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Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends
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Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends

A topical collection in Nanomaterials (ISSN 2079-4991). This collection belongs to the section "Nanophotonics Materials and Devices".

Viewed by 11542

Editor

Prof. Dr. Hai-Zhi Song

E-Mail Website
Collection Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: optoelectronics; integrated photonics; nano-materials; quantum information; micro-/nano-processing
Special Issues, Collections and Topics in MDPI journals

Topical Collection Information

Dear Colleagues,

Combining the achievements of photonics and nano-technology to realize thoroughly novel optical, electronic, and optoelectronic functions, nano-optics and nano-optoelectronics currently represent one of the most active scientific and technological frontiers and have become indispensable. With significant advancements, nano-optics and nano-optoelectronics have already departed from their infancy and progressed into an innovative era, where research and theoretical concepts are being notably applied functional devices and real-life applications. A great volume of research on nano-optics and nano-optoelectronics has been conducted thus far, and its achievements suggest valuable application prospects in optical communication, optical interconnection, optical memory, sensing and imaging, metrology, display and lighting, medicine, security, green energy, etc. Studies in this field are becoming increasingly widespread.

In order to evaluate the current achievements and to promote the future developments of nano-optics and nano-optoelectronics, Nanomaterials is publishing this Topical Collection, “Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends”. It will present reviews and state-of-the-art progress in research, as well as fundamental physics and practical technology, in the fields of nano-optics and nano-optoelectronics. Topics include, but are not limited to, nano-optics and photonics, silicon photonics, integrated photonics, nano-optoelectronics, optoelectronic integration, flat optics, photonic and plasmonic nanomaterials, metamaterials and metasurfaces, strong light–matter interactions at the nanoscale, nano-antennas, nano-waveguide chips, nano-optomechanics, nano-lasers, nano-optoelectronic detectors, quantum nano-optics, nonlinear and ultrafast nano-optics, topological photonics, and non-reciprocal nano-optics.

We welcome your excellent papers, and we believe that your contributions will help to accelerate the advancement of nano-optics and nano-optoelectronics.

Prof. Dr. Hai-Zhi Song
Collection Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the collection website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nano-optics
  • integrated photonics
  • nano-optoelectronics
  • flat optics
  • nano-waveguide chips
  • optoelectronic integration
  • metamaterials and metasurfaces
  • quantum nano-optics
  • topological photonics
  • nano-optomechanics

Related Special Issues

Published Papers (10 papers)

