Search Results (90)

The poor magnetic and magneto-optical properties of BiFeO₃, along with its significant lattice mismatch with silicon, have limited its application in silicon-based integrated magneto-optical devices. In this study, co-doping with Sr²⁺ and Ti⁴⁺ ions effectively transformed the trigonal structure of BiFeO₃ into a cubic phase, thereby reducing the lattice mismatch with silicon to 2.8%. High-quality, highly oriented, silicon-based cubic Sr,Ti:BiFeO₃ thin films were successfully fabricated using radio frequency magnetron sputtering. Due to the induced lattice distortion, the characteristic periodic spiral spin antiferromagnetic structure of BiFeO₃ was suppressed, resulting in a significant enhancement of the saturation magnetization of cubic Bi_0.5Sr_0.5Fe_0.5Ti_0.5O₃ (48.0 emu/cm³), compared to that of pristine BiFeO₃ (5.0 emu/cm³). Furthermore, the incorporation of Sr²⁺ and Ti⁴⁺ ions eliminated the birefringence effect inherent in trigonal BiFeO₃, thereby inducing a pronounced magneto-optical effect in the cubic Sr,Ti:BiFeO₃ thin film. The magnetic circular dichroic ellipticity (ψ_F) of Bi_0.5Sr_0.5Fe_0.5Ti_0.5O₃ reached an impressive 2300 degrees/cm. Full article

BiFeO₃ is a fascinating material with a rhombohedral crystal structure (R3c) at room temperature. This unique structure makes it suitable for use in solar cells, as the interaction of light with the polarized octahedral enhances electron movement. Evaluating its properties on different substrates helps to identify the specific characteristics of thin films. The thin films presented in this work were deposited using reactive RF cathodic sputtering with a homemade 1-inch diameter ceramic target. Their morphology, phase composition, optical, piezoelectric, and ferroelectric properties were evaluated. Fluorine Tin Oxide (FTO) and Indium Tin Oxide (ITO) substrates were used for the presented thin films. The thin films deposited on FTO displayed the “butterfly” behavior typically associated with ferroelectric materials. A d₃₃ value of 2.71 nm/V was determined using SSPFM-DART mode. In contrast, the thin films deposited on ITO at 550 °C reached a maximum saturation polarization of 40.89 μC/cm² and a remnant polarization of 44.87 μC/cm², which are the highest values recorded, but did not present the typical “butterfly” behavior. As the grain size increased, the influence of charge defects became more pronounced, leading to an increase in the leakage current. Furthermore, the presence of secondary phases also contributed to this behavior. Full article

A new voltammetric sensor (BDDE/Nafion@Fe₃O₄/BiF) was fabricated by applying a nanocomposite drop of Fe₃O₄ magnetic nanoparticles in Nafion onto the polished boron-doped diamond electrode (BDDE) surface. Then, after drying (5 min at room temperature), the electrode was electrochemically modified with bismuth film (BiF) during in situ analysis. The Nafion@Fe₃O₄/BiF modification of the BDDE contributes to the acquisition of the highest differential-pulse adsorptive stripping voltammetric (DPAdSV) signals of caffeine (CAF) due to the improvement of electron transfer and the increase in the number of active sites on which CAF can be adsorbed. The DPAdSV signals exhibited a linearly varied oxidation peak with the CAF concentration range between 0.5 and 10,000 nM, leading to the 0.043 and 0.14 nM detection and quantification limits, respectively. The practical applicability of the DPAdSV procedure using the BDDE/Nafion@Fe₃O₄/BiF was positively confirmed with commercially available energy drinks. Full article

We report the growth and optical characterization of single-crystal BiFe_1−xMn_xO₃ thin films directly on SrTiO₃/Si(001) substrates using molecular beam epitaxy. X-ray diffraction confirmed epitaxial growth, film crystallinity, and sharp interface quality. Scanning electron microscopy and energy dispersive X-ray spectroscopy verified uniform film morphology and successful Mn incorporation. Spectroscopic ellipsometry revealed a systematic bandgap reduction with increasing Mn concentration, from 2.7 eV in BiFeO₃ to 2.58 eV in BiFe_0.74Mn_0.26O₃, consistent with previous reports on Mn-doped BiFeO₃. These findings highlight the potential of BiFe₁₋_xMn_xO₃ films for bandgap engineering, advancing their integration into silicon-compatible multifunctional optoelectronic and photovoltaic applications. Full article

