Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends

A topical collection in Nanomaterials (ISSN 2079-4991). This collection belongs to the section "Nanophotonics Materials and Devices".

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Editor


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Collection Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: optoelectronics; integrated photonics; nano-materials; quantum information; micro-/nano-processing
Special Issues, Collections and Topics in MDPI journals

Topical Collection Information

Dear Colleagues,

Combining the achievements of photonics and nano-technology to realize thoroughly novel optical, electronic, and optoelectronic functions, nano-optics and nano-optoelectronics currently represent one of the most active scientific and technological frontiers and have become indispensable. With significant advancements, nano-optics and nano-optoelectronics have already departed from their infancy and progressed into an innovative era, where research and theoretical concepts are being notably applied functional devices and real-life applications. A great volume of research on nano-optics and nano-optoelectronics has been conducted thus far, and its achievements suggest valuable application prospects in optical communication, optical interconnection, optical memory, sensing and imaging, metrology, display and lighting, medicine, security, green energy, etc. Studies in this field are becoming increasingly widespread.

In order to evaluate the current achievements and to promote the future developments of nano-optics and nano-optoelectronics, Nanomaterials is publishing this Topical Collection, “Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends”. It will present reviews and state-of-the-art progress in research, as well as fundamental physics and practical technology, in the fields of nano-optics and nano-optoelectronics. Topics include, but are not limited to, nano-optics and photonics, silicon photonics, integrated photonics, nano-optoelectronics, optoelectronic integration, flat optics, photonic and plasmonic nanomaterials, metamaterials and metasurfaces, strong light–matter interactions at the nanoscale, nano-antennas, nano-waveguide chips, nano-optomechanics, nano-lasers, nano-optoelectronic detectors, quantum nano-optics, nonlinear and ultrafast nano-optics, topological photonics, and non-reciprocal nano-optics.

We welcome your excellent papers, and we believe that your contributions will help to accelerate the advancement of nano-optics and nano-optoelectronics.

Prof. Dr. Hai-Zhi Song
Collection Editor

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Keywords

  • nano-optics
  • integrated photonics
  • nano-optoelectronics
  • flat optics
  • nano-waveguide chips
  • optoelectronic integration
  • metamaterials and metasurfaces
  • quantum nano-optics
  • topological photonics
  • nano-optomechanics

Related Special Issues

Published Papers (2 papers)

2025

12 pages, 7213 KiB  
Article
Planar Wide-Angle Imaging System with a Single-Layer SiC Metalens
by Yiyang Liu, Qiangbo Zhang, Changwei Zhang, Mengguang Wang and Zhenrong Zheng
Nanomaterials 2025, 15(13), 1046; https://doi.org/10.3390/nano15131046 (registering DOI) - 5 Jul 2025
Abstract
Optical systems with wide field-of-view (FOV) imaging capabilities are crucial for applications ranging from biomedical diagnostics to remote sensing, yet conventional wide-angle optics face integration challenges in compact platforms. Here, we present the design and experimental demonstration of a single-layer silicon carbide (SiC) [...] Read more.
Optical systems with wide field-of-view (FOV) imaging capabilities are crucial for applications ranging from biomedical diagnostics to remote sensing, yet conventional wide-angle optics face integration challenges in compact platforms. Here, we present the design and experimental demonstration of a single-layer silicon carbide (SiC) metalens achieving a 90° total FOV, whose planar structure and small footprint address the challenges. This design is driven by a gradient-based numerical optimization strategy, Gradient-Optimized Phase Profile Shaping (GOPP), which optimizes the phase profile to accommodate the angle-dependent requirements. Combined with a front aperture, the GOPP-generated phase profile enables off-axis aberration control within a planar structure. Operating at 803 nm with a focal length of 1 mm (NA = 0.25), the fabricated metalens demonstrated focusing capabilities across the wide FOV, enabling effective wide-angle imaging. This work demonstrates the feasibility of using numerical optimization to realize single-layer metalens with challenging wide FOV capabilities, offering a promising route towards highly compact imagers for applications such as endoscopy and dermoscopy. Full article
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15 pages, 2189 KiB  
Article
First-Principles Study of Halide Modulation on Deep-Level Traps in FAPbI3
by Jiaqi Dai, Wenchao Tang, Tingfeng Li, Cuiping Xu, Min Zhao, Peiqi Ji, Xiaolei Li, Fengming Zhang, Hongling Cai and Xiaoshan Wu
Nanomaterials 2025, 15(13), 981; https://doi.org/10.3390/nano15130981 - 24 Jun 2025
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Abstract
In this study, we investigate the influence of the halogen elements bromine (Br) and chlorine (Cl) on iodine defect properties primarily in FAPbI3 through first-principles calculations, aiming to understand the effect of high defect densities on the efficiency of organic–inorganic hybrid perovskite [...] Read more.
In this study, we investigate the influence of the halogen elements bromine (Br) and chlorine (Cl) on iodine defect properties primarily in FAPbI3 through first-principles calculations, aiming to understand the effect of high defect densities on the efficiency of organic–inorganic hybrid perovskite cells. The results indicate that Br and Cl interstitials minimally alter the overall band structure of FAPbI3 but significantly modify the defect energy levels. Br and Cl interstitials, with defect states closer to the valence band and lower formation energies, effectively convert deep-level traps induced by iodine interstitials (Ii) into shallow-level traps. This conversion enhances carrier transport by reducing non-radiative recombination while preserving light absorption efficiency. Excess Br/Cl co-doping in FAPbI3 synthesis thereby suppresses non-radiative recombination and mitigates the detrimental effects of iodide-related defects. Full article
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Figure 1

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