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Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends—2nd Edition: Semiconductor Nanophotonics
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Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends—2nd Edition: Semiconductor Nanophotonics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (20 February 2025) | Viewed by 6851

Special Issue Editor

Prof. Dr. Hai-Zhi Song

E-Mail Website
Guest Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: optoelectronics; integrated photonics; nano-materials; quantum information; micro-/nano-processing
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The study of nano-optics and nano-optoelectronics currently represents one of the most active scientific and technological frontiers. By combining the achievements of photonics and nanotechnology to thoroughly realize novel optical, electronic, and optoelectronic functions, nano-optics and nano-optoelectronics have become indispensable in science and technology. After tremendous endeavors, nano-optics and nano-optoelectronics have already departed from their infancy and entered an exciting era, in whicch research ideas and theoretical concepts are being vigorously transferred into functional devices and real-life applications. Extensive research has already been conducted on nano-optics and nano-optoelectronics, and the achievements exhibit great application prospects in optical communication, optical interconnection, optical memory, sensing and imaging, metrology, display and lighting, medicine, security, green energy, etc. The research in this field is becoming increasingly widespread.

Seeking progress in addition to these developments, semiconductor nanophotonics, a vital domain within nano-optics and nano-optoelectronics, focuses on utilizing semiconductor materials to conduct research in photonics and optoelectronics. Breakthroughs such as nanoscale lasers, nano-optoelectronic detectors, and quantum nano-optics have been enabled through the design and modulation of semiconductor nanostructures' optical and electronic properties, providing boundless potential for the future of photonics and optoelectronics.

In order to review the present research achievements and to promote the future developments of nano-optics and nano-optoelectronics, Nanomaterials is publishing this Special Issue, entitled “Nano-Opticsand Nano-Optoelectronics: Challenges and Future Trends: 2nd Edition: Semiconductor Nanophotonics”. This publication will collect reviews, state-of-the-art research, articles reviewing the newest research progress, and discussions of fundamental physics and practical technology in the fields of nano-optics and nano-optoelectronics. Potential topics include, but are not limited to, nano-optics and photonics, silicon photonics, integrated photonics, nano-optoelectronics, optoelectronic integration, flat optics, photonic and plasmonic nanomaterials, metamaterials and metasurfaces, strong light–matter interactions at the nanoscale, nano-antennas, nano-waveguide chips, nano-optomechanics, nano-lasers, quantum nano-optics, nonlinear and ultrafast nano-optics, topological photonics, and non-reciprocal nano-optics.

Prof. Dr. Hai-Zhi Song
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nano-optics
  • integrated photonics
  • nano-optoelectronics
  • flat optics
  • nano-waveguide chips
  • optoelectronic integration
  • metamaterials and metasurfaces
  • quantum nano-optics
  • topological photonics
  • nano-optomechanics
  • semiconductor nanophotonics
  • semiconductor materials
  • optoelectronic devices
  • quantum dots
  • photonic technology

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Published Papers (3 papers)

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Research

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10 pages, 1509 KiB  
Article
The Frequency Response Characteristics of Ge-on-Si Photodetectors Under High Incident Power
by Jin Jiang, Hongmin Chen, Fenghe Yang, Chunlai Li, Jin He, Xiumei Wang and Jishi Cui
Nanomaterials 2025, 15(5), 398; https://doi.org/10.3390/nano15050398 - 5 Mar 2025
Viewed by 518
Abstract
This study explores the mechanisms responsible for the bandwidth reduction observed in germanium photodetectors under high signal light power. We investigate the impact of the carrier-shielding effect on the bandwidth through simulations, and we mitigate this effect by increasing the applied bias voltage. [...] Read more.
This study explores the mechanisms responsible for the bandwidth reduction observed in germanium photodetectors under high signal light power. We investigate the impact of the carrier-shielding effect on the bandwidth through simulations, and we mitigate this effect by increasing the applied bias voltage. The increase in the concentration of photogenerated carriers leads to a reduction in the carrier saturation drift velocity, which reduces the bandwidth of the germanium photodetector; this phenomenon is studied for the first time. The bandwidth is determined primarily by the carrier saturation drift velocity when the incident light power is below 2.5 mW. The decrease in bandwidth that is calculated based on the decrease in carrier saturation drift velocity is consistent with the experimental results. However, when the signal light power exceeds 3 mW, both the carrier-shielding effect and the reduction in the carrier saturation drift velocity contribute to the bandwidth reduction. This study provides good theoretical guidance for the design of high-power germanium photodetectors. Full article
(This article belongs to the Special Issue Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends—2nd Edition: Semiconductor Nanophotonics)
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Review

