Transport Properties of Nanowires

Dear Colleagues,

In the last two decades, bottom–up methods have allowed us to realize one-dimensional nanowire structures with a high surface to volume ratio, whose size and composition can be reliably controlled during synthesis. In addition, their small cross-sectional area allows nanowires to accommodate much higher lattice mismatch compared to thin films, resulting in the possibility to grow nanostructures of high structural quality. Due to these reasons, nanowires represent promising building blocks for a wide range of nanoscaled device applications, not only in the field of electronics and optoelectronics, such as field-effect transistors, light-emitting diodes, or sensors, but also for electrochemical device applications for energy storage.

Furthermore, at low temperatures, nanowires can exhibit quantum interference effects, such as universal conductance fluctuations, whose analysis allows the determination of fundamental transport parameters such as phase coherence length. Thus, in addition to their technological importance, nanowires represent ideal systems to study mesoscopic transport in structures of reduced dimensions.

In this context, this Special Issue on “Transport in Nanowires” attempts to cover all aspects regarding recent progresses and results in the characterization of transport processes in nanowires structures. Thus, the issue not only includes recent advances in the preparation and characterization of nanowire-based devices for technological applications but also focusses on recent progress in understanding the mesoscopic transport properties in nanowires and nanowire heterostructures.

Dr. Matthias Elm
Guest Editor

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