Search Results (176)

This study presents a reconfigurable optical convolutional neural network (CNN) architecture that integrates a crossbar switch network into a smart-pixel-based optical CNN (SPOCNN) framework. The SPOCNN leverages smart pixel light modulators (SPLMs), enabling high-speed and massively parallel optical computation. To address the challenge of data rearrangement between CNN layers—especially in multi-channel and deep-layer processing—a crossbar switch network is introduced to perform dynamic spatial permutation and multicast operations efficiently. This integration significantly reduces the number of processing steps required for core operations such as convolution, max pooling, and local response normalization, enhancing throughput and scalability. The architecture also supports bidirectional data flow and modular expansion, allowing the simulation of deeper networks within limited hardware layers. Performance analysis based on an AlexNet-style CNN indicates that the proposed system can complete inference in fewer than 100 instruction cycles, achieving processing speeds of over 1 million frames per second. The proposed architecture offers a promising solution for real-time optical AI applications. The further development of hardware prototypes and co-optimization strategies between algorithms and optical hardware is suggested to fully harness its capabilities. Full article

The performance of optoelectronic devices is affected by various noise sources. A notable factor is the 4.2% lattice mismatch at the Ge/Si interface, which significantly influences the efficiency of Ge-on-Si photodetectors. These noise sources can be analyzed by examining the impact of the Ge/Si interface and deep traps on dark and photocurrents. This study evaluates the impact of these charge traps on key photodetector performance metrics, including responsivity, photo-to-dark current ratio, noise equivalent power (NEP), and specific detectivity (D^*). The trapping effects on charge transport under both forward and reverse bias conditions are monitored through hysteresis analysis. When illuminated with an unmodulated 1550 nm laser, all the key performance metrics exhibit maximum variations at a specific reverse bias. This critical bias marks the transition from saturated to exponential charge transport regimes, where intensified electric fields enhance trap-assisted recombination and thus maximize metric fluctuations. Full article

We propose a high-speed all-optical logic gate design based on silicon racetrack and ring resonators patterned on a silica substrate. The architecture features racetrack resonators at both the input and output, with a central ring resonator enabling the required phase-sensitive interference for logic processing. Logic operations are achieved through the interplay of constructive and destructive interference induced by phase-shifted input beams. Using the finite-difference time-domain (FDTD) method in Lumerical software, we simulate and demonstrate seven fundamental Boolean logic functions, namely XOR, AND, OR, NOT, NOR, NAND, and XNOR, at an operating wavelength of 1.33 µm. The system supports a data rate of 47.94 Gb/s, suitable for ultrafast optical computing. The performance is quantitatively evaluated using the contrast ratio (CR) as the reference metric, with more than acceptable values of 13.09 dB (XOR), 13.84 dB (AND), 13.14 dB (OR), 13.80 dB (NOT), 14.53 dB (NOR), 13.80 dB (NAND), and 14.67 dB (XNOR), confirming strong logic level discrimination. Comparative analysis with existing optical gate designs underscores the advantages of our compact silicon-on-silica structure in terms of speed, CR performance, and integration potential. This study validates the effectiveness of racetrack–ring configurations for next-generation all-optical logic circuits. Full article

Optical networks serve as the backbone of modern communication, requiring statistical analysis and modeling to optimize performance, reliability, and scalability. This review paper explores statistical methodologies for analyzing network characteristics, dimensioning, parameter estimation, and cost prediction of optical networks, and provides a generalized framework based on the idea of convex areas, and link length and shortest path length distributions. Accurate dimensioning and cost estimation are crucial for optical network planning, especially during early-stage design, network upgrades, and optimization. However, detailed information is often unavailable or too complex to compute. Basic parameters like coverage area and node count, along with statistical insights such as distribution patterns and moments, aid in determining the appropriate modulation schemes, compensation techniques, repeater placement, and in estimating the fiber length. Statistical models also help predict link lengths and shortest path lengths, ensuring efficiency in design. Probability distributions, stochastic processes, and machine learning improve network optimization and fault prediction. Metrics like bit error rate, quality of service, and spectral efficiency can be statistically assessed to enhance data transmission. This paper provides a review on statistical analysis and modeling of optical networks, which supports intelligent optical network management, dimensioning of optical networks, performance prediction, and estimation of important optical network parameters with partial information. Full article

