Special Issue "Study of Structure Regulation and Physical Properties of Nano-Optoelectronic Materials"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 31 July 2023 | Viewed by 635

Special Issue Editors

Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Interests: new semiconductor optoelectronic materials and quantum devices: molecular beam epitaxial growth of GaAs and GaAs-based low-dimensional materials; quantum physical effects of restricted photoelectronic systems; preparation of high-performance optoelectronic devices and quantum devices
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Interests: preparation of low-dimensional semiconductor materials and optoelectronic functional devices; self-assembly of small organic molecules and molecular electronics devices; organic semiconductor materials and photoelectric devices

Special Issue Information

Dear Colleagues,

Nano-optoelectronic materials such as epitaxial 3D semiconductor quantum dots, 2D quantum wells/superlattices, and 2D monolayers are desired for information photonics (e.g., laser diode, photodetector, saturated absorber, micro-cavity or photonic integrated circuit) and quantum photonics (e.g., single or entangled photon emitter). To achieve suitable performances from these devices (e.g., high-speed lasers with low threshold, high working temperature and monolithic wavelength, photodetectors in high detectivity, definite biexciton–exciton photon-pair emission with small fine structure splitting, or efficient nonlinear optics on chip and fiber integrated instead of bulk material), a structure regulation of these nanomaterials is needed, e.g., adding modulated doping or tunneling barrier surrounding, controlling the nanomaterial size and orientation, using a strain-reducing layer or coupled layer for longer wavelength, using biaxial strain tuning to form light hole, controlling the flux sequence to form a sharp interface, or designing proper micro-resonator modes for nonlinear optics or integrated photonics. The structure optimization and its consequent improvement of device performance can be directly reflected in the characteristics (e.g., photoluminescence (PL) or micro-PL spectroscopy, photoresponse spectroscopy) of the material optical properties, such as transient optics, detectivity, or single exciton property in such structures.

The present Special Issue of Nanomaterials aims to present the current state of the art in the use of structure regulation and physical property characteristics of these nano-optoelectronic materials for optoelectronic devices. In this issue, we invite contributions from leading groups in the field with the aim of giving a balanced view of the current state of the art in this discipline.

Prof. Dr. Zhichuan Niu
Prof. Dr. Zhongming Wei
Guest Editors

Manuscript Submission Information

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Keywords

  • nano-optoelectronic materials
  • strain tuning
  • modulated doping
  • light hole
  • tunneling
  • interface
  • exciton
  • detectivity

Published Papers (1 paper)

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Research

Article
All-Silicon Photoelectric Biosensor on Chip Based on Silicon Nitride Waveguide with Low Loss
Nanomaterials 2023, 13(5), 914; https://doi.org/10.3390/nano13050914 - 01 Mar 2023
Viewed by 486
Abstract
Compared to the widely used compound semiconductor photoelectric sensors, all-silicon photoelectric sensors have the advantage of easy mass production because they are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. In this paper, we propose an all-silicon photoelectric biosensor with a simple process [...] Read more.
Compared to the widely used compound semiconductor photoelectric sensors, all-silicon photoelectric sensors have the advantage of easy mass production because they are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. In this paper, we propose an all-silicon photoelectric biosensor with a simple process and that is integrated, miniature, and with low loss. This biosensor is based on monolithic integration technology, and its light source is a PN junction cascaded polysilicon nanostructure. The detection device utilizes a simple refractive index sensing method. According to our simulation, when the refractive index of the detected material is more than 1.52, evanescent wave intensity decreases with the growth of the refractive index. Thus, refractive index sensing can be achieved. Moreover, it was also shown that, compared to a slab waveguide, the embedded waveguide designed in this paper has a lower loss. With these features, our all-silicon photoelectric biosensor (ASPB) demonstrates its potential in the application of handheld biosensors. Full article
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