Search Results (39)

Extreme ultraviolet (EUV) pellicles must exhibit high optical transmittance, thermal, and mechanical stability to withstand the demands of semiconductor fabrication. ZrSi₂ has attracted attention as a pellicle material due to its excellent optical characteristics. The thickness of ZrSi₂ films is being reduced to enhance EUV transmittance (EUVT). Since the mechanical strength of nanoscale thin films can be influenced by grain-size effects described by either the Hall–Petch or inverse Hall–Petch relationship, grain-size control becomes critical. In this study, ZrSi₂/SiN_x free-standing membranes with different ZrSi₂ grain sizes were fabricated by sputter deposition followed by annealing at 425–600 °C. Grazing incidence X-ray diffraction analysis confirmed that the ZrSi₂ thin films retained their orthorhombic structure up to 600 °C. Scanning transmission electron microscopy showed a gradual increase in grain size with increasing annealing temperature. EUVT remained almost unchanged regardless of the ZrSi₂ grain size. In contrast, the ultimate tensile strength increased with grain size up to 64 nm and decreased with further grain growth. These results indicate that although the optical properties of ZrSi₂-based EUV pellicles are grain-size independent, their mechanical strength can be optimized through microstructural engineering, consistent with the Hall–Petch relationship. Full article

Suspended microchannel resonators (SMRs) are powerful tools for mass, density, and viscosity sensing. Among various transduction methods, full piezoelectric transduction offers key advantages, including on-chip integration, low energy dissipation, and linear response. This work explores sub-200 nm Al_0.6Sc_0.4N thin films for SMR transduction, benchmarking them against their well-established AlN predecessor. By integrating the piezoelectric stack into low-stress silicon nitride (ls-SiN_x) beam resonators, we investigate the impact of bottom electrode design, photoresist removal prior to deposition, and deposition bias on film quality. Characterization includes X-ray diffraction (XRD), scanning electron microscopy (SEM), d₃₁ piezoelectric coefficient, relative dielectric permittivity, and breakdown field measurements. Results illustrate the impacts of the studied parameters and demonstrate a fourfold increase in d₃₁, compared to AlN, confirming the strong potential of Al_0.6Sc_0.4N for high-performance SMR transduction. Full article

This study investigates the mechanical and optical characteristics of silicon nitride thin films deposited with PECVD at 80 °C for tunable silicon-rich SiN_x-SiO_y-based MEMS optical cavities. Varying the deposition parameters using SiH₄ and N₂ as precursor gases for silicon-rich SiN_x thin films allows us to tune the refractive index to a value as high as 2.40 ± 0.013 at an extinction coefficient of only 0.008, an extremely low surface roughness of only 0.26 nm, and a compressive stress of about 150 MPa. We deposited 6.5-layer pairs of silicon-rich SiN_x/SiO_y-distributed Bragg reflector (DBR) micro-electro-mechanical system (MEMS) mirror that covers the whole 1300 and 1550 nm range. Cavity architectures of 6.5 top and 6 bottom layer-pairs were fabricated in the clean room providing a variety of cavity lengths between 0.615 µm and 2.85 µm. These lengths were then simulated in order to estimate the Young’s Modulus of silicon-rich SiN_x, obtaining values from 56 to 92 GPa. One of the designs was characterised electro-thermally providing a tuning range of at least 86.7 nm centred at 1585 nm. The tunable filters are well suitable for implementation as tuning element in lasers for optical coherence tomography. Full article

Silicon nitride (SiN_x) thin film is a promising coating with great physiochemical and optical properties. However, the preparation of films with good comprehensive properties still faces challenges. This study focused on developing a method for the preparation of uniform SiN_x thin film with a controllable refractive index using home-made catalytic chemical vapor deposition (Cat-CVD) equipment. Orthogonal experimental design was employed to investigate the effects of four key influence factors, including reaction pressure, the ratio of SiH₄ to NH₃, the ratio of SiH₄ to H₂, and substrate temperature. The response parameters evaluated were the refractive index, extinction coefficient, uniformity, and deposition rate of SiN_x thin film. Compared with the single-factor variable tests, an orthogonal experiment could obtain the optimal preparation process of the SiN_x thin film with the best comprehensive quality through the least number of experiments. At the same time, the microstructures of SiN_x thin film were analyzed by various characterization methods, including Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), to research the relationship between preparation factors and the properties of SiN_x thin film. This paper provides the theoretical guidance for fine-regulating the properties of SiNx thin film in practical applications. Full article

