Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
7.4
5.3
Journals
Nanomaterials
Special Issues
Transport Properties of Nanowires
share announcement

Transport Properties of Nanowires

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 September 2021) | Viewed by 15623

Special Issue Editor

Dr. Matthias Elm

E-Mail Website
Guest Editor
Center for Materials Research, Justus Liebig University Giessen, Giessen, Germany
Interests: Mesoscopic transport; nanowires; nanoelectronics; nanoionics; surfaces and interfaces; ionic and electronic transport processes; mesoporous oxides; energy materials; batteries

Special Issue Information

Dear Colleagues,

In the last two decades, bottom–up methods have allowed us to realize one-dimensional nanowire structures with a high surface to volume ratio, whose size and composition can be reliably controlled during synthesis. In addition, their small cross-sectional area allows nanowires to accommodate much higher lattice mismatch compared to thin films, resulting in the possibility to grow nanostructures of high structural quality. Due to these reasons, nanowires represent promising building blocks for a wide range of nanoscaled device applications, not only in the field of electronics and optoelectronics, such as field-effect transistors, light-emitting diodes, or sensors, but also for electrochemical device applications for energy storage.

Furthermore, at low temperatures, nanowires can exhibit quantum interference effects, such as universal conductance fluctuations, whose analysis allows the determination of fundamental transport parameters such as phase coherence length. Thus, in addition to their technological importance, nanowires represent ideal systems to study mesoscopic transport in structures of reduced dimensions.

In this context, this Special Issue on “Transport in Nanowires” attempts to cover all aspects regarding recent progresses and results in the characterization of transport processes in nanowires structures. Thus, the issue not only includes recent advances in the preparation and characterization of nanowire-based devices for technological applications but also focusses on recent progress in understanding the mesoscopic transport properties in nanowires and nanowire heterostructures.

Dr. Matthias Elm
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • quantum interference effects
  • mesoscopic transport
  • nanowires
  • nanowire devices
  • electronic transport
  • nanowire electronics and optoelectronics
  • nanowire batteries

Published Papers (5 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Review

10 pages, 1950 KiB  
Article
Tuning the Anisotropic Thermal Transport in {110}-Silicon Membranes with Surface Resonances
by Keqiang Li, Yajuan Cheng, Maofeng Dou, Wang Zeng, Sebastian Volz and Shiyun Xiong
Nanomaterials 2022, 12(1), 123; https://doi.org/10.3390/nano12010123 - 30 Dec 2021
Cited by 5 | Viewed by 1384
Abstract
Understanding the thermal transport in nanostructures has important applications in fields such as thermoelectric energy conversion, novel computing and heat dissipation. Using non-homogeneous equilibrium molecular dynamic simulations, we studied the thermal transport in pristine and resonant Si membranes bounded with {110} facets. The [...] Read more.
Understanding the thermal transport in nanostructures has important applications in fields such as thermoelectric energy conversion, novel computing and heat dissipation. Using non-homogeneous equilibrium molecular dynamic simulations, we studied the thermal transport in pristine and resonant Si membranes bounded with {110} facets. The break of symmetry by surfaces led to the anisotropic thermal transport with the thermal conductivity along the [110]-direction to be 1.78 times larger than that along the [100]-direction in the pristine structure. In the pristine membranes, the mean free path of phonons along both the [100]- and [110]-directions could reach up to ∼100 µm. Such modes with ultra-long MFP could be effectively hindered by surface resonant pillars. As a result, the thermal conductivity was significantly reduced in resonant structures, with 87.0% and 80.8% reductions along the [110]- and [100]-directions, respectively. The thermal transport anisotropy was also reduced, with the ratio κ110/κ100 decreasing to 1.23. For both the pristine and resonant membranes, the thermal transport was mainly conducted by the in-plane modes. The current work could provide further insights in understanding the thermal transport in thin membranes and resonant structures. Full article
(This article belongs to the Special Issue Transport Properties of Nanowires)
►▼ Show Figures

Figure 1

7 pages, 1430 KiB  
Communication
Size-Dependent Electrical Transport Properties in Conducting Diamond Nanostripes
by Andrew F. Zhou, Elluz Pacheco, Badi Zhou and Peter X. Feng
Nanomaterials 2021, 11(7), 1765; https://doi.org/10.3390/nano11071765 - 06 Jul 2021
Cited by 4 | Viewed by 1555
Abstract
With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and [...] Read more.
With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and electrochemical applications. In this paper, 100 nm thick n-type ultrananocrystalline diamond thin films were synthesized by microwave plasma-enhanced chemical vapor deposition method with 5% N2 gas in the plasma during the growth process. Then the nanostripes were fabricated using standard electron beam lithography and reactive ion etching techniques. The electrical transport properties of the free-standing single nanostripes of different widths from 75 to 150 nm and lengths from 1 to 128 μm were investigated. The study showed that the electrical resistivity of the n-type ultrananocrystalline diamond nanostripes increased dramatically with the decrease in the nanostripe width. The nanostripe resistivity was nearly doubted when the width was reduced from 150 nm to 75 nm. The size-dependent variability in conductivity could originate from the imposed diffusive scattering of the nanostripe surfaces which had a further compounding effect to reinforce the grain boundary scattering. Full article
(This article belongs to the Special Issue Transport Properties of Nanowires)
►▼ Show Figures

