Search Results (173)

The calculation of the limiting efficiency and structural optimization of solar cells based on the detailed balance principle is systematically investigated in this study. Through modeling and numerical simulations of various cell architectures, the theoretical efficiency limits of these structures under AM1.5G (Air Mass 1.5 Global) spectrum were quantitatively evaluated. Through a comprehensive consideration of the effects of bandgap and composition, the Al_0.03Ga_0.97As/Ge (1.46 eV/0.67 eV) cell configuration was determined to achieve a high theoretical efficiency of 43.0% for two-junction cells while maintaining satisfactory lattice matching. Furthermore, the study proposes that incorporating a Ga_0.96In_0.04As (8.3 nm)/GaAs_0.77P_0.23 (3.3 nm) strain-balanced multiple quantum wells (MQWs) structure enables precise bandgap engineering, modulating the effective bandgap to the optimal middle-cell value of 1.37 eV, as determined by graphical analysis for triple junctions. This approach effectively surpasses the efficiency constraints inherent in conventional bulk-material III–V semiconductor solar cells. The results demonstrate that an optimized triple-junction solar cell with MQWs can theoretically achieve a conversion efficiency of 51.5%. This study provides a reliable theoretical foundation and a feasible technical pathway for the design of high-efficiency solar cells, especially for the emerging MQW-integrated III–V semiconductor tandem cells. Full article

The current–voltage characteristics (IVCs) of anodic TiO₂ films in a thin-film structure (Carbon paste/TiO₂/Ti/Al) were investigated in the temperature range of T = 80–300 K with bias voltages from −0.5 V to +0.5 V. Anodic oxide film, with a thickness of 14 nm, was obtained by electrochemical oxidation of Ti at a voltage of 10 V. The obtained data for various temperatures showed that the IVCs in the forward (negative on the Ti electrode) and reverse (positive on the Ti electrode) bias of the thin film structure are not symmetrical. Based on the analysis, three temperature ranges (sections) were identified in which the IVCs differ in their behavior. Examination of the IVCs revealed that the conductivity mechanism in Section I (temperature range from 298 to 263 K) is determined by the Space Charge Limited Current (SCLC). Section II, in the temperature range from 243 to 203 K, is characterized by the onset of conductivity involving donor centers, in the case where the concentration of electrons on traps is significantly higher than the concentration of electrons in the conduction band. In Section III, within the temperature range from 183 to 90 K, the conduction mechanism is the Poole–Frenkel process involving donor centers. These donor centers are located below the level of traps in the forbidden band. The results obtained indicate that anodic TiO₂ is an n-type semiconductor, in the bandgap of which there are both electron traps and donor centers formed by anionic (oxygen) vacancies. The different behavior of the characteristic energy with different sample biasing in the case of the Poole–Frenkel mechanism indicates a two-layer structure of anodic TiO₂. Full article

Gallium nitride (GaN) has emerged as one of the most promising wide-bandgap semiconductors for next-generation space photovoltaics. In contrast to conventional III–V compounds such as GaAs and InP, which are highly efficient under terrestrial conditions but suffer from radiation-induced degradation and thermal instability, GaN offers an exceptional combination of intrinsic material properties ideally suited for harsh orbital environments. Its wide bandgap, high thermal conductivity, and strong chemical stability contribute to superior resistance against high-energy protons, electrons, and atomic oxygen, while minimizing thermal fatigue under repeated cycling between extreme temperatures. Recent progress in epitaxial growth—spanning metal–organic chemical vapor deposition, molecular beam epitaxy, hydride vapor phase epitaxy, and atomic layer deposition—has enabled unprecedented control over film quality, defect densities, and heterointerface sharpness. At the device level, InGaN/GaN heterostructures, multiple quantum wells, and tandem architectures demonstrate outstanding potential for spectrum-tailored solar energy conversion, with modeling studies predicting efficiencies exceeding 40% under AM0 illumination. In this review article, the current state of knowledge on GaN materials and device architectures for space photovoltaics has been summarized, with emphasis placed on recent progress and persisting challenges. Particular focus has been given to defect management, doping strategies, and bandgap engineering approaches, which define the roadmap toward scalable and radiation-hardened GaN-based solar cells. With sustained interdisciplinary advances, GaN is anticipated to complement or even supersede traditional III–V photovoltaics in space, enabling lighter, more durable, and radiation-hard power systems for long-duration missions beyond Earth’s magnetosphere. Full article

