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Authors = Tingzhu Wu ORCID = 0000-0001-9453-6823

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10 pages, 1703 KB  
Article
The Performance Degradation of Red, Green, and Blue Micro-LEDs Under High-Temperature Electrical Stress
by Changdong Tong, Yu Liu, Quan Deng, Li Pan, Guolong Chen, Yijun Lu, Tingzhu Wu, Zhong Chen and Weijie Guo
Crystals 2025, 15(7), 604; https://doi.org/10.3390/cryst15070604 - 27 Jun 2025
Viewed by 1560
Abstract
In this work, the degradation in luminous characteristics of red, green, and blue (RGB) micro-LEDs (10 µm × 10 µm) under electrical stress at 360 K has been investigated. After 280 h of aging, the AlGaInP-based red micro-LEDs exhibit a 31.7% reduction in [...] Read more.
In this work, the degradation in luminous characteristics of red, green, and blue (RGB) micro-LEDs (10 µm × 10 µm) under electrical stress at 360 K has been investigated. After 280 h of aging, the AlGaInP-based red micro-LEDs exhibit a 31.7% reduction in maximum external quantum efficiency, which is significantly greater than the reductions observed in InGaN-based green and blue micro-LEDs. Specifically, the peak wavelength redshift by 0.6 nm, and blueshift 1.0 nm, and 0.5 nm for RGB micro-LEDs, respectively. The color purity of green and blue micro-LEDs decreases by 3.6% and 0.7%, respectively, resulting in a 7% reduction in color gamut. Full article
(This article belongs to the Special Issue II-VI and III-V Semiconductors for Optoelectronic Devices)
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19 pages, 3961 KB  
Review
Perspectives on UVC LED: Its Progress and Application
by Tsung-Chi Hsu, Yu-Tsai Teng, Yen-Wei Yeh, Xiaotong Fan, Kuo-Hsiung Chu, Su-Hui Lin, Kuo-Kuang Yeh, Po-Tsung Lee, Yue Lin, Zhong Chen, Tingzhu Wu and Hao-Chung Kuo
Photonics 2021, 8(6), 196; https://doi.org/10.3390/photonics8060196 - 31 May 2021
Cited by 99 | Viewed by 17863
Abstract
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the [...] Read more.
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor Photonic Devices)
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32 pages, 7866 KB  
Review
Micro-LED as a Promising Candidate for High-Speed Visible Light Communication
by Konthoujam James Singh, Yu-Ming Huang, Tanveer Ahmed, An-Chen Liu, Sung-Wen Huang Chen, Fang-Jyun Liou, Tingzhu Wu, Chien-Chung Lin, Chi-Wai Chow, Gong-Ru Lin and Hao-Chung Kuo
Appl. Sci. 2020, 10(20), 7384; https://doi.org/10.3390/app10207384 - 21 Oct 2020
Cited by 133 | Viewed by 16622
Abstract
Visible Light Communication (VLC) technology is an emerging technology using visible light modulation that, in the modern world, will mainly facilitate high-speed internet connectivity. VLC provides tremendous advantages compared to conventional radio frequency, such as a higher transmission rate, high bandwidth, low-power consumption, [...] Read more.