Figure 1

12 pages, 3570 KiB  
Article
Scalable Solution-Processed Fabrication Approach for High-Performance Silver Nanowire/MXene Hybrid Transparent Conductive Films
by Pengchang Wang, Chi Zhang, Majiaqi Wu, Jianhua Zhang, Xiao Ling and Lianqiao Yang
Nanomaterials 2021, 11(6), 1360; https://doi.org/10.3390/nano11061360 - 21 May 2021
Cited by 23 | Viewed by 3654
Abstract
The transparent conductive films (TCFs) based on silver nanowires are expected to be a next-generation electrode for flexible electronics. However, their defects such as easy oxidation and high junction resistance limit its wide application in practical situations. Herein, a method of coating Ti [...] Read more.
The transparent conductive films (TCFs) based on silver nanowires are expected to be a next-generation electrode for flexible electronics. However, their defects such as easy oxidation and high junction resistance limit its wide application in practical situations. Herein, a method of coating Ti3C2Tx with different sizes was proposed to prepare silver nanowire/MXene composite films. The solution-processed silver nanowire (AgNW) networks were patched and welded by capillary force effect through the double-coatings of small and large MXene nanosheets. The sheet resistance of the optimized AgNW/MXene TCFs was 15.1 Ω/sq, the optical transmittance at 550 nm was 89.3%, and the figure of merit value was 214.4. Moreover, the AgNW/MXene TCF showed higher stability at 1600 mechanical bending, annealing at 100 °C for 50 h, and exposure to ambient air for 40 days. These results indicate that the novel AgNW/MXene TCFs have a great potential for high-performance flexible optoelectronic devices. Full article
(This article belongs to the Special Issue Transport Properties of Nanowires)
►▼ Show Figures

Figure 1

11 pages, 2097 KiB  
Article
Thermoelectric Characteristics of A Single-Crystalline Topological Insulator Bi2Se3 Nanowire
by Dedi, Ping-Chung Lee, Pai-Chun Wei and Yang-Yuan Chen
Nanomaterials 2021, 11(3), 819; https://doi.org/10.3390/nano11030819 - 23 Mar 2021
Cited by 17 | Viewed by 3229
Abstract
The discovery of topological insulators (TIs) has motivated detailed studies on their physical properties, especially on their novel surface states via strong spin–orbit interactions. However, surface-state-related thermoelectric properties are rarely reported, likely because of the involvement of their bulk-dominating contribution. In this work, [...] Read more.
The discovery of topological insulators (TIs) has motivated detailed studies on their physical properties, especially on their novel surface states via strong spin–orbit interactions. However, surface-state-related thermoelectric properties are rarely reported, likely because of the involvement of their bulk-dominating contribution. In this work, we report thermoelectric studies on a TI bismuth selenide (Bi2Se3) nanowire (NW) that exhibit a larger surface/volume ratio. Uniform single-crystalline TI Bi2Se3 NWs were successfully synthesized using a stress-induced growth method. To achieve the study of the thermoelectric properties of a nanowire (NW), including electrical conductivity (σ), Seebeck coefficient (S), and thermal conductivity (κ), a special platform for simultaneously performing all measurements on a single wire was designed. The properties of σ, S, and κ of a 200 nm NW that was well precharacterized using transmission electron microscope (TEM) measurements were determined using the four-probe method, the two-probe EMF across ∇T measurement, and the 3ω technique, respectively. The integrated TE properties represented by the figure of merit ZT (S2σT/κ) were found to be in good agreement with a theoretical study of Bi2Se3 NW. Full article
(This article belongs to the Special Issue Transport Properties of Nanowires)
►▼ Show Figures

Figure 1

Review

Jump to: Research

28 pages, 7042 KiB  
Review
Bottom-Up Fabrication of DNA-Templated Electronic Nanomaterials and Their Characterization
by Chao Pang, Basu R. Aryal, Dulashani R. Ranasinghe, Tyler R. Westover, Asami E. F. Ehlert, John N. Harb, Robert C. Davis and Adam T. Woolley
Nanomaterials 2021, 11(7), 1655; https://doi.org/10.3390/nano11071655 - 23 Jun 2021
Cited by 14 | Viewed by 4993
Abstract
Bottom-up fabrication using DNA is a promising approach for the creation of nanoarchitectures. Accordingly, nanomaterials with specific electronic, photonic, or other functions are precisely and programmably positioned on DNA nanostructures from a disordered collection of smaller parts. These self-assembled structures offer significant potential [...] Read more.
Bottom-up fabrication using DNA is a promising approach for the creation of nanoarchitectures. Accordingly, nanomaterials with specific electronic, photonic, or other functions are precisely and programmably positioned on DNA nanostructures from a disordered collection of smaller parts. These self-assembled structures offer significant potential in many domains such as sensing, drug delivery, and electronic device manufacturing. This review describes recent progress in organizing nanoscale morphologies of metals, semiconductors, and carbon nanotubes using DNA templates. We describe common substrates, DNA templates, seeding, plating, nanomaterial placement, and methods for structural and electrical characterization. Finally, our outlook for DNA-enabled bottom-up nanofabrication of materials is presented. Full article
(This article belongs to the Special Issue Transport Properties of Nanowires)
►▼ Show Figures

Graphical abstract

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-5
Back to TopTop