Optical networks today constitute the fundamental backbone infrastructure of telecom and cloud operators. A possible medium-term solution to address the enormous increase in traffic demands faced by these operators is to rely on Super C+ L transmission optical bands, which can offer a bandwidth of about 12 THz. In this paper, we propose a methodology to compute the throughput of an optical network based on this solution. The methodology involves detailed physical layer modeling, including the impact of stimulated Raman scattering, which is responsible for energy transfer between the two bands. Two approaches are implemented for throughput evaluation: one assuming idealized Gaussian-modulated signals and the other using real modulation formats. For designing such networks, it is crucial to choose the most appropriate technological solution for optical amplification. This could either be a band-dedicated scheme, which uses a separate amplifier for each of the two bands, or a single-wideband amplifier capable of amplifying both bands simultaneously. The simulation results show that the single-wideband scheme provides an average throughput improvement of about 18% compared to the dedicated scheme when using the Gaussian modulation approach. However, with the real modulation approach, the improvement increases significantly to about 32%, highlighting the benefit in developing single-wideband amplifiers for future applications in Super C+L-band networks. Full article

Gallium Arsenide (GaAs) Schottky technology stands out for its superior performance in terms of conversion loss for terahertz mixers at room temperatures, which establishes it as a dominant solution in receivers for high-data-rate wireless communications. However, Indium Gallium Arsenide (InGaAs) Schottky mixers offer a notable advantage in terms of reduced power requirements due to their lower barrier height, enabling optical pumping with the incorporation of photodiodes acting as photonic local oscillators (LOs). In this study, we present the first comparative analysis of GaAs and InGaAs diode technologies under both electrical and optical pumping, which are also being compared for the first time, particularly in the context of a wireless communication system, transmitting up to 80 Gbps at 0.3 THz using 16-quadrature amplitude modulation (QAM). The terahertz transmitter and the optical receiver’s LO are based on modified uni-traveling-carrier photodiodes (MUTC-PDs) driven by free-running lasers. The investigation covers a total of two mixers, including narrow-band GaAs and InGaAs. The results reveal that, despite InGaAs mixers exhibiting higher conversion loss, the bit error rate (BER) can be as low as that with GaAs. This is attributed to the purity of optically generated LO signals in the receiver. This work positions InGaAs Schottky technology as a compelling candidate for terahertz reception in the context of optical wireless communication systems. Full article

Optoelectronic devices, which combine optics and electronics, are vital for converting light energy into electrical energy. Various solar cell technologies, such as dye-sensitized solar cells (DSSCs), silicon solar cells, and perovskite solar cells, among others, belong to this category. DSSCs have gained significant attention due to their affordability, flexibility, and ability to function under low light conditions. The current research incorporates machine learning (ML) models to predict the performance of a modified Eu³⁺-doped Y₂WO₆/TiO₂ photo-electrode DSSC. Experimental data were collected from the “Dryad Repository Database” to feed into the models, and a detailed data visualization analysis was performed to study the trends in the datasets. The support vector regression (SVR) and Random Forest regression (RFR) models were applied to predict the short-circuit current density (J_sc) and maximum power (P_max) output of the device. Both models achieved reasonably accurate predictions, and the RFR model attained a better prediction response, with the percentage difference between the experimental data and model prediction being 0.73% and 1.01% for the J_sc and P_max respectively, while the SVR attained a percentage difference of 1.22% and 3.54% for the J_sc and P_max respectively. Full article

Understanding microscale dynamic behavior in heterogeneous materials (e.g., polycrystalline or semiconductor systems) under impact loading requires diagnostics capable of resolving ~100 μm features. This study introduces a 19-core fiber-optic array probe with 100 μm spatial resolution, integrated with DISAR velocimetry on a light gas gun platform, enabling two-dimensional continuous measurement of free-surface velocity. The system overcomes limitations of conventional single-point methods (e.g., VISAR’s millimeter-scale resolution and reflectivity constraints) by achieving nanosecond temporal resolution and sub-nanometer displacement sensitivity. Under ~8 GPa impact loading, the probe captures spatiotemporal velocity heterogeneity in polycrystalline materials, including localized pull-back signals and periodic oscillations caused by shock wave reflections at microstructural interfaces. These observations reveal dynamic processes such as damage initiation and evolution, directly linking velocity profiles to microscale material response. The results provide experimental evidence of how grain-scale defects influence shock propagation and energy dissipation, advancing predictive models for extreme-condition material performance. This high-resolution, multi-channel approach offers a paradigm shift in diagnosing heterogeneous material behavior under high-strain-rate loading. Full article