Visible Light Communication (VLC) technology is an emerging technology using visible light modulation that, in the modern world, will mainly facilitate high-speed internet connectivity. VLC provides tremendous advantages compared to conventional radio frequency, such as a higher transmission rate, high bandwidth, low-power consumption, no health hazards, less interference, etc., which make it more prominent in recent days. Due to their outstanding features, including low cost, low power consumption, etc., µ-light-emitting diodes (LEDs) have gained considerable attention for VLC implementation, but mostly for the ability to be used for lighting as well as communications. In this review paper, we will focus mainly on recent developments in VLC applications and various factors affecting the modulation bandwidth of VLC devices. Numerous factors, such as quantum confined stark effect (QCSE), carrier lifetime, carrier recombination time, crystal orientation, etc. affect the modulation bandwidth of LEDs, and more information will be discussed in the following sections. This paper will focus on VLC applications based on LEDs but mainly on semipolar μ-LEDs and μ-LED-based arrays with high bandwidths. Another important application of VLC is underwater optical wireless communication (UOWC), which has drawn a huge interest in marine exploration and underwater connectivity, but still faces some challenges because visible light is being used. In addition, this paper will focus on how the current VLC system modulation bandwidth can be enhanced. Many methods have been introduced, such as decreasing the active layer thickness or effective active area or using doping, but the bandwidth is restricted by the recombination time when the system configuration reaches its limit. Therefore, it is important to find alternative ways such as optimizing the system, using the blue filter or using the equalization technology, which will be addressed later. Overall, this review paper provides a brief overview of the VLC-based system performance and some of its potential prospects. Full article
(This article belongs to the Section Optics and Lasers)
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33 pages, 9414 KB  
Review
The Stability of Metal Halide Perovskite Nanocrystals—A Key Issue for the Application on Quantum-Dot-Based Micro Light-Emitting Diodes Display
by Zhibin Shangguan, Xi Zheng, Jing Zhang, Wansheng Lin, Weijie Guo, Cheng Li, Tingzhu Wu, Yue Lin and Zhong Chen
Nanomaterials 2020, 10(7), 1375; https://doi.org/10.3390/nano10071375 - 15 Jul 2020
Cited by 48 | Viewed by 8745
Abstract
The metal halide perovskite nanocrystal (MHP-NC), an easy-to-fabricate and low cost fluorescent material, is recognized to be among the promising candidates of the color conversion material in the micro light-emitting diode (micro-LED) display, providing that the stability can be further enhanced. It is [...] Read more.
The metal halide perovskite nanocrystal (MHP-NC), an easy-to-fabricate and low cost fluorescent material, is recognized to be among the promising candidates of the color conversion material in the micro light-emitting diode (micro-LED) display, providing that the stability can be further enhanced. It is found that the water steam, oxygen, thermal radiation and light irradiation—four typical external factors in the ambient environment related to micro-LED display—can gradually alter and destroy the crystal lattice. Despite the similar phenomena of photoluminescence quenching, the respective encroaching processes related to these four factors are found to be different from one another. The encroaching mechanisms are collected and introduced in separate categories with respect to each external factor. Thereafter, a combined effect of these four factors in an environment mimicking real working conditions of micro-LED display are also introduced. Finally, recent progress on the full-color application of MHP-NC is also reviewed in brief. Full article
(This article belongs to the Special Issue Quantum Dots and Micro-LED Display)
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29 pages, 10264 KB  
Review
Advances in Quantum-Dot-Based Displays
by Yu-Ming Huang, Konthoujam James Singh, An-Chen Liu, Chien-Chung Lin, Zhong Chen, Kai Wang, Yue Lin, Zhaojun Liu, Tingzhu Wu and Hao-Chung Kuo
Nanomaterials 2020, 10(7), 1327; https://doi.org/10.3390/nano10071327 - 6 Jul 2020
Cited by 117 | Viewed by 17477
Abstract
In terms of their use in displays, quantum dots (QDs) exhibit several advantages, including high illumination efficiency and color rendering, low-cost, and capacity for mass production. Furthermore, they are environmentally friendly. Excellent luminescence and charge transport properties of QDs led to their application [...] Read more.
