It has been found that sequential electrochemical deposition makes it possible to obtain the Ni/Cu/Sn/Ni precursors of the required quality for further synthesis of the films. It is shown that high-temperature annealing in chalcogen vapor in air makes it possible to synthesize stable polycrystalline CNTSSe films. The obtained results confirm that the production of CNTSSe films is suitable for use in solar cells by the proposed method, which can be improved by more precise control of the precursor composition and annealing conditions. Full article

Sn is a promising candidate anode material with a high theoretical capacity (994 mAh/g). However, the drastic structural changes of Sn particles caused by their pulverization and aggregation during charge–discharge cycling reduce their capacity over time. To overcome this, a TiNi shape memory alloy (SMA) was introduced as a buffer matrix. Sn/TiNi SMA multilayer thin films were deposited on Cu foil using a DC magnetron sputtering system. When the TiNi alloy was employed at the bottom of a Sn thin film, it did not adequately buffer the volume changes and internal stress of Sn, and stress absorption was not evident. However, an electrode with an additional top layer of room-temperature-deposition TiNi (TiNi(RT)) lost capacity much more slowly than the Sn or Sn/TiNi electrodes, retaining 50% capacity up to 40 cycles. Moreover, the charge-transfer resistance decreased from 318.1 Ω after one cycle to 246.1 Ω after twenty. The improved cycle performance indicates that the TiNi(RT) and TiNi-alloy thin films overall held the Sn thin film. The structure was changed so that Li and Sn reacted well; the stress-absorption effect was observed in the TiNi SMA thin films. Full article

Currently, hydrogen generation via photocatalytic water splitting using semiconductors is regarded as a simple environmental solution to energy challenges. This paper discusses the effects of the doping of noble metals, Ir (3.0 at.%) and Ni (1.5–4.5 at.%), on the structure, morphology, optical properties, and photoelectrochemical performance of sol-gel-produced SnO₂ thin films. The incorporation of Ir and Ni influences the position of the peaks and the lattice characteristics of the tetragonal polycrystalline SnO₂ films. The films have a homogeneous, compact, and crack-free nanoparticulate morphology. As the doping level is increased, the grain size shrinks, and the films have a high proclivity for forming Sn–OH bonds. The optical bandgap of the un-doped film is 3.5 eV, which fluctuates depending on the doping elements and their ratios to 2.7 eV for the 3.0% Ni-doped SnO₂:Ir Photoelectrochemical (PEC) electrode. This electrode produces the highest photocurrent density (J_ph = 46.38 mA/cm²) and PEC hydrogen production rate (52.22 mmol h⁻¹cm⁻² at −1V), with an Incident-Photon-to-Current Efficiency (IPCE% )of 17.43% at 307 nm. The applied bias photon-to-current efficiency (ABPE) of this electrode is 1.038% at −0.839 V, with an offset of 0.391% at 0 V and 307 nm. These are the highest reported values for SnO₂-based PEC catalysts. The electrolyte type influences the J_ph values of photoelectrodes in the order J_ph(HCl) > J_ph(NaOH) > J_ph(Na₂SO₄). After 12 runs of reusability at −1 V, the optimized photoelectrode shows high stability and retains about 94.95% of its initial PEC performance, with a corrosion rate of 5.46 nm/year. This research provides a novel doping technique for the development of a highly active SnO₂-based photoelectrocatalyst for solar light-driven hydrogen fuel generation. Full article

We investigated the photochromic (PC) and electrochromic (EC) properties of tin-doped nickel oxide (NiO) thin films for solution-processable all-solid-state EC devices. The PC effect is shown to be enhanced by the addition of Sn into the precursor NiO solution. We fabricated an EC device with six layers—ITO/TiO₂ (counter electrode)/SnO₂ (ion-conducting layer)/SiO₂ (barrier)/NiO doped with tin (EC layer)/ITO—by a hybrid fabrication process (sputtering for ITO and TiO₂, sol–gel spin coating for SnO₂ and NiO). The EC effect was also observed to be improved with the Sn-doped NiO layer. It was demonstrated that UV/O₃ treatment is one of the critical processes that determine the EC performance of the hydroxide ion-based device. UV/O₃ treatment generates hydroxide ions, induces phase separation from a single mixture of SnO₂ and silicone oil, and improves the surface morphology of the films, thereby boosting the performance of EC devices. EC performance can be enhanced further by optimizing the thickness of TiO₂ and SiO₂ layers. Specifically, the SiO₂ barrier blocks the transport of charges, bringing in an increase in anodic coloration. We achieved the transmittance modulation of 38.3% and the coloration efficiency of 39.7 cm²/C. We also evaluated the heat resistance of the all-solid-state EC device and found that the transmittance modulation was decreased by 36% from its initial value at 100 °C. Furthermore, we demonstrated that a large-area EC device can be fabricated using slot-die coating without much compromise on EC performance. Full article

A thin film sensor based on tetragonal SnO₂ nanoparticles was fabricated by combining the sol–gel method and a dip-coating technique on a cylindrical glass substrate. The sensing material was produced through a cycling annealing process at 400 and 600 °C, using tin chloride (IV) pentahydrate as a precursor in polyethylene glycol (PEG) solution as a surfactant. Materials were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), revealing tetragonal phase formation with no impurities. The sensor′s assembly was done with low-cost materials such as Cu electrodes, Cu-Ni tube pins, and glass-reinforced epoxy laminate as the base material. For signal variation, an adequate voltage divider circuit was used to detect ethanol′s presence on the surface of the sensor. The fabricated sensor response to gaseous ethanol at its operating temperature at ambient pressure is comparable to that of a commercial sensor, with the advantage of detecting ethanol at lower temperatures. The sensor response (S = Ra/Rg) to 40 ppm of ethanol at 120 °C was 7.21. A reported mathematical model was used to fit the data with good results. Full article