Hyperspectral LiDAR (HSL) is a promising active detection technique for underwater positioning and remote sensing, enabling the simultaneous acquisition of three-dimensional topographic and spectral information of underwater targets. This study presents an advanced underwater hyperspectral LiDAR (UDHSL) system with a spectral range of 450–700 nm, adjustable spectral bandwidth of 10–300 nm, and tunable repetition frequency of 50 kHz to 1 MHz. The system achieves high precision with a laser divergence angle of ≤1 mrad, pulse width of 7 ns, laser energy of 7.5 µJ, ranging resolution of 1.13 cm and ranging accuracy of 1.02 m@distance of 27 m. Hyperspectral point clouds spanning 11 bands (450–650 nm) are generated during 3D pool experiments. The distance-colored point clouds precisely align with the geometric characteristics of targets, the normalized intensity-colored point clouds across spectral bands exhibit discriminative capabilities for target identification, and the color-composite point clouds approximate the true colors of targets, collectively validating the system’s ability to concurrently acquire spectral and topographic data. These results underscore the potential of this technology for underwater exploration and positioning applications. Full article

The demand for faster and more efficient optical communication systems has driven significant advancements in integrated photonic technologies, with optical switches playing a pivotal role in high-speed, low-latency data transmission. In this work, we introduce a novel design for an adiabatic optical switch based on the thermo-optic effect using silicon-on-insulator (SOI) technology. The approach relies on slow optical signal evolution, minimizing power dissipation and addressing challenges of traditional optical switches. Machine learning (ML) techniques were employed to optimize waveguide designs, ensuring polarization-independent (PI) and single-mode (SM) conditions. The proposed design achieves low-loss and high-performance operation across a broad wavelength range (1500–1600 nm). We demonstrate the effectiveness of a Y-junction adiabatic switch, with a tapered waveguide structure, and further enhance its performance by employing thermo-optic effects in hydrogenated amorphous silicon (a-Si:H). Our simulations reveal high extinction ratios (ERs) exceeding 30 dB for TE mode and 15 dB for TM mode, alongside significant improvements in coupling efficiency and reduced insertion loss. This design offers a promising solution for integrating efficient, low-energy optical switches into large-scale photonic circuits, making it suitable for next-generation communication and high-performance computing systems. Full article

Dual-gate metal-oxide-semiconductor transistors have attracted considerable interest due to their high threshold voltage control capability, higher drain current, and the ability to alleviate the impact of carrier surface scattering at the channel/dielectric interface. However, their applications in the monolithic integration of scaled devices encounter challenges stemming from the interaction between the pre-treated channel layer and its covering dielectric. Here, we demonstrate the successful realization of a scaled back-end-of-line (BEOL) compatible dual-gate indium–gallium–zinc oxide (IGZO) transistor with a channel length (L_ch) scaled down to 150 nm and a channel thickness (T_ch) of 4.2 nm. After precisely adjusting the metal ratio to In_0.24Ga_0.58Zn_0.18O and employing O₃ as an oxygen precursor for the deposition of Al₂O₃ as the top-gate dielectric layer, a high maximum current of 1.384 mA was attained under top-gate control, while a high current of 1.956 mA was achieved under bottom-gate control. Additionally, a high current on/off ratio (I_on/off > 10⁹) was achieved for the dual gate. Careful calculations reveal that the field-effective mobility (μ_eff) reaches 11.68 cm²V⁻¹s⁻¹ under top-gate control and 22.46 cm²V⁻¹s⁻¹ under bottom-gate control. We demonstrate excellent dual-gate low-voltage modulation performance, with a high current switch ratio of 3 × 10⁵ at L_ch = 300 nm and 2 × 10⁴ at L_ch = 150 nm achieved by only 1 V modulation voltage, accompanied by a normalized current variation higher than 10⁶. Overall, our devices show the remarkable electrical performance characteristics, highlighting their potential applications in high-performance electronic circuits. Full article

