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Optoelectronic Functional Devices for Sensing Applications
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Optoelectronic Functional Devices for Sensing Applications

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: closed (31 January 2025) | Viewed by 4526

Special Issue Editor

Dr. Laiyuan Wang

E-Mail Website
Guest Editor
School of Flexible Electronics, Sun Yat-Sen University, Shenzhen, China
Interests: ideal interfaces for high-performance optoelectronic devices; field-effect transistors (FETs); neuromorphic devices and computing, neural sensing, and brain–machine interfaces; in situ TEM-device-based analysis of novel physical phenomena such as phase transitions and thermal transport at the microscale of rich structures; phase transition control and the construction of information devices; emerging optoelectronic materials for spintronics

Special Issue Information

Dear Colleagues,

Emerging optoelectronic materials and devices utilize the unique properties of novel emerging materials to design and fabricate much more powerful optoelectronic devices. Emerging optoelectronic materials possess distinctive physical and chemical properties, such as two-dimensional materials with atomic-scale thickness and rich quantum effects and perovskite materials with outstanding optoelectronic conversion efficiency. These properties endow the emerging optoelectronic materials with vast potential applications, including transistors, logic gates, neuromorphic devices, solar cells, photodetectors, and light-emitting diodes.

Currently, with continuous advancements in preparation techniques, emerging optoelectronic materials are spring up, offering new possibilities for the development of optoelectronic devices, including enhancing device performance, multifunctionality, flexibility, and wearability. These trends enable optoelectronic devices to better adapt to complex application environments, broadening their applications range and importance in terms of scientific implications, developmental trends, and overall value.

This Special Issue will cover, but is not limited to, preparation methods and property characterizations of emerging optoelectronic materials, as well as the fabrication of optoelectronic devices for information processing, sensing, logic, neuromorphic, computing, and detecting.

Dr. Laiyuan Wang
Guest Editor

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Keywords

  • emerging semiconductor
  • 2D material
  • perovskite
  • functional molecule
  • transistor
  • sensor
  • photodetector
  • neuromorphic device
  • flexible device
  • quantum information device
  • photonics and optics

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Published Papers (4 papers)