The phenomenon of magnetic resonance and its detection via microwave spectroscopy provide insight into the magnetization dynamics of bulk or thin film materials. This allows for direct access to fundamental properties, such as the effective magnetization, g-factor, magnetic anisotropy, and the various damping (relaxation) channels that govern the decay of magnetic excitations. Cavity-based and broadband ferromagnetic resonance techniques that detect the microwave absorption of spin systems require a minimum magnetic volume to obtain a sufficient signal-to-noise ratio (S/N). Therefore, conventional techniques typically do not offer the sensitivity to detect individual micro- or nanostructures. A solution to this sensitivity problem is the so-called planar microresonator, which is able to detect even the small absorption signals of magnetic nanostructures, including spin-wave or edge resonance modes. As an example, we describe the microresonator-based detection of spin-wave modes within microscopic strips of ferromagnetic A2 Fe₆₀Al₄₀ that are imprinted into a paramagnetic B2 Fe₆₀Al₄₀-matrix via focused ion-beam irradiation. While microresonators operate at a fixed microwave frequency, a reliable quantification of the key magnetic parameters like the g-factor or spin relaxation times requires investigations within a broad range of frequencies. Furthermore, we introduce and describe the step from microresonators towards a broadband microantenna approach. Broadband magnetic resonance experiments on single nanostructured magnetic objects in a frequency range of 2–18 GHz are demonstrated. The broadband approach has been employed to explore the influence of lateral structuring on the magnetization dynamics of a Permalloy (Ni₈₀Fe₂₀) microstrip. Full article

In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μ_FE), a lower subthreshold swing (SS), a positively shifted threshold voltage (V_TH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μ_FE, higher SS, negatively shifted V_TH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs. Full article

We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm²·V⁻¹·s⁻¹. The increase in mobility was more significant as the length of Ni capping layer increased and the thickness of SnO active layer decreased. The observed phenomenon was possibly attributed to the changed vertical electric field distribution and increased hole concentration in the SnO channel by the floating Ni capping layer. Our experimental results demonstrate that incorporating the floating Ni capping layer on the channel layer is an effective method for increasing the field-effect mobility in p-channel SnO TFTs. Full article

The implementation of thermal barriers in thermoelectric materials improves their power conversion rates effectively. For this purpose, material boundaries are utilized and manipulated to affect phonon transmissivity. Specifically, interface intermixing and topography represents a useful but complex parameter for thermal transport modification. This study investigates epitaxial thin film multilayers, so called superlattices (SL), of TiNiSn/HfNiSn, both with pristine and purposefully deteriorated interfaces. High-resolution transmission electron microscopy and X-ray diffractometry are used to characterize their structural properties in detail. A differential 3 $\omega$ -method probes their thermal resistivity. The thermal resistivity reaches a maximum for an intermediate interface quality and decreases again for higher boundary layer intermixing. For boundaries with the lowest interface quality, the interface thermal resistance is reduced by 23% compared to a pristine SL. While an uptake of diffuse scattering likely explains the initial deterioration of thermal transport, we propose a phonon bridge interpretation for the lowered thermal resistivity of the interfaces beyond a critical intermixing. In this picture, the locally reduced acoustic contrast of the less defined boundary acts as a mediator that promotes phonon transition. Full article

Due to the rapid increase in current density encountered in new chips, the phenomena of thermomigration and electromigration in the solder bump become a serious reliability issue. Currently, Ni or TiN, as a barrier layer, is widely academically studied and industrially accepted to inhibit rapid copper diffusion in interconnect structures. Unfortunately, these barrier layers are polycrystalline and provide inadequate protection because grain boundaries may presumably serve as fast diffusion paths for copper and could react to form Cu–Sn intermetallic compounds (IMCs). Amorphous metallic films, however, have the potential to be the most effective barrier layer for Cu metallization due to the absence of grain boundaries and immiscibility with copper. In this article, the diffusion properties, the strength of the interface between polycrystalline and amorphous ZrCuNiAl thin film, and the effects of quenching rate on the internal microstructures of amorphous metal films were individually investigated by molecular dynamics (MD) simulation. Moreover, experimental data of the diffusion process for three different cases, i.e., without barrier layer, with an Ni barrier layer, and with a Zr₅₃Cu₃₀Ni₉Al₈ thin film metallic glass (TFMG) barrier layer, were individually depicted. The simulation results show that, for ZrCuNiAl alloy, more than 99% of the amorphous phase at a quenching rate between 0.25 K/ps and 25 K/ps can be obtained, indicating that this alloy has superior glass-forming ability. The simulation of diffusion behavior indicated that a higher amorphous ratio resulted in better barrier performance. Moreover, a very small and uniformly distributed strain appears in the ZrCuNiAl layer in the simulation of the interfacial tension test; however, almost all the voids are initiated and propagated in the Cu layer. These phenomena indicate that the strength of the ZrCuNiAl/Cu interface and ZrCuNiAl layer is greater than polycrystalline Cu. Experimental results show that the Zr₅₃Cu₃₀Ni₉Al₈ TFMG layer exhibits a superior barrier effect. Almost no IMCs appear in this TFMG barrier layer even after aging at 125 °C for 500 h. Full article