Two-Dimensional (2D) Materials for Micro/Nano Electronics and Optoelectronic Devices

Dear Colleagues,

During the last decade, atomically thin two-dimensional (2D) materials including semimetal graphene (bandgap: 0 eV), insulating hexagonal boron nitride (hBN) (bandgap: 4.9 eV), and semiconducting transition metal dichalcogenides (TMDs) (bandgap: 1.0―2.1 eV) have attracted more and more attention in both academia and industry due to their novel physical and chemical properties. In addition, the creation of vertical and horizontal 2D heterostructures by a combination of different 2DLMs has opened up a new paradigm for the artificial fabrication of nanomaterials with outstanding device performance. In the last few years, remarkable efforts have been made towards the growth of 2D materials and 2D novel micro/nano devices.

The aim of this Special Issue is to offer the latest cutting-edge research and development of two-dimensional materials science and technology. This issue seeks to publish recent advances in the growth of high-quality 2D materials, heterostructures and janus, advanced 2D electronic and optoelectronic device fabrication, surface and interface engineering, novel physics and materials science at the 2D limit such as twistronics and polaritons in 2D materials, and the state of the art of recent research on the synapse and neuron networks on 2D devices. Both experimental and theoretical articles will be published in this Special Issue.

Dr. Kun Chen
Dr. Xi Wan
Guest Editors

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