In terms of their use in displays, quantum dots (QDs) exhibit several advantages, including high illumination efficiency and color rendering, low-cost, and capacity for mass production. Furthermore, they are environmentally friendly. Excellent luminescence and charge transport properties of QDs led to their application in QD-based light-emitting diodes (LEDs), which have attracted considerable attention in display and solid-state lighting applications. In this review, we discuss the applications of QDs which are used on color conversion filter that exhibit high efficiency in white LEDs, full-color micro-LED devices, and liquid-type structure devices, among others. Furthermore, we discuss different QD printing processes and coating methods to achieve the full-color micro-LED. With the rise in popularity of wearable and see-through red, green, and blue (RGB) full-color displays, the flexible substrate is considered as a good potential candidate. The anisotropic conductive film method provides a small controllable linewidth of electrically conductive particles. Finally, we discuss the advanced application for flexible full-color and highly efficient QD micro-LEDs. The general conclusion of this study also involves the demand for a more straightforward QD deposition technique, whose breakthrough is expected. Full article
(This article belongs to the Special Issue Quantum Dots and Micro-LED Display)
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15 pages, 3199 KB  
Article
Investigation on Key Parameters in the Fabrication of Stamps for Transfer Printing of Micro Devices
by Changwen Su, Yue Lin, Tien-Mo Shih, Hao Lu, Yang Gao, Jia-En Huang, Yi-Jun Lu, Tingzhu Wu, Zhong Chen and Weijie Guo
Appl. Sci. 2020, 10(13), 4604; https://doi.org/10.3390/app10134604 - 2 Jul 2020
Cited by 4 | Viewed by 4196
Abstract
For the past few years, the transfer printing method has been developed and has secured numerous advantages. Here, via both experiments and analyses, we have focused on identifying key parameters and optimizing their values in the fabrication process of stamps for transfer-printing micro-devices. [...] Read more.
For the past few years, the transfer printing method has been developed and has secured numerous advantages. Here, via both experiments and analyses, we have focused on identifying key parameters and optimizing their values in the fabrication process of stamps for transfer-printing micro-devices. Specifically, the elastic modulus of posts is measured using the atomic force microscope and the Derjaguin, Muller, and Toporov model. Based on mold morphologies data, we subsequently explore the law of photoresist development under different design widths as well as development time, establish mathematical models, and offer relevant explanations for the formation of various developmental topographies. Furthermore, the relationship between the elastic modulus and these stamp-fabrication parameters has also been analyzed and confirmed. Hopefully, the proposed work can provide the guidance for fabricating reliable stamps in the future. Full article
(This article belongs to the Special Issue Advanced Mini-LED/Micro-LED Displays and Materials)
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14 pages, 14126 KB  
Article
High-Resolution Image Inpainting Based on Multi-Scale Neural Network
by Tingzhu Sun, Weidong Fang, Wei Chen, Yanxin Yao, Fangming Bi and Baolei Wu
Electronics 2019, 8(11), 1370; https://doi.org/10.3390/electronics8111370 - 19 Nov 2019
Cited by 17 | Viewed by 4929
Abstract
Although image inpainting based on the generated adversarial network (GAN) has made great breakthroughs in accuracy and speed in recent years, they can only process low-resolution images because of memory limitations and difficulty in training. For high-resolution images, the inpainted regions become blurred [...] Read more.
Although image inpainting based on the generated adversarial network (GAN) has made great breakthroughs in accuracy and speed in recent years, they can only process low-resolution images because of memory limitations and difficulty in training. For high-resolution images, the inpainted regions become blurred and the unpleasant boundaries become visible. Based on the current advanced image generation network, we proposed a novel high-resolution image inpainting method based on multi-scale neural network. This method is a two-stage network including content reconstruction and texture detail restoration. After holding the visually believable fuzzy texture, we further restore the finer details to produce a smoother, clearer, and more coherent inpainting result. Then we propose a special application scene of image inpainting, that is, to delete the redundant pedestrians in the image and ensure the reality of background restoration. It involves pedestrian detection, identifying redundant pedestrians and filling in them with the seemingly correct content. To improve the accuracy of image inpainting in the application scene, we proposed a new mask dataset, which collected the characters in COCO dataset as a mask. Finally, we evaluated our method on COCO and VOC dataset. the experimental results show that our method can produce clearer and more coherent inpainting results, especially for high-resolution images, and the proposed mask dataset can produce better inpainting results in the special application scene. Full article
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11 pages, 3337 KB  
Article
Ultrawide Color Gamut Perovskite and CdSe/ZnS Quantum-Dots-Based White Light-Emitting Diode with High Luminous Efficiency
by Chih-Hao Lin, Chieh-Yu Kang, Akta Verma, Tingzhu Wu, Yung-Min Pai, Tzu-Yu Chen, Chun-Lin Tsai, Ya-Zhu Yang, S.K. Sharma, Chin-Wei Sher, Zhong Chen, Po-Tseng Lee, Shu-Ru Chung and Hao-Chung Kuo
Nanomaterials 2019, 9(9), 1314; https://doi.org/10.3390/nano9091314 - 14 Sep 2019
Cited by 24 | Viewed by 6427
Abstract
We demonstrate excellent color quality of liquid-type white light-emitting diodes (WLEDs) using a combination of green light-emitting CsPbBr3 and red light-emitting CdSe/ZnS quantum dots (QDs). Previously, we reported red (CsPbBr1.2I1.8) and green (CsPbBr3) perovskite QDs (PQDs)-based [...] Read more.
