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Nanomaterials
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Low-Dimensional Nanostructures: Synthesis, Characterization and Applications
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Low-Dimensional Nanostructures: Synthesis, Characterization and Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (8 February 2024) | Viewed by 5587

Special Issue Editor

Dr. Sang-Soo Chee

E-Mail Website
Guest Editor
Nanomaterials and Nanotechnology Center, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju-si 52851, Republic of Korea
Interests: 2D materials; van der Waals heterostructure; metal oxides; electronic devices; optoelectronic devices; solar cells; catalysts; sensors

Special Issue Information

Dear Colleagues, 

Over the past decade, low-dimensional materials have been successfully developed because of their unique electrical, physical and chemical properties and have been used for multifunctional electronic and optoelectronic applications. Subsequently, low-dimensional materials are rapidly gaining worldwide attention, aiming towards industrial-scale real-time device applications. Moreover, their extremely high surface area and existence of surface defects make them promising and compatible for various applications.

This Special Issue is focused on low-dimensional materials-based electronic and optoelectronic device applications (including optical, chemical, biological and electrical devices). Owing to the continuous progress in the synthesis and engineering of low-dimensional materials, a variety of novel functionalities can be achieved either by creating heterostructures with them or doping, which can offer an extra degree of tunability in electrical and optoelectrical devices. The Editorial Board of the journal Nanomaterials and myself are very pleased to announce this Special Issue and are looking forward to your contribution.

Dr. Sang-Soo Chee
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • low-dimensional materials
  • synthesis
  • sensors
  • transistors
  • catalysts
  • transparent electrodes
  • electronic devices
  • optoelectronic devices

Published Papers (4 papers)

