Search Results (7)

Inductively coupled plasma–reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according to radiofrequency bias power, gas mixing ratio, and chamber pressure. The IGZO film showed an excellent etch rate of 83.2 nm/min from an optimized etching condition such as a plasma power of 100 W, process pressure of 3 mTorr, and HCl ratio of 75% (HCl:Ar at 30 sccm:10 sccm). In addition, this ICP-RIE etching condition with a high HCl composition ratio at a moderate RIE power of 100 W showed a low etched pattern skew and low photoresist damage on the IGZO patterns. It also provided excellent surface morphology of the SiO₂ film underneath after the entire dry etching of the IGZO layer. The IGZO thin film as an active layer was successfully patterned under the ICP-RIE dry etching under the HCl-Ar gas mixture, affording an excellent electrical characteristic in the resultant top-gate IGZO thin-film transistor. Full article

In this paper, we report the growth of high-quality ${\mathrm{In}}_{0.59}{\mathrm{Ga}}_{0.41}\mathrm{As}/{\mathrm{In}}_{0.37}{\mathrm{Al}}_{0.63}\mathrm{As}$ strain-balanced quantum cascade lasers (QCLs) in the low-pressure MOCVD production type multi-wafer planetary reactor addressing, in particular, quality and scaled manufacturing issues. Special attention was given to achieving the sharp interfaces (IFs), by optimizing the growth interruptions time and time of exposure of InAlAs layer to oxygen contamination in the reactor, which all result in extremely narrow IFs width, below 0.5 nm. The lasers were designed for emission at $7.7\mu$m. The active region was based on diagonal two-phonon resonance design with 40 cascade stages. For epitaxial process control, the High Resolution X-Ray Diffraction (HR XRD) and Transmission Electron Microscopy (TEM) were used to characterize the structural quality of the QCL samples. The grown structures were processed into mesa Fabry-Perot lasers using dry etching RIE ICP processing technology. The basic electro-optical characterization of the lasers is provided. We also present results of Green’s function modeling of QCLs and demonstrate the capability of non-equilibrium Green’s function (NEGF) approach for sophisticated, but still computationally effective simulation of laser’s characteristics. The sharpness of the grown IFs was confirmed by direct measurements of their chemical profiles and as well as the agreement between experimental and calculated wavelength obtained for the bandstructure with ideally abrupt (non-graded) IFs. Full article

Single LiNbO₃ (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant polarizations. However, challenges remain regarding their nanofabrication that hinder their applications. The prevailing etching techniques for LNO encompass dry etching, wet etching, and focused-ion-beam etching, each having distinct merits and demerits. Achieving higher etching rates and improved sidewall angles presents a challenge in LNO nanofabrication. Building upon the current etching researches, this study explores various etching methods using instruments capable of generating diverse plasma densities, such as dry etching in reactive ion etching (RIE) and inductively coupled plasma (ICP), proton exchange-enhanced etching, and wet chemical etching following high-temperature reduction treatment, as well as hybrid dry and wet etching. Ultimately, after employing RIE dry etching combined with wet etching, following a high-temperature reduction treatment, an etching rate of 10 nm/min and pretty 90° sidewall angles were achieved. Furthermore, high etching rates of 79 nm/min with steep sidewall angles of 83° were obtained using ICP dry etching. Additionally, using SiO₂ masks, a high etching rate of 108 nm/min and an etching selectivity ratio of 0.86:1 were achieved. Distinct etching conditions yielded diverse yet exceptional results, providing multiple processing paths of etching for the versatile application of LNO. Full article

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O₂ addition to the SF₆ plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport. Full article

This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface roughness than crystallographic planes with other orientations, including the a-GaN plane. The grooves and slope (Cuboids) at the channel base are also investigated. The agitation does not assist in Cuboid removal or crystallographic planes etching rate enhancement. Finally, the impact of UV light on m and a-GaN crystal plane etching rates in TMAH has been studied with and without UV light. Accordingly, it is found that the m-GaN plane etching rate is enhanced from 0.69 to 1.09 nm/min with UV light; in the case of a-GaN plane etching, UV light enhances the etching rate from 2.94 to 4.69 nm/min. Full article

In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate performances. In our reported research activity, dry etching of an InGaN/GaN heterogeneous structure was investigated by using an inductively coupled plasma reactive ion etching (ICP-RIE). We considered different combinations of etch mask (Ni, SiO₂, resist), focussing on the optimization of the deep etching process. A GaN mesa process with an etching depth up to 6 µm was performed in Cl₂/Ar-based plasmas using ICP reactors for LEDs dimen sions ranging from 5 to 150 µm². Our strategy was directed toward the mesa formation for vertical-type diode applications, where etch depths are relatively large. Etch characteristics were studied as a function of ICP parameters (RF power, chamber pressure, fixed total flow rate). Surface morphology, etch rates and sidewall profiles observed into InGaN/GaN structures were compared under different types of etching masks. For deep etching up to few microns into the GaN template, we state that a Ni or SiO₂ mask is more suitable to obtain a good selectivity and vertical etch profiles. The optimized etch rate was about 200nm/min under moderate ICP conditions. We applied these conditions for the fabrication of micro/nano LEDs dedicated to LiFi applications. Full article

We investigate the possibilities to realize light extraction from single crystal diamond (SCD) nanopillars. This was achieved by dedicated 519 nm laser-induced spin-state initiation of negatively charged nitrogen vacancies (NV⁻). We focus on the naturally-generated by chemical vapor deposition (CVD) growth of NV⁻. Applied diamond was neither implanted with ¹⁴N⁺, nor was the CVD synthesized SCD annealed. To investigate the possibility of light extraction by the utilization of NV⁻’s bright photoluminescence at room temperature and ambient conditions with the waveguiding effect, we have performed a top-down nanofabrication of SCD by electron beam lithography (EBL) and dry inductively-coupled plasma/reactive ion etching (ICP-RIE) to generate light focusing nanopillars. In addition, we have fluorinated the diamond’s surface by dedicated 0 V SF₆ ICP plasma. Light extraction and spin manipulations were performed with photoluminescence (PL) spectroscopy and optically detected magnetic resonance (ODMR) at room temperature. We have observed a remarkable effect based on the selective 0 V SF₆ plasma etching and surprisingly, in contrast to literature findings, deactivation of NV⁻ centers. We discuss the possible deactivation mechanism in detail. Full article