Deep Ultraviolet Detection Materials and Devices
A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".
Deadline for manuscript submissions: 30 September 2025 | Viewed by 93
Special Issue Editors
Interests: III-V semiconductor; deep ultraviolet LED; boron nitride materials and devices; UV detector
Special Issues, Collections and Topics in MDPI journals
Interests: silicon carbide power devices; gallium nitride epitaxial growth; diamond devices; gallium oxide materials and devices
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
The application of ultraviolet short-range secure communication, shipborne guidance, ozone layer monitoring, and water pollution treatment require the continuous development, transformation, and utilization of deep ultraviolet (DUV) detection technology. Therefore, the research and development of DUV detection technology have attracted the extensive attention of researchers.
Wide-bandgap semiconductor materials possess unique electrical, optical, and magnetic properties. Their devices offer excellent performance and application prospects in many fields, and could thus enhance the working temperature limit of power devices and enable them to operate in poor environments; improve the power and efficiency of devices and the performance of equipment; and broaden the luminous spectrum and realize full-color displays. With the gradual maturation of material growth and device preparation technology, wide-band semiconductor materials and devices are widely employed in the electronic information industry. Compared with narrow-bandgap materials, the optical response wavelength of detectors that comprise new ultrawide-bandgap (UWBG) semiconductor materials is naturally located in the deep ultraviolet band. These UWBG semiconductors possess good thermal conductivity, high sensitivity, and strong chemical stability. At present, the inorganic materials utilized in DUV detection mainly include III-nitride semiconductors (GaN, AlN, BN, etc.), SiC , diamond, Ga2O3 and other materials.
This Special Issue focuses on the research of DUV detection materials and devices, so that researchers in this field can promote the development of wide-bandgap semiconductor materials and devices.
In this Special Issue, original research articles and reviews are welcome. The scope of this Special Issue includes, but is not limited to, the following topics:
- III-V semiconductors (GaN, etc.)
- SiC materials and devices
- AlN crystals and templates
- BN growth and fundamental properties
- Heterostructure physics
- First-principles calculation
- Deep UV photodetectors
- Diamonds materials and devices
- Gallium oxide materials and devices.
Dr. Qiang Li
Prof. Dr. Mingsheng Xu
Dr. Weizong Xu
Guest Editors
Manuscript Submission Information
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Keywords
- III-V semiconductors (GaN, etc.)
- SiC materials and devices
- AlN crystals and templates
- BN growth and fundamental properties
- heterostructure physics
- first-principles calculation
- deep UV photodetectors
- diamonds materials and devices
- gallium oxide materials and devices
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