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Research

13 pages, 6452 KiB  
Communication
A Complementary Metal-Oxide-Semiconductor Optoelectronic Analog Front-End Preamplifier with Cross-Coupled Active Loads for Short-Range LiDARs
by Yunji Song, Yejin Choi, Dukyoo Jung, Seonhan Choi and Sung-Min Park
Sensors 2025, 25(4), 1040; https://doi.org/10.3390/s25041040 - 10 Feb 2025
Viewed by 664
Abstract
In this paper, a CMOS optoelectronic analog front-end (AFE) preamplifier with cross-coupled active loads for short range LiDAR applications is presented, which consists of a spatially modulated P+/N-well on-chip avalanche photodiode (APD), the differential input stage with cross-coupled active loads, and [...] Read more.
In this paper, a CMOS optoelectronic analog front-end (AFE) preamplifier with cross-coupled active loads for short range LiDAR applications is presented, which consists of a spatially modulated P+/N-well on-chip avalanche photodiode (APD), the differential input stage with cross-coupled active loads, and an output buffer. Particularly, another on-chip dummy APD is inserted at the differential input node to improve the common-mode noise rejection ratio significantly better than conventional single-ended TIAs. Moreover, the cross-coupled active loads are exploited at the output nodes of the preamplifier not only to help generate symmetric output waveforms, but also to enable the limiting operations even without the following post-amplifiers. In addition, the inductive behavior of the cross-coupled active loads extends the bandwidth further. The proposed AFE preamplifier implemented in a 180-nm CMOS process demonstrate the measured results of 63.5 dB dynamic range (i.e., 1 µApp~1.5 mApp input current recovery), 67.8 dBΩ transimpedance gain, 1.6 GHz bandwidth for the APD capacitance of 490 fF, 6.83 pA⁄√Hz noise current spectral density, 85 dB power supply rejection ratio, and 32.4 mW power dissipation from a single 1.8 V supply. The chip core occupies the area of 206 × 150 µm2. Full article
(This article belongs to the Special Issue Optoelectronic Functional Devices for Sensing Applications)
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14 pages, 14732 KiB  
Communication
A CMOS Optoelectronic Transceiver with Concurrent Automatic Power Control for Short-Range LiDAR Sensors
by Yejin Choi, Juntong Li, Dukyoo Jung, Seonhan Choi and Sung-Min Park
Sensors 2025, 25(3), 753; https://doi.org/10.3390/s25030753 - 26 Jan 2025
Viewed by 833
Abstract
This paper presents an optoelectronic transceiver (OTRx) realized in a 180 nm CMOS technology for applications of short-range LiDAR sensors, in which a modified current-mode single-ended VCSEL driver (m-CMVD) is exploited as a transmitter (Tx) and a voltage-mode fully differential transimpedance amplifier (FD-TIA) [...] Read more.
This paper presents an optoelectronic transceiver (OTRx) realized in a 180 nm CMOS technology for applications of short-range LiDAR sensors, in which a modified current-mode single-ended VCSEL driver (m-CMVD) is exploited as a transmitter (Tx) and a voltage-mode fully differential transimpedance amplifier (FD-TIA) is employed as a receiver (Rx). Especially for Tx, a concurrent automatic power control (APC) circuit is incorporated to compensate for the inevitable increase in the threshold current in a VCSEL diode. For Rx, two on-chip spatially modulated P+/N- well avalanche photodiodes (APDs) are integrated with the FD-TIA to achieve circuit symmetry. Also, an extra APD is added to facilitate the APC operations in Tx, i.e., concurrently adjusting the bias current of the VCSEL diode by the action of the newly proposed APC path in Rx. Measured results of test chips demonstrate that the proposed OTRx causes the DC bias current to increase from 0.93 mA to 1.42 mA as the input current decreases from 250 µApp to 3 µApp, highlighting its suitability for short-range sensor applications utilizing a cost-effective CMOS process. Full article
(This article belongs to the Special Issue Optoelectronic Functional Devices for Sensing Applications)
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12 pages, 5099 KiB  
Article
Application of Single-Frequency Arbitrarily Directed Split Beam Metasurface Reflector in Refractive Index Measurements
by Brian M. Wells, Joseph F. Tripp, Nicholas W. Krupa, Andrew J. Rittenberg and Richard J. Williams
Sensors 2024, 24(20), 6519; https://doi.org/10.3390/s24206519 - 10 Oct 2024
Viewed by 1363
Abstract
We present a sensor that utilizes a modified single-frequency split beam metasurface reflector to measure the refractive index of materials ranging from one to three. Samples are placed into a cavity between a PCB-etched dielectric and a reflecting ground plane. It is illuminated [...] Read more.
We present a sensor that utilizes a modified single-frequency split beam metasurface reflector to measure the refractive index of materials ranging from one to three. Samples are placed into a cavity between a PCB-etched dielectric and a reflecting ground plane. It is illuminated using a 10.525 GHz free-space transmit horn with reflecting angles measured by sweeping a receiving horn around the setup. Predetermined changes in measured angles determined through simulations will coincide with the material’s index. The sensor is designed using the Fourier transform method of array synthesis and verified with FEM simulations. The device is fabricated using PCB milling and 3D printing. The quality of the sensor is verified by characterizing 3D printed dielectric samples of various infill percentages and thicknesses. Without changing the metasurface design, the sensing performance is extended to accommodate larger sample thicknesses by including a modified 3D printed fish-eye lens mounted in front of the beam splitter; this helps to exaggerate changes in reflected angles for those samples. All the methods presented are in agreement and verified with single-frequency index measurements using Snell’s law. This device may offer a viable alternative to traditional index characterization methods, which often require large sample sizes for single-frequency measurements or expensive equipment for multi-frequency parameter extraction. Full article
(This article belongs to the Special Issue Optoelectronic Functional Devices for Sensing Applications)
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20 pages, 5507 KiB  
Article
Robust Pixel Design Methodologies for a Vertical Avalanche Photodiode (VAPD)-Based CMOS Image Sensor
by Akito Inoue, Naoki Torazawa, Shota Yamada, Yuki Sugiura, Motonori Ishii, Yusuke Sakata, Taiki Kunikyo, Masaki Tamaru, Shigetaka Kasuga, Yusuke Yuasa, Hiromu Kitajima, Hiroshi Koshida, Tatsuya Kabe, Manabu Usuda, Masato Takemoto, Yugo Nose, Toru Okino, Takashi Shirono, Kentaro Nakanishi, Yutaka Hirose, Shinzo Koyama, Mitsuyoshi Mori, Masayuki Sawada, Akihiro Odagawa and Tsuyoshi Tanakaadd Show full author list remove Hide full author list
Sensors 2024, 24(16), 5414; https://doi.org/10.3390/s24165414 - 21 Aug 2024
Viewed by 1281
Abstract
We present robust pixel design methodologies for a vertical avalanche photodiode-based CMOS image sensor, taking account of three critical practical factors: (i) “guard-ring-free” pixel isolation layout, (ii) device characteristics “insensitive” to applied voltage and temperature, and (iii) stable operation subject to intense light [...] Read more.
We present robust pixel design methodologies for a vertical avalanche photodiode-based CMOS image sensor, taking account of three critical practical factors: (i) “guard-ring-free” pixel isolation layout, (ii) device characteristics “insensitive” to applied voltage and temperature, and (iii) stable operation subject to intense light exposure. The “guard-ring-free” pixel design is established by resolving the tradeoff relationship between electric field concentration and pixel isolation. The effectiveness of the optimization strategy is validated both by simulation and experiment. To realize insensitivity to voltage and temperature variations, a global feedback resistor is shown to effectively suppress variations in device characteristics such as photon detection efficiency and dark count rate. An in-pixel overflow transistor is also introduced to enhance the resistance to strong illumination. The robustness of the fabricated VAPD-CIS is verified by characterization of 122 different chips and through a high-temperature and intense-light-illumination operation test with 5 chips, conducted at 125 °C for 1000 h subject to 940 nm light exposure equivalent to 10 kLux. Full article
(This article belongs to the Special Issue Optoelectronic Functional Devices for Sensing Applications)
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