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13 pages, 2080 KB  
Article
First-Principles Study on the Photocatalytic Performance of K(Ta0.5Nb0.5)O3 Doped with Metals (Cd, Sn, Hf)
by Can Zhao, Qiao-Yue Chen, Xin-Yuan Zhou, Xu-Cai Zhao, Bo-Cheng Lei, Li-Li Zhang, Jing Zhao and Yi-Neng Huang
Nanomaterials 2025, 15(17), 1322; https://doi.org/10.3390/nano15171322 - 28 Aug 2025
Abstract
Based on the excellent performance of the K(Ta0.5Nb0.5)O3 (KTN) system, this study systematically investigated the mechanism of the influence of metal element (Cd, Sn, Hf) doping on the photocatalytic performance of KTN ferroelectric materials using the density functional [...] Read more.
Based on the excellent performance of the K(Ta0.5Nb0.5)O3 (KTN) system, this study systematically investigated the mechanism of the influence of metal element (Cd, Sn, Hf) doping on the photocatalytic performance of KTN ferroelectric materials using the density functional theory (DFT) based on first principles. The findings indicate that after metal atom doping, the tolerance factor of doping systems is similar to that of pure KTN crystals, confirming that doping does not compromise its structural stability. However, the ion radius differences caused by doping lead to lattice distortion, significantly reducing the bandgap width. Because the impurity element substituting the Ta site exhibits a lower valence state compared to Ta, holes become the majority carriers, thereby endowing the semiconductor with p-type characteristics. These characteristics effectively suppress electron–hole recombination while enhancing electron transitions. Furthermore, the increase in the dielectric constant of the doped system indicates an enhancement in its polarization capability, which is accompanied by a significant improvement in carrier mobility. The peak of the imaginary part of the dielectric function and the peak of the absorption spectrum both shift towards the low-energy region, indicating that doping has expanded the light response range of the system. Moreover, the effective mass of the holes in all doped systems is significantly higher than that of the electrons, further demonstrating that the introduction of impurities is conducive to hindering the separation of photogenerated electron–hole pairs. These modifications significantly enhance the photocatalytic performance of the systems. Full article
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25 pages, 1312 KB  
Article
The Role of Exchange Energy in Modeling Core-Electron Binding Energies of Strongly Polar Bonds
by Feng Wang and Delano P. Chong
Molecules 2025, 30(13), 2887; https://doi.org/10.3390/molecules30132887 - 7 Jul 2025
Viewed by 504
Abstract
Accurate determination of carbon core-electron binding energies (C1s CEBEs) is crucial for X-ray photoelectron spectroscopy (XPS) assignments and predictive computational modeling. This study evaluates density functional theory (DFT)-based methods for calculating C1s core-electron binding energies (CEBEs), comparing three functionals—PW86x-PW91c (DFTpw), mPW1PW, and PBE50—across [...] Read more.
Accurate determination of carbon core-electron binding energies (C1s CEBEs) is crucial for X-ray photoelectron spectroscopy (XPS) assignments and predictive computational modeling. This study evaluates density functional theory (DFT)-based methods for calculating C1s core-electron binding energies (CEBEs), comparing three functionals—PW86x-PW91c (DFTpw), mPW1PW, and PBE50—across 68 C1s cases in small hydrocarbons and halogenated molecules (alkyl halides), using the delta self-consistent field ΔSCF (or ΔDFT) method developed by one of the authors over the past decade. The PW86x-PW91c functional achieves a root mean square deviation (RMSD) of 0.1735 eV, with improved accuracy for polar C-X bonds (X=O, F) using mPW1PW and PBE50, reducing the average absolute deviation (AAD) to ~0.132 eV. The study emphasizes the role of Hartree–Fock (HF) exchange in refining CEBE predictions and highlights the synergy between theoretical and experimental approaches. These insights lay the groundwork for machine learning (ML)-driven spectral analysis, advancing materials characterization, and catalysis through more reliable automated XPS assignments. Full article
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20 pages, 1061 KB  
Review
Quantum Mechanics in Drug Discovery: A Comprehensive Review of Methods, Applications, and Future Directions
by Sarfaraz K. Niazi
Int. J. Mol. Sci. 2025, 26(13), 6325; https://doi.org/10.3390/ijms26136325 - 30 Jun 2025
Cited by 1 | Viewed by 1413
Abstract
Quantum mechanics (QM) revolutionizes drug discovery by providing precise molecular insights unattainable with classical methods. This review explores QM’s role in computational drug design, detailing key methods like density functional theory (DFT), Hartree–Fock (HF), quantum mechanics/molecular mechanics (QM/MM), and fragment molecular orbital (FMO). [...] Read more.