Download All Papers

2026

Jump to: 2025

12 pages, 2362 KB  
Article
Theoretical Study of Polarization Holographic Encryption via a Nano-Structural Metasurface
by Yingying Tang, Bin Zhang, Zheqiang Zhong, Meihong Rao, Pengyu Zhu, Jiawei Guo, Liancong Gao, He Cai, Dongdong Wang, Hai-Zhi Song and You Wang
Nanomaterials 2026, 16(6), 351; https://doi.org/10.3390/nano16060351 - 12 Mar 2026
Viewed by 721
Abstract
Metasurface is a kind of artificial structure which can efficiently control the amplitude, phase, frequency, and polarization of the light field. Metasurface polarization holographic encryption is a holographic encryption technology with the polarization state as a key, which has been widely concerned in [...] Read more.
Metasurface is a kind of artificial structure which can efficiently control the amplitude, phase, frequency, and polarization of the light field. Metasurface polarization holographic encryption is a holographic encryption technology with the polarization state as a key, which has been widely concerned in recent years with advantages such as sub-wavelength pixels, precision adjustment, and high security factor. In this paper, the design and optimization of the unit structure of metasurface have been carried out, and the clear double-channel holographic image reproduction and good encryption effects have been realized afterwards. The results show that the relatively good polarization holographic encryption can be achieved by employing the designed Si nanorods with the length of 148 nm and width of 55 nm, respectively, which have been beforehand grown on SiO2 substrates. Note that the periodic angle deflection around the Z axis was adopted by using the dual-channel optical rotation incidence with the wavelength of 632.8 nm. It has been theoretically demonstrated that information transmittance loss should be less and the image restoration effect should be satisfactory. A novel encryption method has also been proposed for the optical information processing and optical encryption, and the huge application potential of our theme has been revealed as the next-generation optical control platform in the near future. Full article
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9 pages, 4946 KB  
Article
Characterizing Polarizers with Direct Electrical Readouts
by Longbo Jiao, Lili Xie, Qiuyi Long, Xinchen Li, Yizhi Wu, Weijia Shao and Qingjia Zhou
Nanomaterials 2026, 16(5), 301; https://doi.org/10.3390/nano16050301 - 27 Feb 2026
Viewed by 364
Abstract
The polarization of light is recognized as a key physical quantity in describing light-matter interactions. Polarizers are fabricated to selectively respond to light beams with different polarizations. In practice, the operations of a polarization measuring setup require bulky and expensive terminal photodetectors, e.g., [...] Read more.
The polarization of light is recognized as a key physical quantity in describing light-matter interactions. Polarizers are fabricated to selectively respond to light beams with different polarizations. In practice, the operations of a polarization measuring setup require bulky and expensive terminal photodetectors, e.g., a spectrophotometer, to measure the spectral responses associated with different polarizations. To get rid of the unfavorable reliance on conventional photodetectors, polarizers having a Cu-ZnO junction for efficient hot-electron extraction have been designed to give rise to direct electrical readouts. Detailed photoelectric studies reveal that the designed device excites guided-mode resonances with which the device exhibits polarization-dependent energy depositions in absorbable Cu, leading to distinct electrical responses between transverse electric and transverse magnetic polarizations. The electrical extinction ratio increases from 2.7 to 4.4 when the resonance wavelength increases from 767 nm to 869 nm. Full article
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41 pages, 2553 KB  
Review
