Crystal Structure and Crystal Growth of Semiconductor Materials
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Chemistry".
Deadline for manuscript submissions: closed (20 January 2024) | Viewed by 123
Special Issue Editor
Interests: crystal growth; polymorphism; phase transition; organic/inorganic semiconductors; defects; scanning Kelvin probe microscopy
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Crystal, the most stable and perfect state, can reveal the intrinsic properties of material and also constitutes the basic component of semiconducting devices. Therefore, crystal growth and structure design have been attracting a great deal of research interest. However, achieving the production of high-quality crystal is not a simple matter. Although great efforts have been made, some fundamentals underlying crystal growth processes are still unclear, including nucleation, growth kinetics, segregation behavior, interface stability, heat, mass transport, etc. The understanding of these processes that determine crystal quality and packing structural is therefore of paramount importance for the exploration of structure–property relationships and electrical transport behavior in semiconductor materials. Additionally, with more crystal growth methods and technologies, some aspects of theoretical characterization and prediction of crystal structures are encouraged to explore.
This Special Issue covers these topics and focuses on structural design, crystal nucleation and growth, defects, and structure–property relationships as well as applications of crystalline semiconductors (bulk, thin film and nanostructure).
Prof. Dr. Tao He
Guest Editor
Manuscript Submission Information
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Keywords
- crystal growth
- structural defects
- semiconductor materials
- charge transport
- devices