Multiband solar cells offer a promising route to surpass the Shockley-Queisser limit by harnessing sub-bandgap photons through three active energy band transitions. However, realizing their full potential requires overcoming key challenges in material design and device architecture. Here, we propose a novel multiband stacked anti-parallel junction solar cell structure based on highly mismatched alloys (HMAs), in particular dilute GaAsN with ~1–4% N. An anti-parallel junction consists of two semiconductor junctions connected with opposite polarity, enabling bidirectional current control. The structures of the proposed devices are based on dilute GaAsN with anti-parallel junctions, which allow the elimination of tunneling junctions—a critical yet complex component in conventional multijunction solar cells. Semiconductors with three active energy bands have demonstrated the unique properties of carrier transport through the stacked anti-parallel junctions via tunnel currents. By leveraging highly mismatched alloys with tailored electronic properties, our design enables bidirectional carrier generation through forward- and reverse-biased diodes in series, significantly enhancing photocurrent extraction. Through detailed SCAPS-1D simulations, we demonstrate that strategically placed blocking layers prevent carrier recombination at contacts while preserving the three regions of photon absorption in a single multiband semiconductor p/n junction. Remarkably, our optimized five-stacked anti-parallel junctions structure achieves a maximum theoretical conversion efficiency of 70% under 100 suns illumination, rivaling the performance of state-of-the-art six-junctions III-V solar cells—but without the fabrication complexity of multijunction solar cells associated with tunnel junctions. This work establishes that highly mismatched alloys are a viable platform for high efficiency solar cells with simplified structures. Full article

Tellurium–selenium alloy films exhibit excellent performance in short-wave infrared photodetection due to their adjustable bandgap, high carrier mobility, low fabrication temperature, and compatibility with CMOS technologies. Owing to their distinctive one-dimensional chain-like architecture, they can form van der Waals heterojunctions with materials such as silicon, III–V compound semiconductors, and metal oxides. This enables the construction of high-performance short-wave infrared photodetectors. This research examines the latest advancements in heterojunction photodetectors utilizing Te_xSe_1−x alloy sheets. First, the backdrop and justification of this review are outlined followed by discussing the fundamental aspects of Te_xSe_1−x alloy films including their appearance, electrical functionality, optoelectronic performance, fabrication methods and figures of merit for photodetectors. Subsequently, we examine recent advancements in heterojunction photodetectors based on Te_xSe_1−x alloy films and discuss methods to enhance device performance through interface engineering and structural design. Finally, we consolidate the findings and discuss potential future developments and challenges we may encounter. Full article

The development of metal nanostructures on large-area Gallium Nitride (GaN) surfaces has the potential to enable new, low-cost technologies for III-N semiconductor layer nanostructuring. Self-assembled nanostructures are typically formed through the thermal activation of solid-state dewetting (SSD) in thin metal layers. However, such thermal processing can induce degradation of the metal-GaN material system. This comprehensive study investigated the thermal stability of thin metal films on GaN surfaces, focusing on their morphology and nanostructuring for high-temperature processing. The research expands and systematizes the understanding of the thin metal layers on GaN surface interactions at high temperatures by categorizing metals based on their behaviour: those that exhibit self-assembly, those that catalyze GaN decomposition, and those that remain thermally stable. Depending on the annealing temperature and metal type, varying degrees of GaN layer decomposition were observed, ranging from partial surface modification to significant volumetric degradation of the material. A wide range of metals was investigated: Au, Ag, Pt, Ni, Ru, Mo, Ti, Cr, V, Nb. These materials were selected based on criteria such as high work function and chemical resistance. In this studies metal layers with a target thickness of 10 nm deposited by vacuum evaporation on 2.2 $\mathsf{\mu }$m thick GaN layers grown by metal organic vapor phase epitaxy were applied. The surface morphology and composition were analyzed using AFM, SEM, EDS, and Raman spectroscopy measurement techniques. Full article

Autonomy is enabled by the close connection of traditional mechanical systems with information technology. Historically, both communities have built norms for validation and verification (V&V), but with very different properties for safety and associated legal liability. Thus, combining the two in the context of autonomy has exposed unresolved challenges for V&V, and without a clear V&V structure, demonstrating safety is very difficult. Today, both traditional mechanical safety and information technology rely heavily on process-oriented mechanisms to demonstrate safety. In contrast, a third community, the semiconductor industry, has achieved remarkable success by inserting design artifacts which enable formally defined mathematical abstractions. These abstractions combined with associated software tooling (Electronics Design Automation) provide critical properties for scaling the V&V task, and effectively make an inductive argument for system correctness from well-defined component compositions. This article reviews the current methods in the mechanical and IT spaces, the current limitations of cyber-physical V&V, identifies open research questions, and proposes three directions for progress inspired by semiconductors: (i) guardian-based safety architectures, (ii) functional decompositions that preserve physical constraints, and (iii) abstraction mechanisms that enable scalable virtual testing. These perspectives highlight how principles from semiconductor V&V can inform a more rigorous and scalable safety framework for autonomous systems. Full article

