Advances in Nano-Optoelectronic Engineering: Materials, Devices, and Optical System Design

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (20 April 2025) | Viewed by 591

Special Issue Editor


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Guest Editor
Department of Electrical Engineering, National United University, Miaoli 36003, Taiwan
Interests: nano-structure; optics simulation; thin film solar cells; QLED

Special Issue Information

Dear Colleagues,

The fields of nano-optoelectronics and photonics are experiencing rapid advancements, particularly in the design and application of nanostructured materials and devices. These developments are crucial for enhancing the performance and efficiency of modern optical systems, from solid-state lighting to quantum dots-based technologies. Recent research has shown that novel nanomaterials, when integrated with advanced optical device designs, can significantly improve light manipulation, energy efficiency, and sensing capabilities.

This Special Issue will explore cutting-edge research in nano-optoelectronic engineering, focusing on a range of key topics, from solid-state lighting innovations to advancements in quantum dots and quantum physics applications. We aim to highlight both fundamental studies and practical developments in nano-photonics and bio-photonics, where the interaction between light and biological materials can lead to groundbreaking medical diagnostics and imaging systems. Additionally, the design of non-imaging and imaging optical systems plays a pivotal role in modern display technologies and optical instrumentation.

Furthermore, we will address the fabrication and design of optical devices, including photonic sensors and detectors, and delve into the use of nanomaterials in optical materials engineering. By bringing together research from both academic and industrial perspectives, this issue aims to push the boundaries of imaging systems and optical lens design, driving future innovations in optical technologies and display systems.

We invite contributions that address these diverse fields, helping to expand the knowledge base of optical engineering and to inspire new applications in photonic devices, sensors, and advanced materials.

Dr. Ming-Yi Lin
Guest Editor

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Keywords

  • solid-state lighting
  • nano-photonics and bio-photonics
  • quantum dots and quantum physics
  • non-imaging and imaging optical design
  • optical lens and instruments design
  • imaging systems, image processing, and display optical systems
  • optical devices, photonic devices, sensors, and detectors
  • nanomaterials and optical materials

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Published Papers (1 paper)

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Research

15 pages, 2229 KiB  
Article
Relative Intensity Noise of Gain-Switched Dual-State Lasing for an Insein(113)B Quantum Dot Laser
by Nuran Dogru, Erkan Cengiz and Hilal S. Duranoglu Tunc
Nanomaterials 2025, 15(7), 511; https://doi.org/10.3390/nano15070511 - 28 Mar 2025
Viewed by 326
Abstract
The RIN of an InAs/InP(113)B quantum-dot laser for direct- and cascade-relaxation models is investigated under the gain-switching condition via the application of an optical Gaussian pulse to an excited state. A new method is proposed to obtain RIN curves by eliminating the cross-correlation [...] Read more.
The RIN of an InAs/InP(113)B quantum-dot laser for direct- and cascade-relaxation models is investigated under the gain-switching condition via the application of an optical Gaussian pulse to an excited state. A new method is proposed to obtain RIN curves by eliminating the cross-correlation between noise sources. In this way, the noise sources are described independently and simulated with independent white Gaussian random variables. The results revealed that the RIN spectrum of both models was the same, apart from the fact that the cascade-relaxation model generated somewhat shorter pulses than the direct-relaxation model. Nevertheless, the direct-relaxation model had a lower RIN than that of the cascade-relaxation model. Excited- and ground-state carrier noises strongly affected the RIN spectrum, whereas the wetting-layer carrier noise had a negligible effect. In addition, the capture and escape times significantly affected the RIN spectrum. The output pulses had a long pulse width for both models due to the long pulse width of the ground-state photons. Nevertheless, applying an optical Gaussian pulse to an excited state reduced the RIN of both models and produced narrower gain-switched output pulses. Full article
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