Despite extensive research on semiconductor materials, the influence of temperature and magnetic field on the optical quantum transitions within semiconductors remains insufficiently understood. We therefore investigated the Optical Quantum Transition Line Properties (OQTLP), including line shapes (LS) and line widths (LW), as functions of temperature and magnetic field in electron–piezoelectric-phonon-interacting systems within semiconductor materials. A theoretical framework incorporating projection-based equations and equilibrium average projection was applied to GaAs and CdS. Similarly, LW generally increases with magnetic field in a square-well confinement potential across most temperature regions. However, in high magnetic fields at low temperatures, LW decreases for GaAs. Additionally, LW increases with rising temperature. We also compare the LW and LS for transitions within intra- and inter-Landau levels to analyze the quantum transition process. The results indicate that intra-Landau level transitions primarily dominate the temperature dependence of quantum transitions in GaAs and CdS. Full article

In this study, a model of a double-quantum-dot system driven by two-mode microwave photons is presented. The quantum master equation is derived from the system’s Hamiltonians, and the expression for the steady-state current is obtained. Electronic tunneling properties are then analyzed. The results revealed that different two-mode quantum microwave photons have varying effects on the tunneling current within the double-quantum-dot system, with a steplike current trend emerging. The tunneling current showed pronounced negative differential conductance for both coherent and squeezed microwave photons. Furthermore, the tunneling current was significantly influenced by changing the squeezing coefficient and phase. The asymmetric evolution of the tunneling current under varying bias voltages also depends on the asymmetry in system parameters. These findings are crucial for manipulating the transport properties of double-quantum-dot systems in nanostructured devices. Full article

To explain the negative capacitance (NC) characteristic of multi-quantum-well (MQW) LEDs, we calculated the continuity equation for a 10-period AlGaInP/GaInP multi-quantum-well (MQW) LED with a mesa size of 90 × 150 μm and build an MQW LED capacitor model. The carrier concentrations and capacitance–voltage characteristics across every quantum well region were analyzed by accounting for carrier spontaneous, Auger, and SRH recombination. In our model, a dynamic carrier lifetime iteration method with an iterative error of less than 1 × 10⁻¹⁴ ns was used to decouple carrier lifetime and electric field variables in the carrier continuity equation, providing a new way to enhance the accuracy of MQW continuous equations. Based on the calculated carrier concentration and lifetime of MQWs, we derived a multilayer epitaxial material LED capacitance equivalent circuit. The theoretical model characterizes the negative capacitance phenomenon at 1.75 V, which is consistent with the actual test results of the sample. Our theoretical analysis indicates that the negative capacitance mainly comes from the carrier recombination in the MQW region. Under low-frequency AC bias conditions, the negative capacitance phenomenon becomes more obvious. This work provides a useful reference for analyzing the capacitance and bandwidth characteristics of LEDs in the fields of display dimming and visible-light communication. Full article

Interference gating (iGate) has emerged as a groundbreaking technique for ultrafast time-resolved electron holography in transmission electron microscopy, delivering nanometer spatial and nanosecond temporal resolution with minimal technological overhead. This study employs iGate to dynamically observe the local projected electric potential within the space-charge region of a contacted transmission electron microscopy (TEM) lamella manufactured from a silicon diode during switching between unbiased and reverse-biased conditions, achieving a temporal resolution of 25 ns at a repetition rate of 3 MHz. By synchronizing the holographic acquisition with the applied voltage, this approach enables the direct visualization of time-dependent potential distributions with high precision. Complementary static and dynamic experiments reveal a remarkable correspondence between modeled and measured projected potentials, validating the method’s robustness. The observed dynamic phase progressions resolve and allow one to differentiate between localized switching dynamics and preparation-induced effects, such as charge recombination near the sample edges. These results establish iGate as a transformative tool for operando investigations of semiconductor devices, paving the way for advancing the nanoscale imaging of high-speed electronic processes. Full article