Advances in Semiconductor Optical Amplifier Technologies for All-Optical Logic Gate Implementations: A Comprehensive Review
by Jiali Cui, Kyriakos E. Zoiros and Amer Kotb
Nanomaterials 2026, 16(3), 202; https://doi.org/10.3390/nano16030202 - 4 Feb 2026
Cited by 2 | Viewed by 1201
Abstract
Semiconductor optical amplifiers (SOAs) are central to the development of ultrafast, low-power all-optical signal processing systems. Their strong nonlinear response, compact size, and compatibility with photonic integration platforms make them key enablers for implementing all-optical logic functions beyond the limitations of electronic switching. [...] Read more.
Semiconductor optical amplifiers (SOAs) are central to the development of ultrafast, low-power all-optical signal processing systems. Their strong nonlinear response, compact size, and compatibility with photonic integration platforms make them key enablers for implementing all-optical logic functions beyond the limitations of electronic switching. This review offers a comprehensive analysis of the principal SOA technologies used in all-optical logic gate implementations, including conventional bulk and quantum well SOAs, quantum dot SOAs (QD-SOAs), photonic crystal SOAs (PhC-SOAs), reflective SOAs (RSOAs), and carrier reservoir SOAs (CR-SOAs). For each architecture, we examine the carrier dynamics, gain recovery mechanisms, saturation behavior, and fabrication considerations, together with their associated nonlinear effects such as cross-gain modulation, cross-phase modulation, and four-wave mixing. We further evaluate reported implementations of key logic operations—AND, NAND, OR, NOR, XOR, and XNOR—highlighting performance trade-offs in terms of speed, extinction ratio, operational power, integration complexity, and scalability. The review concludes with current challenges and emerging research directions aimed at realizing fully integrated, high-speed, and energy-efficient all-optical logic systems based on next-generation SOA technologies. Full article
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18 pages, 4291 KB  
Article
Simulation and Optimization of Ballistic-Transport-Induced Avalanche Effects in Two-Dimensional Materials
by Haipeng Wang, Wei Zhang, Han Wu, Tong Li, Beitong Cheng, Jieping Luo, Ruomei Jiang, Mengke Cai, Shuai Huang and Haizhi Song
Nanomaterials 2026, 16(3), 154; https://doi.org/10.3390/nano16030154 - 23 Jan 2026
Viewed by 604
Abstract
This study, for the first time, investigates and simulates ballistic-transport-induced avalanche behavior in two-dimensional materials. Using a technology computer-aided design simulation platform, a device model for ballistic avalanche transport is systematically established. By accurately calibrating the material parameters of two-dimensional materials and selecting [...] Read more.
This study, for the first time, investigates and simulates ballistic-transport-induced avalanche behavior in two-dimensional materials. Using a technology computer-aided design simulation platform, a device model for ballistic avalanche transport is systematically established. By accurately calibrating the material parameters of two-dimensional materials and selecting appropriate physical models, the key features of the ballistic avalanche effect are successfully reproduced, including low threshold voltage and high gain. The simulation results show good agreement with experimental data. Furthermore, mechanism-based analysis is performed to clarify the influence of critical design parameters on the avalanche threshold and multiplication gain. Finally, based on the same physical models and mechanistic understanding, the operational paradigm and performance of ballistic-transport avalanche photodetectors based on two-dimensional materials are predicted. This work provides a reliable theoretical foundation and a robust simulation framework for the optimized design of high-performance and low-power avalanche photon devices. Full article
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2025

