Ferroelectric Physics for Next Generation Electronics
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (10 June 2023) | Viewed by 226
Special Issue Editor
Special Issue Information
Dear Colleagues,
Since the discovery of ferroelectricity nearly a century ago, enormous progress has been made in the science and technology of ferroelectric materials, leading to wide range of applications. Ferroelectric materials exhibit an electric field-induced switching of spontaneous polarization, and it is the stable retention upon withdrawal of the electric field which found extensive implementations in various fields ranging from energy storage and harvesting, capacitors, piezo-electric devices such as medical ultrasound equipment, civilian and military underwater sonars, magnetic disk memory read heads, pyroelectric infrared sensors for fire hazard sensing and environmental monitoring, and non-volatile ferroelectric memory elements to more recent approaches such as integrated sensing and memory components for extreme edge IOT devices and neuromorphic computing.
One key challenge relating to ferroelectric materials is their demanding process parameters, often unsuitable for integration with foundry-made semiconducting devices, which restrict the ability of ferroelectric components to merge with traditional semiconductor industry. However, in recent years, the discovery of ferroelectricity in doped HfO2-based materials sparked enormous interest in the semiconductor industry and both front-end-of-line integration and back-end-of-line integration of ferroelectric components with complementary metal oxide semiconductor (CMOS) circuits have been demonstrated. For flexible and wearable IOT devices, the measurement of human body vital parameters such as artery pulse pressure, body temperature, and human sleep patterns is essential, and ferro- and piezoelectric sensors capable of monitoring and adaptively learning are becoming key players in this field. Additionally, triboelectricity in these materials is being actively harnessed for building future self-powered smart systems.
The objective of this Special Issue is to highlight cutting-edge approaches and recent progress in the growing field of ferroelectric materials and device physics, the application of ferroelectric materials in energy generation, energy storage, sensing, memory and all other related fields, and integration strategies of these materials with other components for system-on-chip applications. We intend to encourage submissions covering various topics related to ferroelectric devices and would like to invite pioneering works in this field.
Prof. Dr. Sayani Majumdar
Guest Editor
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Keywords
- ferroelectricity
- thin-film ferroelectric devices
- ferroelectric memories
- piezoelectric and pyroelectric sensors
- energy harvesting
- energy conversion
- flexible ferroelectric sensors and memory
- edge computing
- neuromorphic computing and engineering
- logic-in-memory
- non-volatile logic
- low-power electronics
- steep-slope transistors
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