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16 pages, 2631 KiB  
Review
High-Speed Electro-Optic Modulators Based on Thin-Film Lithium Niobate
by Songyan Hou, Hao Hu, Zhihong Liu, Weichuan Xing, Jincheng Zhang and Yue Hao
Nanomaterials 2024, 14(10), 867; https://doi.org/10.3390/nano14100867 - 16 May 2024
Cited by 7 | Viewed by 5823
Abstract
Electro-optic modulators (EOMs) are pivotal in bridging electrical and optical domains, essential for diverse applications including optical communication, microwave signal processing, sensing, and quantum technologies. However, achieving the trifecta of high-density integration, cost-effectiveness, and superior performance remains challenging within established integrated photonics platforms. [...] Read more.
Electro-optic modulators (EOMs) are pivotal in bridging electrical and optical domains, essential for diverse applications including optical communication, microwave signal processing, sensing, and quantum technologies. However, achieving the trifecta of high-density integration, cost-effectiveness, and superior performance remains challenging within established integrated photonics platforms. Enter thin-film lithium niobate (LN), a recent standout with its inherent electro-optic (EO) efficiency, proven industrial performance, durability, and rapid fabrication advancements. This platform inherits material advantages from traditional bulk LN devices while offering a reduced footprint, wider bandwidths, and lower power requirements. Despite its recent introduction, commercial thin-film LN wafers already rival or surpass established alternatives like silicon and indium phosphide, benefitting from decades of research. In this review, we delve into the foundational principles and technical innovations driving state-of-the-art LN modulator demonstrations, exploring various methodologies, their strengths, and challenges. Furthermore, we outline pathways for further enhancing LN modulators and anticipate exciting prospects for larger-scale LN EO circuits beyond singular components. By elucidating the current landscape and future directions, we highlight the transformative potential of thin-film LN technology in advancing electro-optic modulation and integrated photonics. Full article
(This article belongs to the Special Issue Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends—2nd Edition: Semiconductor Nanophotonics)
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Other

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11 pages, 747 KiB  
Perspective
Will Quantum Topology Redesign Semiconductor Technology?
by Giuseppina Simone
Nanomaterials 2025, 15(9), 671; https://doi.org/10.3390/nano15090671 (registering DOI) - 28 Apr 2025
Viewed by 41
Abstract
Semiconductors underpin modern technology, enabling applications from power electronics and photovoltaics to communications and medical diagnostics. However, the industry faces pressing challenges, including shortages of critical raw materials and the unsustainable nature of conventional fabrication processes. Recent developments in quantum computing and topological [...] Read more.
Semiconductors underpin modern technology, enabling applications from power electronics and photovoltaics to communications and medical diagnostics. However, the industry faces pressing challenges, including shortages of critical raw materials and the unsustainable nature of conventional fabrication processes. Recent developments in quantum computing and topological quantum materials offer a transformative path forward. In particular, materials exhibiting non-Hermitian physics and topological protection, such as topological insulators and superconductors, enable robust, energy-efficient electronic states. These states are resilient to disorder and local perturbations, positioning them as ideal candidates for next-generation quantum devices. Non-Hermitian systems, which break traditional Hermitian constraints, have revealed phenomena like the skin effect, wherein eigenstates accumulate at boundaries, violating bulk-boundary correspondence. This effect has recently been observed in semiconductor-based quantum Hall devices, marking a significant milestone in condensed matter physics. By integrating these non-Hermitian topological principles into semiconductor technology, researchers can unlock new functionalities for fault-tolerant quantum computing, low-power electronics, and ultra-sensitive sensing platforms. This convergence of topology, quantum physics, and semiconductor engineering may redefine the future of electronic and photonic devices. Full article
(This article belongs to the Special Issue Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends—2nd Edition: Semiconductor Nanophotonics)
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