Fabry–Perot interferometers (FPIs), comprising foundry-compatible dielectric thin films on sapphire wafer substrates, were investigated for possible use in chemical sensing. Specifically, structures comprising two vertically stacked distributed Bragg reflectors (DBRs), with the lower DBR between a sapphire substrate and a silicon-oxide (SiO₂) resonator layer and the other DBR on top of this resonator layer, were investigated for operation in the near-ultraviolet (near-UV) range. The DBRs are composed of a stack of nitride-rich silicon-nitride (SiN_x) layers for the higher index and SiO₂ layers for the lower index. An exemplary application would be formaldehyde detection at sub-ppm concentrations in air, using UV absorption spectroscopy in the 300–360 nm band, while providing spectral selectivity against the main interfering gases, notably NO₂ and O₃. Although SiN_x thin films are conventionally used only for visible and near-infrared optical wavelengths (above 450 nm) because of high absorbance at lower wavelengths, this work shows that nitride-rich SiN_x is suitable for near-UV wavelengths. The interplay between spectral absorbance, transmittance and reflectance in a FPI is presented in a comparative study between one FPI design using stoichiometric material (Si₃N₄) and two designs based on N-rich compositions, SiN_1.39 and SiN_1.49. Spectral measurements confirm that if the design accounts for phase penetration depth, sufficient performance can be achieved with the SiN_1.49-based FPI design for gas absorption spectroscopy in near-UV, with peak transmission at 330 nm of 64%, a free spectral range (FSR) of 20 nm and a full-width half-magnitude spectral resolution (FWHM) of 2 nm. Full article

Cu-Al-Ni is a high-temperature shape memory alloy (HTSMA) with exceptional thermomechanical properties, making it an ideal active material for engineering new technologies able to operate at temperatures up to 200 °C. Recent studies revealed that these alloys exhibit a robust superelastic behavior at the nanometer scale, making them excellent candidates for developing a new generation of micro-/nano-electromechanical systems (MEMS/NEMS). The very large-scale integration (VLSI) technologies used in microelectronics are based on thin films. In the present work, 1 μm thickness thin films of 84.1Cu-12.4 Al-3.5Ni (wt.%) were obtained by solid-state diffusion from a multilayer system deposited on SiNx (200 nm)/Si substrates by e-beam evaporation. With the aim of evaluating the thermal stability of such HTSMA thin films, heating experiments were performed in situ inside the transmission electron microscope to identify the temperature at which the material was decomposed by precipitation. Their microstructure, compositional analysis, and phase identification were characterized by scanning and transmission electron microscopy equipped with energy dispersive X-ray spectrometers. The nucleation and growth of two stable phases, Cu-Al-rich alpha phase and Ni-Al-rich intermetallic, were identified during in situ heating TEM experiments between 280 and 450 °C. These findings show that the used production method produces an HTSMA with high thermal stability and paves the road for developing high-temperature MEMS/NEMS using shape memory and superelastic technologies. Full article

In recent years, researchers have placed great importance on the use of silicon (Si)-related materials as efficient light sources for the purpose of realizing Si-based monolithic optoelectronic integration. Previous works were mostly focused on Si nanostructured materials, and, so far, exciting results from Si-based compounds are still lacking. In this paper, we have systematically demonstrated the high photoluminescence external quantum efficiency (PL EQE) and internal quantum efficiency (PL IQE) of amorphous silicon oxynitride (a-SiN_xO_y) systems. Within an integration sphere, we directly measured the PL EQE values of a-SiN_xO_y, which ranged from approximately 2% to 10% in the visible range at room temperature. Then, we calculated the related PL IQE through temperature-dependent PL measurements. The obtained PL IQE values (~84% at 480 nm emission peak wavelength) were very high compared with those of reported Si-based luminescent thin films. We also calculated the temperature-dependent PL EQE values of a-SiN_xO_y systems, and discussed the related PL mechanisms. Full article

The effect of a-SiC_xN_y:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH₄, CH₄, and NH₃ as the precursors, on the stability and photoluminescence of CsPbBr₃ quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr₃ QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr₃ QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr₃ QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 °C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr₃ QD thin films, thus holding potential for future developments in optoelectronic devices. Full article

Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed significant technological potential such as integrated circuits, conformable sensors, and display backplanes. However, the long-term environmental stability of the pSWCNT-TFTs hinders their commercialization. Thus, to extend the stability of the pSWCNT-TFTs, such devices should be passivated with low water and oxygen permeability. Herein, we introduced the silicon nitride (SiNx) passivation method on the pSWCNT-TFTs via a combination of roll-to-roll (R2R) gravure and the roll-to-roll plasma-enhanced vapor deposition (R2R-PECVD) process at low temperature (45 °C). We found that SiNx-passivated pSWCNT-TFTs showed ± 0.50 V of threshold voltage change at room temperature for 3 days and ±1.2 V of threshold voltage change for 3 h through a Temperature Humidity Test (85/85 test: Humidity 85%/Temperature 85 °C) for both p-type and n-type pSWCNT-TFTs. In addition, we found that the SiNx-passivated p-type and n-type pSWCNT-TFT-based CMOS-like ring oscillator, or 1-bit code generator, operated well after the 85/85 test for 24 h. Full article

