Advanced Microwave and Millimeter-Wave Integrated Circuits and Passive Components for Next-Generation Wireless Systems
A special issue of Journal of Low Power Electronics and Applications (ISSN 2079-9268).
Deadline for manuscript submissions: 31 January 2027 | Viewed by 102
Editors
Interests: CMOS RFICs; GaN/GaAs/HBT front-end ICs
Interests: antenna design; OTA measurement (SISO/MIMO/5G NR mmWave OTA)
Interests: wireless communications system (UAV, AIoT, NTN)
Special Issue Information
Dear Colleagues,
The rapid evolution of wireless communication, sensing, radar, satellite, and emerging AI-enabled connectivity systems has significantly increased the demand for high-performance microwave and millimeter-wave technologies. This Special Issue aims to provide a comprehensive platform for the dissemination of recent advances in integrated circuit and passive component design across a broad range of semiconductor technologies, including CMOS, SiGe HBT/BiCMOS, GaAs, and GaN. The collection will bring together researchers and industry practitioners working on state-of-the-art circuit architectures, device technologies, design methodologies, and system-level implementations that address the challenges of next-generation RF and millimeter-wave applications.
The focus of this topical collection is the design, analysis, modeling, and implementation of microwave and millimeter-wave circuits and subsystems. Contributions are encouraged in active circuit design, including power amplifiers (PAs), low-noise amplifiers (LNAs), switches, mixers, oscillators, and highly integrated RF systems. Particular interest is placed on innovations that improve efficiency, linearity, bandwidth, noise performance, and power handling capability. Topics include filters, power dividers/combiners, couplers, integrated passive devices, and packaging technologies that enable high-performance and compact implementations. Research addressing advanced modeling, electromagnetic simulation, design automation, reliability, thermal management, and heterogeneous integration is also highly welcome.
The purpose of this Special Issue is to provide an interdisciplinary forum that bridges device technologies, circuit design, passive component development, and system integration. By bringing together contributions from CMOS, GaAs, GaN, and SiGe HBT communities, the collection seeks to promote cross-fertilization of ideas and accelerate technological innovations for applications spanning 5G/6G communications, satellite systems, radar, automotive sensing, wireless power transfer, and emerging high-frequency platforms. The proposed collection will therefore provide readers with a broader perspective on emerging design trends, comparative technological advantages, and future research directions, serving as a valuable reference for both academic researchers and practicing engineers working in advanced RF and millimeter-wave electronics.
Prof. Dr. Sen Wang
Dr. Chao-Hsiang Liao
Dr. Jie-Ying Zhong
Guest Editors
Manuscript Submission Information
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Keywords
- microwave and millimeter-wave integrated circuits
- CMOS and compound semiconductors
- RF front-end design
- passive circuits
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