Quantum mechanics (QM) revolutionizes drug discovery by providing precise molecular insights unattainable with classical methods. This review explores QM’s role in computational drug design, detailing key methods like density functional theory (DFT), Hartree–Fock (HF), quantum mechanics/molecular mechanics (QM/MM), and fragment molecular orbital (FMO). These methods model electronic structures, binding affinities, and reaction mechanisms, enhancing structure-based and fragment-based drug design. This article highlights the applicability of QM to various drug classes, including small-molecule kinase inhibitors, metalloenzyme inhibitors, covalent inhibitors, and fragment-based leads. Quantum computing’s potential to accelerate quantum mechanical (QM) calculations is discussed alongside novel applications in biological drugs (e.g., gene therapies, monoclonal antibodies, biosimilars), protein–receptor dynamics, and new therapeutic indications. A molecular dynamics (MD) simulation exercise is included to teach QM/MM applications. Future projections for 2030–2035 emphasize QM’s transformative impact on personalized medicine and undruggable targets. The qualifications and tools required for researchers, including advanced degrees, programming skills, and software such as Gaussian and Qiskit, are outlined, along with sources for training and resources. Specific publications on quantum mechanics (QM) in drug discovery relevant to QM and molecular dynamics (MD) studies are incorporated. Challenges, such as computational cost and expertise requirements, are addressed, offering a roadmap for educators and researchers to leverage quantum mechanics (QM) and molecular dynamics (MD) in drug discovery. Full article
(This article belongs to the Section Molecular Pathology, Diagnostics, and Therapeutics)
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21 pages, 8416 KB  
Article
First-Principles Calculations of the Effect of Ta Content on the Properties of UNbMoHfTa High-Entropy Alloys
by Yue Lin, Tao Wang, Jintao Wang, Wanxiao Guo, Weiyi Li, Yuheng Li and Hongbo Qiu
Metals 2025, 15(5), 551; https://doi.org/10.3390/met15050551 - 16 May 2025
Viewed by 508
Abstract
Uranium-containing high-entropy alloys (HEAs) exhibit great potential as a novel energetic structural material, attributed to their excellent performance in impact energy release, superior mechanical properties, and high density. This study investigates the effects of Ta content on the phase stability, lattice constant, density, [...] Read more.
Uranium-containing high-entropy alloys (HEAs) exhibit great potential as a novel energetic structural material, attributed to their excellent performance in impact energy release, superior mechanical properties, and high density. This study investigates the effects of Ta content on the phase stability, lattice constant, density, elastic constants, polycrystalline moduli, and electronic structure of (UNbMoHf)54−xTax high-entropy alloys (where x = 2, 6, 10, 14, 18), utilizing a combination of density functional theory (DFT) calculations and the special quasi-random structure (SQS) approach. Our findings confirm that these alloys maintain stable body-centered cubic structures, as evidenced by atomic radius difference and valence electron concentration evaluations. Analysis of elastic modulus, Cauchy pressure, and Vickers hardness indicates that Ta incorporation enhances mechanical properties and increases the anisotropy of these alloys. Furthermore, investigations into the electronic structure reveal that adding Ta reduces metallic character while increasing covalent characteristics, enhancing the contribution of Ta’s d-orbitals to the total density of states and intensifying covalent bonding interactions between Ta and other elements such as Nb, Mo, and U. These findings provide theoretical guidance for the design of high-performance UNbMoHfTa HEAs with tailored properties. Full article
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21 pages, 27535 KB  
Article
A Comparative Study of A2SiF6 (A = Cs, K) Phosphor Host Matrices: Linear Combination of Atomic Orbital Hybrid Density Functional Theory Calculations
by Leonid L. Rusevich, Mikhail G. Brik, Denis Gryaznov, Alok M. Srivastava, Ilya D. Chervyakov, Guntars Zvejnieks, Dmitry Bocharov and Eugene A. Kotomin
Materials 2025, 18(9), 2025; https://doi.org/10.3390/ma18092025 - 29 Apr 2025
Viewed by 628
Abstract
Cesium hexafluorosilicate (Cs2SiF6, CSF) and potassium hexafluorosilicate (K2SiF6, KSF) compounds are suitable hosts for luminescent impurities. In this work, the results of first-principle calculations of the basic properties of both these compounds are discussed and [...] Read more.