We demonstrate excellent color quality of liquid-type white light-emitting diodes (WLEDs) using a combination of green light-emitting CsPbBr3 and red light-emitting CdSe/ZnS quantum dots (QDs). Previously, we reported red (CsPbBr1.2I1.8) and green (CsPbBr3) perovskite QDs (PQDs)-based WLEDs with high color gamut, which manifested fast anion exchange and stability issues. Herein, the replacement of red PQDs with CdSe/ZnS QDs has resolved the aforementioned problems effectively and improved both stability and efficiency. Further, the proposed liquid-type device possesses outstanding color gamut performance (132% of National Television System Committee and 99% of Rec. 2020). It also shows a high efficiency of 66 lm/W and an excellent long-term operation stability for over 1000 h. Full article
(This article belongs to the Special Issue Quantum Dots and Micro-LED Display)
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12 pages, 2383 KB  
Article
Stability of Hybrid Organic-Inorganic Perovskite CH3NH3PbBr3 Nanocrystals under Co-Stresses of UV Light Illumination and Temperature
by Weijie Guo, Nan Chen, Binbin Xu, Yijun Lu, Bin Li, Tingzhu Wu, Qijin Cheng, Yang Li, Jin Chen, Yue Lin and Zhong Chen
Nanomaterials 2019, 9(8), 1158; https://doi.org/10.3390/nano9081158 - 13 Aug 2019
Cited by 10 | Viewed by 5472
Abstract
Hybrid organic–inorganic metal halide perovskite nanocrystals (NCs) are among the candidates for color conversion materials in displays, especially in NC-based micro-light-emitting diode (micro-LED) displays. However, these NCs are still lacking long-term stability, which has hindered their large-scale applications. We mimic the working conditions, [...] Read more.
Hybrid organic–inorganic metal halide perovskite nanocrystals (NCs) are among the candidates for color conversion materials in displays, especially in NC-based micro-light-emitting diode (micro-LED) displays. However, these NCs are still lacking long-term stability, which has hindered their large-scale applications. We mimic the working conditions, which include ultraviolet light illumination at 323 K and three different types of atmosphere (N2, vacuum, and air), respectively, to investigate the stability of CH3NH3PbBr3 NCs embedded in the polyvinylidene fluoride matrix. X-ray diffraction results indicate the generation of NH4Pb2Br5, which is produced from the encapsulated CH3NH3PbBr3 NCs in all three atmospheres, and the decomposition generates a large amount of accompanying interface defects at the surface area of NCs, resulting in the significant decrease of the photoluminescence (PL) intensity. This work highlights the stability-related mechanism of CH3NH3PbBr3 NCs under combined external stresses that mimic operating conditions. In addition, this work also suggests a new method for conducting aging tests and contributes to developing effective routes towards higher stability of perovskite NCs. Full article
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9 pages, 2106 KB  
Article
A Novel Liquid Packaging Structure of Deep-Ultraviolet Light-Emitting Diodes to Enhance the Light-Extraction Efficiency
by Chieh-Yu Kang, Chih-Hao Lin, Tingzhu Wu, Po-Tsung Lee, Zhong Chen and Hao-Chung Kuo
Crystals 2019, 9(4), 203; https://doi.org/10.3390/cryst9040203 - 12 Apr 2019
Cited by 26 | Viewed by 5911
Abstract
To realize high-efficiency, AlGaN-based, deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency and reducing thermal resistance is very crucial. We proposed a liquid packaging structure that could enhance optical power by 27.2% and 70.7% for flat type and lens type 281-nm DUV-LEDs, respectively. [...] Read more.
