Search Results (77)

Among the most promising alloys for photovoltaic applications is copper–indium–gallium–selenide (CIGS) because of its enhanced optical properties. This study examines the influence of current density and pulse timing on the electrodeposition of Cu(In, Ga)Se₂ (CIGS) thin films from a dilute electrolyte. It assesses how these parameters affect deposition quality, film characteristics, and device performance. CIGS absorber layers were electrodeposited using a pulsed-current method, with systematic variations in current density and pulse on/off durations in a low-concentration solution. The deposited precursors were subsequently selenized and incorporated into fully assembled CIGS solar cell architectures. Structural characteristics were analyzed by X-ray diffraction (XRD), whereas composition and elemental distribution were assessed by energy-dispersive X-ray spectroscopy (EDS). Optical properties pertinent to photovoltaic performance were evaluated through transmittance and reflectance measurements. The results indicate that moderate current densities, when combined with brief off-times, produce dense, microcrack-free films exhibiting enhanced crystallinity and near-stoichiometric Cu/(In + Ga) and Ga/(In + Ga) ratios, in contrast to films deposited at higher current densities and extended off-times. These optimized pulse parameters also produce absorber layers with advantageous optical band gaps and improved device performance. Overall, the study demonstrates that regulating pulse parameters in attenuated electrolytes is an effective strategy to optimize CIGS film quality and to facilitate the advancement of economical, solution-based fabrication methods for high-performance CIGS solar cells. Full article

The rapid commercialization of next-generation photovoltaic (PV) technologies, particularly perovskite, thin-film roll-to-roll (R2R) architectures, and tandem devices, requires robust assessment of environmental performance at the level of industrial manufacturing processes. Environmental impacts can no longer be evaluated solely at the device or module level. Although many life-cycle assessment (LCA) studies compare silicon, cadmium telluride (CdTe), copper indium gallium selenide (CIGS), and perovskite technologies, most rely on aggregated indicators and database-level inventories. Few studies systematically compile and harmonize process-level life-cycle inventories (LCIs) for the manufacturing steps that differentiate emerging industrial routes, such as solution coating, R2R processing, atomic layer deposition, low-temperature annealing, and advanced encapsulation–metallization strategies. In addition, inconsistencies in functional units, system boundaries, electricity-mix assumptions, and scale-up modeling continue to limit meaningful cross-study comparison. To address these gaps, this review (i) compiles and critically analyzes process-resolved LCIs for innovative PV manufacturing routes across laboratory, pilot, and industrial scales; (ii) quantifies sensitivity to scale-up, yield, throughput, and electricity carbon intensity; and (iii) proposes standardized methodological rules and open-access LCI templates to improve reproducibility, comparability, and integration with techno-economic and prospective LCA models. The review also synthesizes current evidence on recycling, circularity, and critical-material management. It highlights that end-of-life (EoL) benefits for emerging PV technologies are highly conditional and remain less mature than for crystalline-silicon systems. By shifting the analytical focus from technology class to manufacturing process and life-cycle configuration, this work provides a harmonized evidence base to support scalable, circular, and low-carbon industrial pathways for next-generation PV technologies. Full article

This paper presents a theoretical study of the structural, electronic, and elastic properties of gallium-doped CuInSe₂ using the GGA exchange-correlation functional with the Hubbard correction for five Ga compositions: 0, 0.25, 0.5, 0.75, and 1. The found lattice parameters decrease with gallium composition and obey Vegard’s law. Traditional DFT calculations fail to explain the band structure of Copper Indium Gallium Selenide compounds (CIGS). The use of Hubbard corrections of d-electrons of copper, indium, gallium, and p-electrons of selenium opens the gap, showing a semiconductor’s behavior of CuInGaSe2 alloys in the range 1.04 eV to 1.88 eV, which are in good agreement with available experimental data and current theory using an expensive hybrid exchange-correlation functional. The obtained formation energies for the different gallium compositions are close to −1 eV/atom, and the phonon spectra indicate the thermodynamic stability of these alloys. The values of the elastic constant satisfy the Born elastic stability conditions, suggesting that these compounds are mechanically stable. Moreover, we compute the bulk modulus (B), shear modulus (G), Young’s modulus (E), Poisson ratio (p), Pugh’s ratio (r), and average Debye speed ($v$), and the Debye temperature (${\mathsf{\Theta }}_{\mathrm{D}}$) with the Ga composition. There is a symmetry between our results and the experimental data, as well as earlier simulation results. Full article