Perovskite-type materials containing Bi³⁺ cations at A sites are interesting from the viewpoints of applications and fundamental science as the lone pair of Bi³⁺ cations often stabilizes polar, ferroelectric structures. This can be illustrated by a lot of discoveries of different new functionalities in bulk and thin films of BiFeO₃ and its derivatives. In this work, we investigated solid solutions of BiCr_1−xFe_xO₃ with 0.1 ≤ x ≤ 0.4 prepared by a high-pressure (HP) method and post-synthesis annealing at ambient pressure (AP). HP-BiCr_1−xFe_xO₃ modifications with 0.1 ≤ x ≤ 0.3 were mixtures of two phases with space groups C2/c and Pbam, and the amount of the C2/c phase decreased with increasing x. The amount of the C2/c phase was also significantly decreased in AP-BiCr_1−xFe_xO₃ modifications, and the C2/c phase almost disappeared in AP-BiCr_1−xFe_xO₃ with 0.2 ≤ x ≤ 0.3. Fundamental, strong reflections of HP-BiCr_1−xFe_xO₃ and AP-BiCr_1−xFe_xO₃ were almost unchanged; on the other hand, weak superstructure reflections were different and showed clear signs of strong anisotropic broadening and incommensurate positions. These structural features prevented us from determining their room-temperature structures. On the other hand, HP-BiCr_1−xFe_xO₃ and AP-BiCr_1−xFe_xO₃ showed high-temperature structural phase transitions to the GdFeO₃-type Pnma modification at T_srt = 450 K (x = 0.1), T_srt = 480 K (x = 0.2), T_srt = 510 K (x = 0.3), and T_srt = 546 K (x = 0.4). Crystal structures of the GdFeO₃-type Pnma modifications of all the samples were investigated by synchrotron powder X-ray diffraction. Magnetic properties of HP-BiCr_1−xFe_xO₃ and AP-BiCr_1−xFe_xO₃ were quite close to each other (HP vs. AP), and the x = 0.2 samples demonstrated negative magnetization phenomena without signs of the exchange bias effect. Full article

We present structural, morphological, optical and photocatalytic properties of multiferroic Bi_0.98Ba_0.02FeO₃ (BBFO2) perovskite thin films prepared by a combined sol–gel and spin-coating method. X-ray diffraction (XRD) analysis revealed that all the perovskite films consisted of the stable polycrystalline rhombohedral phase structure (space group R3c) with a tolerance factor of 0.892. By using Rietveld refinement of diffractogram XRD data, crystallographic parameters, such as bond angle, bond length, atom position, unit cell parameters, and electron density measurements were computed. Scanning electron microscopy (SEM) allowed us to assess the homogeneous and smooth surface morphology of the films with a small degree of porosity, while chemical surface composition characterization by X-ray photoelectron spectroscopy (XPS) showed the presence of Bi, Fe, O and the doping element Ba. Absorption measurements allowed us to determine the energy band gap of the films, while photoluminescence measurements have shown the presence of oxygen vacancies, which are responsible for the enhanced photocatalytic activity of the material. Photocatalytic degradation experiments of Methylene Blue (MB), Methyl orange (MO), orange G (OG), Violet and Rhodamine B (RhB) performed on top of BBFO2 thin films under solar light showed the degradation of all pollutants in varying discoloration efficiencies, ranging from 81% (RhB) to 54% (OG), 53% (Violet), 47% (MO) and 43% (MB). Full article

The advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(Zr_0.52Ti_0.48)O₃-0.25BiFeO₃ (PZT-25BFO) thin film. Excitingly, PZT-25BFO thin film exhibits an exceptional capacitive energy storage density (W_rec = 24.61–39.76 J/cm³) and a high efficiency (η = 53.78–72.74%). Furthermore, the dielectric energy storage density and efficiency enhance simultaneously with increasing thickness of the thin film. However, the loss factor shows the opposite trend. Specifically, the 12-layer PZT-25BFO thin film demonstrates the optimal properties, boasting a significant energy storage density (15.73 J/cm³), a high efficiency (77.65%), and remarkable thermal stability (±0.55% variation) from 303 K to 383 K at 1000 kV/cm. This excellent thermal stability can be attributed to the residual stress resulting from a phase transition from the rhombohedral to tetragonal phase. The result offers valuable guidance for the development of ferroelectric thin films in high-power capacitive energy storage applications. Full article

BiFeO₃ (BFO) films with ferroelectricity are the most promising candidates regarding the next generation of storage devices and sensors. The comprehensive understanding of ferroelectric switchable properties is challenging and critical to robust domain wall nanoelectronics. Herein, the domain dynamic was explored in detail under external bias conditions using scanning probe microscopy, which is meaningful for the understanding of domain dynamics and the foundation of ferroelectric devices. The results show that domain reversal occurred under external electric fields with sufficient energy excitation, combined with the existence of a charged domain wall. These findings extend the domain dynamic and current paths in ferroelectric films and shed light on the potential applications for ferroelectric devices. Full article

Epitaxial strain is known to significantly influence the structural and functional properties of oxide thin films. However, its impact on point defect concentration has been less explored. Due to the challenges in experimentally measuring thin-film stoichiometry, computational studies become crucial. In this work, we use first-principles calculations based on density functional theory to investigate the formation and stability of Bi vacancies and Bi-O vacancy pairs in BiFeO₃ (BFO) under (111) epitaxial strain. Our results demonstrate that compressive strain (−4%) decreases the formation enthalpy of Bi vacancies by 0.88 eV, whereas tensile strain (4%) increases it by 0.39 eV. Out-of-plane (OP) Bi-O vacancy pairs exhibit enhanced stability under both compressive and tensile strain, with formation enthalpy reductions of 1.49 eV and 1.05 eV, respectively. In contrast, in-plane (IP) vacancy pairs are stabilized under compressive strain but are insensitive to tensile strain. Finally, we discuss how these findings influence Bi stoichiometry during thin-film growth and the role of local strain fields in the formation of conducting domain walls. Full article

Bismuth ferrite (BiFeO₃, BFO) is one of the few single-phase crystalline compounds exhibiting strong multiferroic properties at room temperature, which makes it promising for use in various fields of science and technology. The remarkable characteristics of BFO at the nanoscale position it as a compelling candidate for enhancing the functionalities of polymeric nanocomposite materials. In this study, we explore the fabrication of polyvinylidene fluoride (PVDF) nanocomposites with a variable content of BFO nanopowders (0, 5, 10, 15, 20, and 25 wt%) by solution casting in the form of thin films with the thickness of ~60 µm. Our findings reveal that the presence of BFO nanoparticles slightly facilitates the formation of β- and γ-phases of PVDF, known for their enhanced piezoelectric properties, thereby potentially expanding the utility of PVDF-based materials in sensors, actuators, and energy harvesting devices. On the other hand, the increase in filler concentration leads to enlarged spherulite diameter and porosity of PVDF, as well as an increase in filler content above 20 wt% resulting in a decrease in the degree of crystallinity. The structural changes in the surface were found to increase the hydrophobicity of the nanocomposite surface. Magnetometry indicates that the magnetic properties of nanocomposite are influenced by the BFO nanoparticle content with the saturation magnetization at ~295 K ranging from ~0.08 emu/g to ~0.8 emu/g for samples with the lowest and higher BFO content, respectively. Full article

