Two-Dimensional Semiconductor Nanostructure and Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (30 June 2024) | Viewed by 1605

Special Issue Editors

School of Advanced Materials and Nanotechnology & Key Laboratory on Wide-Gap Semiconductor Technology, Xidian University, Xi’an 710071, China
Interests: quantum materials; optoelectronics; two-dimensional materials; wide-bandgap semiconductors
Special Issues, Collections and Topics in MDPI journals
H. H. Wills Physics Laboratory, School of Physics, University of Bristol, Bristol BS8 1TL, UK
Interests: two-dimensional materials; wide-bandgap semiconductors; micro-&nano-scale thermal transport; high pressure & low-temperature physics; micro-Raman spectroscopy

Special Issue Information

Dear Colleagues,

We are thrilled to announce the launch of our innovative Special Issue entitled "Two-Dimensional Semiconductor Nanostructure and Nanomaterials". This edition is dedicated to exploring the convergence of artificial intelligence with the fast-evolving field of two-dimensional (2D) semiconductor nanostructures and nanomaterials.

Key highlights of this Special Issue:

  1. AI-Driven Material Discovery: Delve into the role of AI, including technologies like ChatGPT, in accelerating the discovery of new 2D materials, predicting their properties, and optimizing fabrication processes;
  2. 2D Semiconductors in Sensor Computing: Explore how 2D semiconductors are revolutionizing sensor technology, including the integration with AI algorithms, to enhance sensitivity, selectivity, and real-time data processing;
  3. Advanced Fabrication Techniques: Understand the impact of developing novel methods for synthesizing and manipulating 2D semiconductors;
  4. Applications in Nanotechnology and AI Synergy: Gain insights into the application of 2D semiconductor nanostructures in AI-driven domains, such as flexible electronics, solar cells, and quantum computing;
  5. Challenges and Future Prospects: Discuss the future scope and potential challenges of 2D semiconductor technology, including ethical considerations and AI interpretability in materials science.

This Special Issue aims to spotlight the transformative potential of 2D semiconductors and other nanomaterials. By compiling the latest research and developments, we aspire to offer a comprehensive overview of how 2D semiconductor science and technology can together drive innovation in various technological sectors.

We welcome submissions that highlight groundbreaking work at the intersection of 2D semiconductor and nanomaterials research. Your contributions will help build a deeper understanding of this synergy and inspire further advancements in this dynamic field.

For inquiries or submission details, please contact our editorial office.

Dr. Yong Xie
Dr. Yan Zhou
Guest Editors

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Published Papers (1 paper)

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Research

11 pages, 2739 KiB  
Article
Pressure-Promoted Triplet-Pair Separation in Singlet-Fission TIPS-Pentacene Nanofilms Revealed by Ultrafast Spectroscopy
by Lu Wang, Ruixue Zhu, Ruihua Pu, Weimin Liu, Yang Lu and Tsu-Chieu Weng
Nanomaterials 2024, 14(18), 1487; https://doi.org/10.3390/nano14181487 - 13 Sep 2024
Cited by 1 | Viewed by 1170
Abstract
Singlet fission (SF), as an effective way to break through the Shockley–Queisser limit, can dramatically improve energy conversion efficiency in solar cell areas. The formation, separation, and relaxation of triplet-pair excitons directly affect the triplet yield, especially triplet-pair separation; thus, how to enhance [...] Read more.
Singlet fission (SF), as an effective way to break through the Shockley–Queisser limit, can dramatically improve energy conversion efficiency in solar cell areas. The formation, separation, and relaxation of triplet-pair excitons directly affect the triplet yield, especially triplet-pair separation; thus, how to enhance the triplet-pair separation rate becomes one of the key points to improve SF efficiency; the decay mechanism where the singlet state is converted into two triplet states is significant for the study of the SF mechanism. Herein, we employ ultrafast transient absorption spectroscopy to study the singlet-fission process of nano-amorphous 6, 13-bis(triisopropylsilylethynyl)-Pentacene (TIPS-pentacene) films in a diamond anvil cell (DAC). A kinetics model related to the structural geometric details, as well as an evaluation of the pressure manipulation impacts, is demonstrated based on the experimental results. The results indicate that pressure manipulation enhanced the triplet-pair separation rates of SF-based materials according to their structural micro-environmental improvement when compressed in DAC, while the triplet-exciton transportation lifetime is prolonged. This work shows that pressure may effectively optimize the structural disorder of SF materials, which were found to improve triplet-pair separation efficiency and potentially offer an effective way to further improve SF efficiency. Full article
(This article belongs to the Special Issue Two-Dimensional Semiconductor Nanostructure and Nanomaterials)
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