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Nanomaterials
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Study of Structure Regulation and Physical Properties of Nano-Optoelectronic Materials
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Study of Structure Regulation and Physical Properties of Nano-Optoelectronic Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (31 July 2023) | Viewed by 1608

Special Issue Editors

Prof. Dr. Zhichuan Niu

E-Mail Website
Guest Editor
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Interests: epitaxial nanostructures; self-assmbled quantum dots; quantum wells; semiconductor laser; quantum light source; photodetector
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Zhongming Wei

E-Mail Website
Guest Editor
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Interests: preparation of low-dimensional semiconductor materials and optoelectronic functional devices; self-assembly of small organic molecules and molecular electronics devices; organic semiconductor materials and photoelectric devices

Special Issue Information

Dear Colleagues,

Nano-optoelectronic materials such as epitaxial 3D semiconductor quantum dots, 2D quantum wells/superlattices, and 2D monolayers are desired for information photonics (e.g., laser diode, photodetector, saturated absorber, micro-cavity or photonic integrated circuit) and quantum photonics (e.g., single or entangled photon emitter). To achieve suitable performances from these devices (e.g., high-speed lasers with low threshold, high working temperature and monolithic wavelength, photodetectors in high detectivity, definite biexciton–exciton photon-pair emission with small fine structure splitting, or efficient nonlinear optics on chip and fiber integrated instead of bulk material), a structure regulation of these nanomaterials is needed, e.g., adding modulated doping or tunneling barrier surrounding, controlling the nanomaterial size and orientation, using a strain-reducing layer or coupled layer for longer wavelength, using biaxial strain tuning to form light hole, controlling the flux sequence to form a sharp interface, or designing proper micro-resonator modes for nonlinear optics or integrated photonics. The structure optimization and its consequent improvement of device performance can be directly reflected in the characteristics (e.g., photoluminescence (PL) or micro-PL spectroscopy, photoresponse spectroscopy) of the material optical properties, such as transient optics, detectivity, or single exciton property in such structures.

The present Special Issue of Nanomaterials aims to present the current state of the art in the use of structure regulation and physical property characteristics of these nano-optoelectronic materials for optoelectronic devices. In this issue, we invite contributions from leading groups in the field with the aim of giving a balanced view of the current state of the art in this discipline.

Prof. Dr. Zhichuan Niu
Prof. Dr. Zhongming Wei
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nano-optoelectronic materials
  • strain tuning
  • modulated doping
  • light hole
  • tunneling
  • interface
  • exciton
  • detectivity

Published Papers (2 papers)

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Research

11 pages, 3834 KiB  
Article
Shortwave Infrared InGaAs Detectors On-Chip Integrated with Subwavelength Polarization Gratings
by Huijuan Huang, Yizhen Yu, Xue Li, Duo Sun, Guixue Zhang, Tao Li, Xiumei Shao and Bo Yang
Nanomaterials 2023, 13(18), 2512; https://doi.org/10.3390/nano13182512 - 07 Sep 2023
Cited by 2 | Viewed by 1008
Abstract
Shortwave infrared polarization imaging can increase the contrast of the target to the background to improve the detection system’s recognition ability. The division of focal plane polarization indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice due to the [...] Read more.
Shortwave infrared polarization imaging can increase the contrast of the target to the background to improve the detection system’s recognition ability. The division of focal plane polarization indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice due to the advantages of compact structure, real-time imaging, and high stability. However, because of the mismatch between nanostructures and photosensitive pixels as well as the crosstalk among the different polarization directions, the currently reported extinction ratio (ER) of superpixel-polarization-integrated detectors cannot meet the needs of high-quality imaging. In this paper, a 1024 × 4 InGaAs FPA detector on-chip integrated with a linear polarization grating (LPG) was realized and tested. The detector displayed good performance throughout the 0.9–1.7 um band, and the ERs at 1064 nm, 1310 nm and 1550 nm reached up to 22:1, 29:1 and 46:1, respectively. For the crosstalk investigation, the optical simulation of the grating-integrated InGaAs pixel was carried out, and the limitation of the ER was calculated. The result showed that the scattering of incident light in the InP substrate led to the crosstalk. Moreover, the deviation of the actual grating morphology from the designed structure caused a further reduction in the ER. Full article
(This article belongs to the Special Issue Study of Structure Regulation and Physical Properties of Nano-Optoelectronic Materials)
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11 pages, 3593 KiB  
Article
All-Silicon Photoelectric Biosensor on Chip Based on Silicon Nitride Waveguide with Low Loss
by Yu Tang, Qian Luo, Yuxing Chen and Kaikai Xu
Nanomaterials 2023, 13(5), 914; https://doi.org/10.3390/nano13050914 - 01 Mar 2023
Cited by 27 | Viewed by 1709
Abstract
Compared to the widely used compound semiconductor photoelectric sensors, all-silicon photoelectric sensors have the advantage of easy mass production because they are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. In this paper, we propose an all-silicon photoelectric biosensor with a simple process [...] Read more.
Compared to the widely used compound semiconductor photoelectric sensors, all-silicon photoelectric sensors have the advantage of easy mass production because they are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. In this paper, we propose an all-silicon photoelectric biosensor with a simple process and that is integrated, miniature, and with low loss. This biosensor is based on monolithic integration technology, and its light source is a PN junction cascaded polysilicon nanostructure. The detection device utilizes a simple refractive index sensing method. According to our simulation, when the refractive index of the detected material is more than 1.52, evanescent wave intensity decreases with the growth of the refractive index. Thus, refractive index sensing can be achieved. Moreover, it was also shown that, compared to a slab waveguide, the embedded waveguide designed in this paper has a lower loss. With these features, our all-silicon photoelectric biosensor (ASPB) demonstrates its potential in the application of handheld biosensors. Full article
(This article belongs to the Special Issue Study of Structure Regulation and Physical Properties of Nano-Optoelectronic Materials)
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