Cesium hexafluorosilicate (Cs2SiF6, CSF) and potassium hexafluorosilicate (K2SiF6, KSF) compounds are suitable hosts for luminescent impurities. In this work, the results of first-principle calculations of the basic properties of both these compounds are discussed and compared with the available experimental and theoretical data. The simulations were performed using the CRYSTAL23 computer code within the linear combination of atomic orbitals (LCAO) method of the density functional theory (DFT) and the advanced hybrid DFT-HF exchange-correlation B1WC functional. A comparative study of the structural, electronic, and elastic properties of the two materials is presented, along with a study of the dependence of properties on external pressure in the range of 0–20 GPa. In particular, the electronic properties with an emphasis on the effective atomic charges (by means of Mulliken analysis) and the chemical bonding properties (by means of crystal orbital overlap population (COOP) analysis) were addressed, with regards to the pressure effects. The structure of the valence bands at 0 and 20 GPa was compared. The vibrational properties of CSF and KSF were calculated, including the simulation of the one-phonon IR and Raman spectra. The calculated Raman spectra exhibit excellent agreement with the experimental ones. The pressure dependences of sound speeds and the Debye temperature are evaluated. Full article
(This article belongs to the Section Materials Simulation and Design)
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12 pages, 4356 KB  
Article
Unveiling the Impact of 0–20 Gpa Hydrostatic Pressure on the Physical Properties of (Cs2HfCl6) Double Perovskite
by Umar Farooq, Nabeel Israr, Belqees Hassan, Ali Alnakhlani, Mohamed Kallel, Wasif ur Rehman and Yong-Long Wang
Crystals 2025, 15(5), 395; https://doi.org/10.3390/cryst15050395 - 24 Apr 2025
Viewed by 426
Abstract
The current work determines the physical properties of Cs2HfCl6 photovoltaic compounds including their structural, electronic, and optical behavior, utilizing the DFT approach. The simulated Cs2HfCl6 lattice constants, cell volumes, and bond lengths decrease as the pressure increases [...] Read more.
The current work determines the physical properties of Cs2HfCl6 photovoltaic compounds including their structural, electronic, and optical behavior, utilizing the DFT approach. The simulated Cs2HfCl6 lattice constants, cell volumes, and bond lengths decrease as the pressure increases from 0 to 20 GPa. The band structure analysis reveals that the calculated under-pressure (0–20 GPa) of Cs2HfCl6 is semiconducting with a flexible indirect bandgap (5.44, 2.76, 2.02, 1.45, and 0.99) eV. The electronic bandgap diminishes (0–20 GPa), transitioning the compound from the UV to the visible spectra. This alteration improves the transition from the VBM to the CBM, hence augmenting the optical effectiveness. Concurrently, the dielectric function escalates, enhancing the absorption and conductivity, and causing a red shift in the optical spectra, while diminishing the reflection in the visible spectra. Our findings on the hydraulic pressure (0–20 GPa) and the electrical and optical properties indicate that Cs2HfCl6 may be utilized in the development of next-generation solar cells, LEDs, UV sensors, and high-pressure optical instruments. Full article
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18 pages, 6880 KB  
Article
Why Does the Optimal Tuning Method of the Range Separation Parameter of a Long-Range Corrected Density Functional Fail in Intramolecular Charge Transfer Excitation Calculations?
by Han-Seok Bae, Dae-Hwan Ahn and Jong-Won Song
Molecules 2024, 29(18), 4423; https://doi.org/10.3390/molecules29184423 - 18 Sep 2024
Viewed by 1052
Abstract
We performed intra- and intermolecular charge transfer (CT) excitation energy calculations of (a) conjugated carbon chain [H2N–(CH=CH)n–X] and (b) its equidistant H2NH∙∙∙HX (n = 2~8) with various electron acceptors (X = NH2, [...] Read more.