To realize high-efficiency, AlGaN-based, deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency and reducing thermal resistance is very crucial. We proposed a liquid packaging structure that could enhance optical power by 27.2% and 70.7% for flat type and lens type 281-nm DUV-LEDs, respectively. A significant improvement effect at different wavelengths, such as 268 nm and 310 nm, was also observed. Furthermore, using the liquid packaging structure, the thermal resistance was reduced by 30.3% compared to the conventional structure. Finally, the reliability of liquid packaging DUV-LEDs was tested. The light output maintenance of liquid packaging DUV-LEDs was compared to the conventional structure. Full article
(This article belongs to the Special Issue GaN-Based Optoelectronic Materials and Light Emitting Devices)
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9 pages, 8552 KB  
Article
Ultra-High Light Extraction Efficiency and Ultra-Thin Mini-LED Solution by Freeform Surface Chip Scale Package Array
by Che-Hsuan Huang, Chieh-Yu Kang, Shu-Hsiu Chang, Chih-Hao Lin, Chun-Yu Lin, Tingzhu Wu, Chin-Wei Sher, Chien-Chung Lin, Po-Tsung Lee and Hao-Chung Kuo
Crystals 2019, 9(4), 202; https://doi.org/10.3390/cryst9040202 - 11 Apr 2019
Cited by 28 | Viewed by 6572
Abstract
In this study, we present a novel type of package, freeform-designed chip scale package (FDCSP), which has ultra-high light extraction efficiency and bat-wing light field. For the backlight application, mainstream solutions are chip-scale package (CSP) and surface-mount device package (SMD). Comparing with these [...] Read more.
In this study, we present a novel type of package, freeform-designed chip scale package (FDCSP), which has ultra-high light extraction efficiency and bat-wing light field. For the backlight application, mainstream solutions are chip-scale package (CSP) and surface-mount device package (SMD). Comparing with these two mainstream types of package, the light extraction efficiency of CSP, SMD, and FDCSP are 88%, 60%, and 96%, respectively. In addition to ultra-high light extraction efficiency, because of the 160-degree bat-wing light field, FDCSP could provide a thinner and low power consumption mini-LED solution with a smaller number of LEDs than CSP and SMD light source array. Full article
(This article belongs to the Special Issue GaN-Based Optoelectronic Materials and Light Emitting Devices)
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7 pages, 3021 KB  
Article
Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction
by Chih-Chiang Shen, Yun-Ting Lu, Yen-Wei Yeh, Cheng-Yuan Chen, Yu-Tzu Chen, Chin-Wei Sher, Po-Tsung Lee, Ya-Hsuan Shih, Tien-Chang Lu, Tingzhu Wu, Ching-Hsueh Chiu and Hao-Chung Kuo
Crystals 2019, 9(4), 187; https://doi.org/10.3390/cryst9040187 - 1 Apr 2019
Cited by 19 | Viewed by 5703
Abstract
In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of [...] Read more.