This work is motivated by the need to enhance efficiency and radiation resistance and reduce weight in high-performance photovoltaic devices, with applications spanning both terrestrial and space environments. Metamorphic buffers are key enablers for reducing defect formation in lattice-mismatched structures, which are among the most widespread technologies for high-efficiency photovoltaic energy conversion. Although many systems have been created, absolute certainty about the effective relaxation mechanism remains unattained. In this work, MOVPE-grown step-graded buffers with variable In content were obtained on Ge substrates and investigated to identify the critical thresholds that govern strain relaxation and defect formation. The results show that the buffers are fully strained when the In top-layer content is <6.0%, while a degree of relaxation in the entire structure appears when the In top-layer content is >6.0%. In addition, the relaxation phenomenon is paralleled by the formation of a tilt angle between the layers and the substrate. We also found evidence that the appearance of relaxation is not limited to the upper layer but is presented by the structure as a whole. The effects of Te doping inside the InGaAs layers were also investigated: Te does not influence the structure of the crystal, but it introduces a Burstein–Moss blue shift in the photoluminescence energy of about 20 meV. Eventually, to reduce defect formation with the goal of achieving high-efficiency photovoltaic devices, a thick layer with a lower In content was grown onto the overshoot material (In_0.12Ga_0.88As). The results obtained confirm the high quality of the buffers and unveil the critical points, which are responsible for the most important changes in the buffer architecture and should be considered in future material engineering. The results provide valuable insights for the design of high-performance, sustainable photovoltaic devices and contribute to the advancement of III–V semiconductor integration on Ge substrates. Full article

In this paper, we study the line-shape (LS), which indicates the amount of absorbed energy, and the line-width (LW), which indicates the scattering factor, according to the vibrational direction of the externally applied energy in the electron–phonon potential interaction system of representative semiconductor bonding types, group II–VI (ZnO) and group III–V (GaN) bonded compound semiconductors and pure group IV (Si) bonded semiconductors. One of the two systems receives the externally applied energy of right-handed circular polarization vibration, and the other receives the externally applied energy of left-handed circular polarization vibration. To analyze the quantum transport, we first employ quantum transport theory (QTR) for an electron system confined within a square-well potential, where the projected Liouville equation is addressed using the balanced-average projection method. In analyzing quantum transitions, phonon emission is linked to the transition line-width (LW), whereas phonon absorption is evaluated through the transition line-shape (LS), highlighting its sensitivity to temperature and magnetic field variations. As a result of analyzing the line-width (LW), which is a quantum scattering coefficient, and the line-shape (LS), which represents the absorbed power, the absorbed power and scattering coefficient were higher for the left circularly polarized vibration under the influence of the external magnetic field. In contrast, the right polarization produced smaller values. In addition, the scattering coefficient (LW) and the absorbed power according to the bonding type of the semiconductor were the largest in Si, a group IV bonded semiconductor, followed by group III–V (GaN) and group II–VI (ZnO) bonded semiconductors. Full article

Indium phosphide (InP) is a promising photoactive material for solar-driven hydrogen production owing to its optimal bandgap, high carrier mobility, and broad solar absorption. However, conventional InP fabrication relies on costly wafers and toxic precursors, limiting its scalability and sustainability. Here, we demonstrate a simple and environmentally friendly route to synthesize n-type InP thin-film photoanodes by phosphidating indium films prepared via doctor blade coating on ITO substrates, using NaH₂PO₂ as a phosphorus source. Structural and spectroscopic analyses (XRD, Raman, XPS, PL) confirmed the successful formation of crystalline InP with optimum quality at 425 °C. Photoelectrochemical measurements revealed a significant photocurrent density of 1.8 mA·cm⁻² under AM 1.5 illumination, with extended photoresponse into the near-infrared region. Mott–Schottky and EIS analyses indicated efficient charge separation, low transfer resistance, and unintentional n-type doping due to Sn diffusion from the ITO substrate. This facile and green synthesis route not only provides a scalable approach to III–V semiconductors but also highlights InP thin films as cost-effective and efficient photoanodes for sustainable solar hydrogen generation. Full article