We performed intra- and intermolecular charge transfer (CT) excitation energy calculations of (a) conjugated carbon chain [H2N–(CH=CH)n–X] and (b) its equidistant H2NH∙∙∙HX (n = 2~8) with various electron acceptors (X = NH2, OH, Cl, CHO, CN, and NO2) using EOM-CCSD, time-dependent (TD) Hartree–Fock (HF) and various density functional theory (DFT) functionals, such as BLYP, B3LYP, long-range corrected (LC) DFT, and LC-DFT with an optimally tuned (OT) range separation parameter (µ) using Koopman’s theorem to investigate the effect of the electron-withdrawing (or -donating) strength of end-capped functional group (X) and CT distance (R) on intra- and intermolecular CT excitation energies. As the electron-withdrawing strength of X increases, both intra- and intermolecular CT excitation energies tend to decrease, since energy gaps between orbitals corresponding to CT excitations (e.g., HOMO and LUMO) decrease. However, the effect of the electron-withdrawing group on intramolecular CT excitation energy is negligible (at most 0.5 eV). OT-LC-DFT shows accurate intermolecular CT excitation energy, but worse results in intramolecular CT excitation energy than LC-DFT with the default µ value (0.47). Therefore, we conclude that the optimal tuning method is not effective in predicting intramolecular CT excitation energy. While intermolecular CT excitation energy has excitonic binding energy with asymptotic behavior to CT distance that is not affected by the choice of range separation parameter, intramolecular CT excitation energy is affected by orbital relaxation energy, which strongly depends on the choice of range separation parameter, which makes the OT method of range separation parameter ineffective in predicting intramolecular CT excitation energy as well as local excitation with high accuracy. Full article
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12 pages, 9726 KB  
Article
In Situ Modulation of Oxygen Vacancy Concentration in Hf0.5Zr0.5O2−x Thin Films and the Mechanism of Its Impact on Ferroelectricity
by Shikai Liu, Xingyu Li, Gang Li, Shaoan Yan, Yingfang Zhu, Yujie Wu, Qin Jiang, Yang Zhan and Minghua Tang
Coatings 2024, 14(9), 1121; https://doi.org/10.3390/coatings14091121 - 2 Sep 2024
Cited by 2 | Viewed by 2604
Abstract
Oxygen vacancies play a crucial role in stabilizing the ferroelectric phase in hafnium (Hf) oxide-based thin films and in shaping the evolution of their ferroelectric properties. In this study, we directly manipulated the oxygen vacancy concentration in Hf0.5Zr0.5O2− [...] Read more.
Oxygen vacancies play a crucial role in stabilizing the ferroelectric phase in hafnium (Hf) oxide-based thin films and in shaping the evolution of their ferroelectric properties. In this study, we directly manipulated the oxygen vacancy concentration in Hf0.5Zr0.5O2−x (HZO) ferroelectric thin films in situ using oxygen plasma treatment. We scrutinized the variations in the ferroelectric properties of HZO films across different oxygen vacancy concentrations by integrating the findings from ferroelectric performance tests. Additionally, we elucidated the mechanism underlying the influence of oxygen vacancies on the coercive field and polarization properties of HZO ferroelectric films through the first-principles density functional theory (DFT) calculations. Finally, to study the impact of oxygen vacancies on the practical application of HZO ferroelectric synaptic devices, leveraging the plasticity of the ferroelectric polarization, we constructed a multilayer perceptron (MLP) network. We simulated its recognition accuracy and convergence speed under different oxygen vacancy concentrations in the MNIST recognition task. Full article
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10 pages, 1316 KB  
Article
Unveiling the Influence of Water Molecules for NF3 Removal by the Reaction of NF3 with OH: A DFT Study
by Jiaxin Liu, Yong Zhao, Xueqi Lian, Dongdong Li, Xueling Zhang, Jun Chen, Bin Deng, Xiaobing Lan and Youxiang Shao
Molecules 2024, 29(17), 4033; https://doi.org/10.3390/molecules29174033 - 26 Aug 2024
Cited by 2 | Viewed by 1533
Abstract
The removal of nitrogen trifluoride (NF3) is of significant importance in atmospheric chemistry, as NF3 is an important anthropogenic greenhouse gas. However, the radical species OH and O(1D) in atmospheric conditions are nonreactive towards NF3. It [...] Read more.