Jump to: 2026

26 pages, 6322 KB  
Article
Silicon-on-Silica Microring Resonators for High-Quality, High-Contrast, High-Speed All-Optical Logic Gates
by Amer Kotb, Antonios Hatziefremidis and Kyriakos E. Zoiros
Nanomaterials 2025, 15(22), 1736; https://doi.org/10.3390/nano15221736 - 17 Nov 2025
Cited by 2 | Viewed by 1417
Abstract
With the increasing demand for ultrafast optical signal processing, silicon-on-silica (SoS) waveguides with ring resonators have emerged as a promising platform for integrated all-optical logic gates (AOLGs). In this work, we design and simulate a SoS-based waveguide structure, operating at the telecommunication wavelength [...] Read more.
With the increasing demand for ultrafast optical signal processing, silicon-on-silica (SoS) waveguides with ring resonators have emerged as a promising platform for integrated all-optical logic gates (AOLGs). In this work, we design and simulate a SoS-based waveguide structure, operating at the telecommunication wavelength of 1550 nm, consisting of a circular ring resonator coupled to straight bus waveguides using Lumerical FDTD solutions. The design achieves a high Q-factor of 11,071, indicating low optical loss and strong light confinement. The evanescent coupling between the ring and waveguides, along with optimized waveguide dimensions, enables efficient interference, realizing a complete suite of AOLGs (XOR, AND, OR, NOT, NOR, NAND, and XNOR). Numerical simulations demonstrate robust performance across all gates, with high contrast ratios between 11.40 dB and 13.72 dB and an ultra-compact footprint of 1.42 × 1.08 µm2. The results confirm the device’s capability to manipulate optical signals at data rates up to 55 Gb/s, highlighting its potential for scalable, high-speed, and energy-efficient optical computing. These findings provide a solid foundation for the future experimental implementation and integration of SoS-based photonic logic circuits in next-generation optical communication systems. Full article
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7 pages, 3245 KB  
Article
Tapered Cladding Design for Monolithic Waveguide–Photodetector Coupling in Si-Based Integrated Photonics
by Alfredo A. Gonzalez-Fernandez, Jorge A. Vazquez-Hernandez, Felix Aguilar-Valdez and Neil Moffat
Nanomaterials 2025, 15(22), 1731; https://doi.org/10.3390/nano15221731 - 17 Nov 2025
Viewed by 954
Abstract
Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si3N4) provides significant advantages due to its wide optical [...] Read more.
Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si3N4) provides significant advantages due to its wide optical transmission window. A key challenge, however, remains the monolithic integration of passive nitride-based photonic components with active electronic devices directly on silicon wafers. In this work, we propose and demonstrate a tapered bottom-cladding design that enables efficient coupling of visible light from Si3N4/SiO2 core–cladding waveguides into planar p–n junction photodiodes fabricated on the silicon surface. Si3N4/SiO2 waveguides were fabricated using fully CMOS-compatible processes and materials. Controlled reactive ion etching (RIE) of SiO2 allowed the formation of vertically tapered claddings, and finite-difference time-domain (FDTD) simulations were carried out to analyze coupling efficiency across wavelengths from 509 nm to 740 nm. Simulations showed transmission efficiencies above 90% for taper angles below 30°, with near-total coupling at 10°. Experimental fabrication achieved angles as low as 8°. Responsivity simulations yielded values up to 311 mA W−1 for photodiodes without internal gain. These results demonstrate the feasibility of fabricating monolithic Si-based waveguide–photodetector systems using simple, CMOS-compatible methods, opening a scalable path for integrated photonic–electronic devices operating in the visible range. Full article
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11 pages, 3383 KB  
Article
All-Optically Controlled Terahertz Modulation by Silicon-Grown CdSe/CdZnS Colloidal Quantum Wells
by Reyihanguli Tudi, Zhongxin Zhang, Xintian Song, AbulimitiYasen, Bumaliya Abulimiti and Mei Xiang
Nanomaterials 2025, 15(20), 1597; https://doi.org/10.3390/nano15201597 - 20 Oct 2025
Viewed by 841
Abstract
The CdSe/CdZnS colloidal quantum wells, with their exceptionally high carrier mobility and ultrafast response characteristics, emerge as highly promising candidate material for high-performance active terahertz modulators—indispensable core components critical for next-generation communication technologies. A high-performance, cost-effective terahertz modulator was fabricated through spin-coating CdSe(4ML)/CdZnS [...] Read more.
The CdSe/CdZnS colloidal quantum wells, with their exceptionally high carrier mobility and ultrafast response characteristics, emerge as highly promising candidate material for high-performance active terahertz modulators—indispensable core components critical for next-generation communication technologies. A high-performance, cost-effective terahertz modulator was fabricated through spin-coating CdSe(4ML)/CdZnS nanosheets onto a silicon substrate. This all-optical device demonstrates broadband modulation capabilities (0.25–1.4 THz), achieving a remarkable modulation depth of 87.6% at a low power density of 2 W/cm2. Demonstrating pump-power-efficient terahertz modulation characteristics, this core–shell composite shows immediate applicability in terahertz communication systems and non-destructive testing equipment. Full article
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11 pages, 1384 KB  