In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h. Full article
(This article belongs to the Special Issue GaN-Based Optoelectronic Materials and Light Emitting Devices)
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17 pages, 13919 KB  
Review
Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology
by Tingzhu Wu, Chin-Wei Sher, Yue Lin, Chun-Fu Lee, Shijie Liang, Yijun Lu, Sung-Wen Huang Chen, Weijie Guo, Hao-Chung Kuo and Zhong Chen
Appl. Sci. 2018, 8(9), 1557; https://doi.org/10.3390/app8091557 - 5 Sep 2018
Cited by 740 | Viewed by 57025
Abstract
Displays based on inorganic light-emitting diodes (LED) are considered as the most promising one among the display technologies for the next-generation. The chip for LED display bears similar features to those currently in use for general lighting, but it size is shrunk to [...] Read more.
Displays based on inorganic light-emitting diodes (LED) are considered as the most promising one among the display technologies for the next-generation. The chip for LED display bears similar features to those currently in use for general lighting, but it size is shrunk to below 200 microns. Thus, the advantages of high efficiency and long life span of conventional LED chips are inherited by miniaturized ones. As the size gets smaller, the resolution enhances, but at the expense of elevating the complexity of fabrication. In this review, we introduce two sorts of inorganic LED displays, namely relatively large and small varieties. The mini-LEDs with chip sizes ranging from 100 to 200 μm have already been commercialized for backlight sources in consumer electronics applications. The realized local diming can greatly improve the contrast ratio at relatively low energy consumptions. The micro-LEDs with chip size less than 100 μm, still remain in the laboratory. The full-color solution, one of the key technologies along with its three main components, red, green, and blue chips, as well color conversion, and optical lens synthesis, are introduced in detail. Moreover, this review provides an account for contemporary technologies as well as a clear view of inorganic and miniaturized LED displays for the display community. Full article
(This article belongs to the Special Issue Group III-V Nitride Semiconductor Microcavities and Microemitters)
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14 pages, 32232 KB  
Article
Multi-Azimuth Failure Mechanisms in Phosphor-Coated White LEDs by Current Aging Stresses
by Zhangbao Peng, Ziquan Guo, Tingzhu Wu, Peng Zhuang, Zhicheng Ye, Yuan Shi, Tien-Mo Shih, Yijun Lu, Hao-Chung Kuo and Zhong Chen
Appl. Sci. 2018, 8(4), 610; https://doi.org/10.3390/app8040610 - 12 Apr 2018
Cited by 1 | Viewed by 4125
Abstract
We have experimentally analyzed multi-azimuth degradation mechanisms that govern failures of commercially-available high-power (1 Watt) phosphor-coated white (hppc-W) light-emitting diodes (LEDs) covered with peanut-shaped lenses under three current-stress aging (CSA) conditions. Comprehensive analyses focus on photometric, chromatic, electrical, thermal and packaging characteristics. At [...] Read more.
We have experimentally analyzed multi-azimuth degradation mechanisms that govern failures of commercially-available high-power (1 Watt) phosphor-coated white (hppc-W) light-emitting diodes (LEDs) covered with peanut-shaped lenses under three current-stress aging (CSA) conditions. Comprehensive analyses focus on photometric, chromatic, electrical, thermal and packaging characteristics. At the packaging level, (a) the decrease of the phosphor-conversion efficiency; (b) the yellow-browning of the optical lens; and (c) the darkening of the silver-coated reflective layer deposited with extraneous chemical elements (e.g., C, O, Si, Mg, and Cu, respectively) contribute collectively to the integral degradation of the optical power. By contrast, Ohmic contacts, thermal properties, and angles of maximum intensity remain unchanged after 3840 h aging in three cases. Particularly at the chip level, the formation of point defects increases the number of non-radiative recombination centers, and thus decreases the optical power during aging stages. Nevertheless, in view of the change of the ideality factor, the Mg dopant activation and the annealing effect facilitate the increase of the optical power in two specific aging stages (192 h~384 h and 768 h~1536 h). This work offers a systematic guidance for the development of reliable LED-based light sources in general-lighting areas. Full article
(This article belongs to the Special Issue Highly Efficient UV and Visible Light Sources)
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