The removal of nitrogen trifluoride (NF3) is of significant importance in atmospheric chemistry, as NF3 is an important anthropogenic greenhouse gas. However, the radical species OH and O(1D) in atmospheric conditions are nonreactive towards NF3. It is necessary to explore possible ways to remove NF3 in atmosphere. Therefore, the participation of water molecules in the reaction of NF3 with OH was discussed, as water is abundant in the atmosphere and can form very stable complexes due to its ability to act as both a hydrogen bond donor and acceptor. Systemic DFT calculations carried out at the CBS-QB3 and ωB97XD/aug-cc-pVTZ level of theory suggest that water molecules could affect the NF3 + OH reaction as well. The energy barrier of the SN2 mechanism was decreased by 8.52 kcal/mol and 10.58 kcal/mol with the assistance of H2O and (H2O)2, respectively. Moreover, the presence of (H2O)2 not only reduced the energy barrier of the reaction, but also changed the product channels, i.e., formation of NF2O + (H2O)2-HF instead of NF2OH + (H2O)2-F. Therefore, the removal of NF3 by reaction with OH is possible in the presence of water molecules. The results presented in this study should provide useful information on the atmospheric chemistry of NF3. Full article
(This article belongs to the Special Issue Catalysis for Green Chemistry II)
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18 pages, 402 KB  
Article
A Visual Representation for Accurate Local Basis Set Construction and Optimization: A Case Study of SrTiO3 with Hybrid DFT Functionals
by Guntars Zvejnieks, Leonid L. Rusevich, Eugene Heifets, Eugene Kotomin and Denis Gryaznov
Crystals 2024, 14(7), 671; https://doi.org/10.3390/cryst14070671 - 22 Jul 2024
Cited by 1 | Viewed by 1085
Abstract
The linear combination of atomic orbitals (LCAO) method is advantageous for calculating important bulk and surface properties of crystals and defects in/on them. Compared to plane wave calculations and contrary to common assumptions, hybrid density functional theory (DFT) functionals are actually less costly [...] Read more.
The linear combination of atomic orbitals (LCAO) method is advantageous for calculating important bulk and surface properties of crystals and defects in/on them. Compared to plane wave calculations and contrary to common assumptions, hybrid density functional theory (DFT) functionals are actually less costly and easier to implement in LCAO codes. However, choosing the proper basis set (BS) for the LCAO calculations representing Guassian-type functions is crucial, as the results depend heavily on its quality. In this study, we introduce a new basis set (BS) visual representation, which helps us (1) analyze the collective behavior of individual atoms’ shell exponents (s, p, and d), (2) better compare different BSs, (3) identify atom-type invariant relationships, and (4) suggest a robust method for building a local all-electron BS (denoted as BS1) from scratch for each atom type. To compare our BS1 with the others existing in the literature, we calculate the basic bulk properties of SrTiO3 (STO) in cubic and tetragonal phases using several hybrid DFT functionals (B3LYP, PBE0, and HSE06). After adjusting the exact Hartree–Fock (HF) exchange of PBEx, HSEx, and the state-of-the-art meta-GGA hybrid r2SCANx functionals, we find the r2SCAN15 and HSE27 for BS1, with the amount of exact HF exchange of 0.15 and 0.27, respectively, perform equally well for reproducing several most relevant STO properties. The proposed robust BS construction scheme has the advantage that all parameters of the obtained BS can be reoptimized for each new material, thus increasing the quality of DFT calculation predictions. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
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7 pages, 2944 KB  
Communication
Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM
by Huikai He, Xiaobo Yuan, Wenhao Wu, Choonghyun Lee, Yi Zhao and Zongfang Liu
Electronics 2024, 13(12), 2384; https://doi.org/10.3390/electronics13122384 - 18 Jun 2024
Cited by 4 | Viewed by 1929
Abstract
Al alloying/doping in HfO2-based resistive random-access memory (RRAM) has been proven to be an effective method for improving the low-resistance state (LRS) retention. However, a detailed understanding of Al concentration on oxygen vacancy migration and resistive switching (RS) behaviors still needs [...] Read more.
