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Photonics
Special Issues
Frontiers of Mid-IR Optical and Optoelectronic Devices
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Frontiers of Mid-IR Optical and Optoelectronic Devices

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Lasers, Light Sources and Sensors".

Deadline for manuscript submissions: closed (28 February 2023) | Viewed by 3695

Special Issue Editors

Dr. Yu Yao

E-Mail Website
Guest Editor
ECEE, Arizona State University, Tempe, AZ 85281, USA
Interests: semiconductor nanostructures; two-dimensional materials; nanophotonic structures and their applications in advanced optoelectronics and reconfigurable optical devices; mid-infrared technology and its application for infrared sensing and medical and imaging applications
Dr. Alex Y. Song

E-Mail Website
Guest Editor
School of Electrical and Information Engineering, University of Sydney, Camperdown, Sydney, NSW 2006, Australia
Interests: nanophotonics; topological materials; renewable energy; mid-IR quantum-cascade light sources and detectors

Special Issue Information

Dear Colleagues,

The mid-infrared (mid-IR) portion of the electromagnetic spectrum (usually defined as wavelengths beyond 2 µm up to 50 µm) hosts the rotational and vibrational absorption features for a wide range of molecules and materials and covers two major atmospheric windows. It is of great interest for various applications in spectroscopy, material characterization, food safety, thermal imaging, and remote sensing applications, etc. However, to date, commercially available mid-IR optic and optoelectronic devices still fall far behind their counterparts in the visible and near-IR wavelengths, posing fundamental limitations for the development of indispensable tools for various applications. In recent years, there have been significant new developments in mid-IR sources, modulators, detectors, and integrated mid-IR photonics that have been driven by continuous innovations and advances in many established techniques as well as the emergence of new technologies and materials.

This Special Issue will focus on state-of-the-art research in mid-IR optic and optoelectronic devices. In this special Issue, original research articles, letters, and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Mid-infrared lasers and sources;
  • Mid-infrared modulators, spatial light modulators, beam-shaping, and beam-steering devices;
  • Mid-infrared photodetectors and focal plane arrays;
  • Other mid-infrared optic and optoelectronic devices;
  • Chip-integrated mid-infrared devices and systems;
  • Mid-infrared metasurface and metamaterial devices;
  • Mid-infrared materials (semiconductors, crystals, 2D materials, etc.) for device applications.

Dr. Yu Yao
Dr. Alex Y. Song
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • mid-infrared optic and optoelectronic devices
  • mid-infrared lasers and sources
  • mid-infrared modulators and spatial light modulators
  • mid-infrared photodetectors and focal plane arrays
  • chip-integrated mid-infrared devices and systems
  • mid-infrared metasurface and metamaterial devices
  • mid-infrared semiconductor devices
  • mid-infrared crystals
  • emerging optical materials for mid-IR wavelengths

Published Papers (2 papers)

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Research

9 pages, 6213 KiB  
Communication
Silicon Waveguide Sensors for Carbon Dioxide Gas Sensing in the Mid-Infrared Region
by Yuxia Song, Baoshuai Li, Huiyuan Zhang, Mingyu Li, Qiushun Li and Jian-Jun He
Photonics 2023, 10(2), 120; https://doi.org/10.3390/photonics10020120 - 24 Jan 2023
Cited by 4 | Viewed by 1903
Abstract
Two optical waveguide sensors based on SOS (silicon-on-sapphire) for detecting CO2 are theoretically proposed. The operational wavelength is 4.23 μm, which is the maximum absorption line of CO2. The power confinement factor (η) value is over 40% and 50%, the [...] Read more.
Two optical waveguide sensors based on SOS (silicon-on-sapphire) for detecting CO2 are theoretically proposed. The operational wavelength is 4.23 μm, which is the maximum absorption line of CO2. The power confinement factor (η) value is over 40% and 50%, the propagation loss is 0.98 dB/cm and 2.99 dB/cm, respectively, in the slot waveguide and SWGS (subwavelength grating slot) waveguide. An inverted tapered structure is used for the transition from strip waveguide to slot waveguide and constitutes the sensing absorption region, with the coupling efficiency that can reach more than 90%. When the optimal absorption length of the slot waveguide and SWGS waveguide is 1.02 cm and 0.33 cm, respectively, the maximum sensitivity can reach 6.66 × 10−5 (ppm−1) and 2.60 × 10−5 (ppm−1). Furthermore, taking the slot waveguide as an example, spiral and meander structures enable the long-distance sensing path to integrate into a small area. Full article
(This article belongs to the Special Issue Frontiers of Mid-IR Optical and Optoelectronic Devices)
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7 pages, 1802 KiB  
Communication
Coupling Performance Enhancement of GaSb-Based Single-Transverse-Mode Lasers with Reduced Beam Divergence Obtained via near Field Modulation
by Tianfang Wang, Chengao Yang, Yihang Chen, Hongguang Yu, Jianmei Shi, Xiangbin Su, Yu Zhang, Yingqiang Xu, Haiqiao Ni and Zhichuan Niu
Photonics 2022, 9(12), 942; https://doi.org/10.3390/photonics9120942 - 6 Dec 2022
Viewed by 1044
Abstract
Symmetric narrow waveguide structure has been developed and fabricated to achieve low beam divergence and improved coupling performance of the 1.95 μm GaSb-based single-transverse-mode diode lasers. The near-field expansion effect of the narrowed 150 nm vertical waveguide design leads to a reduced fast-axis [...] Read more.
Symmetric narrow waveguide structure has been developed and fabricated to achieve low beam divergence and improved coupling performance of the 1.95 μm GaSb-based single-transverse-mode diode lasers. The near-field expansion effect of the narrowed 150 nm vertical waveguide design leads to a reduced fast-axis beam divergence of 44.2° full width at half maximum (FWHM) as well as 62% single-mode fiber (SMF) coupling efficiency, which has 55% relative promotion compared to the 40% efficiency of the conventional 270 nm waveguide design with 60.4° FWHM. The highest SMF coupling power of 113 mW was obtained by the 210 nm narrow waveguide lasers with lower internal optical loss at a 55% coupling efficiency, which performed balanced optimal performance with a narrowed divergence of 53.4° and a relatively high optical power of 206 mW. The high coupling efficiency and power will provide more promising prospects for the GaSb-based single-transverse-mode lasers in the widespread fiber-based and external-cavity applications. Full article
(This article belongs to the Special Issue Frontiers of Mid-IR Optical and Optoelectronic Devices)
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