Neuromorphic computing, an emerging computational paradigm, aims to overcome the bottlenecks of the traditional von Neumann architecture. Two-dimensional materials serve as ideal platforms for constructing artificial synaptic devices, yet existing devices based on these materials face challenges such as insufficient stability. Indium selenide (InSe), a two-dimensional semiconductor with unique properties, demonstrates significant potential in the field of neuromorphic devices, though its application research remains in the initial stage. This study presents an artificial synaptic device based on the InSe/Charge Trapping Layer (CTL)/h-BN heterojunction. By applying oxygen plasma treatment to h-BN to form a controllable charge-trapping layer, efficient regulation of carriers in the InSe channel is achieved. The device successfully emulates fundamental synaptic behaviors including paired-pulse facilitation and long-term potentiation/inhibition, exhibiting excellent reproducibility and stability. Through investigating the influence of electrical pulse parameters on synaptic weights, a structure–activity relationship between device performance and structural parameters is established. Experimental results show that the device features outstanding linearity and symmetry, realizing the simulation of key synaptic behaviors such as dynamic conversion between short-term and long-term plasticity. It possesses a high dynamic range ratio of 7.12 and robust multi-level conductance tuning capability, with stability verified through 64 pulse cycle tests. This research provides experimental evidence for understanding interfacial charge storage mechanisms, paves the way for developing high-performance neuromorphic computing devices, and holds broad application prospects in brain-inspired computing and artificial intelligence hardware. Full article

Gold (Au) is one of the noble metals most used as a catalyst in the growth of one-dimensional nanostructures. Usually, an ultra-thin Au film is coated followed by thermal annealing to obtain Au nanoclusters. Although annealing temperature, duration and film thickness parameters have been heavily studied, there are no studies on the sputter working gas pressure, which also greatly affects the film microstructure. In this study, low (5 mTorr) and high (15 mTorr) working gas pressures were examined in addition to Au film thicknesses of 2 nm, 5 nm and 8 nm. Additionally, copper indium gallium selenide (CIGS) films were deposited on Au films with different thicknesses and argon (Ar) gas pressures. It was confirmed from SEM and AFM images that the Au films undergo drastic morphology change from smooth to extremely porous film surfaces with increasing thickness regardless of gas pressure. However, the porosity of films is increased at higher growth pressure for each thickness. Specifically, the most porous film was obtained at a 5 nm thickness with 15 mTorr, and it was filled with nanomounds. Not surprisingly, the only apparent columnar-type formation was observed for CIGS deposition, which was carried out on the most porous film. It can be interpreted that Au nanomounds behave like catalysts on which the CIGS nanocolumns grow. Full article

We present a systematic study of the fundamental optical properties of indium selenide (InSe) single crystals over a temperature range of 17 K to 300 K. The high structural quality of the β-polytype crystals was confirmed through X-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy, demonstrating excellent crystallinity and a nearly stoichiometric In:Se ratio. The temperature-dependent absorption and photoluminescence (PL) spectra are characterized by a prominent free exciton (FX) resonance. At 17 K, the photoluminescence spectrum exhibits a distinct fine-structure splitting of the Wannier–Mott exciton, yielding a triplet state at 1.333 eV and a singlet state at 1.336 eV. Additionally, a biexciton (XX) is localized at an energy of 1.322 eV as confirmed by the nonlinear dependence of intensity on excitation power density. At low temperatures, the absorption spectrum exhibits the free exciton ground state (n = 1) at 1.338 eV together with the first excited state (n = 2) at 1.350 eV. We systematically tracked and analyzed the temperature evolution of these quasiparticle energies. These findings enhance our understanding of the intrinsic many-body interactions in high-quality InSe, providing essential parameters for advancing its applications in innovative optoelectronic and quantum light-emitting devices. Full article

Although the exponential increase in photovoltaic installations does contribute to mitigating climate change, it has posed the problem of photovoltaic (PV) residue. As PV panels contain strategic metals, their recovery has become a priority. This paper therefore employs a mesoporous carbon impregnated with P507 extractant as adsorbent to selectively recover gallium and indium from solutions simulating the leachate of end-of-life CIGS (Copper Indium Gallium Selenide) cells in a fixed-bed. The previous batch results obtained in our lab show that both metals can be selectively separated by simply adjusting the initial pH, with large adsorption capacities (44.97 mg/g for gallium and 34.24 mg/g for indium). The obtained breakthrough curves were fitted to the Thomas, Yan, Yoon, and HSDM (Homogeneous Surface Diffusion Model) models using a simulation program developed in Python 3.12 obtaining good results in all cases (R² > 0.9). The estimated parameters were used to predict the experimental breakthrough curve for a different experiment that had not been used for parameter estimation, being the best predictive results the obtained with the HSDM. This is logical, given that unlike the other three models, it is mechanistic. Full article