Al alloying/doping in HfO2-based resistive random-access memory (RRAM) has been proven to be an effective method for improving the low-resistance state (LRS) retention. However, a detailed understanding of Al concentration on oxygen vacancy migration and resistive switching (RS) behaviors still needs to be included. Herein, the impact of Al concentration on the RS properties of the TiN/Ti/HfAlO/TiN RRAM devices is addressed. Firstly, it is found that the forming voltage, SET voltage, and RESET voltage can be regulated by varying the Al doping concentration. Moreover, we have demonstrated that the device with 15% Al shows the minimum cycle-to-cycle variability (CCV) and superior endurance (over 106). According to density-functional theory (DFT) calculations, it is found that the increased operation voltage, improved uniformity, and improved endurance are attributed to the elevated migration barrier of oxygen vacancy through Al doping. In addition, LRS retention characteristics of the TiN/Ti/HfAlO/TiN devices with different Al concentrations are compared. It is observed that the LRS retention is greatly enhanced due to the suppressed lateral diffusion process of oxygen vacancy through Al doping. This study demonstrates that Al alloying/doping greatly affects the RS behaviors of HfO2-based RRAM and provides a feasible way to improve the RS properties through changing the Al concentration. Full article
(This article belongs to the Special Issue Advanced CMOS Devices and Applications, 2nd Edition)
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13 pages, 1108 KB  
Article
Hafnium Carbide: Prediction of Crystalline Structures and Investigation of Mechanical Properties
by Jelena Zagorac, Johann Christian Schön, Branko Matović, Svetlana Butulija and Dejan Zagorac
Crystals 2024, 14(4), 340; https://doi.org/10.3390/cryst14040340 - 2 Apr 2024
Cited by 7 | Viewed by 3413
Abstract
Hafnium carbide (HfC) is a refractory compound known for its exceptional mechanical, thermal, and electrical properties. This compound has gained significant attention in materials science and engineering due to its high melting point, extreme hardness, and excellent thermal stability. This study presents crystal [...] Read more.
Hafnium carbide (HfC) is a refractory compound known for its exceptional mechanical, thermal, and electrical properties. This compound has gained significant attention in materials science and engineering due to its high melting point, extreme hardness, and excellent thermal stability. This study presents crystal structure prediction via energy landscape explorations of pristine hafnium carbide supplemented by data mining. Apart from the well-known equilibrium rock salt phase, we predict eight new polymorphs of HfC. The predicted HfC phases appear in the energy landscape with known structure types such as the WC type, NiAs type, 5-5 type, sphalerite (ZnS) type, TlI type, and CsCl type; in addition, we predict two new structure types denoted as ortho_HfC and HfC_polytype, respectively. Moreover, we have investigated the structural characteristics and mechanical properties of hafnium carbide at the DFT level of computation, which opens diverse applications in various technological domains. Full article
(This article belongs to the Special Issue Density Functional Theory (DFT) of Two-Dimensional Materials)
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11 pages, 5690 KB  
Article
Ballistic Performance of Quasi-One-Dimensional Hafnium Disulfide Field-Effect Transistors
by Mislav Matić and Mirko Poljak
Electronics 2024, 13(6), 1048; https://doi.org/10.3390/electronics13061048 - 11 Mar 2024
Cited by 5 | Viewed by 1684
Abstract
Hafnium disulfide (HfS2) monolayer is one of the most promising two-dimensional (2D) materials for future nanoscale electronic devices, and patterning it into quasi-one-dimensional HfS2 nanoribbons (HfS2NRs) enables multi-channel architectures for field-effect transistors (FETs). Electronic, transport and ballistic device characteristics [...] Read more.
Hafnium disulfide (HfS2) monolayer is one of the most promising two-dimensional (2D) materials for future nanoscale electronic devices, and patterning it into quasi-one-dimensional HfS2 nanoribbons (HfS2NRs) enables multi-channel architectures for field-effect transistors (FETs). Electronic, transport and ballistic device characteristics are studied for sub-7 nm-wide and ~15 nm-long zigzag HfS2NR FETs using non-equilibrium Green’s functions (NEGF) formalism with density functional theory (DFT) and maximally localized Wannier functions (MLWFs). We provide an in-depth analysis of quantum confinement effects on ON-state performance. We show that bandgap and hole transport mass are immune to downscaling effects, while the ON-state performance is boosted by up to 53% but only in n-type devices. Finally, we demonstrate that HfS2NR FETs can fulfill the industry requirements for future technology nodes, which makes them a promising solution for FET architectures based on multiple nanosheets or nanowires. Full article
(This article belongs to the Special Issue Feature Papers in Semiconductor Devices)
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29 pages, 3266 KB  
Article
Electronic Structure and Chemical Bonding of the First-, Second-, and Third-Row-Transition-Metal Monoborides: The Formation of Quadruple Bonds in RhB, RuB, and TcB
by Constantinos Demetriou, Christina Eleftheria Tzeliou, Alexandros Androutsopoulos and Demeter Tzeli
Molecules 2023, 28(24), 8016; https://doi.org/10.3390/molecules28248016 - 8 Dec 2023
Cited by 5 | Viewed by 1778
Abstract
Boron presents an important role in chemistry, biology, and materials science. Diatomic transition-metal borides (MBs) are the building blocks of many complexes and materials, and they present unique electronic structures with interesting and peculiar properties and a variety of bonding schemes which are [...] Read more.