The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities. This study presents a methodology for real-time measurement of the electrical parameters of semiconductor structures during neutron irradiation in a high-flux reactor environment. A specially designed irradiation fixture with an electrical measurement system was developed and implemented at the WWR-K research reactor. The system enables simultaneous measurement of electrical conductivity and the Hall effect, with automatic temperature control and remote data acquisition. The sealed fixture, equipped with radiation-resistant wiring and a temperature control, allows for continuous measurement of remote material properties at neutron fluences exceeding 10¹⁸ cm⁻², eliminating the limitations associated with post-irradiation handling of radioactive samples. The technique was successfully applied to the two different InGaAs-based heterostructures, revealing distinct mechanisms of radiation-induced modification: degradation of mobility and carrier concentration in the InGaAs quantum well structure on GaAs substrate, and transmutation-induced doping effects in the heterostructure on InP substrate. The developed methodology provides a reliable platform for evaluating radiation resistance and optimizing materials for magnetic sensors and electronic components designed for high-radiation environments. Full article

This study investigates the morphological evolution of epitaxial indium antimonide (InSb) nanowires (NWs) grown via chemical vapor deposition (CVD). We systematically explored the influence of key growth parameters—temperature (300 °C to 480 °C), source material composition, gold (Au) nanoparticle catalyst size, and growth duration—on the resulting NW morphology, specifically focusing on NW length and tapering. Our findings reveal that the competition between axial and radial growth modes, which are governed by different growth mechanisms, dictates the final nanowire shape. An optimal growth condition was identified that yields straight and minimally tapered InSb NWs. High-resolution transmission electron microscopy (TEM) confirmed that these nanowires grow preferentially along the <110> direction, and electrical characterization via field-effect transistor (NW-FET) measurements showed that they are n-type semiconductors. Full article

Aluminum nitride (AlN), a III-V wide-bandgap semiconductor, has attracted significant attention for high-temperature and high-power applications. However, achieving p-type doping in AlN remains challenging. In this study, p-type AlN thin films were fabricated via magnetron sputtering using Mg-Al alloy targets with varying Mg concentrations (0.01 at.%, 0.02 at.%, and 0.5 at.%), followed by ex situ high-temperature annealing to facilitate Mg diffusion and electrical activation. The structural, morphological, and electrical properties of the films were systematically characterized using X-ray diffraction (XRD), white light interferometry (WLI), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and Hall effect measurements. The results demonstrate that at a Mg doping concentration of 0.02 at.%, the films exhibit optimal crystallinity, uniform Mg distribution, and a favorable balance between carrier concentration and mobility, resulting in effective p-type conductivity. Increasing Mg doping leads to higher surface roughness and the formation of columnar and conical grain structures. While high Mg doping (0.5 at.%) significantly increases carrier concentration and decreases resistivity, it also reduces mobility due to enhanced impurity and carrier–carrier scattering, negatively impacting hole transport. XPS and EDS analyses confirm Mg incorporation and the formation of Mg-N and Al-Mg bonds. Overall, this study indicates that controlled Mg doping combined with high-temperature annealing can achieve p-type AlN films to a certain extent, though mobility and carrier activation remain limited, providing guidance for the development of high-performance AlN-based bipolar devices. Full article

Photobiomodulation (PBM) harnesses near-infrared (NIR) light to stimulate cellular processes, offering non-invasive treatment options for a range of conditions, including chronic wounds, inflammation, and neurological disorders. NIR light-emitting diodes (LEDs) are emerging as safer and more scalable alternatives to conventional lasers, but optimizing their performance for clinical use remains a challenge. This perspective explores the latest advances in NIR-emitting materials, spanning Group III–V, IV, and II–VI semiconductors, organic small molecules, polymers, and perovskites, with an emphasis on their applicability to PBM. Particular attention is given to the promise of perovskite LEDs, including lead-free and lanthanide-doped variants, for delivering narrowband, tunable NIR emission. Furthermore, we examine photonic and plasmonic engineering strategies that enhance light extraction, spectral precision, and device efficiency. By integrating advances in materials science and nanophotonics, it is increasingly feasible to develop flexible, biocompatible, and high-performance NIR LEDs tailored for next-generation therapeutic applications. Full article

One-dimensional GaAs/InGaAs core–shell nanowires (NWs) with reverse type-I band alignment are promising candidates for next-generation optoelectronic devices. However, the influence of composition gradients and atomic interdiffusion at the core–shell interface on their photoluminescence (PL) behavior remains to be clarified. In this work, GaAs/In_xGa_1−xAs NW arrays with different indium (In) compositions were prepared using molecular beam epitaxy (MBE), and their band alignment and optical responses were systematically investigated through power and temperature-dependent PL spectra. The experiments reveal that variations in the In concentration gradient modify the characteristics of potential wells within the composition graded layer (CGL), as reflected by distinct PL emission features and thermal activation energies. At elevated temperatures, carrier escape from these wells is closely related to the observed PL saturation and emission quenching. These results provide experimental insight into the relationship between composition gradients, carrier dynamics, and emission properties in GaAs/InGaAs core–shell NWs, making them promising candidates for high-performance nanoscale optoelectronic device design. Full article