Article
Reverse Design of Three-Band Terahertz Metamaterial Sensor
by Hongyi Ge, Wenyue Cao, Shun Wang, Xiaodi Ji, Yuying Jiang, Xinxin Liu, Yitong Zhou, Yuan Zhang, Qingcheng Sun and Yuxin Wang
Nanomaterials 2025, 15(16), 1265; https://doi.org/10.3390/nano15161265 - 16 Aug 2025
Cited by 4 | Viewed by 1261
Abstract
Terahertz metamaterial devices (TMDs) have demonstrated promising applications in biomass detection, wireless communications, and security inspection. Nevertheless, conventional design methodologies for such devices suffer from extensive iterative optimizations and significant dependence on empirical expertise, substantially prolonging the development cycle. This study proposes a [...] Read more.
Terahertz metamaterial devices (TMDs) have demonstrated promising applications in biomass detection, wireless communications, and security inspection. Nevertheless, conventional design methodologies for such devices suffer from extensive iterative optimizations and significant dependence on empirical expertise, substantially prolonging the development cycle. This study proposes a reverse design framework leveraging a deep neural network (DNN) to enable rapid and efficient TMD synthesis, exemplified through a three-band terahertz metamaterial sensor. The developed DNN model achieves high-fidelity predictions (mean squared error = 0.03) and enables rapid inference for structural parameter generation. Experimental validation across four distinct target absorption spectra confirms high consistency between simulated and target responses, with near-identical triple-band resonance characteristics. Benchmarking against traditional CST-based optimization reveals a 36-fold acceleration in design throughput (200-device parameterization reduced from 36 h to 1 h). This work demonstrates a promising strategy for data-driven reverse design of multi-peak terahertz metamaterials, combining computational efficiency with rigorous electromagnetic performance. Full article
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12 pages, 7213 KB  
Article
Planar Wide-Angle Imaging System with a Single-Layer SiC Metalens
by Yiyang Liu, Qiangbo Zhang, Changwei Zhang, Mengguang Wang and Zhenrong Zheng
Nanomaterials 2025, 15(13), 1046; https://doi.org/10.3390/nano15131046 - 5 Jul 2025
Viewed by 1347
Abstract
Optical systems with wide field-of-view (FOV) imaging capabilities are crucial for applications ranging from biomedical diagnostics to remote sensing, yet conventional wide-angle optics face integration challenges in compact platforms. Here, we present the design and experimental demonstration of a single-layer silicon carbide (SiC) [...] Read more.
Optical systems with wide field-of-view (FOV) imaging capabilities are crucial for applications ranging from biomedical diagnostics to remote sensing, yet conventional wide-angle optics face integration challenges in compact platforms. Here, we present the design and experimental demonstration of a single-layer silicon carbide (SiC) metalens achieving a 90° total FOV, whose planar structure and small footprint address the challenges. This design is driven by a gradient-based numerical optimization strategy, Gradient-Optimized Phase Profile Shaping (GOPP), which optimizes the phase profile to accommodate the angle-dependent requirements. Combined with a front aperture, the GOPP-generated phase profile enables off-axis aberration control within a planar structure. Operating at 803 nm with a focal length of 1 mm (NA = 0.25), the fabricated metalens demonstrated focusing capabilities across the wide FOV, enabling effective wide-angle imaging. This work demonstrates the feasibility of using numerical optimization to realize single-layer metalens with challenging wide FOV capabilities, offering a promising route towards highly compact imagers for applications such as endoscopy and dermoscopy. Full article
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15 pages, 2189 KB  
Article
First-Principles Study of Halide Modulation on Deep-Level Traps in FAPbI3
by Jiaqi Dai, Wenchao Tang, Tingfeng Li, Cuiping Xu, Min Zhao, Peiqi Ji, Xiaolei Li, Fengming Zhang, Hongling Cai and Xiaoshan Wu
Nanomaterials 2025, 15(13), 981; https://doi.org/10.3390/nano15130981 - 24 Jun 2025
Cited by 5 | Viewed by 1722
Abstract
In this study, we investigate the influence of the halogen elements bromine (Br) and chlorine (Cl) on iodine defect properties primarily in FAPbI3 through first-principles calculations, aiming to understand the effect of high defect densities on the efficiency of organic–inorganic hybrid perovskite [...] Read more.
In this study, we investigate the influence of the halogen elements bromine (Br) and chlorine (Cl) on iodine defect properties primarily in FAPbI3 through first-principles calculations, aiming to understand the effect of high defect densities on the efficiency of organic–inorganic hybrid perovskite cells. The results indicate that Br and Cl interstitials minimally alter the overall band structure of FAPbI3 but significantly modify the defect energy levels. Br and Cl interstitials, with defect states closer to the valence band and lower formation energies, effectively convert deep-level traps induced by iodine interstitials (Ii) into shallow-level traps. This conversion enhances carrier transport by reducing non-radiative recombination while preserving light absorption efficiency. Excess Br/Cl co-doping in FAPbI3 synthesis thereby suppresses non-radiative recombination and mitigates the detrimental effects of iodide-related defects. Full article
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