Boron presents an important role in chemistry, biology, and materials science. Diatomic transition-metal borides (MBs) are the building blocks of many complexes and materials, and they present unique electronic structures with interesting and peculiar properties and a variety of bonding schemes which are analyzed here. In the first part of this paper, we present a review on the available experimental and theoretical studies on the first-row-transition-metal borides, i.e., ScB, TiB, VB, CrB, MnB, FeB, CoB, NiB, CuB, and ZnB; the second-row-transition-metal borides, i.e., YB, ZrB, NbB, MoB, TcB, RuB, RhB, PdB, AgB, and CdB; and the third-row-transition-metal borides, i.e., LaB, HfB, TaB, WB, ReB, OsB, IrB, PtB, AuB, and HgB. Consequently, in the second part, the second- and third-row MBs are studied via DFT calculations using the B3LYP, TPSSh, and MN15 functionals and, in some cases, via multi-reference methods, MRCISD+Q, in conjunction with the aug-cc-pVQZ-PPM/aug-cc-pVQZB basis sets. Specifically, bond distances, dissociation energies, frequencies, dipole moments, and natural NPA charges are reported. Comparisons between MB molecules along the three rows are presented, and their differences and similarities are analyzed. The bonding of the diatomic borides is also described; it is found that, apart from RhB(X1Σ+), which was just recently found to form quadruple bonds, RuB(X2Δ) and TcB(X3Σ) also form quadruple σ2σ2π2π2 bonds in their X states. Moreover, to fill the gap existing in the current literature, here, we calculate the TcB molecule. Full article
(This article belongs to the Special Issue Fundamental Aspects of Chemical Bonding)
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21 pages, 4160 KB  
Article
Designing Quaternary and Quinary Refractory-Based High-Entropy Alloys: Statistical Analysis of Their Lattice Distortion, Mechanical, and Thermal Properties
by Saro San, Sahib Hasan, Puja Adhikari and Wai-Yim Ching
Metals 2023, 13(12), 1953; https://doi.org/10.3390/met13121953 - 29 Nov 2023
Cited by 8 | Viewed by 2719
Abstract
The rapid evolution in materials science has resulted in a significant interest in high-entropy alloys (HEAs) for their unique properties. This study focuses on understanding both quaternary and quinary body-centered cubic (BCC) of 12 refractory-based HEAs, and on analysis of their electronic structures, [...] Read more.
The rapid evolution in materials science has resulted in a significant interest in high-entropy alloys (HEAs) for their unique properties. This study focuses on understanding both quaternary and quinary body-centered cubic (BCC) of 12 refractory-based HEAs, and on analysis of their electronic structures, lattice distortions, mechanical, and thermal properties. A comprehensive assessment is undertaken by means of density functional theory (DFT)-based first principles calculations. It is well known that multiple constituents lead to notable lattice distortions, especially in quinary HEAs. This distortion, in turn, has significant implications on the electronic structure that ultimately affect mechanical and thermal behaviors of these alloys such as ductility, lattice thermal conductivity, and toughness. Our in-depth analysis of their electronic structures revealed the role of valence electron concentration and its correlation with bond order and mechanical properties. Local lattice distortion (LD) was investigated for these 12 HEA models. M1 (WTiVZrHf), M7 (TiZrHfW), and M12 (TiZrHfVNb) have the highest LD whereas the models M3 (MoTaTiV), M5 (WTaCrV), M6 (MoNbTaW), and M9 (NbTaTiV) have the less LD. Furthermore, we investigated the thermal properties focusing on Debye temperature (ΘD), thermal conductivity (κ), Grüneisen parameter (γα), and dominant phonon wavelength (λdom). The NbTaTiV(M9) and TiVNbHf(M10) models have significantly reduced lattice thermal conductivities (κL). This reduction is due to the mass increase and strain fluctuations, which in turn signify lattice distortion. The findings not only provide an understanding of these promising materials but also offer guidance for the design of next-generation HEAs with properties tailored for potential specific applications. Full article
(This article belongs to the Special Issue Feature Papers in Entropic Alloys and Meta-Metals)
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