In the last decades, small satellites such as CubeSats and PocketQubes have become popular platforms for scientific and applied missions in low Earth orbit (LEO). However, prolonged exposure to atomic oxygen, ultraviolet radiation, and thermal cycling in LEO leads to gradual degradation of onboard solar panels, reducing mission lifetime and performance. This study addresses the need to quantify and compare the degradation behavior of different solar cell technologies and protective coatings used in nanosatellites and pico-satellites. The aim is to evaluate the in-orbit performance of monocrystalline silicon (Si), gallium arsenide (GaAs), triple-junction (TJ) structures, and copper indium gallium selenide (CIGS) cells under varying orbital and satellite parameters. Telemetry data from recent small satellite missions launched after 2020, combined with numerical modeling in GNU Octave, were used to assess degradation trends. The models were validated using empirical mission data, and statistical goodness-of-fit metrics (RMSE, R²) were applied to evaluate linear and exponential degradation patterns. Results show that TJ cells exhibit the highest resistance to LEO-induced degradation, while Si-based panels experience more pronounced power loss, especially in orbits below 500 km. Furthermore, smaller satellites (<10 kg) display higher degradation rates due to lower thermal inertia and limited shielding. These findings provide practical guidance for the selection of solar cell technologies, anti-degradation coatings, and protective strategies for long-duration CubeSat missions in diverse LEO environments. Full article

The growing imperative for sustainable building retrofits has spurred significant interest in advanced photovoltaic (PV) solutions. This study evaluates the feasibility and competitiveness of incorporating CIGS thin-film photovoltaic (PV) modules into retrofit projects for aging buildings. By combining qualitative analyses of market and environmental factors with a quantitative multi-criteria index model, this research assesses CIGS performance across five critical dimensions: aesthetic, economic, safety, energy saving, and innovation. The weights assigned to each criterion were determined through expert evaluations derived from structured focus group discussions. The results demonstrate that CIGS exhibits substantial strengths in aesthetic, economic, safety, energy saving, and innovation while maintaining reasonable economic feasibility. The quantitative assessment demonstrated that CIGS thin-film solar cells received the highest overall score (88.92), surpassing silicon-based photovoltaics (86.03), window retrofitting (88.83), and facade cladding (82.21) in all five key metrics of aesthetics, economic feasibility, safety, energy efficiency, and innovation. The findings indicate that CIGS technology exhibits not only exceptional visual adaptability but also attains balanced performance with regard to environmental and structural metrics. This renders it a highly competitive and comprehensive solution for sustainable building retrofits. Full article

Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization. Full article

The European Green Deal emphasizes the development of renewable energy sources to combat climate change. However, as photovoltaic expansion accelerates, so does the potential for increased waste, necessitating effective material recycling strategies. Indium, a scarce and valuable element crucial to the production of photovoltaic panels, underscores the necessity for efficient recycling practices to reduce reliance on virgin resources. In a recent laboratory analysis, a CIGS photovoltaic panel underwent a series of processes including crushing, grinding, and homogenization. The concentration of indium, vital for recycling, was meticulously analyzed using ICP-MS and validated through microscopic and composition analyses. Subsequent extraction utilizing 3 M HCl and H₂O₂, followed by electrolysis, yielded a remarkable up to 52% indium recovery within a 48-h timeframe. Importantly, the study encompassed both averaged panel samples and samples from the absorbing layer, emphasizing the comprehensive approach required for efficient recycling. This underscores the critical importance of optimizing recycling processes to mitigate the environmental impact associated with the disposal of photovoltaic panels. By maximizing indium recovery, not only are environmental impacts reduced, but the long-term sustainability of renewable energy technologies is also ensured. This highlights the interconnectedness of recycling practices with the broader goals of achieving a circular economy and securing the viability of renewable energy systems in the fight against climate change. Full article

