Quantum Materials with Low-Dimensional Nanostructures: From Fundamentals to Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (10 December 2023) | Viewed by 3224

Special Issue Editor


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Guest Editor
School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
Interests: quantum materials; strong electronic correlation; charge density wave; nanoscale manipulation

Special Issue Information

Dear Colleagues,

Quantum materials, including superconductors, ferromagnets, topological insulators, Weyl semimetals, quantum spin liquids, Wigner crystals, etc., have long been sought after in condensed matter physics and nanotechnology communities. Electrons in these materials usually exhibit strong interactions, thus giving rise to intrinsic collective excitations known as quasiparticles. Especially with regard to the confinement of electrons into low-dimensional nanostructures, a rich variety of emerging quantum effects are found to be significant over a wide energy range and length scales, such as for Luttinger liquid, ferromagnetism, ferroelectricity, whispering-gallery mode, charge density wave, and so on. Moreover, these quantum effects are expected to provide important insights into designing low-dimensional electronics and optoelectronics. Therefore, searching for new quantum materials with low-dimensional nanostructures and unveiling quantum effects in these materials are of great significance.

The purpose of this present Special Issue is to elucidate the recent progress in the field of quantum materials with low-dimensional nanostructures, covering both fundamental research and practical applications. Scholars are welcome to submit a variety of types of articles, including research papers, communications, and reviews.

The potential topics of the present Special Issue include, but are not limited to:

  1. Fabrication of quantum materials with low-dimensional nanostructures;
  2. Novel properties (electronic, optical, thermal, catalytic…) of quantum materials;
  3. Controllable manipulation of quantum effects;
  4. Applications of quantum materials.

Dr. Yu Zhang
Guest Editor

Manuscript Submission Information

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Keywords

  • quantum materials
  • low-dimensional nanostructures
  • novel electronic properties
  • strong electronic correlation
  • manipulation
  • application

Published Papers (2 papers)

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Research

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15 pages, 10546 KiB  
Article
Caloric Effect Due to the Aharonov–Bohm Flux in an Antidot
by Patricia Martínez-Rojas, M. Esperanza Benavides-Vergara, Francisco J. Peña and Patricio Vargas
Nanomaterials 2023, 13(19), 2714; https://doi.org/10.3390/nano13192714 - 6 Oct 2023
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Abstract
In this work, we report the caloric effect for an electronic system of the antidot type, modeled by combining a repulsive and attractive potential (parabolic confinement). In this system, we consider the action of a perpendicular external magnetic field and the possibility of [...] Read more.
In this work, we report the caloric effect for an electronic system of the antidot type, modeled by combining a repulsive and attractive potential (parabolic confinement). In this system, we consider the action of a perpendicular external magnetic field and the possibility of having an Aharonov–Bohm flux (AB-flux) generated by a current passing through a solenoid placed inside the forbidden zone for the electron. The energy levels are obtained analytically, and the model is known as the Bogachek and Landman model. We propose to control the caloric response of the system by varying only the AB-flux, finding that, in the absence of an external magnetic field, the maximization of the effect always occurs at the same AB-flux intensity, independently of the temperature, while fixing the external magnetic field at a non-zero value breaks this symmetry and changes the point where the caloric phenomenon is maximized and is different depending on the temperature to which the process is carried. Our calculations indicate that using an effective electron mass of GaAs heterostructures and a trap intensity of the order of 2.896 meV, the modification of the AB-flux achieves a variation in temperature of the order of 1 K. Our analysis suggests that increasing the parabolic confinement twofold increases the effect threefold, while increasing the antidot size generates the reverse effect, i.e., a strong decrease in the caloric phenomenon under study. Due to the great diversity in technological applications that have antidots in electronics, the possibility of controlling their thermal response simply by varying the intensity of the internal current inside the solenoid (i.e., the intensity of AB-flux) can be a platform of interest for experimental studies. Full article
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Review

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18 pages, 4126 KiB  
Review
Progress in the Synthesis and Application of Tellurium Nanomaterials
by Hongliang Zhu, Li Fan, Kaili Wang, Hao Liu, Jiawei Zhang and Shancheng Yan
Nanomaterials 2023, 13(14), 2057; https://doi.org/10.3390/nano13142057 - 12 Jul 2023
Cited by 5 | Viewed by 2152
Abstract
In recent decades, low-dimensional nanodevices have shown great potential to extend Moore’s Law. The n-type semiconductors already have several candidate materials for semiconductors with high carrier transport and device performance, but the development of their p-type counterparts remains a challenge. As a p-type [...] Read more.
In recent decades, low-dimensional nanodevices have shown great potential to extend Moore’s Law. The n-type semiconductors already have several candidate materials for semiconductors with high carrier transport and device performance, but the development of their p-type counterparts remains a challenge. As a p-type narrow bandgap semiconductor, tellurium nanostructure has outstanding electrical properties, controllable bandgap, and good environmental stability. With the addition of methods for synthesizing various emerging tellurium nanostructures with controllable size, shape, and structure, tellurium nanomaterials show great application prospects in next-generation electronics and optoelectronic devices. For tellurium-based nanomaterials, scanning electron microscopy and transmission electron microscopy are the main characterization methods for their morphology. In this paper, the controllable synthesis methods of different tellurium nanostructures are reviewed, and the latest progress in the application of tellurium nanostructures is summarized. The applications of tellurium nanostructures in electronics and optoelectronics, including field-effect transistors, photodetectors, and sensors, are highlighted. Finally, the future challenges, opportunities, and development directions of tellurium nanomaterials are prospected. Full article
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