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Nanomaterials
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Research of Conductive Nano-Scale Technology Tailored to Semiconductor Industry
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Research of Conductive Nano-Scale Technology Tailored to Semiconductor Industry

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (11 April 2025) | Viewed by 2291

Special Issue Editors

Dr. Yunlong He

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: physics of semiconductor devices; semiconductor material epitaxy; power switch module design
Dr. Jiaxing Wei

E-Mail Website
Guest Editor
National ASIC System Engineering Research Center, School of Integrated Circuits, Southeast University, Nanjing 210096, China
Interests: semiconductor power devices and integrated circuits
Prof. Dr. Xiaoli Lu

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: oxides; wide bandgap semiconductor materials and devices

Special Issue Information

Dear Colleagues,

We are looking for academic papers with unique and original opinions for the Special Issue on "Research of Conductive Nano-Scale Technology Tailored to Semiconductor Industry", which will be launched by the Journal of Nanomaterials (Q1, IF: 5.3). As an expert in the field, we warmly invite you to submit related papers to us. We not only publish papers, but also share papers worldwide to increase their downloads and citations.

Conductive nano-scale technology is an emerging field of technology that primarily studies conductive materials and systems at the nanoscale. The key to this technology lies in leveraging the characteristics of the nanoscale, such as surface science, organic chemistry, semiconductor physics, molecular biology, etc., to manufacture materials, devices, and systems with specific functions. The conductive nano-scale technology offers us a novel way to construct materials and products at the micro and macro levels with atomic precision. This Special Issue aims to gather and showcase cutting-edge research and advancements in the field of conductive nano-scale technology, with a particular focus on its applications and implications for the semiconductor industry. We believe that your expertise and insights would greatly enrich the content and discussions in this issue.

The submission deadline is 25 August 2024. Please reach out if you have any questions or require further information. We look forward to your engagement and potential collaboration on this exciting project.

Dr. Yunlong He
Dr. Jiaxing Wei
Prof. Dr. Xiaoli Lu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanoelectronics
  • flexible and stretchable electronics
  • microfabrication
  • semiconductor physics
  • nano-biosensing technology
  • materials science
  • nuclear radiation
  • semiconductor devices
  • power electronics
  • RF electronics
  • surface science

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Published Papers (2 papers)

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9 pages, 4639 KiB  
Article
Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp
by Feng Lin, Tuanzhuang Wu, Weidong Wang, Zhengxuan Wang, Yi Zhang, Sheng Li, Ran Ye, Long Zhang, Jiaxing Wei, Siyang Liu and Weifeng Sun
Nanomaterials 2025, 15(3), 172; https://doi.org/10.3390/nano15030172 - 23 Jan 2025
Viewed by 722
Abstract
An integrated quasi-vertical double-diffused MOSFET (DMOS) with split-gate trench (SGT) structure (SGT-QVDMOS), whose specific ON-state resistance (RON,sp) breaks the traditional Si limit significantly, is proposed and fabricated. The measured data of the latest manufactured device is presented. By introducing the vertical [...] Read more.
An integrated quasi-vertical double-diffused MOSFET (DMOS) with split-gate trench (SGT) structure (SGT-QVDMOS), whose specific ON-state resistance (RON,sp) breaks the traditional Si limit significantly, is proposed and fabricated. The measured data of the latest manufactured device is presented. By introducing the vertical gate poly, the split grounded source poly, and the asymmetric thick oxide in the gate trench, the traditional lateral drift region is folded in the SGT-QVDMOS. In this way, the device voltage withstanding mode transforms from one dimension to two dimensions, including the horizontal and the vertical directions. Combining the electric field modulation effect and the reduced lateral area, which benefit from the quasi-vertical structure, the forward conducting characteristic of the SGT-QVDMOS is effectively improved. According to the measured results from the SGT-QVDMOS manufactured by the 180 nm Bipolar-CMOS-DMOS (BCD) process, the ultralow ON-state resistance is obtained. The device achieves 1.9 V VTH, 11.07 mΩ∙mm2 RON,sp, and 48.6 V BV, which is 39.0% lower than the traditional Si limit. Full article
(This article belongs to the Special Issue Research of Conductive Nano-Scale Technology Tailored to Semiconductor Industry)
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10 pages, 3244 KiB  
Article
Study on Electrical and Temperature Characteristics of β-Ga2O3-Based Diodes Controlled by Varying Anode Work Function
by Yunlong He, Baisong Sheng, Xiaoli Lu, Guran Chen, Peng Liu, Ying Zhou, Xichen Wang, Weiwei Chen, Lei Wang, Jun Yang, Xuefeng Zheng, Xiaohua Ma and Yue Hao
Nanomaterials 2024, 14(24), 2035; https://doi.org/10.3390/nano14242035 - 18 Dec 2024
Viewed by 931
Abstract
This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-Ga2O3-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs) and P-N diodes (PNDs), utilizing Silvaco [...] Read more.
This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-Ga2O3-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs) and P-N diodes (PNDs), utilizing Silvaco TCAD simulation software, device fabrication and comparative analysis. From the perspective of transport characteristics, it is observed that the SBD exhibits a lower turn-on voltage and a higher current density. Notably, the Von of the Ti/Au anode SBD is merely 0.2 V, which is the lowest recorded value in the existing literature. The Von and current trend of two types of PNDs are nearly consistent, confirming that the contact between Ti/Au or Ni/Au and NiOx is ohmic. A theoretical derivation reveals the basic principles of the different contact resistances and current variations. With the combination of SBD and PND, the Von, current density, and variation rate of the JBSD lie between those of the SBD and PND. In terms of temperature characteristics, all diodes can work well at 200 °C, with both current density and Von showing a decreasing trend as the temperature increases. Among them, the PND with a Ni/Au anode exhibits the best thermal stability, with reductions in Von and current density of 8.20% and 25.31%, respectively, while the SBD with a Ti/Au anode shows the poorest performance, with reductions of 98.56% and 30.73%. Finally, the reverse breakdown (BV) characteristics of all six devices are tested. The average BV values for the PND with Ti/Au and Ni/Au anodes reach 1575 V and 1550 V, respectively. Moreover, although the Von of the JBSD decreases to 0.24 V, its average BV is approximately 220 V. This work could provide valuable insights for the future application of β-Ga2O3-based diodes in high-power and low-power consumption systems. Full article
(This article belongs to the Special Issue Research of Conductive Nano-Scale Technology Tailored to Semiconductor Industry)
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