As an important neurotransmitter, the concentration of dopamine (DA) reflects certain physiological conditions and DA-related diseases. Rapid monitoring of DA levels is of great significance in regulating body health. However, regular electrochemical DA sensors suffer from poor sensitivity, low selectivity and interference immunity, as well as a complex preparation process. Herein, we developed an accessible and cost-effective electrochemical sensor with a copper indium selenide (CuInSe2 or CIS)-modified screen-printed carbon electrode for DA discrimination. This DA sensor was developed using a facile one-step hydrothermal method without high-temperature quenching. Benefitting from the inherent merits of CIS and the conversion of Cu²⁺ and Cu⁺ during the catalytic reaction, the sensor attained both excellent sensitivity (2.511 μA·µM⁻¹·cm⁻¹) and selectivity among multiple substances interfering with DA. This work demonstrates the potential to improve the analytical performance of traditional electrochemical sensors. Full article

Abstract: Quantum dot–polymer composites have the advantages of high luminescent quantum yield (PLQY), narrow emission half-peak full width (FWHM), and tunable emission spectra, and have broad application prospects in display and lighting fields. Research on quantum dots embedded in polymer films and plates has made great progress in both synthesis technology and optical properties. However, due to the shortcomings of quantum dots, such as cadmium selenide (CdSe), indium phosphide (InP), lead halide perovskite (LHP), poor water, oxygen, and light stability, and incapacity for large-scale synthesis, their practical application is still restricted. Various polymers, such as methyl methacrylate (PMMA), polyethylene terephthalate (PET), polystyrene (PS), polyvinylidene fluoride (PVDF), polypropylene (PP), etc., are widely used in packaging quantum dot materials because of their high plasticity, simple curing, high chemical stability, and good compatibility with quantum dot materials. This paper focuses on the application and development of quantum dot–polymer materials in the field of backlight displays, summarizes and expounds the synthesis strategies, advantages, and disadvantages of different quantum dot–polymer materials, provides inspiration for the optimization of quantum dot–polymer materials, and promotes their application in the field of wide-color-gamut backlight display. Full article

This study investigates the incorporation of thin-film photovoltaic (TFPV) technologies in building-integrated photovoltaics (BIPV) and their contribution to sustainable architecture. The research focuses on three key TFPV materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium selenide (CIGS), examining their composition, efficiency, and BIPV applications. Recent advancements have yielded impressive results, with CdTe and CIGS achieving laboratory efficiencies of 22.10% and 23.35%, respectively. The study also explores the implementation of building energy management systems (BEMS) for optimizing energy use in BIPV-equipped buildings. Financial analysis indicates that despite 10.00–30.00% higher initial costs compared to conventional materials, BIPV systems can generate 50–150 kWh/m² annually, with simple payback periods of 5–15 years. The research emphasizes the role of government incentives and innovative financing in promoting BIPV adoption. As BIPV technology progresses, it offers a promising solution for transforming buildings from energy consumers to producers, significantly contributing to sustainable urban development and climate change mitigation. Full article

Multi-junction solar cells are vital in developing reliable, green, sustainable solar cells. Consequently, the computational optimization of solar cell architecture has the potential to profoundly expedite the process of discovering high-efficiency solar cells. Copper indium gallium selenide (CIGS)-based solar cells exhibit substantial performance compared to those utilizing cadmium sulfide (CdS). Likewise, CIGS-based devices are more efficient according to their device performance, environmentally benign nature, and thus, reduced cost. Therefore, the paper introduces an optimization process of three-layered n-CdS/p-CIGS/p-GaAs (NPP)) solar cell architecture based on thickness and carrier charge density. An in-depth investigation of the numerical analysis for homojunction PPN-junction with the ’GaAs’ layer structure along with n-ZnO front contact was simulated using the Solar Cells Capacitance Simulator (SCAPS-1D) software. Subsequently, various computational optimization techniques for evaluating the effect of the thickness and the carrier density on the performance of the PPN layer on solar cell architecture were examined. The electronic characteristics by adding the GaAs layer on the top of the conventional (PN) junction further led to optimized values of the power conversion efficiency (PCE), open-circuit voltage (VOC), fill factor (FF), and short-circuit current density (JSC) of the solar cell. Lastly, the paper concludes by highlighting the most promising results of our study, showcasing the impact of adding the GaAs layer. Hence, using the optimized values from the analysis, thickness of 5 (μm) and carrier density of $1\times {10}^{20}$ (1/cm) resulted in the maximum PCE, VOC, FF, and JSC of 45.7%, 1.16 V, 89.52%, and 43.88 $\left({\mathrm{mA}/\mathrm{m}}^2\right)$, respectively, for the proposed solar cell architecture. The outcomes of the study aim to pave the path for highly efficient, optimized, and robust multi-junction solar cells. Full article