Deposition Process, Characterization and Performance of Thin Films

A special issue of Processes (ISSN 2227-9717). This special issue belongs to the section "Chemical Processes and Systems".

Deadline for manuscript submissions: closed (30 November 2024) | Viewed by 1326

Special Issue Editor


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Guest Editor
International Joint Research Center for Photoresponsive Molecules and Materials, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
Interests: atomic layer deposition; nano-thin film; inorganic; film characterization; catalytic properties of thin film materials

Special Issue Information

Dear Colleagues,

Over the last few decades, the study of thin films has driven many advances in various sectors, such as energy, information, agriculture, health, and environmental. Thin films can be prepared through many methods including spraying, wet chemical and electrochemical processes, and physical and chemical vapour deposition techniques; their performances are closely associated with the selected deposition method and growth process. The field of thin films has been defined as the confluence of materials science, surface science, and applied physics.

This Special Issue on “Deposition Process, Characterization and Performance of Thin Films” seeks high-quality submissions focusing on thin film synthesis, processes, characterization, and performanc. Topics include, but are not limited to, the following:

  • Thin film materials (metallic, inorganic, organic, and composite) and their application performance;
  • Thin film deposition methods and growth processes;
  • Precursors and their application in thin film deposition.

Dr. Liyong Du
Guest Editor

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Keywords

  • thin film
  • material
  • deposition
  • process
  • performace
  • percursor

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Published Papers (1 paper)

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Research

11 pages, 2954 KiB  
Article
Electron-Beam-Evaporated Nickel Oxide Thin Films for Application as a Hole Transport Layer in Photovoltaics
by Mohammad Istiaque Hossain and Brahim Aissa
Processes 2024, 12(12), 2809; https://doi.org/10.3390/pr12122809 - 8 Dec 2024
Viewed by 993
Abstract
We present the growth of nickel oxide (NiO) thin films as a hole transport material in photovoltaic devices using the e-beam evaporation technique. The metal oxide layers were reactively deposited at a substrate temperature of 200 °C using an electron beam evaporator under [...] Read more.
We present the growth of nickel oxide (NiO) thin films as a hole transport material in photovoltaic devices using the e-beam evaporation technique. The metal oxide layers were reactively deposited at a substrate temperature of 200 °C using an electron beam evaporator under an oxygen atmosphere. The oxide films reactively grown through electron-beam evaporation were optimized for carrier transport layers. Optical and structural characterizations were performed using ultraviolet–visible (UV–Vis) spectrometry, X-ray diffraction, contact angle measurements, scanning electron microscopy, and Hall effect measurements. The study of these films confirmed that the NiO layer is a suitable candidate for use as a hole transport layer based on Hall effect measurements. A morphological study using field-emission scanning electron microscopy confirmed the growth of compact, uniform, and defect-free metal oxide layers. Contact angle measurements revealed that the films possessed semi-hydrophilic properties, contributing to improved stability by repelling water from their surfaces. The stoichiometry of the films was influenced by the oxygen pressure during deposition, which affected both their morphological and optical features. The NiO films exhibited a transmittance exceeding 80% in the visible spectrum. These findings highlight the potential applications of such nickel oxide films as hole transport material layers. Full article
(This article belongs to the Special Issue Deposition Process, Characterization and Performance of Thin Films)
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