To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO₃ films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal–organic decomposition process. The effect of the annealing atmosphere on the performance of BiFeO₃ films was assessed at 440 ± 5 °C. By using a N₂-rich atmosphere, a large remnant polarization (P_r~78.1 μC/cm² @ 1165.2 kV/cm), and a high rectangularity (~91.3% @ 1165.2 kV/cm) of the P-E loop, excellent charge-retaining ability of up to 1.0 × 10³ s and outstanding fatigue resistance after 1.0 × 10⁹ switching cycles could be observed. By adopting a N₂-rich atmosphere and aluminum foil substrates, acceptable electrical properties (P_r~70 μC/cm² @ 1118.1 kV/cm) of the BiFeO₃ films were achieved at the very low annealing temperature of 365 ± 5 °C. These results offer a new approach for lowering the annealing temperature for integrated ferroelectrics in high-density FeRAM applications. Full article

Bismuth ferrite BiFeO₃ (BFO)-based ferroelectrics have great potential as inorganic perovskite-like oxides for future solar cells applications due to their unique physical properties. In this work, La and Mn co-doped BFO thin films with compositions Bi_0.9La_0.1(Fe_1−xMn_x)O₃ (x = 0, 0.05, 0.1, 0.15) (denoted as BLF, BLFM5, BLFM10, BLFM15, respectively) were prepared via a sol–gel technique on indium tin oxide (ITO) glass. All the films are monophasic, showing good crystallinity. The optical bandgap E_g was found to decrease monotonously with an increase in the Mn doping amount. Compared with other compositions, the BLFM5 sample exhibits a better crystallinity and less oxygen vacancies as indicated by XRD and XPS measurements, thereby achieving a better J–V performance. Based on BLFM5 as the light absorbing layer, the ITO/ZnO/BLFM5/Pt and ITO/ZnO/BLFM5/NiO/Pt heterostructure devices were designed and characterized. It was found that the introduction of the ZnO layer increases both the open circuit voltage (V_oc) and the short circuit current density (J_sc) with V_oc = 90.2 mV and J_sc = 6.90 μA/cm² for the Pt/ BLFM5/ZnO/ITO device. However, the insertion of the NiO layer reduces both V_oc and J_sc, which is attributed to the weakened built-in electric field at the NiO/BLFM5 interface. Full article

The atomic layer deposition method allows for the production of a thin film with a high aspect ratio on the uneven surface of titanium dioxide nanotubes TiO₂(Nt). A modified BiFeO₃/TiO₂(Nt)/Ti (BFOT) structure with controllable electrical characteristics was obtained. BFOT possesses both ferroelectric and semiconductor properties with nonlinear conductivity dependent on the magnitude and duration of the voltage supply. Analysis of the temperature dependence of charge variation showed leakage currents in the BFOT structure due to the capture and release of charge carriers from defect levels. Surface modification of nanotubes with the multiferroic BiFeO₃ allows for the creation of semiconductors with adaptive functional properties. Full article

The strain engineering effects induced by different means, e.g., the substrate lattice mismatch and/or chemical doping, on the functional properties of perovskite thin films have triggered interest in the use of these materials in different applications such as energy storage/generation or photonics. The effects of the film’s thickness and strain state of the structure for the lead-free perovskite ferrite-based materials (BiFeO₃-BFO; Y-doped BiFeO₃-BYFO; LaFeO₃-LFO) on their functional properties are highlighted here. As was previously demonstrated, the dielectric properties of BFO epitaxial thin films are strongly affected by the film thickness and by the epitaxial strain induced by the lattice mismatch between substrate and film. Doping the BiFeO₃ ferroelectric perovskite with rare-earth elements or inducing a high level of structural deformation into the crystalline structure of LaFeO₃ thin films have allowed the tuning of functional properties of these materials, such as dielectric, optical or photocatalytic ones. These changes are presented in relation to the appearance of complex ensembles of nanoscale phase/nanodomains within the epitaxial films due to strain engineering. However, it is a challenge to maintain the same level of epitaxial strain present in ultrathin films (<10 nm) and to preserve or tune the positive effects in films of thicknesses usually higher than 30 nm. Full article

The effect of ferromagnetic CaMnO₃ (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO₃ is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed that the prepared films exhibit a ferromagnetic behavior at a low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric-like behavior with a pinched P–E hysteresis loop for 5% CMO doping BFO, resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10% CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8 V is observed for high doped film that can be linked to the ferroelectric polarization switching. Full article