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Crystals 2019, 9(4), 187; https://doi.org/10.3390/cryst9040187

Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

1
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
2
Fok Ying Tung Research Institute, Hong Kong University of Science and Technology, Hong Kong 511458, China
3
Crosslight Software Inc., Taiwan Branch, Hsinchu 30013, Taiwan
4
Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China
*
Authors to whom correspondence should be addressed.
Received: 4 March 2019 / Revised: 25 March 2019 / Accepted: 27 March 2019 / Published: 1 April 2019
(This article belongs to the Special Issue GaN-Based Optoelectronic Materials and Light Emitting Devices)
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Abstract

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h. View Full-Text
Keywords: InGaN; VCSEL; tunnel junction InGaN; VCSEL; tunnel junction
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Shen, C.-C.; Lu, Y.-T.; Yeh, Y.-W.; Chen, C.-Y.; Chen, Y.-T.; Sher, C.-W.; Lee, P.-T.; Shih, Y.-H.; Lu, T.-C.; Wu, T.; Chiu, C.-H.; Kuo, H.-C. Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction. Crystals 2019, 9, 187.

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