The extreme ultraviolet (EUV) pellicle is a freestanding membrane that protects EUV masks from particle contamination during EUV exposure. Although a high EUV transmittance of the pellicle is required to minimize the loss of throughput, the degradation of EUV transmittance during the extended exposure of the pellicle has been recently reported. This may adversely affect the throughput of the lithography process. However, the cause of this phenomenon has not yet been clarified. Therefore, we investigated the cause of the degradation in the EUV transmittance by observing the compositional change when the Ru/SiN_x pellicle composite was heated in an emulated EUV scanner environment. The Ru thin film that was deposited at high pressure had more void networks but was not oxidized, whereas the SiN_x thin film was oxidized after heating. This was because the void network in the Ru thin film served as a preferential diffusion path for oxygen and caused oxidation of the SiN_x thin film. It was confirmed that the degradation of the EUV transmittance was due to the oxidation of SiN_x. The results verified the effect of diffusivity in the thin film due to the void network on oxidation and EUV transmittance. Full article

The use of thin metallic layers at the thickness limit where transparency or spectral selectivity are achieved is gaining increased interest. The use of cheap and abundant materials is desirable in the attempt to avoid environment or economical costs. The use of Cu as a replacement for Ag as a heat reflector is one of the solutions that can be employed. The stability over time is a known issue, copper being prone to atmospheric oxidation and degradation. In this contribution, the stability of Cu obtained by magnetron sputtering is investigated, using both DC and HiPIMS processes for obtaining the Cu thin films. The bias voltage is used to obtain thin films with different properties, their time stability being investigated through the variation of spectrophotometric curves. The best performing thin films are evaluated in theoretical heat reflector structures, using SiN_x of different qualities as dielectric layers to form the dielectric/metal/dielectric structure. Full article

In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond structure of the amorphous SiN_x films. Variation of mechanical and optical properties were also evaluated. It is found that SiN_x deposited at low temperature is easily oxidized, especially at elevated temperature and moisture. The hardness and elastic modulus did not change significantly with the increase of oxidation. The changes of the surface morphology, transmittance, and fracture extensibility are negligible. Finally, it is determined that SiN_x films deposited at low-temperature with proper processing parameters are suitable for thin-film encapsulation of flexible devices. Full article

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO₂ and plasma-enhanced chemical vapor deposited (PECVD) SiN_x thin films that show a record high quantum efficiency. We investigated PECVD SiN_x passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon–dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiN_x film as well as with a stack of thermally grown SiO₂ and PECVD SiN_x films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO₂/SiN_x have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty. Full article

In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiN_x) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance InGaZnO TFT with plasma-oxidized SiN_x gate dielectric was also explored. The X-ray photoelectron spectroscopy (XPS) results confirmed that an oxygen-rich layer formed on the surface of the SiN_x layer and the amount of oxygen vacancy near the interface between SiN_x and InGaZnO layer was suppressed via pre-implanted oxygen on SiN_x gate dielectric before deposition of the InGaZnO channel layer. Moreover, the conductance method was employed to directly extract the density of the interface trap (D_it) in InGaZnO TFT to verify the reduction in oxygen vacancy after plasma oxidation. The proposed InGaZnO TFT with plasma oxidation exhibited a field-effect mobility of 16.46 cm²/V·s, threshold voltage (V_th) of −0.10 V, I_on/I_off over 10⁸, SS of 97 mV/decade, and V_th shift of −0.37 V after NBIS. The plasma oxidation on SiN_x gate dielectric provides a novel approach for suppressing the interface trap for high-performance InGaZnO TFT. Full article

We report the fabrication of bottom gate a-IGZO TFTs based on HfO₂ stacked dielectrics with decent electrical characteristics and bias stability. The microscopic, electrical, and optical properties of room temperature deposited a-IGZO film with varied oxygen content were explored. In order to suppress the bulk defects in the HfO₂ thin film and hence maximize the quality, surface modification of the SiN_x film was investigated so as to achieve a more uniform layer. The root mean square (RMS) roughness of SiN_x/HfO₂/SiN_x (SHS) stacked dielectrics was only 0.66 nm, which was reduced by 35% compared with HfO₂ single film (1.04 nm). The basic electrical characteristics of SHS-based a-IGZO TFT were as follows: V_th is 2.4 V, μ_sat is 21.1 cm² V⁻¹ s⁻¹, I_on/I_off of 3.3 × 10⁷, I_off is 10⁻¹¹ A, and SS is 0.22 V/dec. Zr-doped HfO₂ could form a more stable surface, which will decrease the bulk defect states so that the stability of device can be improved. It was found that the electrical characteristics were improved after Zr doping, with a V_th of 1.4 V, I_on/I_off of 10⁸, μ_sat of 19.5 cm² V⁻¹ s⁻¹, I_off of 10⁻¹² A, SS of 0.18 V/dec. After positive gate bias stress of 10⁴ s, the ΔV_th was decreased from 0.43 V (without Zr doping) to 0.09 V (with Zr doping), the ΔSS was decreased from 0.19 V/dec to 0.057 V/dec, respectively, which shows a meaningful impact to realize the long-term working stability of TFT devices. Full article