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Research

13 pages, 4648 KiB  
Article
Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes
by Donghyeong Choi, Ji-Woo Seo, Jongwon Yoon, Seung Min Yu, Jung-Dae Kwon, Seoung-Ki Lee and Yonghun Kim
Nanomaterials 2023, 13(21), 2886; https://doi.org/10.3390/nano13212886 - 31 Oct 2023
Viewed by 1574
Abstract
A novel approach to fabricating a transparent and flexible one-transistor–one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. Leveraging transparent indium tin oxide (ITO) electrodes and amorphous indium gallium zinc oxide [...] Read more.
A novel approach to fabricating a transparent and flexible one-transistor–one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. Leveraging transparent indium tin oxide (ITO) electrodes and amorphous indium gallium zinc oxide (a-IGZO) channel-based thin-film transistor (TFT) backplanes, vertically stacked p-i-n hydrogenated amorphous silicon (a-Si:H) photodiodes (PDs) utilizing a low-temperature (<90 °C) deposition process are integrated with a densely packed 14 × 14 pixel array. The low-temperature-processed a-Si:H photodiodes show reasonable performance with responsivity and detectivity for 31.43 mA/W and 3.0 × 1010 Jones (biased at −1 V) at a wavelength of 470 nm, respectively. The good mechanical durability and robustness of the flexible image sensor arrays enable them to be attached to a curved surface with bending radii of 20, 15, 10, and 5 mm and 1000 bending cycles, respectively. These studies show the significant promise of utilizing highly flexible and rollable active-matrix technology for the purpose of dynamically sensing optical signals in spatial applications. Full article
(This article belongs to the Special Issue Low-Dimensional Nanostructures: Synthesis, Characterization and Applications)
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14 pages, 4446 KiB  
Article
Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures
by Ju-Ah Lee, Jongwon Yoon, Seungkwon Hwang, Hyunsang Hwang, Jung-Dae Kwon, Seung-Ki Lee and Yonghun Kim
Nanomaterials 2023, 13(21), 2870; https://doi.org/10.3390/nano13212870 - 30 Oct 2023
Viewed by 1484
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, [...] Read more.
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS2 transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS2 transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobility, on/off current ratio, and breakdown voltage of gate dielectric are dramatically enhanced by field-effect mobility (from 0.166 to 1.08 cm2/V·s), on/off current ratio (from 4.90 × 105 to 1.52 × 107), and breakdown voltage (from 15.73 to 27.48 V) compared with a local back-gate-based MoS2 transistor, respectively. Integrated logic circuits, including inverters, NAND, NOR, AND, and OR gates, were successfully fabricated by 2-inch wafer-scale through the integration of a buried-gate MoS2 transistor array. Full article
(This article belongs to the Special Issue Low-Dimensional Nanostructures: Synthesis, Characterization and Applications)
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13 pages, 4352 KiB  
Article
Convergence Gas Sensors with One-Dimensional Nanotubes and Pt Nanoparticles Based on Ultraviolet Photonic Energy for Room-Temperature NO2 Gas Sensing
by Sohyeon Kim, Ju-Eun Yang, Yoon-Seo Park, Minwoo Park, Sang-Jo Kim and Kyoung-Kook Kim
Nanomaterials 2023, 13(20), 2780; https://doi.org/10.3390/nano13202780 - 17 Oct 2023
Cited by 1 | Viewed by 1185
Abstract
Zinc oxide (ZnO) is a promising material for nitrogen dioxide (NO2) gas sensors because of its nontoxicity, low cost, and small size. We fabricated one-dimensional (1D) and zero-dimensional (0D) convergence gas sensors activated via ultraviolet (UV) photonic energy to sense NO [...] Read more.
Zinc oxide (ZnO) is a promising material for nitrogen dioxide (NO2) gas sensors because of its nontoxicity, low cost, and small size. We fabricated one-dimensional (1D) and zero-dimensional (0D) convergence gas sensors activated via ultraviolet (UV) photonic energy to sense NO2 gas at room temperature. One-dimensional ZnO nanorod (ZNR)-based and ZnO nanotube (ZNT)-based gas sensors were synthesized using a simple hydrothermal method. All the sensors were tested under UV irradiation (365 nm) so that they could be operated at room temperature rather than a high temperature. In addition, we decorated 0D Pt nanoparticles (NPs) on the gas sensors to further improve their sensing responsivity. The NO2-sensing response of the ZNT/Pt NP convergence gas sensor was 2.93 times higher than that of the ZNR gas sensor. We demonstrated the complex effects of UV radiation on 1D ZnO nanostructures and 0D metal nanostructures in NO2 gas sensing. Full article
(This article belongs to the Special Issue Low-Dimensional Nanostructures: Synthesis, Characterization and Applications)
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10 pages, 2340 KiB  
Article
Controlling the Morphology of Tellurene for a High-Performance H2S Chemiresistive Room-Temperature Gas Sensor
by Yeonjin Je and Sang-Soo Chee
Nanomaterials 2023, 13(19), 2707; https://doi.org/10.3390/nano13192707 - 5 Oct 2023
Viewed by 990
Abstract
A two-dimensional (2D) van der Waals material composed only of tellurium (Te) atoms—tellurene—is drawing attention because of its high intrinsic electrical conductivity and strong interaction with gas molecules, which could allow the development of high-performance chemiresistive sensors. However, the correlation between the morphologies [...] Read more.
A two-dimensional (2D) van der Waals material composed only of tellurium (Te) atoms—tellurene—is drawing attention because of its high intrinsic electrical conductivity and strong interaction with gas molecules, which could allow the development of high-performance chemiresistive sensors. However, the correlation between the morphologies and gas detection properties of tellurene has not yet been studied in depth, and few reports exist on tellurene-based hydrogen sulfide (H2S) chemiresistive sensors in spite of their strong interaction with H2S molecules. Here, we investigate the morphology-dependent H2S gas detection properties of tellurene synthesized using a hydrothermal method. To tailor the morphologies of tellurene, the molecular weight of the surfactant was controlled, revealing that a 1D or 2D form was synthesized and also accompanied with the high crystallinity. The 1D tellurene-based chemiresistive sensor presented superior H2S detection properties compared to the 2D form, achieving a gas response (Rg/Ra) of ~38, even at room temperature. This outstanding performance was attributed to the high intrinsic electrical conductivity and high specific surface area of the resultant 1D tellurene. Full article
(This article belongs to the Special Issue Low-Dimensional Nanostructures: Synthesis, Characterization and Applications)
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